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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Examination of the magnetism dynamics from intermixing effects in γ-Fe{sub 2}O{sub 3}/MnO core-shell nanoparticles

We have examined the effects of core-shell intermixing on the dynamical magnetism of γ-Fe{sub 2}O{sub 3}/MnO nanoparticles. The core and shell phases were identified using x-ray diffraction, and x-ray absorption spectroscopy identified Mn ions in both octahedral and tetrahedral sites, consistent with a significant amount of substitution at the core-shell interface to form an Fe/Mn-ferrite. The dynamical response was probed by Mössbauer spectroscopy, which decouples surface and core spins, and suggested a change in the relaxation behaviour among the spin populations within γ-Fe{sub 2}O{sub 3}/MnO relative to the γ-Fe{sub 2}O{sub 3} seed particles. Interestingly, the magnetic relaxation effects at the atomic scale, measured via Mössbauer spectroscopy, were enhanced, indicating that the addition of an MnO shell and intermixing affected the dynamical freezing process which altered the surface magnetism of the γ-Fe{sub 2}O{sub 3} core. Our results show that both the MnO shell and the interfacial intermixed layer are important in determining the core-shell nanoparticle magnetism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Reliable four-point flexion test and model for die-to-wafer direct bonding

For many years, wafer-to-wafer (W2W) direct bonding has been very developed particularly in terms of bonding energy measurement and bonding mechanism comprehension. Nowadays, die-to-wafer (D2W) direct bonding has gained significant attention, for instance, in photonics and microelectro-mechanics, which supposes controlled and reliable fabrication processes. So, whatever the stuck materials may be, it is not obvious whether bonded D2W structures have the same bonding strength as bonded W2W ones, because of possible edge effects of dies. For that reason, it has been strongly required to develop a bonding energy measurement technique which is suitable for D2W structures. In this paper, both D2W- and W2W-type standard SiO{sub 2}-to-SiO{sub 2} direct bonding samples are fabricated from the same full-wafer bonding. Modifications of the four-point flexion test (4PT) technique and applications for measuring D2W direct bonding energies are reported. Thus, the comparison between the modified 4PT and the double-cantilever beam techniques is drawn, also considering possible impacts of the conditions of measures such as the water stress corrosion at the debonding interface and the friction error at the loading contact points. Finally, reliability of a modified technique and a new model established for measuring D2W direct bonding energies is demonstrated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Non-proportionality of magnetic anisotropy and damping in CoFeB/MgO-based systems

We study the relationship between anisotropy K and damping α in MgO/CoFeB/Ta/CoFeB/MgO/cap films using vector network analyzer ferromagnetic resonance. Capping the stack with Ta and changing the thickness of the top MgO layer allow us to create significant variations in anisotropy while keeping the thickness and process conditions of the magnetic layer constant. The change in anisotropy can be attributed to the degradation of the CoFeB/MgO interface due to Ta intermixing with MgO upon deposition. This hypothesis is supported by measurements of similar samples with the bottom MgO thickness varied instead, which exhibit no significant change in anisotropy. This method of varying K allows identifying a regime where a spin reorientation transition occurs while α remains constant, proving the non-proportionality of K and α in perpendicular CoFeB/MgO systems. The effects of changing the capping layer material, notably Ru, are also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Controlling magnetic domain wall motion in the creep regime in He{sup +}-irradiated CoFeB/MgO films with perpendicular anisotropy

This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He{sup +} ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H{sup −1∕4} behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H{sub dep}. In turn, H* ≈ H{sub dep} is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Annealing effects on recombinative activity of nickel at direct silicon bonded interface

By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB) interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure (XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi{sub 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Interface properties of Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure by cathodoluminescence spectroscopy

We studied formation of the SiO{sub 2}-T{sub 2}O{sub 5} interface in the Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure using Cathodoluminescence Spectroscopy (CLS). Analyzing the evolution of CLS spectrum of the Si-SiO{sub 2} structure while depositing the Ta{sub 2}O{sub 5} layer allowed to estimate an optical transmittance of the Ta{sub 2}O{sub 5} layer and its band gap. Spectral features related to the formation of the SiO{sub 2}-Ta{sub 2}O{sub 5} interface were identified by comparison of the experimental CL spectrum of the Si-SiO{sub 2}-Ta{sub 2}O{sub 5} structure and its simulated counterpart. This formation involves a decomposition of silanol groups at the outer surface of the SO{sub 2} layer and creation of the Si{sub x}Ta{sub y}O-type layer containing luminescence centers with the emission band centered at 3 eV photon energy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Atomic resolution strain analysis in highly textured FePt thin films

In this work, we present a detailed investigation of FePt-substrate interfaces and their influence towards the microstructural and magnetic configurations of the resulting metallic films. Discontinuous FePt films of roughly 15 nm thickness are deposited at 750 °C on MgO, MgAl{sub 2}O{sub 4}, SrTiO{sub 3}, and (La,Sr)(Al,Ta)O{sub 3} single-crystalline substrates. All of these films mainly show out-of-plane textured FePt islands; however, fractions of L1{sub 2} and in-plane oriented crystals are observed for the films on substrates with reduced lattice mismatch. Reduced easy axis coercivities and enhanced hard axis remanence values affirm this observation. Moreover, quantitative high-resolution transmission electron microscope analysis reveals that the reduced lattice mismatch results in a decreased density of dislocations, especially misfit dislocations, at the FePt-substrate interface. To further extend the research, carbon-doped FePt+32%C films are deposited on single-crystalline and sputtered MgO at 750 °C and 650 °C, respectively, to characterize the influence of a segregating media and reduced grain size. A comparison to the pure FePt sample reveals that the presence of seed layer grain boundaries leads to an increased fraction of in-plane oriented material, while the density of misfit dislocations solely depends on the degree of lattice mismatch.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures

We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf|CoFeB|MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A non-monotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thickness is increased above ∼7 nm. Although there might be a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Symmetry-resolved CO desorption and oxidation dynamics on O/Ru(0001) probed at the C K-edge by ultrafast X-ray spectroscopy

In this work, we report on carbon monoxide desorption and oxidation induced by 400 nm femtosecond laser excitation on the O/Ru(0001) surface probed by time-resolved X-ray absorption spectroscopy (TR-XAS) at the carbon K-edge. The experiments were performed under constant background pressures of CO (6x10 -8 Torr) and O 2 (3x10 -8 Torr). Under these conditions, we detect two transient CO species with narrow 2π* peaks, suggesting little 2π* interaction with the surface. Based on polarization measurements, we find that these two species have opposing orientations: (1) CO favoring a more perpendicular orientation and (2) CO favoring a more parallel orientation with respect to the surface. We also directly detect gas-phase CO 2 using a mass spectrometer and observe weak signatures of bent adsorbed CO 2 at slightly higher X-ray energies than the 2π* region. These results are compared to previously reported TR-XAS results at the O K-edge where the CO background pressure was three times lower (2x10 -8 Torr) while maintaining the same O 2 pressure. At the lower CO pressure, in the CO 2π* region, we observed adsorbed CO and a distribution of OC-O bond lengths close to the CO oxidation transition state, with little indication of gas-like CO. The shift towards 'gas-like' CO species may be explained by the higher CO exposure, which blocks O adsorption, decreasing O coverage and increasing CO coverage. These effects decrease the CO desorption barrier through dipole-dipole interaction, while simultaneously increasing the CO oxidation barrier.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Epitaxial (Al x Ga 1-x-y In y ) 2 O 3 Alloys Lattice Matched to Monoclinic Ga 2 O 3 Substrates

We have epitaxially stabilized a series of monoclinic (Al x Ga 1-x-y In y ) 2 O 3 alloys by careful choice of molecular beam epitaxy growth conditions, which balance alloy growth with suboxide desorption. The films are pseudomorphic to (010) β-Ga 2 O 3 substrates at thicknesses up to 150 nm with compositions ranging from (Al 0.01 Ga 0.83 In 0.16 ) 2 O 3 to (Al 0.24 Ga 0.75 In 0.03 ) 2 O 3 . The absorption edge shifts from approximately 4.62-5.14 eV with coincidently increasing Al and decreasing In mole fractions. J-V measurements reveal an increase in resistivity over four orders of magnitude with a maximum value of 4.2 x 10 5 Ω-cm for (Al 0.17 Ga 0.76 In 0.07 ) 2 O 3 , which has nearly identical lattice parameters (both in-plane and out-of-plane) to the underlying β-Ga 2 O 3 . Scanning transmission electron microscopy of this sample reveals a mostly uniform and single crystalline film, though we identify areas of non-uniform In incorporation and some γ-phase inclusions. This work demonstrates the feasibility of thick layers lattice-matched to β-Ga 2 O 3 with increased bandgap compared to phase-separation limited (Al,Ga) 2 O 3 . These alloys can enable higher bandgap epitaxial dielectrics and high sheet charge density transistors by increasing the conduction band offset with respect to β-Ga 2 O 3 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Nonvolatile Ionic Modification of the Dzyaloshinskii-Moriya Interaction

The possibility of tuning the Dzyaloshinskii-Moriya interaction (DMI) by electric (E)-field gating in ultrathin magnetic materials has opened up new perspectives in terms of controlling the stabilization of chiral spin structures. The most recent efforts have used voltage-induced charge redistribution at the interface between a metal and an oxide to modulate the DMI. This approach is attractive for active devices but tends to be volatile, making it energy-demanding, and it is limited by Coulomb screening in the metal. Here we demonstrate nonvolatile E-field manipulation of the DMI by ionic-liquid gating of Pt/Co/Hf ⁢O 2 ultrathin films. The E-field effect on the DMI scales with the E-field exposure time, and we propose that it is linked to the migration of oxygen species from the Hf⁢ O 2 layer into the Co and Pt layers and subsequent anchoring. Here, this effect permanently changes the properties of the material, showing that E fields can be used not only for local gating in devices but also as a highly scalable materials design tool for postgrowth tuning of the DMI.

Domain walls↗
DOE OSTI2020

Influence of the Turing instability on the motion of domain boundaries

Turing's theory of pattern formation has provided crucial insights into the behavior of various biological, geographical, and chemical systems over the last few decades. Existing studies have focused on moving-boundary Turing systems for which the motion of the boundary is prescribed by an external agent. In this paper, we present an extension of this theory to a class of systems in which the front motion is governed by the physical processes that occur within the domain. Biological systems exhibiting apically dominant growth and corrosion of metals and alloys highlight some of the noteworthy examples of such systems. In this study, we characterize the nature of interaction between the moving front and the Turing-instability for both an activator-inhibitor and an activator-substrate model. Behavioral regimes of periodic, as well as nonperiodic (nonconstant), growth rates are obtained. Furthermore, the trends in the first show striking similarities with the cyclic-boundary-kinetics observed in experimental systems. In general, a stationary, periodic structure is also left behind the moving front. If the periodicity of the boundary kinetics agrees with the allowed range of the stable-periodic solutions, the pattern formed tends to persist. Lastly, it evolves to a nearby energy-minimum either by peak-splitting, peak-decay, or by settling down to a spatially homogeneous state.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2023

Study of the structure, structural transition, interface model, and magnetic moments of CrN grown on MgO(001) by molecular beam epitaxy

Structural phase transition is studied in high quality CrN thin films grown by molecular beam epitaxy on MgO(001) substrates. Cross-sectional transmission electron microscopy and x-ray diffraction reveal that the epitaxial relationship between CrN film and MgO substrate is [100] CrN /[100] MgO , [110] CrN /[110] MgO , and [001] CrN /[001] MgO . The films show tensile strain/compression at the CrN/MgO(001) interface, which relaxes gradually with the film growth. Temperature dependent x-ray diffraction measurements show a first-order structural phase transition. In addition to the experimental measurements, first-principles theoretical calculations have been carried out for finding a stable model for the CrN/MgO interface. Furthermore, these calculations determine two possible models for the interface, where a monolayer of chromium oxide is formed between the CrN and MgO layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Atomic-scale interface engineering of Majorana edge modes in a 2D magnet-superconductor hybrid system

Topological superconductors are predicted to harbor exotic boundary states—Majorana zero-energy modes—whose non-Abelian braiding statistics present a new paradigm for the realization of topological quantum computing. Using low-temperature scanning tunneling spectroscopy, here, we report on the direct real-space visualization of chiral Majorana edge states in a monolayer topological superconductor, a prototypical magnet-superconductor hybrid system composed of nanoscale Fe islands of monoatomic height on a Re(0001)-O(2 × 1) surface. In particular, we demonstrate that interface engineering by an atomically thin oxide layer is crucial for driving the hybrid system into a topologically nontrivial state as confirmed by theoretical calculations of the topological invariant, the Chern number.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Morphological and Surface Structural Changes during Electrochemical Cycling in Li-rich Layered Oxides for Next Generation Li-ion Batteries

Li-rich layered oxides, either as a solid solution or as a nano-composite of layered Li 2 MnO 3 and Li(TM)O 2 (TM=Ni, Co, Mn), draw significant attention as the next-generation cathode materials for high-energy-density Li-ion batteries in electric vehicles. However, there are many issues still unclear, and numerous scientific challenges of these materials that must be overcome to realize their utilization in commercial Li-ion batteries. The first drawback is the irreversible voltage degradation process that limits cycle life. Modified co-precipitation synthesis is introduced to obtain morphology controlled Li-rich material without ammonia addition. This unique design increases meso-structure morphological stability compared with the sample with large secondary particles as proved by Transmission X-ray Microscope. As a result, the voltage decay and capacity loss during long term cycling have been minimized to a large extent. On the other hand, lattice oxygen plays an intriguing role in the electrochemical process of Li-rich material through a reversible redox process as well as an irreversible oxidation with O 2 gas release. To prevent oxygen gas generation, oxygen vacancies have been proposed to form on the surface of the morphology controlled Li-rich layered oxides through the design of a gas-solid interface reaction (GSIR). Dynamic structural changes during the initial two electrochemical cycles of GSIR Li-rich layered oxides are investigated with In operando synchrotron X-ray diffraction (SXRD). Different electrochemical reaction regions dominated by either cations or anions redox are identified in the shifts of the lattice parameters during the first cycle. Changes in lattice parameters, oxygen positions, and microstrain help to explain the lithium de-intercalation mechanism in this class of materials.

Zhang, Minghao↗
DOE OSTI2021

Studying Interfacial Dark Reactions of Glyoxal and Hydrogen Peroxide Using Vacuum Ultraviolet Single Photon Ionization Mass Spectrometry

Aqueous secondary organic aerosol (aqSOA) formation from volatile and semivolatile organic compounds at the air–liquid interface is considered as an important source of fine particles in the atmosphere. However, due to the lack of in situ detecting techniques, the detailed interfacial reaction mechanism and dynamics still remain uncertain. In this study, synchrotron-based vacuum ultraviolet single-photon ionization mass spectrometry (VUV SPI-MS) was coupled with the System for Analysis at the Liquid Vacuum Interface (SALVI) to investigate glyoxal dark oxidation products at the aqueous surface. Mass spectral analysis and determination of appearance energies (AEs) suggest that the main products of glyoxal dark interfacial aging are carboxylic acid related oligomers. Furthermore, the VUV SPI-MS results were compared and validated against those of in situ liquid time-of-flight secondary ion mass spectrometry (ToF-SIMS). The reaction mechanisms of the dark glyoxal interfacial oxidation, obtained using two different approaches, indicate that differences in ionization and instrument operation principles could contribute to their abilities to detect different oligomers. Therefore, the mechanistic differences revealed between the VUV SPI-MS and ToF-SIMS indicate that more in situ and real-time techniques are needed to investigate the contribution of the air–liquid interfacial reactions leading to aqSOA formation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗