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At least 1,405 records · Page 78

Millisecond lifetimes and coherence times in 2D transmon qubits

Materials improvement is a powerful approach to reducing loss and decoherence in superconducting qubits, because such improvements can be readily translated to large-scale processors. Recent work improved transmon coherence by using tantalum as a base layer and sapphire as a substrate. The losses in these devices are dominated by two-level systems with comparable contributions from both the surface and bulk dielectrics, indicating that both must be tackled to achieve substantial improvements in the state of the art. Here we show that replacing the substrate with high-resistivity silicon markedly decreases the bulk substrate loss, enabling 2D transmons with time-averaged quality factors (Q avg ) of 9.7 × 10 6 across 45 qubits. For our best qubit, we achieve a Q avg of 1.5 × 10 7 , reaching a maximum Q of 2.5 × 10 7 , corresponding to a lifetime (T 1 ) up to 1.68 ms. This low loss also allows us to observe decoherence effects related to the Josephson junction, and we use an improved, low-contamination junction deposition to achieve Hahn echo coherence times (T 2E ) exceeding T 1 . We achieve these materials improvements without any modifications to the qubit architecture, allowing us to readily incorporate standard quantum control gates. Here, we demonstrate single-qubit gates with 99.994% fidelity. The tantalum-on-silicon platform comprises a simple material stack that can potentially be fabricated at the wafer scale and therefore can be readily translated to large-scale quantum processors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Oxygen vacancy and hole conduction in amorphous TiO 2

The amorphous titanium dioxide (a-TiO2) has drawn attention recently due to the finding that it holds promise for coating conventional photoelectrodes for corrosion protection while still allowing the holes to transport to the surface. The mechanism of hole conductivity at a level much higher than the edge of the valence band is still a mystery. In this work, an amorphous TiO2 model is obtained from molecular dynamics employing the “melt-and-quench” technique. The electronic properties, polaronic states and the hole conduction mechanism in amorphous structure were investigated by means of density functional theory with Hubbard's energy correction (DFT + U) and compared to those in crystalline (rutile) TiO2. The formation energy of the oxygen vacancy was found to reduce significantly (by a few eV) upon amorphization. Our theoretical study suggested that the oxygen vacancies and their defect states provide hopping channels, which are comparable to experimental observations and could be responsible for hole conduction in the “leaky” TiO2 recently discovered for the photochemical water-splitting applications.

Marcus theory↗

Effects of non-local exchange on core level shifts for gas-phase and adsorbed molecules

Density functional theory calculations are often used to interpret experimental shifts in core level binding energies. Calculations based on gradient-corrected (GC) exchange-correlation functionals are known to reproduce measured core level shifts (CLS) of isolated molecules and metal surfaces with reasonable accuracy. In the present study, we discuss a series of examples where the shifts calculated within a GC-functional significantly deviate from the experimental values, namely the CLS of C 1s in ethyl trifluoroacetate, Pd 3d in PdO and the O 1s shift for CO adsorbed on PdO(101). The deviations are traced to effects of the electronic self-interaction error with GC-functionals and substantially better agreements between calculated and measured CLS are obtained when a fraction of exact exchange is used in the exchange-correlation functional.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Direct comparative study on the energy level alignments in unoccupied/occupied states of organic semiconductor/electrode interface by constructing in-situ photoemission spectroscopy and Ar gas cluster ion beam sputtering integrated analysis system

Through the installation of electron gun and photon detector, an in-situ photoemission and damage-free sputtering integrated analysis system is completely constructed. Therefore, this system enables to accurately characterize the energy level alignments including unoccupied/occupied molecular orbital (LUMO/HOMO) levels at interface region of organic semiconductor/electrode according to depth position. Based on Ultraviolet Photoemission Spectroscopy (UPS), Inverse Photoemission Spectroscopy (IPES), and reflective electron energy loss spectroscopy, the occupied/unoccupied state of in-situ deposited Tris[4-(carbazol-9-yl)phenyl]amine (TCTA) organic semiconductors on Au (E{sub LUMO}: 2.51 eV and E{sub HOMO}: 1.35 eV) and Ti (E{sub LUMO}: 2.19 eV and E{sub HOMO}: 1.69 eV) electrodes are investigated, and the variation of energy level alignments according to work function of electrode (Au: 4.81 eV and Ti: 4.19 eV) is clearly verified. Subsequently, under the same analysis condition, the unoccupied/occupied states at bulk region of TCTA/Au structures are characterized using different Ar gas cluster ion beam (Ar GCIB) and Ar ion sputtering processes, respectively. While the Ar ion sputtering process critically distorts both occupied and unoccupied states in UPS/IPES spectra, the Ar GCIB sputtering process does not give rise to damage on them. Therefore, we clearly confirm that the in-situ photoemission spectroscopy in combination with Ar GCIB sputtering allows of investigating accurate energy level alignments at bulk/interface region as well as surface region of organic semiconductor/electrode structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Experimental and ab initio studies of the reactive processes in gas phase i-C{sub 3}H{sub 7}Br and i-C{sub 3}H{sub 7}OH collisions with potassium ions

Collisions between potassium ions and neutral i-C{sub 3}H{sub 7}Br and i-C{sub 3}H{sub 7}OH, all in their electronic ground state, have been studied in the 0.10–10.00 eV center of mass (CM) collision energy range, using the radiofrequency-guided ion beam technique. In K{sup +} + i-C{sub 3}H{sub 7}Br collisions KHBr{sup +} formation was observed and quantified, while the analogous KH{sub 2}O{sup +} formation in K{sup +} + i-C{sub 3}H{sub 7}OH was hardly detected. Moreover, formation of the ion-molecule adducts and their decomposition leading to C{sub 3}H{sub 7}{sup +} and either KBr or KOH, respectively, have been observed. For all these processes, absolute cross-sections were measured as a function of the CM collision energy. Ab initio structure calculations at the MP2 level have given information about the potential energy surfaces (PESs) involved. In these, different stationary points have been characterized using the reaction coordinate method, their connectivity being ensured by using the intrinsic-reaction-coordinate method. From the measured excitation function for KHBr{sup +} formation the corresponding thermal rate constant at 303 K has been calculated. The topology of the calculated PESs allows an interpretation of the main features of the reaction dynamics of both systems, and in particular evidence the important role played by the potential energy wells in controlling the reactivity for the different reaction channels.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process

Since epitaxial silicene is not chemically inert under ambient conditions, its application in devices and the ex-situ characterization outside of ultrahigh vacuum environments require the use of an insulating capping layer. Here, we report on a study of the feasibility of encapsulating epitaxial silicene on ZrB{sub 2}(0001) thin films grown on Si(111) substrates by aluminum nitride (AlN) deposited using trimethylaluminum (TMA) and ammonia (NH{sub 3}) precursors. By in-situ high-resolution core-level photoelectron spectroscopy, the chemical modifications of the surface due to subsequent exposure to TMA and NH{sub 3} molecules, at temperatures of 300 °C and 400 °C, respectively, have been investigated. While an AlN-related layer can indeed be grown, silicene reacts strongly with both precursor molecules resulting in the formation of Si–C and Si–N bonds such that the use of these precursors does not allow for the protective AlN encapsulation that leaves the electronic properties of silicene intact.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Accurate ab initio vibrational energies of methyl chloride

Two new nine-dimensional potential energy surfaces (PESs) have been generated using high-level ab initio theory for the two main isotopologues of methyl chloride, CH{sub 3}{sup 35}Cl and CH{sub 3}{sup 37}Cl. The respective PESs, CBS-35{sup HL}, and CBS-37{sup HL}, are based on explicitly correlated coupled cluster calculations with extrapolation to the complete basis set (CBS) limit, and incorporate a range of higher-level (HL) additive energy corrections to account for core-valence electron correlation, higher-order coupled cluster terms, scalar relativistic effects, and diagonal Born-Oppenheimer corrections. Variational calculations of the vibrational energy levels were performed using the computer program TROVE, whose functionality has been extended to handle molecules of the form XY {sub 3}Z. Fully converged energies were obtained by means of a complete vibrational basis set extrapolation. The CBS-35{sup HL} and CBS-37{sup HL} PESs reproduce the fundamental term values with root-mean-square errors of 0.75 and 1.00 cm{sup −1}, respectively. An analysis of the combined effect of the HL corrections and CBS extrapolation on the vibrational wavenumbers indicates that both are needed to compute accurate theoretical results for methyl chloride. We believe that it would be extremely challenging to go beyond the accuracy currently achieved for CH{sub 3}Cl without empirical refinement of the respective PESs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Deformation mechanisms of bent Si nanowires governed by the sign and magnitude of strain

In this study, the deformation mechanisms of bent Si nanowires are investigated at the atomic scale with bending strain up to 12.8%. The sign and magnitude of the applied strain are found to govern their deformation mechanisms, in which the dislocation types (full or partial dislocations) can be affected by the sign (tensile or compressive) and magnitude of the applied strain. In the early stages of bending, plastic deformation is controlled by 60° full dislocations. As the bending increases, Lomer dislocations can be frequently observed. When the strain increases to a significant level, 90° partial dislocations induced from the tensile surfaces of the bent nanowires are observed. This study provides a deeper understanding of the effect of the sign and magnitude of the bending strain on the deformation mechanisms in bent Si nanowires.

36 MATERIALS SCIENCE↗

Restored Passivation after Complete Removal of Front Poly-Si Between the Grid in Poly-Si/SiO2 Front/Back Cells

This work explores the use of wet chemical etching to completely remove the front poly-Si layer between grid lines of a front/back poly-Si/SiO2 passivated contact device. The purpose of the work is to provide excellent passivation under the metal grid, but to also maximize Jsc by eliminating optical absorption in the front poly-Si. We show that after a high temperature anneal to distribute carriers in the poly-Si/SiO2/c-Si interface all of the poly-Si can be removed selectively with TMAH, using the SiO2 as an etch-stop layer. The etched surface can be repassivated back to its original level with the addition of a SiNx/Al2O3 stack grown on the preserved tunnelling oxide layer followed by a short forming gas anneal. Using symmetric 100 - 200 nm intrinsically doped poly-Si/SiO2 on textured n-type wafer templates we show absolute device efficiency enhancement from 15% to 21% by increasing the Jsc by 12 mA/cm2 after removing the front poly-Si and repassivating while effectively preserving the Voc, and FF of the device. IQE values are similar to PERC devices in the short wavelength range.

etching↗

Solvent structure and dynamics over Brønsted acid MWW zeolite nanosheets

In the liquid phase of heterogeneous catalysis, solvent plays an important role and governs the kinetics and thermodynamics of a reaction. Although it is often difficult to quantify the role of the solvent, it becomes particularly challenging when a zeolite is used as the catalyst. This difficulty arises from the complex nature of the liquid/zeolite interface and the different solvation environments around catalytically active sites. Here, we use ab initio molecular dynamics simulations to probe the local solvation structure and dynamics of methanol and water over MWW zeolite nanosheets with varying Brønsted acidity. We find that the zeolite framework and the number and location of the acid sites in the zeolite influence the structure and dynamics of the solvent. In particular, methanol is more likely to be in the vicinity of the aluminum (Al 3+ ) at the T4 site than at T1 due to easy accessibility. The methanol oxygen binds strongly to the Al at the T4 site, weakening the Al–O for the bridging acid site, which results in the formation of the silanol group, significantly reducing the acidity of the site. The behavior of methanol is in direct contrast to that of water, where protons can easily propagate from the zeolite to the solvent molecules regardless of the acid site location. Furthermore, our work provides molecular-level insights into how solvent interacts with zeolite surfaces, leading to an improved understanding of the catalytic site in the MWW zeolite nanosheet.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

UNDERSTANDING GIANT RADIO GALAXY J1420-0545: LARGE-SCALE MORPHOLOGY, ENVIRONMENT, AND ENERGETICS

In this paper, we consider the possibility that the structure of the largest radio galaxy J1420-0545 is formed by restarted rather than primary jet activity. This hypothesis is motivated by the unusual morphological properties of the source, suggesting almost ballistic propagation of powerful jets in a particularly low-density environment. New radio observations of J1420-0545 confirm its morphology, which consists of only two narrow lobes; no trace of any outer low-density cavity due to the previous jet activity is therefore detected. Different model fits performed using the newly accessed radio data imply a relatively young age of the source, exceptionally high expansion velocity, a large jet kinetic power, and confirm and particularly low-density environment. We find that it is possible to choose a realistic set of the model parameters for which the hypothetical outer lobes of J1420-0545 are old enough such that their expected radio surface brightness is substantially below the rms noise level of the available radio maps. On the other hand, the extremely low density of the gas surrounding the J1420-0545 lobes is consistent with the mean density of the baryonic matter in the universe. This suggests that the source may be instead located in a real void of the galaxy and matter distribution. In both cases, the giant radio lobes of J1420-0545 are expected to substantially modify the surrounding matter by driving strong shocks and heating the gas located at the outskirts of the filamentary galactic distribution. Finally, we also find that the energetic requirements for the source are severe in terms of the total jet power and the total energy deposited by the outflows far away from the central engine.

79 ASTRONOMY AND ASTROPHYSICS↗

Tuning of the rotational transform in Wendelstein 7-X

The control of rotational transform in Wendelstein 7-X (W7-X) is key to the island divertor operation and safety of plasma facing components. The island divertor concept in W7-X relies on an edge flux surface with rotational transform of $t$ = 1 resonating with an intrinsic n/m = 5/5 resonance to form a five lobed island chain. This island chain intersects with divertor plates to give rise to the island divertor. Changes in the relative position of the rational surface and the divertor plates can result in changes in divertor performance, thus the control of the rotational transform is essential to operation of the W7-X device. During the first divertor campaign electromagnetic loads resulted in elastic deformations of the shaped modular stellarator coils. Such deformations made these coils more planar, reducing the vacuum rotational transform, subsequently shifting the $t$ = 1 resonance outward. Unintended plasma wall interactions provided the first clear evidence of this effect during plasma operation. Flux surface measurements were utilized to estimate the correct level of current in the planar coils for correction of $t$, and found to be around ~-100 A . Scans of the planar coil current for iota correction were performed during plasma operation. These measurements suggest planar coil currents between -250 and ~ 0 A would place the strike lines at the designed distance from the pumping gaps. Divertor Langmuir and upstream probe measurements confirm these estimates along with measurements of divertor neutral gas pressure.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The impact of helium on plasma-driven hydrogen permeation and implications for direct internal recycling in the fusion fuel cycle

Abstract Metal foil pumps (MFPs) are the leading technology for direct internal recycling (DIR) of hydrogen isotopes from the plasma exhaust in future fusion plants. MFPs rely on the concept of superpermeation, where superthermal H atoms directly absorb into the metal foil, rapidly diffuse, and desorb downstream. To date, studies of superpermeation have predominantly employed either pure hydrogen or in some cases trace levels of impurities. The plasma exhaust is expected to contain just ∼1% helium, but in DIR the source gas would be enriched in helium as hydrogen isotopes are extracted. In this work, we explore the impact of helium on hydrogen superpermeation at low temperature (75 °C–200 °C) using Pd-based foils. To first order, the flux scaled linearly with the hydrogen mole fraction. Stable permeation was observed until the helium fraction reached ∼80%, where the flux began to decline slowly with time. In addition, short term (1–5 min) exposure to pure helium plasma significantly attenuated subsequent hydrogen plasma permeation, and the degree was more dramatic at elevated temperature. This attenuation was correlated with He retention in the foils, which was detected by time-of-flight secondary ion mass spectrometry at low levels (<0.1 at. %) and limited to the near surface (<10 nm). Similar trends were observed among all alloys (Pd, PdAg, PdCu), and the foils were restored to full performance with an Ar + sputter clean. The potential for helium plasma exposure to impact MFP performance under these conditions has not been previously reported, and these findings have significant implications to the design and implementation of practical DIR systems.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Microscopic Origin of Polarization Charges at Ga N / ( Al , Ga ) N Interfaces

Ga⁢N/(Al,Ga)⁢N heterojunctions are at the heart of high-electron-mobility transistors that are being adopted for high-power and high-frequency applications. The strong polarization fields present at this interface significantly enhance the density of the two-dimensional electron gas (2DEG) that is confined on the Ga⁢ N side of the junction. The microscopic origin of these electrons has been debated over the years: after excluding that they would be contributed by bulk donors, a model that identifies surface states on the (Al, Ga)⁢N surface as the source of electrons has become widely adopted. Recently, it has become clear, however, that the measured density of surface states is insufficient to account for the high electron density in the 2DEG. Here we demonstrate, based on state-of-the-art first-principles calculations, that the source of electrons is intrinsic to the overall structure and that the negative charge in the 2DEG is balanced by fixed charge on the surface. We perform a rigorous study of polarization, using our recently developed methodology for quantifying polarization fields within the finite-sized systems that can be addressed with density-functional calculations. The results show that the electrons that appear in the 2DEG originate locally at the interface, and that the net charge at the interface is predominantly compensated by fixed charge on the surface, rather than surface states. We elucidate the source of this fixed charge and associate it with surface reconstructions or the presence of heterovalent impurities (such as oxygen). Our results force a reassessment of the impact of surface states on the density of the 2DEG: rather than serving as a supply of electrons, the surface states mainly act to pin the Fermi level. Our conclusions allow a fresh interpretation of experimental observations and allow devising guidelines for optimizing carrier densities in the 2DEG.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Prediction of spin polarized Fermi arcs in quasiparticle interference in CeBi

We predict that CeBi in the ferromagnetic state is a Weyl semimetal. Our calculations within density functional theory show the existence of two pairs of Weyl nodes on the momentum path (0,0,k z ) at 15meV above and 100meV below the Fermi level. Two corresponding Fermi arcs are obtained on surfaces of mirror-symmetric (010)-oriented slabs at E=15meV and both arcs are interrupted into three segments due to hybridization with a set of trivial surface bands. By studying the spin texture of surface states, we find the two Fermi arcs are strongly spin polarized but in opposite directions, which can be detected by spin-polarized ARPES measurements. Here, our theoretical study of quasiparticle interference (QPI) for a nonmagnetic impurity at the Bi site also reveals several features related to the Fermi arcs. Specifically, we predict that the spin polarization of the Fermi arcs leads to a bifurcation-shaped feature only in the spin-dependent QPI spectrum, serving as a fingerprint of the Weyl nodes.

36 MATERIALS SCIENCE↗

Orbital-selective correlations and renormalized electronic structure in LiFeAs

Multiorbital physics is important to both the correlation physics and topological behavior of quantum materials. LiFeAs is a prototype iron pnictide suitable for in-depth investigation of this issue. Its electronic structure is strikingly different from the prediction of the noninteracting description. Here, a multiorbital Hubbard model is studied using a U(1) slave-spin theory. We demonstrate a mechanism for a substantial change to the Fermi surface, namely, orbital selectivity of the energy-level renormalization cooperating with its counterpart in quasiparticle spectral weight. Using this effect, we show how the dominating features of the electronic structure in LiFeAs are understood by the local correlations alone. In conclusion, our results set the stage to understand the origins and nature of both the unconventional superconductivity and likely electronic topology in this prototype iron pnictide and, more generally, reveal a remarkable degree of universality out of the seemingly complex multiorbital building blocks across a broad range of strongly correlated superconductors.

36 MATERIALS SCIENCE↗

Study of grain boundary transparency in(Yb$_{1-x}$Ca$_x$)Ba$_2$Cu$_3$O bicrystal thin films over a wide temperature, field, and field orientation range

The residual low angle grain boundary (GB) network is still the most important current-limiting mechanism operating in bi-axially textured rare earth barium copper oxide (REBCO) coated conductors. While Ca-doping is well established to improve super-current flow across low angle GBs in weak fields at high temperatures, Ca-doping also depresses T c , making it so far impractical for high temperature applications of REBCO coated conductors. On the other hand, high field magnet applications of REBCO require low temperatures. Here we systematically evaluate the effectiveness of Ca-doping in improving the GB transparency, r GB = J c GB /J c grain , of low angle Yb 1-x Ca x BaCuO [001] tilt bi-crystal films down to 10K and with magnetic fields perpendicular and parallel to the film surfaces, while varying the Ca and oxygen doping level. Using Low Temperature Scanning Laser Microscopy (LTSLM) and Magneto-Optical Imaging (MOI), we found r GB to strongly depend on the angle between magnetic field and the GB plane and clearly identified regimes in which J c GB can exceed J c grain (rGB>1) where the GB pinning is optimized by the field being parallel to the GB dislocations. However, even in this favorable situation, we found that r GB became much smaller at lower temperatures. Calculations of the GB Ca segregation profile predict that the high J c channels between the GB dislocation cores are almost Ca-free. It may be therefore that the positive effects of Ca doping seen by many authors near T c are partly a consequence of the higher Tc of these Ca-free channels.

Li, Pei↗

Mapping the N = 40 island of inversion: Precision mass measurements of neutron-rich Fe isotopes

Nuclear properties across the chart of nuclides are key to improving and validating our understanding of the strong interaction in nuclear physics. Here we present high-precision mass measurements of neutron-rich Fe isotopes performed at the TITAN facility. The multiple-reflection time-of-flight mass spectrometer (MR-ToF-MS), achieving a resolving power greater than 600000 for the first time, enabled the measurement of 63–70 Fe, including first-time high-precision direct measurements (δm/m ≈ 10 -7 ) of 68–70 Fe, as well as the discovery of a long-lived isomeric state in 69 Fe. These measurements are accompanied by both mean-field and ab initio calculations using the most recent realizations which enable theoretical assignment of the spin-parities of the 69 Fe ground and isomeric states. Together with mean-field calculations of quadrupole deformation parameters for the Fe isotope chain, these results benchmark a maximum of deformation in the N = 40 island of inversion in Fe and shed light on trends in level densities indicated in the newly refined mass surface.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗