Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “facet”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Investigation of Sn surface segregation during GeSn epitaxial growth by Auger electron spectroscopy and energy dispersive x-ray spectroscopy

The mechanism of Sn surface segregation during the epitaxial growth of GeSn on Si (001) substrates was investigated by Auger electron spectroscopy and energy dispersive X-ray spectroscopy. Sn surface segregation depends on the growth temperature and Sn content of GeSn layers. During Sn surface segregation, Sn-rich nanoparticles form and move on the surface during the deposition, which results in a rough surface owing to facet formation. The Sn-rich nanoparticles moving on the surface during the deposition absorb Sn from the periphery and yield a lower Sn content, not on the surface but within the layer, because the Sn surface segregation and the GeSn deposition occur simultaneously. Sn surface segregation can occur at a lower temperature during the deposition compared with that during postannealing. This suggests that the Sn surface segregation during the deposition is strongly promoted by the migration of deposited Ge and Sn adatoms on the surface originating from the thermal effect of substrate temperature, which also suggests that limiting the migration of deposited Ge and Sn adatoms can reduce the Sn surface segregation and improve the crystallinity of GeSn layers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Selenium semiconductor core optical fibers

Phosphate glass-clad optical fibers containing selenium (Se) semiconductor core were fabricated using a molten core method. The cores were found to be amorphous as evidenced by X-ray diffraction and corroborated by Micro-Raman spectrum. Elemental analysis across the core/clad interface suggests that there is some diffusion of about 3 wt % oxygen in the core region. Phosphate glass-clad crystalline selenium core optical fibers were obtained by a postdrawing annealing process. A two-cm-long crystalline selenium semiconductor core optical fibers, electrically contacted to external circuitry through the fiber end facets, exhibit a three times change in conductivity between dark and illuminated states. Such crystalline selenium semiconductor core optical fibers have promising utility in optical switch and photoconductivity of optical fiber array.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

We report the use of highly ordered, dense, and regular arrays of in-plane GaAs nanowires as building blocks to produce antiphase-domain-free GaAs thin films on exact (001) silicon. High quality GaAs nanowires were grown on V-grooved Si (001) substrates using the selective aspect ratio trapping concept. The 4.1% lattice mismatch has been accommodated by the initial GaAs, a few nanometer-thick with high density stacking faults. The bulk of the GaAs wires exhibited smooth facets and a low defect density. An unusual defect trapping mechanism by a “tiara”-like structure formed by Si undercuts was discovered. As a result, we were able to grow large-area antiphase-domain-free GaAs thin films out of the nanowires without using SiO{sub 2} sidewalls for defect termination. Analysis from XRD ω-rocking curves yielded full-width-at-half-maximum values of 238 and 154 arc sec from 900 to 2000 nm GaAs thin films, respectively, indicating high crystalline quality. The growth scheme in this work offers a promising path towards integrated III-V electronic, photonic, or photovoltaic devices on large scale silicon platform.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Anisotropy of electrical and magnetic transport properties of epitaxial SrRuO{sub 3} thin films

SrRuO{sub 3} (SRO) thin films with different thickness (2–70 nm) have been grown on (001), (110), and (111) SrTiO{sub 3} substrates. The (001)-SRO films (2–8 nm) exhibited smooth flat surfaces whereas the (110)- and (111)-SRO films featured a faceted island structure. Room temperature resistivity and residual resistivity are the lowest for the (111)-SRO films (30–70 nm). Over all thicknesses, we observed enhanced magnetization in the (111)-SRO films (∼4 μ{sub B}/Ru) compared with that for the (001)- and (110)-SRO films (∼2 μ{sub B}/Ru and ∼3 μ{sub B}/Ru, respectively), suggesting a low-spin state t{sub 2g}(3↑,1↓), high-spin state t{sub 2g}(3↑)e{sub g}(1↑), and mixed low- and high-spin states for the (001)-, (111)-, and (110)-SRO films, respectively. The dependence of resistivity on temperatures near T{sub C} follows a power law with exponent β = 0.312 and β = 0.363 for the (110)- and (111)-SRO films, respectively. These critical exponents are consistent with magnetic data with scaling law M = C (T{sub C} − T){sup β}. At low temperatures, dM/dT and dρ/dT show a linear relationship in the temperature range for the Fermi liquid. These results suggest that the intrinsic electrical and magnetic transport properties are coupled.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup ¯}1{sup ¯}) GaN substrates

We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup ¯}1{sup ¯}) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451 nm at room temperature, an output power of 2.52 W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34 A. The measured differential quantum efficiency was 50%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Synthesis and optical study of barium magnesium aluminate blue phosphors

Europium doped barium magnesium aluminate (BaMgAl{sub 10}O{sub 17}:Eu{sup 2+}) phosphor was prepared via solution combustion method at 550°C using urea as a fuel. Morphological and optical properties of the prepared sample was studied by X-ray diffraction (XRD), Transmission electron microscopy (TEM) and Photoluminescence spectroscopy (PL). XRD result showed the formation of pure phase BaMgAl{sub 10}O{sub 17}(JCPDS 26-0163) along with an additional phase BaAl{sub 2}O{sub 4}(JCPDS 01-082-1350). TEM image indicated the formation of faceted particles with average particle size 40 nm. From PL spectra, a broad emission band obtained at about 450 nm attributes to 4f{sup 6} 5d → 4f{sup 7} transition of Eu{sup 2+} which lies in the blue region of the visible spectrum.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Highly temperature insensitive, low threshold-current density (λ = 8.7–8.8 μm) quantum cascade lasers

By stepwise tapering, both the barrier heights and quantum-well depths in the active regions of 8.7–8.8 μm-emitting quantum-cascade-laser (QCL) structures, virtually complete carrier-leakage suppression is achieved. Such step-taper active-region-type QCLs possess, for 3 mm-long devices with high-reflectivity-coated back facets, threshold-current characteristic temperature coefficients, T{sub 0}, as high as 283 K and slope-efficiency characteristic temperature coefficients, T{sub 1}, as high as 561 K, over the 20–60 °C heatsink-temperature range. These high T{sub 0} and T{sub 1} values reflect at least a factor of four reduction in carrier-leakage current compared to conventional 8–9 μm-emitting QCLs. Room temperature, pulsed, threshold-current densities are 1.58 kA/cm{sup 2}; values comparable to those for 35-period conventional QCLs of similar injector-region doping level. Superlinear behavior of the light-current curves is shown to be the result of the onset of resonant extraction from the lower laser level at a drive level of ∼1.3× threshold. Maximum room-temperature slope efficiencies are 1.23 W/A; that is, slope efficiency per period values of 35 mW/A, which are 37%–40% higher than for same-geometry conventional 8–9 μm-emitting QCLs. Since the waveguide-loss coefficients are very similar, we estimate that the internal differential efficiency is at least 30% higher than in conventional QCLs. Such high internal differential efficiency values reflect the combined effect of nearly complete carrier-leakage suppression and high differential efficiency of the laser transition (∼90%), due to resonant extraction from the lower laser level.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Surface electronic structure of polar NiO thin film grown on Ag(111)

The growth and structure of NiO thin films on top of Ag(111) substrate were studied where the formation of faceted surface was confirmed by Low Energy Electron Diffraction. The electronic structure of polar NiO(111) surface has been probed using photoemission techniques. The core energy levels and the valence band electronic structure were excited by x-ray and ultraviolet photons respectively. The modifications in physical structure and valence band electronic structure of the film under vacuum annealing have also been enlightened.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Deposition and characterization of diamond thin films by HF-CVD method

Effect of reactor pressure and methane gas concentration on the growth of diamond films on Si (100) substrate by hot filament chemical vapor deposition (HFCVD) method has been studied in this work. Raman spectroscopy measurements of the obtained film confirmed the formation of a mixture of micro and nanocrystalline diamond by showing peaks at 1140 and 1334 cm{sup −1} wave shifts. Scanning electron microscopy results showed formation of well defined faceted diamond grains of 100–500 nm size. Average roughness of the films measured by a surface profilometer was in the range of 40–60 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

An experimental verification of a criterion for forming metastable phases in containerless solidification

On the thermodynamic condition for forming a metastable phase from undercooled melt in a containerless state, we had proposed a criterion that crystals will preferentially form if they have a smaller entropy of fusion than the entropy of fusion of equilibrium crystals (Kuribayashi et al., Mater. Sci. Eng., A 449–451, 675 (2007)). This criterion is proposed for being applied to materials that exhibit a faceted interface, such as semiconductors and oxides. However, no experimental data that support this criterion have been obtained. From this point, we used an aerodynamic levitator as a tool for forming metastable phases from undercooled melt and verified the above-mentioned criterion using LnFeO{sub 3} (Ln: lanthanide and Y) as the model material. In addition, the condition for double recalescence, which corresponds to forming metastable phases and stable phases, was discussed in terms of competitive 2D isomorphic nucleation of the metastable phase and 3D polymorphic nucleation of the stable phase.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Patch antenna terahertz photodetectors

We report on the implementation of 5 THz quantum well photodetector exploiting a patch antenna cavity array. The benefit of our plasmonic architecture on the detector performance is assessed by comparing it with detectors made using the same quantum well absorbing region, but processed into a standard 45° polished facet mesa. Our results demonstrate a clear improvement in responsivity, polarization insensitivity, and background limited performance. Peak detectivities in excess of 5 × 10{sup 12} cmHz{sup 1/2}/W have been obtained, a value comparable with that of the best cryogenic cooled bolometers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Atomistic growth phenomena of reactively sputtered RuO{sub 2} and MnO{sub 2} thin films

We have synthesized RuO{sub 2} and MnO{sub 2} thin films under identical growth conditions using reactive DC sputtering. Strikingly different morphologies, namely, the formation of RuO{sub 2} nanorods and faceted, nanocrystalline MnO{sub 2}, are observed. To identify the underlying mechanisms, we have carried out density functional theory based molecular dynamics simulations of the growth of one monolayer. Ru and O{sub 2} molecules are preferentially adsorbed at their respective RuO{sub 2} ideal surface sites. This is consistent with the close to defect free growth observed experimentally. In contrast, Mn penetrates the MnO{sub 2} surface reaching the third subsurface layer and remains at this deep interstitial site 3.10 Å below the pristine surface, resulting in atomic scale decomposition of MnO{sub 2}. Due to this atomic scale decomposition, MnO{sub 2} may have to be renucleated during growth, which is consistent with experiments.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Te-doping of self-catalyzed GaAs nanowires

Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy and high-resolution transmission electron microscopy. The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the (111)-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Light-trapping optimization in wet-etched silicon photonic crystal solar cells

We demonstrate, by numerical solution of Maxwell's equations, near-perfect solar light-trapping and absorption over the 300–1100 nm wavelength band in silicon photonic crystal (PhC) architectures, amenable to fabrication by wet-etching and requiring less than 10 μm (equivalent bulk thickness) of crystalline silicon. These PhC's consist of square lattices of inverted pyramids with sides comprised of various (111) silicon facets and pyramid center-to-center spacing in the range of 1.3–2.5 μm. For a wet-etched slab with overall height H = 10 μm and lattice constant a = 2.5 μm, we find a maximum achievable photo-current density (MAPD) of 42.5 mA/cm{sup 2}, falling not far from 43.5 mA/cm{sup 2}, corresponding to 100% solar absorption in the range of 300–1100 nm. We also demonstrate a MAPD of 37.8 mA/cm{sup 2} for a thinner silicon PhC slab of overall height H = 5 μm and lattice constant a = 1.9 μm. When H is further reduced to 3 μm, the optimal lattice constant for inverted pyramids reduces to a = 1.3 μm and provides the MAPD of 35.5 mA/cm{sup 2}. These wet-etched structures require more than double the volume of silicon, in comparison to the overall mathematically optimum PhC structure (consisting of slanted conical pores), to achieve the same degree of solar absorption. It is suggested these 3–10 μm thick structures are valuable alternatives to currently utilized 300 μm-thick textured solar cells and are suitable for large-scale fabrication by wet-etching.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Fast terahertz imaging using a quantum cascade amplifier

A terahertz (THz) imaging scheme based on the effect of self-mixing in a 2.9 THz quantum cascade (QC) amplifier has been demonstrated. By coupling an antireflective-coated silicon lens to the facet of a QC laser, with no external optical feedback, the laser mirror losses are enhanced to fully suppress lasing action, creating a THz QC amplifier. The addition of reflection from an external target to the amplifier creates enough optical feedback to initiate lasing action and the resulting emission enhances photon-assisted transport, which in turn reduces the voltage across the device. At the peak gain point, the maximum photon density coupled back leads to a prominent self-mixing effect in the QC amplifier, leading to a high sensitivity, with a signal to noise ratio up to 55 dB, along with a fast data acquisition speed of 20 000 points per second.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Cube-like Cu{sub 2}MoS{sub 4} photocatalysts for visible light-driven degradation of methyl orange

Cube-like Cu{sub 2}MoS{sub 4} nanoparticles with low-index facets and high crystallinity were fabricated via a hydrothermal method. The as-obtained nanocubes with an average size of 40-60 nm are composed of stacking-Cu{sub 2}MoS{sub 4} layers separated by a weak Van der Waals gap of 0.5 nm. A strong absorption at visible light region is observed in the nanocube aqueous solution, indicating its optical-band gap of 1.78 eV. The photocatalytic measurements reveal that the nanocubes can thoroughly induce the degradation of methyl orange under visible light irradiation with good structural stability. Our finding may provide a way in design and fabrication of transition metal dichalcogenide nanostructures for practical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The role of fluctuations in bistability and oscillations during the H{sub 2} + O{sub 2} reaction on nanosized rhodium crystals

A combined experimental and theoretical study is presented of fluctuations observed by field ion microscopy in the catalytic reaction of water production on a rhodium tip. A stochastic approach is developed to provide a comprehensive understanding of the different phenomena observed in the experiment, including burst noise manifesting itself in a bistability regime, noisy oscillations, and nanopatterns with a cross-like oxidized zone separating the surface into four quadrants centered on the (111) facets. The study is based on a stochastic model numerically simulating the processes of adsorption, desorption, reaction, and transport. The surface diffusion of hydrogen is described as a percolation process dominated by large clusters corresponding to the four quadrants. The model reproduces the observed phenomena in the ranges of temperature, pressures, and electric field of the experiment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Synthesis, characterization and magnetic properties of ultrafine Co{sub 3}O{sub 4} octahedra

Octahedral Co{sub 3}O{sub 4} nanoparticles were synthesised in an aqueous ammonia solution using hexagonal β-Co(OH){sub 2} nanoplates as starting materials. Electron microscopy analysis indicates that the Co{sub 3}O{sub 4} particles have diameters of 20-40 nm and adopt a well-crystallized cubic spinel structure. The octahedral habit was verified by high angle annular dark field imaging. High resolution electron microscopy results revealed that the long axis of the octahedral Co{sub 3}O{sub 4} nanoparticles coincides with crystallographic <111> direction and the facets are the (111) planes. Magnetization measurements reveal antiferromagnetic ordering below 10 K, with a paramagnetic Curie temperature of 3 K and a paramagnetic susceptibility that is double that expected for high-spin Co{sup 2+}. The results show that a substantial fraction of the B-site Co{sup 3+} in the nanoparticles is in a high-spin state.

36 MATERIALS SCIENCE↗