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At least 1,405 records · Page 78

Reducing Non-Radiative Recombination in Perovskite Solar Cells with a SiO2-Graphene Oxide Buried Interface Layer

Perovskite solar cells (PSCs) have emerged as a transformative photovoltaic technology. However, the device performance of inverted PSCs is dramatically limited by surface defects and the underlying film morphology of metal halide perovskite (MHP) thin film. Herein, we report a novel buried interface layer consisting of SiO2 nanoparticles (NPs) chemically bonded to graphene oxide (GO), deposited atop a hydrophobic hole extraction layer (HEL) to address this limitation. The SiO2 NPs serve as insoluble scaffolds that immobilize GO sheets on the hydrophobic HEL surface, enabling the formation of homogeneous MHP thin films. Meanwhile, the GO functional groups interact with surface-uncoordinated Pb2+, suppressing interfacial defects and guiding crystal grain growth of the resultant MHP thin films. This synergistic effect suppresses non-radiative charge recombination and enhances charge extraction efficiency. As a result, a 26.07% efficiency with significantly suppressed photocurrent hysteresis is observed from PSCs incorporating the SiO2-GO buried interface layer. Moreover, the above PSCs maintain 92% of their initial PCE after 1800 h of continuous operation at the maximum power point under AM 1.5 G (100 mW/cm2) illumination at 25 degrees C in air with 50-60% relative humidity. These results demonstrate that we have developed a facile and effective way to realize high-performance inverted PSCs.

14 SOLAR ENERGY↗

Phonon lifetimes and mode softening in cubic Cs 2 AgBiBr 6

Metal halide perovskites (MHPs) have emerged as noteworthy candidates for photovoltaic applications in recent years. Their high power-conversion efficiency is largely attributed to the structure-function relationship, which is not well understood. In this study, we examine the low-frequency phonons of the double perovskite Cs 2 AgBiBr 6 using neutron inelastic scattering. We find that the acoustic phonon lifetimes decrease from 16 to 3 ps along Γ to X, which is indicative of significant anharmonicity that contributes to the ultralow thermal conductivity. Additionally, we observe a linear temperature dependence of the square of the zone-center soft optical phonon energy, which is consistent with a weakly first-order displacive cubic-tetragonal structural phase transition. These results provide a deeper understanding of the lattice dynamics and phase transitions in MHPs as well as the effects of anharmonicity by comparison with prototypical hybrid organic-inorganic MHPs, (CH 3 NH 3 ) PbX 3 (X = Br, I).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Phosphonic-Acid-Reinforced Polymer Hole Transport Layers for Deployable p-i-n Perovskite Photovoltaics

The long-term durability prospects of halide perovskite solar cells are rapidly improving; however, the interface between the hole transport layer (HTL) and the perovskite remains a source of degradation. Alone, polymer- or carbazole-based HTLs suffer from incomplete coverage of the underlying indium tin oxide glass, leading to degradation and compromised performance. Here, we show a multi-HTL approach whereby a polymer HTL is reinforced using a phosphonic acid modification leading to better protection of the buried perovskite interface and more columnar growth of perovskite film, resulting in an ~40-mV open-circuit voltage (VOC) improvement indicative of suppressed interfacial recombination across multiple p-i-n device architectures. Solar cells with this reinforced HTL show higher tolerance to several accelerated stress tests. We report, among the best durabilities for unencapsulated cells, a T90 ~3,000 h (T80 ~5,900 h) at 65 degrees C under continuous 1.2 sun AM 1.5G illumination and maximum power point tracking, representing a nearly 4-fold increase compared with [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz)-only devices. Furthermore, we deployed a device with this reinforced HTL on a cube satellite, with long-duration operational space testing results exceeding T80 for the complete mission duration of ~100 days in low Earth orbit.

14 SOLAR ENERGY↗

Performance characterization of 5×5×12 mm 3 virtual Frisch-grid TlBr detectors

Thallium bromide (TlBr) is a promising material for semiconductor gamma-ray detectors due to its high atomic number (Tl = 81, Br = 35), high density (7.56 g/cm 3 ), and relatively low melting point (460 °C). These properties give TlBr several competitive features, including high detection efficiency, good energy resolution, and lower fabrication costs, making it suitable for applications requiring compact, highly sensitive gamma-ray detection systems. Recent developments of TlBr detectors have progressed toward thicker crystals, up to 10–20 mm, configured as pixelated or virtual Frisch-grid (VFG) devices with volumes >1 cm 3 . Despite these advances, challenges remain in practical implementation, including material and fabrication issues that affect energy resolution, device stability, performance, and longevity. These challenges are similar to those faced by HgI 2 and lead-halide perovskite detectors. Here, this study presents results from characterizing over 100 position-sensitive 5×5×12 mm 3 virtual Frisch-grid detectors fabricated by Radiation Monitoring Devices Inc. For a prototype Radioisotope Identification Device (RIID). The work identified factors limiting the performance and longevity of TlBr detectors, including stochastic response variations that limit the energy resolution to 2–3 % (at 662 keV) for most devices, performance degradation associated with defect decoration, and contact delamination. Addressing these issues advances the use of TlBr and similar materials for reliable, high-resolution gamma-ray spectroscopy.

47 OTHER INSTRUMENTATION↗

Synthesis and structural characterization of bis (2-pyridylthio)( p -tolylthio)methyl zinc complexes and the catalytic hydrosilylation of CO 2

Bis(2-pyridylthio)(p-tolylthio)methane, [Bptm STol ]H, has been synthesized by treatment of a 2:1 mixture of 2-mercaptopyridine and p-thiocresol with NaH, followed by addition of CHI3. Access to zinc complexes is provided by the reaction of [Bptm STol ]H with Zn[N(SiMe 3 ) 2 ] 2 to afford [Bptm STol ]ZnN(SiMe 3 ) 2 , from which the halide derivatives [Bptm STol ]ZnX (X = Cl, Br, I) are obtained via reaction with Me 3 SiX (X = Cl, Br, I), and the formate complex, [Bptm STol ]ZnO 2 CH, is obtained by treatment with CO 2 in the presence of PhSiH 3 . Here, the molecular structures of [Bptm STol ]ZnN(SiMe 3 ) 2 , [Bptm STol ]ZnX (X = Cl, Br, I) and [Bptm STol ]ZnO 2 CH have been determined by single crystal X-ray diffraction, which indicate that the four coordinate zinc centers adopt structures that are intermediate between idealized trigonal monopyramidal and seesaw geometries. [Bptm STol ]ZnO 2 CH is a catalyst for the hydrosilylation of CO 2 by (RO) 3 SiH at room temperature to afford the silyl formate, HCO 2 Si(OR) 3 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

f-Element complexes with benzyl and cyclohexyl substituted trihydroborates

Actinide complexes containing the simplest borohydrides (BH 4 ) 1- and (MeBH 3 ) 1- can exhibit remarkably highly volatility, which creates unique hazards and handling challenges, especially when making measurements on solid samples under vacuum. Here we describe efforts to prepare new actinide borohydride complexes with attenuated volatility by adding bulkier benzyl (Bn) and cyclohexyl (Cy) substituents to boron. Reactions of ThCl 4 , UI 3 (thf) 4 , and NdI 3 with the mixed alkali metal salt Li/K(BnBH 3 )(thf) n yielded Th(BnBH 3 ) 4 (thf) 2 , U(BnBH 3 ) 4 (thf) 2 , and K[Nd(BnBH 3 ) 4 ], respectively. Notable amongst these, the reaction with UI 3 (thf) 4 proceeds via oxidation of U(III) to U(IV) despite the presence of reducing borohydride ligands. Similarly, reactions of the same metal halides with four equivalents of Li(CyBH 3 )(Et 2 O) n yielded Th(CyBH 3 ) 4 , U(CyBH 3 ) 4 (thf) 2 , and [Li(Et 2 O) 3 ][Nd(CyBH 3 ) 4 ]. Single crystal X-ray diffraction studies of the M(BnBH 3 ) 4 (thf) 2 complexes with M = Th and U confirmed their formulations. Furthermore, the complexes have approximate D 2d point group symmetry and adopt bicapped hexagonal antiprismatic coordination geometries with axial thf ligands and κ 3 -BnBH 3 ligands bound in the equatorial plane. K[Nd(BnBH 3 ) 4 ] and [Li(Et 2 O) 3 ][Nd(CyBH 3 ) 4 ], which were prepared for comparison to U(III) complexes that were unsuccessfully targeted, were also structurally characterized to reveal complex anions with tetrahedral arrangements of trihydroborate ligands bound to Nd(III). Crystals obtained for Th(CyBH 3 ) 4 and U(CyBH 3 ) 4 (thf) 2 were not suitable for XRD studies, but 1 H and 11 B NMR spectra were consistent with their formulations. Collectively, these complexes represent rare examples of structurally characterized f-element trihydroborate complexes with carbon substituents other than methyl.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effects of potassium treatment on SnO 2 electron transport layers for improvements of perovskite solar cells

SnO 2 has been studied intensively as an electron transport layer (ETL) for highly efficient metal halide perovskite solar cells. However, SnO 2 ETL frequently exhibits defect-related issues associated with the bulk SnO 2 and the perovskite/SnO 2 interface, and to passivate the defect states potassium ion has been used. In order to investigate the passivation effect of potassium ion, we carried out KCl treatment on the solution-processed SnO 2 ETL. It was found that KCl-treatment shifted up conduction band maximum and Fermi energy of SnO 2 , and reduced the band gap of perovskite absorber by K + diffusion, which resulted in a better conduction band alignment at perovskite/SnO 2 . Admittance spectroscopy revealed that diffused K + ions can passivate defects of the perovskite absorber layer. With the improvement of band alignment and defect passivation via the KCl treatment, the J-V hysteresis was almost eliminated and power conversion efficiency was much enhanced with improved open-circuit voltage and fill factor.

14 SOLAR ENERGY↗

Toward Quality Control in Perovskite Solar Cell Fabrication: Spot-Like Processing Defects Disrupt Charge Transport Layers and Promote Ag Metal Electrode Intrusion

Metal halide perovskite (MHP) photovoltaics provide high efficiencies with less stringent processing requirements than traditional photovoltaic materials. However, processing related defects must be suppressed as they can lead to decreases in initial device efficiency and potentially compromise long-term device operation. In this work we investigate morphological defects in MHP devices using luminescence imaging followed by in-depth structural and composition analysis using electron microscopy-based methods. We identify several different classes of spot-like processing-related defects and observe that a single device structure may contain multiple types of these defects. The presence of these defects in devices with different layer structures and absorber chemistries makes them relevant to the perovskite photovoltaic community as a whole. The defects are associated with voids in the perovskite layer, inclusions (glass, migrated Ag, dust), thickness variations, hole transport layer disruption with anomalous crystal growth, and electron transport layer disruptions that could allow Ag intrusion and lead to local shunts. As perovskite photovoltaic technology matures, mitigation of such defects is critical to improving not only initial performance but also the long-term stability required for industrial applications.

14 SOLAR ENERGY↗

Carrier gradients and the role of charge selective contacts in lateral heterojunction all back contact perovskite solar cells

Realizing photovoltaic devices that achieve the full potential of the metal halide perovskite material will require improved insight regarding the role of selective contacts and how key interfaces operate when mobile defects are present. However, measuring interface properties in typical device stacks where the perovskite layer is thin and sandwiched between two contacts has been a challenge. Here, we fabricate p-i-n and p-n lateral heterojunctions with nickel oxide/titanium oxide all back contacts, permitting us to employ a comprehensive analysis approach, including ultraviolet and X-ray photoemission spectroscopy (UPS/XPS), angle-resolved X-ray absorption spectroscopy (XAS), Kelvin probe force microscopy (KPFM), surface photovoltage (SPV), hyperspectral imaging (HSI), and time-resolved fluorescence lifetime imaging microscopy (TR-FLIM) to discern the role of selective contacts. Specifically, we tune the selectivity of the contacts, changing the gradient in the carrier concentration across the surface of the active layer, which is connected to carrier extraction at the buried interface, and thus the device functionality.

25 ENERGY STORAGE↗

Modeling and design of III-V heterojunction solar cells for enhanced performance

Heterojunctions can increase the efficiency of solar cell devices relative to homojunctions, but there is a large parameter space with significant tradeoffs that must be considered. Here, we present an experimental and computational study of III-V heterojunction solar cells and show how the emitter doping, emitter band gap, and heteroband offsets impact device efficiency. Efficiency is maximized by pushing the junction depletion region into the wider band gap material while minimizing the effects of heteroband offsets through optimized choice of emitter band gap, emitter electron affinity, and/or emitter doping density. We use these results to guide optimization of devices grown by halide vapor phase epitaxy, achieving 27% efficiency in a GaAs/GaInPAs heterojunction device. We also show that heterojunctions yield proportionally larger efficiency improvements in lower-quality materials. Although the modeling was developed and validated using III-V materials, the results are theoretically applicable to materials systems outside III-Vs.

14 SOLAR ENERGY↗

Crystal Growth Scale-Up and Stability of RbSr 2 X 5 :Eu Scintillators

The discovery and development of new scintillation materials support national security needs. In these applications, large volumes of scintillator crystals are needed to achieve efficient screening for contraband. Therefore, one important step in the discovery of new scintillator compositions is testing their feasibility for scale-up and their stability. In this work, high-quality Ø22 mm crystals of two new scintillators RbSr 2 Br 5 :Eu and RbSr 2 I 5 :Eu were grown via the Vertical Bridgman method, and their scintillation properties were characterized. Here, the Ø22 mm RbSr 2 I 5 :Eu crystals could be grown with fast translation rates up to 3.5 mm/h. Both RbSr 2 Br 5 :Eu and RbSr 2 I 5 :Eu had high scintillation performance, including light yields of 46,000 and 61,000 ph/MeV, respectively, for Ø22 × 35 mm crystals. Additionally, properties related to physical stability were investigated, including the coefficients of thermal expansion via high-temperature X-ray diffraction (HTXRD) as well as moisture sensitivity. HTXRD confirmed the absence of solid–solid phase transitions and showed that RbSr 2 Br 5 had minimal thermal expansion anisotropy compared to RbSr 2 I 5 and some other inorganic metal halide scintillators, which favors the growth of large-sized crystals.

36 MATERIALS SCIENCE↗

Enhancing Chemical Stability and Suppressing Ion Migration in CH 3 NH 3 PbI 3 Perovskite Solar Cells via Direct Backbone Attachment of Polyesters on Grain Boundaries

Organic–inorganic halide perovskites feature excellent optoelectronic properties but poor chemical stability. While passivating perovskite grain boundary (GB) by polymers shows prospects on long-term performance of perovskite solar cells (PSCs), its detailed impact on the ion migration phenomenon, which largely deteriorates the PSC stability, remains less probed. In this work, we introduce a new polar polymer, polycaprolactone (PCL), to passivate GBs of methylammonium lead triiodide (MAPbI 3 ) perovskite with only 1–2 polymer monolayers via direct backbone attachment. The PSCs with passivated MAPbI 3 , using a classic but less stable Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene) hole transport layer (HTL), exhibit improved power conversion efficiencies up to 20.1%, with 90% of the initial PCE being preserved after 400 h ambient storage, and 80% even after 100 h, 85 °C aging. The improved PSC stability indicates critical roles of PCL GB passivation in retarding moisture-induced decomposition and suppressing ion migration within the perovskite. Furthermore, time-of-flight secondary ion mass spectrometry reveals that I– ions can actively migrate into the electrode, HTL, and their interface in nonpassivated PSCs, even without an externally applied electric field, while such migration is significantly mitigated in PCL-passivated PSCs. This effective GB passivation by PCL suggests an important potential of polymer additives toward the development of stable high-performance PSCs.

36 MATERIALS SCIENCE↗

On the Origin of Room-Temperature Amplified Spontaneous Emission in CsPbBr 3 Single Crystals

CsPbBr 3 is an all-inorganic halide perovskite with excellent photoluminescence (PL) properties for laser applications. Amplified spontaneous emission (ASE) is a prerequisite for lasing and typically observed from low-dimensional CsPbBr3 nanostructures, where quantum confinement enhances ASE. However, a gain medium for lasing should be prepared into a robust bulk form that works under intense light illumination. Here, we demonstrate that bulk CsPbBr 3 single crystals exhibit highly efficient ASE with a threshold of 46 MWcm -2 at 520 nm, if PL reabsorption via the indirect Rashba gap is properly suppressed by thickness control. Based on a series of spectroscopic and microscopic measurements, we show that this below-the-gap absorption can significantly alter the PL feature and even the apparent color of the crystal depending on the crystal size. Our results show that a thin CsPbBr 3 single crystal can be utilized for lasing applications when engineered into a submillimeter thickness for effective light–matter interaction.

36 MATERIALS SCIENCE↗

Lowering the Activation Barriers for Lithium-Ion Conductivity through Orientational Disorder in the Cyanide Argyrodite Li6PS5CN

Rapid advancements in safe and high-energy-density energy storage are predicated on identifying new solid-state ion conductors with low activation energies and high ionic conductivities for all-solid-state battery technologies. Halide argyrodites are among some of the top candidates for solid-state electrolytes, as they can achieve ionic conductivities that approach liquid electrolytes. Incorporating dynamic pseudohalide species in argyrodite solid electrolytes presents an exciting opportunity to exploit lattice dynamics as a design principle to modulate the ion conduction properties of solid-state ion conductors. In the present study, we have prepared the new argyrodite Li 6 PS 5 CN containing orientationally disordered cyanide ions. The new cyanide argyrodite Li 6 PS 5 CN exhibits an activation barrier to Li-ion transport of 471 ± 25 meV and a room-temperature ionic conductivity of 6(2) × 10 –5 S cm –1 in comparison to the activation barrier of 502 ± 16 meV and an ionic conductivity of 2.3(1) × 10 –4 S cm –1 measured for the bromide analogue Li 6 PS 5 Br. Structural studies of both compounds by high-resolution X-ray diffraction indicate that Li 6 PS 5 CN and Li 6 PS 5 Br adopt nearly identical crystal structures with similar lattice parameters, which indicates that lower activation barriers in Li 6 PS 5 CN arise due to the cyanide ion itself rather than due to changes in the geometry of conduction pathways in the local lithium environment. The orientational disorder of the quadrupolar cyanide ion in Li 6 PS 5 CN points to a complex interplay of lattice polarizability and molecular dynamics that lower the activation barrier for lithium-ion conductivity in the cyanide argyrodite.

25 ENERGY STORAGE↗

Growth-Controlled Broad Emission in Phase-Pure Two-Dimensional Hybrid Perovskite Films

Two-dimensional hybrid metal halide perovskites (2D perovskites) are attractive for light-emitting devices and other applications because their emission is tunable across the visible spectrum. The emission profile of 2D perovskites can be broadened via a variety of mechanisms and is further complicated by the presence of impurities. Here, the challenge of making phase-pure films in Ruddlesden–Popper phases [(A') 2 (A) n–1 B n X 3n+1 structure] is overcome by using a single A/A'-site cation, ethylammonium (EA), whose optimal size also prohibits the formation of off-target phases. In the (EA) 2 (EA) n–1 Pb n Br 3n+1 family, the low-energy, broad emission observed in bulk crystals is reduced in spin-cast, polycrystalline films. This decrease in broad emission, attributed to phonon-mediated processes, is correlated with the strain in polycrystalline films that is observed by X-ray scattering. Photothermal deflection spectroscopy shows that strain also increases the electronic disorder near the free exciton absorbance. Broad emission in films can be recovered by slowing growth kinetics, which removes the strain acquired from spin-casting and increases the domain size. Furthermore, these results help extend the utility of 2D perovskites by suggesting design rules for the growth of thin films with the targeted phase and emission.

36 MATERIALS SCIENCE↗

CeTaN 3 and CeNbN 3 : Prospective Nitride Perovskites with Optimal Photovoltaic Band Gaps

Perovskites constitute an exceptionally tunable materials family with diverse applications in electronics, optoelectronics, energy, and quantum technologies. Out of the thousands of known perovskites, the majority of compounds are oxides, halides, and chalcogenides. In contrast, only two nitride perovskites are currently known. In this work we perform a thorough ab initio computational screening of possible nitride perovskites, and we identify two new compounds, CeNbN 3 and CeTaN 3 , with band gaps in the near-infrared to visible range, depending on temperature. In their room-temperature orthorhombic phase, we predict that both compounds exhibit direct or quasidirect band gaps in the range 1.1–2.0 eV, with the Pnma phases matching the Shockley–Queisser limit for photovoltaic energy conversion efficiency. Further, these compounds are also predicted to be strong light absorbers, with absorption coefficients surpassing those of high-performance semiconductors such as GaAs and CH 3 NH 3 PbI 3 . The present findings reveal a potentially new class of nitride semiconductors with promise for electronics, optoelectronics, and light harvesting and for integration with existing nitride-based lighting technology.

36 MATERIALS SCIENCE↗

Unraveling the Growth Mechanism of Strongly Confined CsPbBr 3 Perovskite Quantum Dots under Thermodynamic Equilibrium Control

Size-confined lead halide perovskite quantum dots (PQDs) are promising materials for optoelectronic devices. Large quantities of PQDs with high ensemble uniformity are often needed for device fabrication. The thermodynamic-equilibrium-controlled synthesis can produce PQDs with good size and shape uniformity. Unfortunately, scaling up this synthesis often produces unwanted perovskite nanoplatelets (NPLs). To date, the PQD and NPL growth mechanism under thermodynamic equilibrium control remains unexplored. We discovered that the growth of size-confined CsPbBr 3 PQDs is mediated by ultrasmall (~ 2.4 nm) metastable nanoclusters. These nanoclusters can eventually grow into PQDs when sufficient Cs-precursors are provided. Otherwise, the unreacted nanoclusters will self-assemble and fuse into NPLs during the synthesis and/or PQD purification. Furthermore, by controlling the homogeneous growth of nanoclusters, strongly confined (≤ 5 nm) PQDs with high size uniformity can be produced at the gram scale.

77 NANOSCIENCE AND NANOTECHNOLOGY↗