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At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlO{sub x}/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

We investigate spin injection into Si channels using three-terminal spin-accumulation (3T-SA) devices with high-quality CoFe/MgO/n-Si and CoFe/AlO{sub x}/n-Si tunnel spin-injectors whose tunnel barriers are formed by radical oxidation of Mg and Al thin films deposited on Si(100) substrates and successive annealing under radical-oxygen exposure. When the MgO and AlO{sub x} barriers are not treated by the radical-oxygen annealing, the Hanle-effect signals obtained from the 3T-SA devices are closely fitted by a single Lorentz function representing a signal due to trap spins. On the other hand, when the tunnel barriers are annealed under radical-oxygen exposure, the Hanle-effect signals can be accurately fitted by the superposition of a Lorentz function and a non-Lorentz function representing a signal due to accumulated spins in the Si channel. These results suggest that the quality improvement of tunnel barriers treated by radical-oxygen annealing is highly effective for spin-injection into Si channels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Ferroelectricity emerging in strained (111)-textured ZrO{sub 2} thin films

(Anti-)ferroelectricity in complementary metal-oxide-semiconductor (CMOS)-compatible binary oxides have attracted considerable research interest recently. Here, we show that by using substrate-induced strain, the orthorhombic phase and the desired ferroelectricity could be achieved in ZrO{sub 2} thin films. Our theoretical analyses suggest that the strain imposed on the ZrO{sub 2} (111) film by the TiN/MgO (001) substrate would energetically favor the tetragonal (t) and orthorhombic (o) phases over the monoclinic (m) phase of ZrO{sub 2}, and the compressive strain along certain 〈11-2〉 directions may further stabilize the o-phase. Experimentally ZrO{sub 2} thin films are sputtered onto the MgO (001) substrates buffered by epitaxial TiN layers. ZrO{sub 2} thin films exhibit t- and o-phases, which are highly (111)-textured and strained, as evidenced by X-ray diffraction and transmission electron microscopy. Both polarization-electric field (P-E) loops and corresponding current responses to voltage stimulations measured with appropriate applied fields reveal the ferroelectric sub-loop behavior of the ZrO{sub 2} films at certain thicknesses, confirming that the ferroelectric o-phase has been developed in the strained (111)-textured ZrO{sub 2} films. However, further increasing the applied field leads to the disappearance of ferroelectric hysteresis, the possible reasons of which are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

On the local electronic and atomic structure of Ce 1-x Pr x O 2-δ epitaxial films on Si

The local electronic and atomic structure of (111)-oriented, single crystalline mixed Ce 1-x Pr x O 2-δ (x = 0, 0.1 and 0.6) epitaxial thin films on silicon substrates have been investigated in view of engineering redox properties of complex oxide films. Non-destructive X-ray absorption near edge structure reveals that Pr shows only +3 valence and Ce shows only nominal +4 valence in mixed oxides. Extended x-ray absorption fine structure (EXAFS) studies were performed at K edges of Ce and Pr using a specially designed monochromator system for high energy measurements. They demonstrate that the fluorite lattice of ceria (CeO₂) is almost not perturbed for x = 0.1 sample, while higher Pr concentration (x = 0.6) not only generates a higher disorder level (thus more disordered oxygen) but also causes a significant reduction of Ce–O interatomic distances. The valence states of the cations were also examined by techniques operating in highly reducing environments: scanning transmission electron microscopy-electron energy loss spectroscopy and X-ray photoemission spectroscopy; in these reducing environments, evidence for the presence of Ce³⁺ was clearly found for the higher Pr concentration. Thus, the introduction of Pr³⁺ into CeO₂ strongly enhances the oxygen exchange properties of CeO₂. This improved oxygen mobility properties of CeO₂ are attributed to the lattice disorder induced by Pr mixing in the CeO₂ fluorite lattice, as demonstrated by EXAFS measurements. Thus, a comprehensive picture of the modifications of the atomic and electronic structure of Ce 1-x Pr x O 2-δ epitaxial films and their relation is obtained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Engineering the switching dynamics of TiO{sub x}-based RRAM with Al doping

Titanium oxide (TiO{sub x}) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiO{sub x} thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films

Highly adhesive tin-monoselenide (SnSe) layers (200 ± 10) nm thick are grown by hydrochemical deposition from a trilonate reactive mixture. X-ray diffraction shows that the synthesized films crystallize in the orthorhombic system (space group Pnma). The significant oxygen content in the film surface layers is explained by the partial oxidation of samples with SnO{sub 2} phase formation. The results of ion etching to a depth of 18 nm show a sharp decrease in the oxygen content over thickness and real correspondence to the SnSe elemental composition. The band gap determined by optical studies for direct transitions is 1.69 eV. The synthesized SnSe layers exhibit p-type conductivity, which is characteristic of this material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Visualization of Mesoscopic Conductivity Fluctuations in Amorphous Semiconductor Thin-Film Transistors

Charge transport in amorphous semiconductors is considerably more complicated than the process in crystalline materials due to abundant localized states. In addition to device-scale characterization, spatially resolved measurements are important to unveiling electronic properties. Here, we report gigahertz conductivity mapping in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors by microwave impedance microscopy (MIM), which probes conductivity without Schottky barrier’s influence. The difference between the dc and microwave conductivities reflects the efficacy of the injection barrier in an accumulation-mode transistor. The conductivity exhibits significant nanoscale inhomogeneity in the subthreshold regime, presumably due to trapping and release from localized states. The characteristic length scale of local fluctuations, as determined by the autocorrelation analysis, is about 200 nm. Using a random-barrier model, we can simulate the spatial variation of the potential landscape, which underlies the mesoscopic conductivity distribution. Furthermore, our work provides an intuitive way to understand the charge transport mechanism in amorphous semiconductors at the microscopic level.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ordered porous RGO/SnO 2 thin films for ultrasensitive humidity detection

In this work, ordered porous thin films of reduced graphene oxide and tin oxide (rGO/SnO 2 ) were synthesized by a polystyrene sphere monolayer colloidal crystal template method, and their gas-sensing properties were systematically studied. The formed amorphous SnO 2 and partially reduced graphene oxide were analyzed using several complementary material characterization techniques. Further, the results show that the incorporation of rGO significantly improved the humidity sensitivity and the electrical conductivity of the sensor relative to the pristine SnO 2 thin film. Fast response time and excellent selectivity towards humidity were also achieved for the rGO/SnO 2 composite film. The long-term stability of the rGO/SnO 2 sensor was confirmed by comparing its performance to a commercial humidity sensor. The enhanced sensor performance is attributed to the synergistic effects of the incorporation of rGO and the ordered porous structure of the composite film.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Transport properties of β-Ga{sub 2}O{sub 3} nanoparticles embedded in Nb thin films

The origin of ferromagnetism in nanoparticles of nonmagnetic oxides is an interesting area of research. In the present work, transport properties of niobium thin films, with β-Ga{sub 2}O{sub 3} nanoparticles embedded within them, are presented. Nanoparticles of β-Ga{sub 2}O{sub 3} embedded in a Nb matrix were prepared at room temperature by radio frequency co-sputtering technique on Si (100) and glass substrates held at room temperature. The thin films deposited on Si substrates were subjected to Ar annealing at a temperature range of 600-650 C for 1 hour. Films were characterized by X-ray diffraction (XRD), Micro-Raman and elemental identification was performed with an Energy Dispersive X-ray Spectroscopy (EDS). Transport measurements were performed down to liquid helium temperatures by four-probe contact technique, showed characteristics analogous to those observed in the context of a Kondo system. A comparison of the experimental data with the theoretical formalism of Kondo and Hamann is presented. It is suggested that this behavior arises from the existence of magnetic moments associated with the oxygen vacancy defects in the nanoparticles of the nonmagnetic oxide Ga{sub 2}O{sub 3}.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Irradiation Driven Restructuring of Nanocrystalline ThO 2 and Th 1–x U x O 2 Thin Films

Irradiation induced structural changes of actinide oxide materials is a key consideration in their development and use as nuclear fuels. This study reported on the synthesis of ThO 2 and Th 1–x U x O 2 (x = 0.15, 0.50) thin films, fabricated using electrospray-assisted solution combustion synthesis, and their responses to ion irradiation. Krypton ion irradiations, up to a fluence of 1 × 10 16 ions/cm 2 , were carried out to simulate radiation damage induced by fission products in a reactor environment. Structural and chemical changes induced by irradiation were analyzed using high-resolution scanning transmission electron microscopy (STEM), energy-dispersive X-ray spectroscopy (EDS), and electron energy-loss spectroscopy (EELS). It was determined that the extent and nature of irradiation-induced damage are strongly correlated with the uranium content. ThO 2 films were most susceptible to radiation-induced damage, with significant cavity formation and delamination from the substrate at high fluence. Of the compositions studied, Th 0.85 U 0.15 O 2 films showed the highest stability, characterized by moderate grain growth and the absence of voids or severe defect structures. In contrast, Th 0.5 U 0.5 O 2 films accumulated extensive damage, including the formation of a nanocrystalline central region. EELS analysis indicated that oxygen displacement is the primary driver of structural degradation in Th 0.5 U 0.5 O 2 films. α-particle spectroscopy confirmed minimal actinide loss across all compositions, underscoring the mechanical robustness of the films. These findings provide insight into the irradiation-induced damage mechanisms in Th O2 and Th 1–x U x O 2 systems, supporting their development as potential materials for nuclear fuels and irradiation-tolerant thin film targets in nuclear physics measurements.

Th1−xUxO2↗
DOE OSTI2014

Study of optical properties of Erbium doped Tellurite glass-polymer composite

Chalcogenide glasses have wide applications in optical device technology. But it has some disadvantages like thermal instability. Among them Tellurite glasses exhibits high thermal Stability. Doping of rare earth elements into the Tellurite glasses improve its optical properties. To improve its mechanical properties composites of this Tellurite glasses with polymer are prepared. Bulk samples of Er{sub 2}O{sub 3} doped TeO{sub 2}‐WO{sub 3}‐La{sub 2}O{sub 3} Tellurite glasses are prepared from high purity oxide mixtures, melting in an alumina crucible in air atmosphere. Composites of this Tellurite glasses with polymer are prepared by powder mixing method and the thin films of these composites are prepared using polymer press. Variations in band gap of these composites are studied from the UV/Vis/NIR absorption.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Epitaxial growth and thermodynamic stability of SrIrO{sub 3}/SrTiO{sub 3} heterostructures

Obtaining high-quality thin films of 5d transition metal oxides is essential to explore the exotic semimetallic and topological phases predicted to arise from the combination of strong electron correlations and spin-orbit coupling. Here, we show that the transport properties of SrIrO{sub 3} thin films, grown by pulsed laser deposition, can be optimized by considering the effect of laser-induced modification of the SrIrO{sub 3} target surface. We further demonstrate that bare SrIrO{sub 3} thin films are subject to degradation in air and are highly sensitive to lithographic processing. A crystalline SrTiO{sub 3} cap layer deposited in-situ is effective in preserving the film quality, allowing us to measure metallic transport behavior in films with thicknesses down to 4 unit cells. In addition, the SrTiO{sub 3} encapsulation enables the fabrication of devices such as Hall bars without altering the film properties, allowing precise (magneto)transport measurements on micro- and nanoscale devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

In this letter, we present structural, compositional, and electrical characteristics of anodic oxide layer-based metal-oxide-semiconductor (MOS) capacitors on n-type InAs(111)A, along with the effect of a thin fluorinated interfacial passivation layer. Electrochemical oxidation in acid electrolyte with addition of fluorine (NH{sub 4}F) led to the formation of oxygen free well-ordered wide gap fluorinated interfacial layer at InAs(111)A with the fixed charge (Q{sub fix}) and density of interface states (D{sub it}) in the range of (4–6) × 10{sup 10 }cm{sup −2} and (2–12) × 10{sup 10 }eV{sup −1 }cm{sup −2}, respectively. We found that MOS capacitors showed excellent capacitance-voltage characteristics with very small frequency dispersion (<1% and <15 mV). Fluorinated interfacial layer consists of crystalline isostructural compound with the InAs substrate, which remains intact with the atomic smoothness and sharpness that explain unpinned behavior of the Fermi level.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Studies on Nd{sub x}In{sub 1−x}O{sub 3} semiconducting thin films prepared by rf magnetron sputtering

Neodymium-substituted indium oxide (Nd{sub x}In{sub 1−x}O{sub 3}, NIO) semiconducting thin films fabricated by rf sputtering were investigated. It was found that the incorporation of Nd atoms would lead to broadening the optical band gap, suppressing the grain growth, and reducing the free carrier concentration. The field-effect transistors with different NIO (5%, 15%, and 25% Nd concentration of the targets) channel layers exhibited similar electrical stability under positive gate-bias-stress, but the ones with 15% and 25% Nd concentration displayed much better stability under negative gate-bias-stress. Detailed studies showed that the content of |Nd3d{sub 5/2}{sup 5}4f{sup 4}O2p{sup −1}> electron configuration decreased as the Nd concentration increased, resulting in the reduction of holes during negative-bias-stress. And the reduction of the |Nd3d{sub 5/2}{sup 5}4f{sup 4}O2p{sup −1}> content as the Nd concentration increased was ascribed to less overlap between the metal and ligand orbitals arose from large lattice expansion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Barium Bismuth Niobate Double Perovskite/Tungsten Oxide Nanosheet Photoanode for High‐Performance Photoelectrochemical Water Splitting

Abstract Recently, a new method to effectively engineer the bandgap of barium bismuth niobate (BBNO) double perovskite was reported. However, the planar electrodes based on BBNO thin films show low photocurrent densities for water oxidation owing to their poor electrical conductivity. Here, it is reported that the photoelectrochemical (PEC) activity of BBNO‐based electrodes can be dramatically enhanced by coating thin BBNO layers on tungsten oxide (WO 3 ) nanosheets to solve the poor conductivity issue while maintaining strong light absorption. The PEC activity of BBNO/WO 3 nanosheet photoanodes can be further enhanced by applying Co 0.8 Mn 0.2 O x nanoparticles as a co‐catalyst. A photocurrent density of 6.02 mA cm −2 at 1.23 V (vs reversible hydrogen electrode (RHE)) is obtained using three optically stacked, but electrically parallel, BBNO/WO 3 nanosheet photoanodes. The BBNO/WO 3 nanosheet photoanodes also exhibit excellent stability in a high‐pH alkaline solution; the photoanodes demonstrate negligible photocurrent density decay while under continuous PEC operation for more than 7 h. This work suggests a viable approach to improve the PEC performance of BBNO absorber‐based devices.

Weng, Baicheng↗
DOE OSTI2026

Fabrication, oxidation, and combustion of nanoscale magnesium diboride and tetraboride

The difficult ignition and low combustion efficiency of boron particles decrease the performance of boron-loaded, fuel-rich propellants for solid fuel ramjets and ducted rockets. One approach to solving this problem involves the use of magnesium diboride (MgB 2 ), which ignites easier than boron. Magnesium tetraboride (MgB 4 ) offers greater energy density owing to its higher boron content. However, the effect of B/Mg ratio on the ignition and combustion is unknown. Additionally, while nanoscale MgB₂ particles and quasi-2D structures are promising energetic additives, the oxidation and combustion properties of nanoscale MgB₄ have not been explored. To address these knowledge gaps, the present work included synthesis and high-energy ball milling of MgB 2 and MgB 4 powders, thermogravimetric analysis (TGA) of their oxidation, and combustion experiments with thin layers of the obtained powders. Comparison of two synthesis routes (a solid-state reaction in a tube furnace and combustion synthesis) has shown that the former is the superior method for producing magnesium borides. TGA has revealed that oxidation of both MgB 2 and MgB 4 results in a high conversion into the oxides (88–91 %), far exceeding the low conversion of boron (62.5 %). MgB 4 begins to oxidize rapidly at a much lower temperature (∼900 °C) than MgB 2 (∼1200 °C). The burning rates of milled MgB 2 and MgB 4 are about eight and five times, respectively, faster than that of submicron boron. Magnesium borides exhibit a stable, sustained boron flame, needed for high combustion efficiency, whereas physical Mg/B mixtures undergo Mg-driven "flash" combustion.

Boron↗
DOE OSTI2016

Interfacial Modifiers for Enhanced Stability and Reduced Degradation of Cu(In,Ga)Se2 Devices

Transparent conductive oxide (TCO) degradation is a known failure mode in thin-film photovoltaic (PV) devices through mechanisms such as resistivity increase and delamination. Here we apply thin interfacial modifiers to aluminum-doped zinc oxide (AZO) to mitigate damp heat induced degradation of electrical performance. Additionally, we demonstrate that these modifiers can be applied to the AZO front contact of a Cu(In, Ga)Se2 device without significantly degrading the device performance, a promising step towards improving the lifetime performance.

14 SOLAR ENERGY↗