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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Ultrasonication-assisted trace amount solvent synthesis of Cs 4 PbBr 6 crystal with ultra-bright green light emission

Cs 4 PbBr 6 crystals have been synthesized by an ultrasonication-assisted trace amount polar solvent method. The prepared green Cs 4 PbBr 6 material was found to have high photoluminescence (PL) brightness and 10 ns PL lifetime. The prepared green light emitting device can achieve the maximum brightness of 3.8 × 10 9 cd/m 2 , which is nearly 100 times higher than a wick. The white light emitting device based on Cs 4 PbBr 6 crystals has better performance than commercial products, which can cover 32.3% of the color gamut and achieves 107.3% coverage for International Commission on Illumination (CIE)1931 and 84.8% coverage for CIE1976.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Local structure study on magnetostrictive material Tb 1–x Dy x Fe 2

Tb 1–x Dy x Fe 2 system has attracted more research interest due to the large magnetostrictive effect. The crystal structures and physical properties have been well studied, but research studies on their local structures are still rare. As such, in this work, the local structure of Tb 1–x Dy x Fe 2 samples was studied using the pair distribution function and x-ray absorption spectroscopy techniques. The results demonstrate that the system owns the same local crystal symmetry with its average structure in the ferromagnetic phase, and the crystal lattice of the system is more ordered with increasing Dy content, indicating that the Dy-rich tetragonal phase is more stable than the Tb-rich rhombohedral phase. The different roles of metallic bonds in affecting the crystal lattice are presented. The weak Fe 1 –Fe 2 bonds influenced by the local environment such as local stress from randomly distributed nanodomains could originate the anomalies in the lattice, resulting in the more ordered and stable Dy-rich phase than the Tb-rich phase.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Spin susceptibility, upper critical field, and disorder effect in $j = \frac{3}{2}$ superconductors with singlet–quintet mixing

Recently, a new pairing state with the mixing between the s-wave singlet channel and the isotropic d-wave quintet channel induced by centrosymmetric spin–orbit coupling has been theoretically proposed in the superconducting materials with $j = \frac{3}{2}$ electrons [J. Yu and C.-X. Liu, Phys. Rev. B 98, 104514 (2018)]. In this article, we derive the expressions of the zero-temperature spin susceptibility, the upper critical field close to the zero-field critical temperature T c , and the critical temperature with weak random non-magnetic disorders for the singlet–quintet mixed state based on the Luttinger model. Our study reveals the following features of the singlet–quintet mixing. (1) The zero-temperature spin susceptibility remains zero for the singlet–quintet mixed state if only the centrosymmetric spin–orbit coupling is taken into account and deviates from zero when the non-centrosymmetric spin–orbit coupling is introduced. (2) The singlet–quintet mixing can help enhance the upper critical field roughly because it can increase T c . (3) Although the quintet channel is generally suppressed by the non-magnetic disorder scattering, we find the strong mixing between singlet and quintet channels can help to stabilize the quintet channel. As a result, we still find a sizable quintet component mixed into the singlet channel in the presence of weak random non-magnetic disorders. Our work provides the guidance for future experiments on spin susceptibility and upper critical field of the singlet–quintet mixed superconducting states and illustrates the stability of the singlet–quintet mixing against the weak random non-magnetic disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

An ultra-incompressible Mn3N compound predicted by first-principles genetic algorithm

Using genetic algorithms for an unbiased structure search and first-principles total-energy calculations, a stable manganese nitride, Mn3N, is discovered. Mn3N is a nonmagnetic metal and isostructural to superhard Re3N. Mn3N exhibits a large bulk modulus and incompressibility comparable to that of the ultra-incompressible OsB. We show that the large bulk modulus can be attributed to the strong covalent bonding in this system. Phonon calculations and analysis confirm the dynamical stability of the Mn3N compound. We also show that weak electron–phonon coupling leads to a small superconducting transition temperature for Mn3N.

Zhang, Chao (ORCID:0000000259572287)↗
DOE OSTI2020

Atomic imprinting in the absence of an intrinsic length scale

Bulk metallic glasses (BMGs) have successfully been used to replicate molds that are structured at the nano- and even atomic scale through thermoplastic forming (TPF), an ability that was speculated to be rooted in the glass’ featureless atomic structure. These previous demonstrations of atomically precise imprinting, however, were performed under conditions where mold atomic feature dimensions coincided with the unit cell size of constituents in the BMG. In order to evaluate if accurate atomic-scale replication is possible in general, i.e., independent of the accidental presence of favorable constituent size/feature size relationships, we have used Pt 57.5 Cu 14.7 Ni 5.3 P 22.5 to replicate three different crystalline facets of LaAlO 3 single crystals, each exposing distinct atomic step heights. We find that in all cases, the terraced surface termination can be copied with remarkable fidelity, corroborating that BMGs when thermoplastic formed are capable of adapting to any externally imposed confinement with sub-angstrom precision without being limited by factors related to the specifics of their internal structure. This unprecedented capability of quasi-limitless replication fidelity reveals that the deformation mechanism in the supercooled liquid state of BMGs is essentially homogeneous and suggests TPF of BMGs to be a versatile toolbox for atomic and precision nanoscale imprinting.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells

Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocations and V-defects does not play a decisive role in the overall nonradiative recombination and internal quantum efficiency of polar InGaN/GaN QWs.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Topology-dependent stability of vortex-antivortex structures

The non-trivial topology of magnetic structures such as vortices and skyrmions is considered as a key concept to explain the stability of those structures. The stability, dictated by non-trivial topology, provides great potential for device applications. Although it is a very critical scientific and technological issue, it is elusive to experimentally study the topology-dependent stability owing to the difficulties in establishing stably formed magnetic structures with different topologies. Here, we establish a platform for vortex-antivortex structures with different topological charges within Ni 80 Fe 20 rectangular elements thick enough to stabilize a unique three-dimensional magnetic structure with non-uniform magnetization along the thickness of the elements. The detailed magnetization configurations of the three-dimensional vortex-antivortex structures and their annihilations during their field-driven motions are investigated by utilizing magnetic transmission soft x-ray microscopy and micromagnetic simulation. We demonstrate that the stability of vortex-antivortex structures significantly depends on their topologies and the topology-dependent stability is associated with their different annihilation mechanisms. Furthermore, we believe that this work provides in-depth insight into the stability of magnetic structures and its topology dependence.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Hole formation effect on surface morphological response of plasma-facing tungsten

We report simulation results on the effect of helium (He) bubble bursting-mediated surface hole formation on the surface morphological response of tungsten plasma-facing components (PFCs) in nuclear fusion devices. Our analysis is based on an atomistically informed, continuum-scale model, which is capable of accessing the spatiotemporal scales relevant to the fuzz nanostructure formation process on the surface of PFC tungsten. Our simulations account, in an empirical fashion, for two types of subsurface bubble dynamical phenomena in the nanobubble region of PFC tungsten during He plasma irradiation, involving bubble bursting and surface crater formation. We demonstrate that the hole formation effect on the PFC tungsten surface accelerates the growth rate of nanotendrils and the onset of fuzz formation. As a result, the predicted incubation time for surface nanotendril growth is shortened, in agreement with experimental data of incubation fluence at comparable plasma exposure conditions. We also explore systematically the dependence of the PFC surface morphological response on the areal density of holes introduced at regular time intervals onto the He-implanted tungsten surface, a parameter in our analysis that serves as a proxy for the rate of He bubble bursting. More importantly, our simulations capture fine surface features in the PFC tungsten surface morphology and predict that the average spacing between nanotendrils is on the order of 100 nm, consistent with the experimental findings.

Chen, Chao-Shou (ORCID:0000000307910042)↗
DOE OSTI2021

Excitons: Energetics and spatiotemporal dynamics

The concept of an exciton as a quasiparticle that represents collective excited states was originally adapted from solid-state physics and has been successfully applied to molecular aggregates by relying on the well-established limits of the Wannier exciton and the Frenkel exciton. However, the study of excitons in more complex chemical systems and solid materials over the past two decades has made it clear that simple concepts based on Wannier or Frenkel excitons are not sufficient to describe detailed excitonic behavior, especially in nano-structured solid materials, multichromophoric macromolecules, and complex molecular aggregates. In addition, important effects such as vibronic coupling, the influence of charge-transfer (CT) components, spin-state interconversion, and electronic correlation, which had long been studied but not fully understood, have turned out to play a central role in many systems. This has motivated new experimental approaches and theoretical studies of increasing sophistication. This article provides an overview of works addressing these issues that were published for A Special Topic of the Journal of Chemical Physics on ``Excitons: Energetics and spatio-temporal dynamics" and discusses their implications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Resonance three-wave interactions and strange attractor

We report it is shown that the incorporation of linear sink/source terms in the three-wave resonance interaction model results in the time dependence of the wave amplitudes, which could exhibit the properties of a strange attractor. This finding demonstrates that the transition to turbulent dynamics of the waves could be related not only to the coupling of wave triads but also to the establishing of the strange attractor-like dynamics within individual wave triads.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Design and testing of a high perveance sheet beam electron gun

This paper presents the design, prototype engineering, and initial testing of a relatively low-voltage, high aspect ratio electron gun for versatile pulsed power applications. The sheet beam, diode electron gun is designed for (23–25) kV voltage and 6 µA/V1.5, as is required for x-band klystron, as a part of a compact Klylac delivering electron beam energy in the MeV range. The gun prototype was engineered, built, and tested using a Scandinova M1-0.5 modulator. Beam loss on the anode aperture is evaluated from transient waveforms and equivalent circuit modeling.

Instruments & Instrumentation↗
DOE OSTI2022

Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells

We demonstrate room-temperature stimulated emission at 568 nm from low dislocation density InGaN/GaN multi-quantum wells. For a 1.4 mm long and a 50 $μ$4m wide ridge bar optically pumped by a high-power pulsed laser, we observed an emission peak at 568 nm with a narrow spectral width of less than 2 nm at room temperature. The measured pumping threshold is less than 1.5 MW/cm 2 , and the polarization ratio of the emission is over 90%. In conclusion, this demonstration paves the way for the future development of electrically injected InGaN semiconductor yellow laser diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Pit rim decomposition into multiple quantum dots on surfaces of epitaxial thin films grown on pit-patterned substrates

Here, we report results of dynamical simulations according to an experimentally validated surface morphological evolution model on the formation of regular arrays of quantum dot molecules (QDMs) consisting of 1D arrays of smaller interacting quantum dots (QDs). These QD arrays form along the sides of each pit rim on the surface of a coherently strained thin film epitaxially deposited on a semiconductor substrate, the surface of which consists of a periodic pattern of inverted prismatic pits with rectangular pit openings. We find that this complex QDM pattern results from the decomposition of the pit rim from a “quantum fortress” with four elongated QDs into four 1D arrays of multiple smaller QDs arranged along each side of the pit rim. Systematic parametric analysis indicates that varying the pit opening dimensions and the pit wall inclination directly impacts the number of QDs in the resulting QDM pattern, while varying the pit depth only affects the dimensions of the QDs in the nanostructure pattern. Therefore, the number, arrangement, and sizes of QDs in the resulting pattern of QDMs on the film surface can be engineered precisely by proper tuning of the pit design parameters. Our simulation results are supported by predictions of morphological stability analysis, which explains the pit rim decomposition into multiple QDs as the outcome of a tip-splitting instability and provides a fundamental characterization of the post-instability nanostructure pattern. Our theoretical findings can play a vital role in designing optimal semiconductor surface patterns toward enabling future nanofabrication technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Impact of doped barriers on the recombination coefficients of c -plane InGaN/GaN single quantum well light-emitting diodes

Differential carrier lifetime measurements were performed on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different QW indium compositions as well as with and without doped barriers. Mg-doped p-type and Si-doped n-type barriers close to the QW were used to reduce the net internal electric field in the QW, thereby improving the electron–hole wavefunction overlap on the LEDs. LEDs with doped barriers show short lifetimes and low carrier densities in the active region compared to the reference LEDs. The recombination coefficients in the ABC model were estimated based on the carrier lifetime and quantum efficiency measurements. The improvement in the radiative coefficients in the LEDs with doped barriers coupled with the blueshift of the emission wavelengths indeed indicates an enhancement in wavefunction overlap and a reduction of quantum confined Stark effect as a result of the reduced internal electric field. However, doped barriers also introduce non-radiative recombination centers and thereby increase the Shockley–Read–Hall (SRH) coefficient, although the increment is less for LEDs with high indium composition QWs. As a result, at high indium composition (22%), LEDs with doped barriers outperform the reference LEDs even though the trend is reversed for LEDs with lower indium composition (13.5%). In conclusion, despite the trade-off of higher SRH coefficients, doped barriers are shown to be effective in reducing the internal electric field and increasing the recombination coefficients.

42 ENGINEERING↗
DOE OSTI2023

SLAC microresonator RF(SMuRF) electronics: A tone-tracking readout system for superconducting microwave resonator arrays

Here, we describe the newest generation of the SLAC Microresonator RF (SMuRF) electronics, a warm digital control and readout system for microwave-frequency resonator-based cryogenic detector and multiplexer systems, such as microwave superconducting quantum interference device multiplexers (μmux) or microwave kinetic inductance detectors. Ultra-sensitive measurements in particle physics and astronomy increasingly rely on large arrays of cryogenic sensors, which in turn necessitate highly multiplexed readout and accompanying room-temperature electronics. Microwave-frequency resonators are a popular tool for cryogenic multiplexing, with the potential to multiplex thousands of detector channels on one readout line. The SMuRF system provides the capability for reading out up to 3328 channels across a 4–8 GHz bandwidth. Notably, the SMuRF system is unique in its implementation of a closed-loop tone-tracking algorithm that minimizes RF power transmitted to the cold amplifier, substantially relaxing system linearity requirements and effective noise from intermodulation products. Here, we present a description of the hardware, firmware, and software systems of the SMuRF electronics, comparing achieved performance with science-driven design requirements. In particular, we focus on the case of large-channel-count, low-bandwidth applications, but the system has been easily reconfigured for high-bandwidth applications. The system described here has been successfully deployed in lab settings and field sites around the world and is baselined for use on upcoming large-scale observatories.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Low-efficiency-droop c -plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers

Efficiency droop at high current densities is a problem for InGaN-based light-emitting diodes (LEDs), especially for conventional c-plane devices. The large internal electric fields in c-plane quantum wells (QWs) lead to an increase in the active region carrier density (n), causing the electrical efficiency droop onset to occur at low current densities. Here, we present an approach to reduce the internal electric fields (Eint) in c-plane QWs by placing doped p-type and n-type GaN barriers close to the QW. The reduced Eint also allows a thick QW active region design, which helps to lower n to further reduce the droop. The concept of using doped barriers to control Eint is explained using theory and device simulations. Following that, multiple series of thick single QW (SQW) LEDs were grown and characterized. Key parameters in the epitaxial design such as the doping levels and the relative position of the doped barriers were systematically studied and optimized. In conclusion, by using optimized doped barriers and a thick SQW, c-plane LEDs with a low-efficiency droop of 14% at 300 A/cm2 [with respect to the peak external quantum efficiency (EQE)] and a high peak EQE of 49% were demonstrated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗