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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Anomalous reduction of the switching voltage of Bi-doped Ge{sub 0.5}Se{sub 0.5} ovonic threshold switching devices

Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge{sub 0.5}Se{sub 0.5} thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E{sub g}{sup opt}) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V{sub th}) by over 50%. In addition, E{sub g}{sup opt} was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Single- and bi-layer memristive devices with tunable properties using TiO{sub x} switching layers deposited by reactive sputtering

The authors systematically studied reactive sputtering deposition of TiO{sub x} thin films using a mixture of Ar and O{sub 2} gases under different ratios of O{sub 2} flow. As directly revealed by X-ray photoelectron spectroscopy, the deposition changed from a metallic Ti target mode to an oxide target mode when the O{sub 2} flow ratio was beyond 40%, resulting in TiO{sub x} thin films with different chemical compositions. Consequently, metal/oxide/metal devices with a single TiO{sub x} layer exhibited a broad spectrum of electrical characteristics such as Ohmic, rectifying, and memristive behavior. The reactive sputtering deposited TiO{sub x} thin films were also used in a bilayer memristive device structure, and a transition from bipolar to unipolar switching behavior was observed for devices based on thin films prepared with different oxygen flow.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Low dimension structures and devices for new generation photonic technology

Low dimensional structures and devices are the key technological building blocks for new generation of electronic and photonic technology. Such structures and devices show novel properties and can be integrated into systems for wide applications in many areas, including medical, biological and military and advancement of science. In this invited talk, I will present the main results achieved in our competitive research program which aims to explore the application of the mesoscopic structures in light source, manipulation and imaging and integrate them into advanced systems. In the light source aspect, we have for the first time developed graphene mode-locked lasers which are in the process of commercialization. Nanocrystal Si embedded in dielectrics was formed by ion implantation and subsequent annealing. Si light emitting devices with external quantum efficiency of about 2.9×10{sup −3}% for visible emission were demonstrated at room temperature and the color of emitted light can be tuned electrically from violet to white by varying the injected current. In light manipulation, loss compensation of surface plasmon polaritons (SPPs) using quantum well (QW) gain media was studied theoretically and demonstrated experimentally. The SPP propagation length was effectively elongated several times through electrical pumping. One and two microring resonators based on silicon on insulator and III-V semiconductors technologies have been successfully fabricated and they can be used as filter and switch in the photonic circuit. In imaging, both SPP and low dimension structures are investigated and resolution far beyond diffraction limit in visible range has been realized. The integration of the components in the three aspects into complicated systems is on the way.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Scaling in the quantum Hall regime of graphene Corbino devices

The scaling behavior of graphene devices in Corbino geometry was investigated through temperature dependent conductivity measurements under magnetic field. Evaluation of the Landau level width as a function of temperature yielded a relatively low temperature exponent of κ = 0.16 ± 0.05. Furthermore, an unusually large value close to 7.6 ± 0.9 was found for the universal scaling constant γ, while the determined inelastic scattering exponent of p = 2 is consistent with established scattering mechanisms in graphene. The deviation of the scaling parameters from values characteristic of conventional two-dimensional electron gases is attributed to an inhomogeneous charge carrier distribution in the Corbino devices. Direct evidence for the presence of the latter could be gained by spatially resolved photocurrent microscopy away from the charge neutrality point of the devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhancing the stability of microplasma device utilizing diamond coated carbon nanotubes as cathode materials

This paper reports the enhanced stability of a microplasma device by using hybrid-granular-structured diamond (HiD) film coated carbon nanotubes (CNTs) as cathode, which overcomes the drawback of short life time in the CNTs-based one. The microplasma device can be operated more than 210 min without showing any sign of degradation, whereas the CNTs-based one can last only 50 min. Besides the high robustness against the Ar-ion bombardment, the HiD/CNTs material also possesses superior electron field emission properties with low turn-on field of 3.2 V/μm, which is considered as the prime factor for the improved plasma illumination performance of the devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Cu(In,Ga)Se{sub 2} absorber thinning and the homo-interface model: Influence of Mo back contact and 3-stage process on device characteristics

Thinning the absorber layer is one of the possibilities envisaged to further decrease the production costs of Cu(In,Ga)Se{sub 2} (CIGSe) thin films solar cell technology. In the present study, the electronic transport in submicron CIGSe-based devices has been investigated and compared to that of standard devices. It is observed that when the absorber is around 0.5 μm-thick, tunnelling enhanced interface recombination dominates, which harms cells energy conversion efficiency. It is also shown that by varying either the properties of the Mo back contact or the characteristics of 3-stage growth processing, one can shift the dominating recombination mechanism from interface to space charge region and thereby improve the cells efficiency. Discussions on these experimental facts led to the conclusions that 3-stage process implies the formation of a CIGSe/CIGSe homo-interface, whose location as well as properties rule the device operation; its influence is enhanced in submicron CIGSe based solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Towards reproducible, scalable lateral molecular electronic devices

An approach to reproducibly fabricate molecular electronic devices is presented. Lateral nanometer-scale gaps with high yield are formed in Au/Pd nanowires by a combination of electromigration and Joule-heating-induced thermomechanical stress. The resulting nanogap devices are used to measure the electrical properties of small numbers of two different molecular species with different end-groups, namely 1,4-butane dithiol and 1,5-diamino-2-methylpentane. Fluctuations in the current reveal that in the case of the dithiol molecule devices, individual molecules conduct intermittently, with the fluctuations becoming more pronounced at larger biases.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Low-temperature phase transitions in a soluble oligoacene and their effect on device performance and stability

The use of organic semiconductors in high-performance organic field-effect transistors requires a thorough understanding of the effects that processing conditions, thermal, and bias-stress history have on device operation. Here, we evaluate the temperature dependence of the electrical properties of transistors fabricated with 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene, a material that has attracted much attention recently due to its exceptional electrical properties. We have discovered a phase transition at T = 205 K and discuss its implications on device performance and stability. We examined the impact of this low-temperature phase transition on the thermodynamic, electrical, and structural properties of both single crystals and thin films of this material. Our results show that while the changes to the crystal structure are reversible, the induced thermal stress yields irreversible degradation of the devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Glow discharge based device for solving mazes

A glow discharge based device for solving mazes has been designed and tested. The device consists of a gas discharge chamber and maze-transformer of radial-azimuth type. It allows changing of the maze pattern in a short period of time (within several minutes). The device has been tested with low pressure air. Once switched on, a glow discharge has been shown to find the shortest way through the maze from the very first attempt, even if there is a section with potential barrier for electrons on the way. It has been found that ionization waves (striations) can be excited in the maze along the length of the plasma channel. The dependancy of discharge voltage on the length of the optimal path through the maze has been measured. A reduction in discharge voltage with one or two potential barriers present has been found and explained. The dependency of the magnitude of discharge ignition voltage on the length of the optimal path through the maze has been measured. The reduction of the ignition voltage with the presence of one or two potential barriers has been observed and explained.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Graphene field emission devices

Graphene field emission devices are fabricated using a scalable process. The field enhancement factors, determined from the Fowler-Nordheim plots, are within few hundreds and match the theoretical predictions. The devices show high emission current density of ∼10 nA μm{sup −1} at modest voltages of tens of volts. The emission is stable with time and repeatable over long term, whereas the noise in the emission current is comparable to that from individual carbon nanotubes emitting under similar conditions. We demonstrate a power law dependence of emission current on pressure which can be utilized for sensing. The excellent characteristics and relative ease of making the devices promise their great potential for sensing and electronic applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Design of 4-electrode optical device for application of vector electric fields to self-assembled quantum dot complexes

Self-assembled InAs quantum dots (QDs) are of great interest as components of optoelectronic devices that can operate at the quantum limit. The charge configuration, interdot coupling, and symmetry of complexes containing multiple QDs can all be tuned with applied electric fields, but the magnitude and angle of the electric field required to control each of these parameters depend on the orientation of the QD complex. We present a 4-electrode device compatible with optical excitation and emission that allows application of electric fields with arbitrary magnitudes and angles relative to isolated QD complexes. We demonstrate the electric field tunability of this device with numerical simulations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Ex post manipulation of barriers in InGaAs tunnel injection devices

Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

The role of the hole-extraction layer in determining the operational stability of a polycarbazole:fullerene bulk-heterojunction photovoltaic device

We have made a comparative study of the relative operational stability of bulk-heterojunction organic photovoltaic (OPV) devices utilising different hole transport layers (HTLs). OPV devices were fabricated based on a blend of the polymer PCDTBT with the fullerene PC{sub 70}BM, and incorporated the different HTL materials PEDOT:PSS, MoO{sub x} and V{sub 2}O{sub 5}. Following 620 h of irradiation by light from a solar simulator, we find that devices using the PEDOT:PSS HTL retained the highest efficiency, having a projected T{sub 80} lifetime of 14 500 h.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Outstanding field emission properties of wet-processed titanium dioxide coated carbon nanotube based field emission devices

Field emission devices using a wet-processed composite cathode of carbon nanotube films coated with titanium dioxide exhibit outstanding field emission characteristics, including ultralow turn on field of 0.383 V μm{sup −1} and threshold field of 0.657 V μm{sup −1} corresponding with a very high field enhancement factor of 20 000, exceptional current stability, and excellent emission uniformity. The improved field emission properties are attributed to the enhanced edge effect simultaneously with the reduced screening effect, and the lowered work function of the composite cathode. In addition, the highly stable electron emission is found due to the presence of titanium dioxide nanoparticles on the carbon nanotubes, which prohibits the cathode from the influence of ions and free radical created in the emission process as well as residual oxygen gas in the device. The high-performance solution-processed composite cathode demonstrates great potential application in vacuum electronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Measuring charge carrier mobility in photovoltaic devices with micron-scale resolution

We present a charge-extraction technique, micron-scale charge extraction by linearly increasing voltage, which enables simultaneous spatially resolved measurements of charge carrier mobility and photocurrent in thin-film photovoltaic devices with micron-scale resolution. An intensity-modulated laser with beam diameter near the optical diffraction limit is scanned over the device, while a linear voltage ramp in reverse bias is applied at each position of illumination. We calculate the majority carrier mobility, photocurrent, and number of photogenerated charge carriers from the resulting current transient. We demonstrate this technique on an organic photovoltaic device, but it is applicable to a wide range of photovoltaic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗