Correlation between hot spots and 3-D defect structure in single and polycrystalline high-explosive materials
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Presented by NETL at MS&T18, 10/18
Presented by NETL at ACS Fall Meeting, 8/18
Doped nitride-based semiconductor materials and methods of producing these materials are described herein.
The surface oxidation processes of thin films of magneto-optic materials, such as the rare-earth transition metal alloys have been studied, starting in ultrahigh vacuum environments, using surface analysis techniques, as a way of modeling the oxidation processes which occur at the base of a defect in an overcoated material, at the instant of exposure to ambient environments. Materials examined have included FeTbCo alloys, as well as those same materials with low percentages of added elements, such a Ta, and their reactivities to both O2 and H2O compared with materials such as thin Fe films coated with ultrathin adlayers of Ti. The surface oxidation pathways for these materials is reviewed, and XPS data presented which indicates the type of oxides formed, and a critical region of Ta concentration which provides optimum protection.
Abstract not provided
Intrinsic silicon (Si) is forbidden for infrared (IR) sensing at the communication wavelength like 1.31 or 1.55 µm due to the well‐known bandgap limitation. In this work, an unexpected physical picture of using argon (Ar) is identified, which is usually inert to the surrounding chemical environment and used as a protective agent in semiconductor processing, to overcome the IR‐sensing‐forbidden problem in Si. Here, in this work, it is shown by an analysis of a dynamic secondary ion mass spectrometer that such a Si, when exposed to laser pulse in Ar gas, can contain a very high dose of Ar up to 10 20 cm −3 even after 1300 days. First‐principles calculations, molecular dynamics, and Hall effect measurements reveal that, due to both steric and dynamic repulsions by Ar orbitals to Si dangling bonds, the Ar‐filled‐vacancy produces a much wider defect band inside the gap, which is not only responsible for strong infrared absorption, but also causes a significant increase in n‐type conductivity, both in line with experiments. The study proves that originally inert elements in fact can act as active impurities in semiconductors for advanced applications, which updates the current knowledge of defect physics.
This presentation is part of an annual review for the new Advanced Materials and Manufacturing Technologies program under the Office of Nuclear Energy within the Department of Energy. This presentation covers advances in physics-based modeling and machine learning for environmental effects in nuclear materials. It discusses efforts in combining density functional theory with machine learning to predict material properties, studying irradiation defect recombination, and improving MOOSE-based tools for crystal plasticity modeling and the Stochastic Tools Module.
The short- and long-range order of III–V materials under high pressure has long been the subject of debate, with advancements in structural characterization leading to significant revisions to the accepted structural models. Despite these revisions, previous high-pressure structural assignments in the In–Bi system include the site-disordered β-Sn structure type, a structure type demonstrated to be nonexistent in analogous III–V systems. While X-ray diffraction is consistent with site disordering in InBi at high pressure, cluster expansion calculations indicate that disordering requires temperatures above 3000 K. Here, we propose InBi as a model material for studying unique high-pressure planar defects due to its highly anisotropic stress-dependent properties and structure. Specifically, we identify two sets of planar defects that mimic the diffraction pattern of a site disordered β-Sn structure type and are compatible with the calculated disorder barrier. We derive these defects by symmetry relations over crystallographic transitions. Density functional theory calculations of the proposed defects suggest that these defects are stabilized by diminishing interlayer separations with pressure. Further, we find that one of the proposed defects closely resembles a bulk high-pressure phase of InBi, InBi-ϵ, and we assert that the proposed defects order upon heating, acting as a template for InBi-ϵ growth. The proposed defects and their electronic structure provide a basis for the trend of superconducting critical temperature with increasing pressure. These methods for identifying defects are generalizable to other materials with reports of site disorder at high pressure, prompting a broader search for related high-pressure defects.
We present detailed structural and thermoelectric studies of the ternary compound Ce{sub 3}Cu{sub 3}Sb{sub 4}. This material is of interest due to previously reported considerable thermopower above room temperature (∼ 100 μV/K) and low thermal conductivity (2 W/(m K)). Here, we present detailed studies concerning microstructural and thermoelectric data, their variation across the samples and possible explanations for the observed behaviour. We have used X-ray diffraction, scanning electron microscopy (SEM), and time-of-flight secondary ion mass spectrometry (TOF-SIMS) for microstructural analysis. The thermoelectric properties were examined using a physical property measurement system (PPMS). We analyse the impact of the sample quality on the thermoelectric properties. The most unstable parameter is the material resistivity which varies between 1.5 and 15 mΩ cm at room temperature. The properties variability is mainly due to structural defects caused by stresses during material preparation and also due to formation of foreign phases CeCuSb{sub 2} and CeSb. The figure of merit ZT is also strongly dependent on the quality of the sample. The largest value ZT ≈ 0.15 at 400 K is determined for the almost stoichiometric sample with small amounts of a impurity phases. - Highlights: •The Ce{sub 3}Cu{sub 3}Sb{sub 4} has considerable thermoelectric properties and potential for further chemical and/or structural modification. •The control over foreign phases formation is challenging. •The defects arising during arc melting process highly deteriorate ZT of material.
Not Available
The adoption of composite materials in aircraft manufacturing for use in structural applications continues to increase but is still relatively new to the industry. Composite components have large development and certification costs in comparison to metallic structures. Traditional methods of nondestructive evaluation (NDE) used for isotropic materials such as metals may not be adequate for composite applications and therefore is a contributing factor to the cost and complexity of developing new structural composites. Additionally, the defects of interest in composite materials are significantly different from metals. Thus, good quality composite reference standards are essential to obtaining reliable and quantifiable NDE results. Ideally, reference standards contain flaws or damage whose NDE indications most closely represent those created by actual flaws/damage. They should also be easy to duplicate and inexpensive to manufacture. NASA’s Advanced Composites Project, working with industry partners, developed a set of composite standards that contain a range of validated defects representing those typically found in aerospace composite materials. This paper will provide an overview of the standards fabricated, the manufacturing plans used to fabricate them, the types of defects included, and validation testing that has performed. Also discussed is an inter-laboratory “round-robin” test that is being performed on these standards. The paper will describe a guidance document being compiled to outline relevant inspection procedures for challenging and critical defects unique to composites where conventional techniques may not be appropriate.
The full realization of spin qubits for quantum technologies relies on the ability to control and design the formation processes of spin defects in semiconductors and insulators. We present a computational protocol to investigate the synthesis of point-defects at the atomistic level, and we apply it to the study of a promising spin-qubit in silicon carbide, the divacancy (VV). Our strategy combines electronic structure calculations based on density functional theory and enhanced sampling techniques coupled with first principles molecular dynamics. We predict the optimal annealing temperatures for the formation of VVs at high temperature and show how to engineer the Fermi level of the material to optimize the defect’s yield for several polytypes of silicon carbide. Our results are in excellent agreement with available experimental data and provide novel atomistic insights into point defect formation and annihilation processes as a function of temperature.
The current majority view on the phenomenon of mechanical failure in metallic glasses appears to be that it is caused by the activity of some structural defects, such as free-volumes or shear transformation zones, and the concentration of such defects is small, only of the order of 1%. However, the recent results compel us to revise this view. Through molecular dynamics simulation it has been shown that mechanical failure is the stress-induced glass transition. According to our theory the concentration of the liquid-like sites (defects) is well over 20% at the glass transition. We suggest that the defect concentration in metallic glasses is actually very high, and percolation of such defects causes atomic avalanche and mechanical failure. In this article we discuss the glass transition, mechanical failure and viscosity from such a point of view.
Radiation damage of structural materials leads to mechanical property degradation, eventually inducing failure. Secondary-phase dispersoids or other radiation defect sinks are often added to materials to boost their radiation resistance. We demonstrate that a metal composite made by adding 1D carbon nanotubes (CNTs) to aluminum (Al) exhibits superior radiation resistance. In situ ion irradiation with transmission electron microscopy (TEM) and atomistic simulations together reveal the mechanisms of rapid defect migration to CNTs, facilitating defect recombination and enhancing radiation tolerance. The origin of this effect is an evolving stress gradient in the Al matrix resulting from CNT transformation under irradiation, and the stability of resulting carbides. Extreme value statistics of large defect behavior in our simulations highlight the role of CNTs in reducing accumulated damage. Furthermore, this approach to controlling defect migration represents a promising opportunity to enhance the radiation resistance of nuclear materials without detrimental effects.
Previously, it was demonstrated that due to a high surface-to-volume ratio, nanoporous materials display radiation tolerance. The abundance of surfaces, which are perfect sinks for defects, and the relation between ligament size, defect diffusion, and time combine to define a window of radiation resistance [Fu et al., Appl. Phys. Lett. 101, 191607 (2012)]. Outside this window, the dominant defect created by irradiation in Au nanofoams are stacking fault tetrahedra (SFT). Molecular dynamics computer simulations of nanopillars, taken as the elemental constituent of foams, predict that SFTs act as dislocation sources inducing softening, in contrast to the usual behavior in bulk materials, where defects are obstacles to dislocation motion, producing hardening. In this work we test that prediction and answer the question whether irradiation actually hardens or softens a nanofam. Ne ion irradiations of gold nanofoams were performed at room temperature for a total dose up to 4 dpa, and their mechanical behavior was measured by nanoindentation. We observe that hardness increases after irradiation, a result that we analyze in terms of the role of SFTs on the deformation mode of foams.