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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Thickness controlled sol-gel silica films for plasmonic bio-sensing devices

Plasmonics has recently received considerable interest due to its potentiality in many fields as well as in nanobio-technology applications. In this regard, various strategies are required for modifying the surfaces of plasmonic nanostructures and to control their optical properties in view of interesting application such as bio-sensing, We report a simple method for depositing silica layers of controlled thickness on planar plasmonic structures. Tetraethoxysilane (TEOS) was used as silica precursor. The control of the silica layer thickness was obtained by optimizing the sol-gel method and dip-coating technique, in particular by properly tuning different parameters such as pH, solvent concentration, and withdrawal speed. The resulting films were characterized via atomic force microscopy (AFM), Fourier-transform (FT) spectroscopy, and spectroscopic ellipsometry (SE). Furthermore, by performing the analysis of surface plasmon resonances before and after the coating of the nanostructures, it was observed that the position of the resonance structures could be properly shifted by finely controlling the silica layer thickness. The effect of silica coating was assessed also in view of sensing applications, due to important advantages, such as surface protection of the plasmonic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Generation of silicon nanocrystals by damage free continuous wave laser annealing of substrate-bound SiO{sub x} films

Silicon nanocrystals have been generated by laser induced phase separation in SiO{sub x} films. A continuous wave laser emitting at 405 nm is focused to a 6 μm diameter spot on 530 nm thick SiO{sub x} films deposited on fused silica substrates. Irradiation of lines is accomplished by focus scanning. The samples are investigated by atomic force microscopy, TEM, Raman spectroscopy, and photoluminescence measurements. At a laser power of 35 mW corresponding to an irradiance of about 1.2 × 10{sup 5 }W/cm{sup 2}, the formation of Si-nanocrystals in the film without any deterioration of the surface is observed. At higher laser power, the central irradiated region is oxidized to SiO{sub 2} and exhibits some porous character, while the surface remains optically smooth, and nanocrystals are observed beside and beneath this oxidized region. Amorphous Si-nanoclusters are formed at lower laser power and around the lines written at high power.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

The influence of potassium on the growth of ultra-thin films of para-hexaphenyl on muscovite mica(001)

The interaction of potassium with mica(001) and its influence on the subsequent film growth of para-hexaphenyl (6P) was studied by Auger electron spectroscopy, thermal desorption spectroscopy, and atomic force microscopy (AFM). Freshly cleaved mica is covered with 0.5 monolayer (ML) of potassium. By intentional potassium deposition in ultra-high vacuum a saturation of 1 ML can be achieved, which is stable up to 1000 K. Additional potassium desorbs at around 350 K. The film morphology of 6P on mica(001) is significantly influenced by the potassium monolayer. On the freshly cleaved mica surface, which contains 1/2 ML of K, 6P forms needle-like islands which are composed of lying molecules. On the fully potassium covered mica surface 6P grows in form of dendritic islands, composed of standing molecules. The reason for this change is attributed to the removal of lateral electric fields which exist on the freshly cleaved mica surface, due to the specific arrangements of the atoms in the surface near region of mica.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices

Highlights: {yields} GaN films are deposited on diamond substrates by ECR-PEMOCVD. {yields} Influence of deposition temperature on the properties of samples is investigated. {yields} Properties of GaN films are dependent on the deposition temperature. -- Abstract: GaN films with highly c-axis preferred orientation are deposited on free-standing thick diamond films by low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N{sub 2} are applied as precursors of Ga and N, respectively. The quality of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction (XRD) analysis, Hall Effect measurement (HL), room temperature photoluminescence (PL) and atomic force microscopy (AFM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 {sup o}C, and the room temperature PL spectra of the optimized GaN film show a intense ultraviolet near band edge emission and a weak yellow luminescence. The obtained GaN/diamond structure has great potential for the development of high-power semiconductor devices due to its excellent heat dissipation nature.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Nanoscale Mass Spectrometry Multimodal Imaging via Tip-Enhanced Photothermal Desorption

Materials ranging from adhesives, pharmaceuticals, lubricants, and personal care products are traditionally studied using macroscopic characterization techniques. However, their functionality is in reality defined by details of chemical organization on often noncrystalline matter with characteristic length scales on the order of microns to nanometers. Additionally, these materials are traditionally difficult to analyze using standard vacuum-based approaches that provide nanoscale chemical characterization due to their volatile and beam-sensitive nature. Therefore, approaches that operate under ambient conditions need to be developed that allow probing of nanoscale chemical phenomena and correlated functionality. Here, we demonstrate a tool for probing and visualizing local chemical environments and correlating them to material structure and functionality using advanced multimodal chemical imaging on a combined atomic force microscopy (AFM) and mass spectrometry (MS) system using tip-enhanced photothermal desorption with atmospheric pressure chemical ionization (APCI). We demonstrate enhanced performance metrics of the technique for correlated imaging and point sampling and illustrate the applicability for the analysis of trace chemicals on a human hair, additives in adhesives on paper, and pharmaceuticals samples notoriously difficult to analyze in a vacuum environment. Overall, this approach of correlating local chemical environments to structure and functionality is key to advancing research in many fields ranging from biology, to medicine, to material science.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Single-layer MoS{sub 2} roughness and sliding friction quenching by interaction with atomically flat substrates

We experimentally study the surface roughness and the lateral friction force in single-layer MoS{sub 2} crystals deposited on different substrates: SiO{sub 2}, mica, and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy. We find a strong dependence of the MoS{sub 2} roughness on the underlying substrate material, being h-BN the substrate which better preserves the flatness of the MoS{sub 2} crystal. The lateral friction also lowers as the roughness decreases, and attains its lowest value for MoS{sub 2} flakes on h-BN substrates. However, it is still higher than for the surface of a bulk MoS{sub 2} crystal, which we attribute to the deformation of the flake due to competing tip-to-flake and flake-to-substrate interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Thermoelectric properties of CuS/Ag{sub 2}S nanocomposites synthesed by modified polyol method

This is the report on successful synthesis of Ag doped CuS nanostructures by modified polyol method. The resulting samples were characterized by powder X-ray diffraction (XRD), energy dispersive X-ray (EDX), atomic force microscopy (AFM) and dynamic light scattering (DLS). Particle size of pure CuS nanoparticles (NPs) was 17 nm, 38 nm and 97 nm as determined from Scherrer formula, AFM and DLS, respectively. Introduction of Ag led to formation of CuS/Ag{sub 2}S composites. A transition at 55 K in thermopower is ascribed to structural transformation from hexagonal to orthorhombic structure. Further, their thermoelectric properties exhibit remarkable change owing to Ag doping in CuS nanostructures. The power factor improves with increasing Ag content. They reveal that CuS/Ag{sub 2}S nanocomposites are some of the potential candidates for generation of thermoelectricity in future.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Epitaxial stabilization of ultra thin films of high entropy perovskite

High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La 0.2 Pr 0.2 Nd 0.2 Sm 0.2 Eu 0.2 )NiO 3 ] thin films on NdGaO 3 substrates by pulsed laser deposition. The combined characterizations with in situ reflection high energy electron diffraction, atomic force microscopy, and x-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive x-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO 3 . Furthermore, since both these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of A-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Reinforcing multiwall carbon nanotubes by electron beam irradiation

We study the effect of electron beam irradiation on the bending modulus of multiwall carbon nanotubes grown by chemical vapor deposition. Atomic force microscopy observations of the nanotube deflection in the suspended-beam geometry suggest an internal, reversible stick-slip motion prior to irradiation, indicating presence of extended defects. Upon electron beam irradiation, nanotubes with an initial bending modulus exceeding 10 GPa initially get stiffer, before softening at high doses. Highly defective nanotubes with smaller initial bending moduli do not exhibit the initial reinforcement. These data are explained by ab initio molecular dynamics calculations suggesting a spontaneous cross-linking of neighboring nanotube walls at extended vacancy defects created by the electron beam, in agreement with electron microscopy observations. At low defect concentration, depending on the edge morphology, the covalent bonds between neighboring nanotube walls cause reinforcement by resisting relative motion of neighboring walls. At high concentration of defects that are present initially or induced by high electron beam dose, the structural integrity of the entire system suffers from increasing electron beam damage.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Structural and optical characterization of Si{sub x}Ge{sub 1-x-y}Sn{sub y} alloys grown by molecular beam epitaxy

Si{sub x}Ge{sub 1-x-y}Sn{sub y} alloys were grown by molecular beam epitaxy at low temperature, followed by ex-situ annealing. The crystal quality of Si{sub x}Ge{sub 1-x-y}Sn{sub y} layers was characterized by atomic force microscopy and transmission electron microscopy. The compositions and lattice constants of the alloys were studied by x-ray photoelectron spectroscopy and x-ray diffraction. The results show that Vegard's law is a good approximation for Si{sub x}Ge{sub 1-x-y}Sn{sub y} alloys. Photoreflectance spectroscopy at room temperature was used to determine the direct bandgap energy of Si{sub x}Ge{sub 1-x-y}Sn{sub y} layers. Analyzing the relationship between composition and direct bandgap energy reveals a negative energy bowing parameter for SiSn.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Detailed investigation of the influence of the process parameters on the nano-morphology of Ag deposited on SiC by radio-frequency sputtering

In this work, a detailed study of the influence of the synthesis parameters (deposition time t and emission current I) on the morphological properties of Ag nanoparticles sputter-deposited on silicon carbide is carried out. Using the atomic force microscopy technique, we analyzed the evolution of several structural characteristics as a function both of t and I: the length and width of the Ag nanoparticles, the number of nanoparticles per unit area, the nanoparticles' fraction of the covered area, and the roughness of the resulting Ag film. Using consolidated theoretical frameworks and fitting approaches, the relations between such quantities and the process parameters t and I were established. In particular, the application of the interrupted coalescence model allowed us to evaluate the critical mean island diameter for the partial coalescence process; the dynamic scaling theories of growing interfaces lead, instead, to the determination of the dynamic scaling, growth, and roughness exponents (the values of which suggest a conservative growth process of the islands in which the atomic surface diffusion plays a key role). Finally, the Avrami approach to the study of the evolution of the fraction of area covered by the Ag islands allowed us to evaluate the Avrami exponent.

36 MATERIALS SCIENCE↗
DOE OSTI2023

van der Waals Epitaxy, Superlubricity, and Polarization of the 2D Ferroelectric SnS

Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here, in this study, we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process. Lattice matching is observed between the SnS($100$) and hBN{$1\bar{10}$} planes, with no evidence of strain. Atomic force microscopy reveals superlubricity along the commensurate direction of the SnS/hBN interface, and first-principles calculations suggest that friction is controlled by the edges of the SnS islands, rather than interface interactions. Differential phase contrast imaging detects remnant polarization in SnS islands with domains that are not dictated by step-edges in the SnS. The growth of ferroelectric SnS on high quality hBN substrates is a promising step toward electrically switchable ferroelectric semiconducting devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Temperature Dependent Capacitance-Voltage And Deep Level Transient Spectroscopy Study Of Self-Assembled Ge Quantum Dots Embedded In P-type Silicon

Temperature dependent Capacitance-Voltage (TCV) and Deep Level Transient Spectroscopy (DLTS) techniques were used to study how Ge Quantum Dots (QDs) embedded in Silicon trap charge. Atomic Force Microscopy (AFM) is used to obtain the density of QDs, which is in the order of 3x10{sup 11} cm{sup -2}. Three shallow levels, with activation energies of 40, 65 and 90 meV, and densities around 10{sup 16} cm{sup -3}, are found and are related to Boron. Four deep levels, with activation energies of 110, 150, 330 and 380 meV, and densities between 2x10{sup 15} cm{sup -3} and 5x10{sup 15} cm{sup -3}, are also found. TCV results suggest they are related to the Ge QDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effect of Dy/Nd double layer on coercivity in Nd-Fe-B thin films

The Nd-Fe-B (t{sub NFB} = 30 nm)/[Dy (t{sub Dy} nm)/Nd (t{sub Nd} nm)] (t{sub Dy/Nd} = 20 nm) (thickness t{sub Dy} = 0–10 nm) thin films were deposited on Al{sub 2}O{sub 3}(0001) substrate and subsequently in-situ annealed at 470 °C. As-deposited Nd-Fe-B thin films with a highly perpendicular orientation of c-axis were deposited by introducing bcc-Mo(111) single crystal buffer layer. After post-annealing, the grain size of the Nd-Fe-B/Dy/Nd thin films with the t{sub Dy} = 10 nm and t{sub Nd} = 10 nm becomes large due to the Dy and the Nd atoms thermal diffusion, while DyFe{sub 2} and Dy oxide compounds are formed in Nd-Fe-B layers, which is confirmed by means of a combination of atomic force microscopy observation and X-ray diffraction measurement. The H{sub c} of Nd-Fe-B/Dy/Nd thin films with the t{sub Dy} = 10 nm and t{sub Nd} = 10 nm was approximately the same value of the Nd-Fe-B thin films without Dy/Nd double layer annealed at 470 °C. On the other hand, H{sub c} is enhanced to be about 22.1 kOe in the annealed Nd-Fe-B/Dy/Nd films with the t{sub Dy} = 0.8 nm and t{sub Nd} = 19.2 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Adhesion and degradation of organic and hybrid organic-inorganic light-emitting devices

This paper presents the results of a combined analytical, computational, and experimental study of adhesion and degradation of Organic Light Emitting Devices (OLEDs). The adhesion between layers that are relevant to OLEDs is studied using an atomic force microscopy technique. The interfacial failure mechanisms associated with blister formation in OLEDs and those due to the addition of TiO{sub 2} nanoparticles into the active regions are then elucidated using a combination of fracture mechanics, finite element modeling and experiments. The blisters observed in the models are shown to be consistent with the results from adhesion, interfacial fracture mechanics models, and prior reports of diffusion-assisted phenomena. The implications of the work are then discussed for the design of OLED structures with improved lifetimes and robustness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Study on copper phthalocyanine and perylene-based ambipolar organic light-emitting field-effect transistors produced using neutral beam deposition method

The neutral cluster beam deposition (NCBD) method has been applied to the production and characterization of ambipolar, heterojunction-based organic light-emitting field-effect transistors (OLEFETs) with a top-contact, multi-digitated, long-channel geometry. Organic thin films of n-type N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and p-type copper phthalocyanine were successively deposited on the hydroxyl-free polymethyl-methacrylate (PMMA)-coated SiO{sub 2} dielectrics using the NCBD method. Characterization of the morphological and structural properties of the organic active layers was performed using atomic force microscopy and X-ray diffraction. Various device parameters such as hole- and electron-carrier mobilities, threshold voltages, and electroluminescence (EL) were derived from the fits of the observed current-voltage and current-voltage-light emission characteristics of OLEFETs. The OLEFETs demonstrated good field-effect characteristics, well-balanced ambipolarity, and substantial EL under ambient conditions. The device performance, which is strongly correlated with the surface morphology and the structural properties of the organic active layers, is discussed along with the operating conduction mechanism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2010

Polarization-modulated rectification at ferroelectric surfaces.

By correlating room temperature conductive atomic force microscopy with low temperature electrostatic force microscopy images of the same sample region, we demonstrate that nanoscale electric conduction between a sharp tip and the surface of ferroelectric HoMnO{sub 3} is intrinsically modulated by the polarization of ferroelectric domains. Conductance spectra reveal that the electric conduction is described by polarization-induced Schottky-like rectification at low bias, but dominated by a space-charge limited conduction mechanism at high bias. Our observation demonstrates visualization of ferroelectric domain structure by electric conduction, which may be used for nondestructive readout of nanoscale ferroelectric memories and/or ferroelectric sensors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

Aluminum nitride thin films were deposited by reactive high power impulse magnetron sputtering (HiPIMS) and pulsed direct-current on Si (100) and textured Mo substrates, where the same deposition conditions were used for both techniques. The films were characterized by x-ray diffraction and atomic force microscopy. The results show a pronounced improvement in the AlN crystalline texture for all films deposited by HiPIMS on Si. Already at room temperature, the HiPIMS films exhibited a strong preferred (002) orientation and at 400 °C, no contributions from other orientations were detected. Despite the low film thickness of only 200 nm, an ω-scan full width at half maximum value of 5.1° was achieved on Si. The results are attributed to the high ionization of sputtered material achieved in HiPIMS. On textured Mo, there was no significant difference between the deposition techniques.

42 ENGINEERING↗