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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Junction characteristics of silicon solar cells. Part 1: Nonilluminated case

Precise values of the reverse saturation currents in silicon solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell. The diffusion lengths calculated from the diffusion current components agree well with diffusion lengths measured independently in similar material. Models are given demonstrating the effect of recombination and shunting currents on the dark current-voltage characteristics of solar cells.

Stirn, R. J.↗
DOE OSTI2026

Degradation Dynamics of Perovskite Solar Cells Under Fixed Reverse Current Injection

Previous studies of reverse-bias stability in perovskite solar cells have focused primarily on voltage controlled reverse-bias tests. Here we instead present an investigation of perovskite solar cell degradation under well-defined, constant reverse-current stress. We show that the choice of hole-transport layer dictates the dominant degradation pathway: cells using thick poly(triphenylamine) (PTAA) layers with better indium-doped tin oxide (ITO) coverage can tolerate high reverse bias but quickly undergo catastrophic breakdown under fixed reverse current near their one-sun maximum power-point. In contrast, cells modified with the phosphonic-acid interface layer MeO-2PACz, with poorer ITO coverage compared to PTAA, exhibit soft, gradual, and largely recoverable degradation, regardless of the shading conditions. For MeO-2PACz devices, degradation increases with both current magnitude and duration. Importantly, when normalized by injected charge (current times duration), lower currents applied over longer times cause more severe degradation than higher currents over shorter periods. Combining electrical measurements with spatially resolved photoluminescence imaging, we argue against shunt formation and instead support an ion- and charge-mediated interfacial electrochemical degradation mode.

Applied Physics (physics.app-ph)↗
NASA NTRS1976

Silicon solar cells by ion implantation and pulsed energy processing

A new method for fabrication of silicon solar cells is being developed around ion implantation in conjunction with pulsed electron beam techniques to replace conventional furnace processing. Solar cells can be fabricated totally in a vacuum environment at room temperature. Cells with 10% AM0 efficiency have been demonstrated. High efficiency cells and effective automated processing capabilities are anticipated.

Kirkpatrick, A. R.↗
NASA NTRS1979

Engineering Area Investigation of Reliability Attributes and Accelerated Stress Factors on Terrestrial Solar Cells

Results obtained include the definition of a simplified stress test schedule for terrestrial solar cells based on the work performed during the first program year, and the design and fabrication of improved jigs and fixtures for electrical measurement and stress testing. Implementation of these advanced techniques for accelerated stress testing is underway on three solar cell types. In addition, review of the literature on second quadrant phenomena was begun and some preliminary second-quadrant electrical measurements were performed. Results obtained at the first down time for 75 C B-T testing and biased and unbiased T-H pressure cooker testing of type F cells showed little or no degradation in electrical parameters. Significant physical effects (large solder bubbles) were noted for type F cells subjected to the pressure cooker stress test.

Lathrop, J. W.↗
DOE OSTI2025

Charge carrier extraction and recombination effects in GaInAs/GaAsP multi-quantum well solar cells

The carrier extraction and transport mechanisms as well as the relative contributions of radiative and non-radiative recombination processes are investigated in high-quality strain-balanced GaInAs/GaAsP multi-quantum well solar cells recently implemented in record efficiency multijunction solar cells. A comprehensive suite of complementary characterization techniques including temperature- and suns-dependent photoluminescence and photovoltaic measurements are employed to analyze thermal escape and tunneling rates, which demonstrate the need to move beyond simple drift-diffusion models of p–n junctions. This study examines the processes that best characterize the operation of these devices across varying temperatures using a simple two-diode model, incorporating multiple transport protocols, and provides insights into the performance-limiting processes and pathways for their optimization.

14 SOLAR ENERGY↗
NASA NTRS1989

Flexibility in space solar cell production

The wide range of cells that must be available from present-day production lines for space solar cells are described. After over thirty years of space-cell use, there is very little standardization in solar cell design. It is not generally recognized what a wide range of designs must remain available on cell production lines. This range of designs is surveyed.

Khemthong, Scott↗
DOE OSTI2020

Spatially resolved characterization of optical and recombination losses for different industrial silicon solar cell architectures

In this work, spatially resolved characterization methods are used to identify loss mechanisms for common p -type silicon solar cell architectures, including multicrystalline aluminum back surface field (Al-BSF), monocrystalline Al-BSF, monocrystalline passivated emitter and rear cells (PERC), and bifacial monocrystalline PERC. The characterization methods used in this work include suns-V OC , photoluminescence imaging, and spatially resolved external quantum efficiency and reflectance measurements. The optical and recombination losses are driven by the material properties, cell processing conditions, and device architecture. These losses are quantified and categorized in terms of underlying mechanisms (e.g., front reflectance, escape reflectance, front recombination, and parasitic optical absorption and recombination in the bulk and rear). The ability to create images of these loss parameters can be used to gain more insight into the materials and manufacturing processes used to produce solar cells, and examples are given in this work to illustrate how these images can help reveal the origin of defects.

14 SOLAR ENERGY↗
DOE OSTI2022

Understanding the Effect of Lead Iodide Excess on the Performance of Methylammonium Lead Iodide Perovskite Solar Cells

The presence of unreacted lead iodide in organic-inorganic lead halide perovskite solar cells is widely correlated with an increase in power conversion efficiency. We investigate the mechanism for this increase by identifying the role of surfaces and interfaces present between methylammonium lead iodide perovskite films and excess lead iodide. We show how type I and II band alignments arising under different conditions result in either passivation of surface defects or hole injection. Through first-principles simulations of solid-solid interfaces, we find that lead iodide captures holes from methylammonium lead iodide and modulates the formation of defects in the perovskite, affecting recombination. Using surface-sensitive optical spectroscopy techniques, such as transient reflectance and time-resolved photoluminescence, we show how excess lead iodide affects the diffusion and surface recombination velocity of charge carriers in methylammonium lead iodide films. Our coupled experimental and theoretical results elucidate the role of excess lead iodide in perovskite solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

An analysis of carrier dynamics in methylammonium lead triiodide perovskite solar cells using cross correlation noise spectroscopy

Using cross correlation current noise spectroscopy, we have investigated carrier dynamics in methylammonium lead triiodide solar cells. This method provides space selectivity for devices with a planar multi-layered structure, effectively amplifying current noise contributions coming from the most resistive element of the stack. In the studied solar cells, we observe near full-scale shot noise, indicating the dominance of noise generation by a single source, likely the interface between the perovskite and the spiro-organic 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9'-spirobifluorene hole-transport layer. In this paper, we argue that the strong 1/f noise term has contributions from both the perovskite layer and interfaces. It displays a non-ideal dependence on photocurrent, S $\propto$ I 1.4 (instead of usual S $\propto$ I 2 ), which is likely due to current-induced halide migration. Finally, we observe generation–recombination noise. We argue that this contribution is due to bimolecular recombination in the perovskite bulk absorption layer. Extrapolating our results, we estimate that at standard 1 sun illumination, the electron–hole recombination time is 5 microseconds.

14 SOLAR ENERGY↗
DOE OSTI2020

Photonic Curing Enabling High-Speed Processing for Perovskite Solar Cells

The thermal annealing step is the bottleneck to high-throughput manufacturing of perovskite solar cells. In this work, we investigate photonic curing to replace thermal annealing for the sol gel NiO hole transport layer. Using solar cell device current density-voltage performance as a metric, we compare the effects of thermal annealing and photonic curing on the conversion of sol gel NiO films deposited on top of indium tin oxide coated Willow® glass substrates. The significant reduction in processing time validates photonic curing as the enabling tool for high-speed manufacturing.

Xu, Weijie↗
NASA NTRS1981

Silicon solar cells with nickel/solder metallization

The use of nickel plus solder is shown to be feasible for contact metallization for silicon solar cells by offering a relatively inexpensive method of making electrical contact with the cell surfaces. Nickel is plated on silicon solar cells using an electroless chemical deposition method to give contacts with good adhesion, and in some cases where adhesion is poor initially, sintering under relatively mild conditions will dramatically improve the quality of the bond without harming the p-n junction of the cell. The cells can survive terrestrial environment stresses, which is demonstrated by a 1000 hour test at 85 C and 85% relative humidity under constant forward bias of 0.45 volt.

Petersen, R. C.↗
DOE OSTI2026

Forming Gas Annealing Improves the Performance of Ex Situ Sb-Doped CdSeTe Thin-Film Solar Cells

Group V doping in cadmium-selenide-telluride (CdSeTe) polycrystalline thin-film solar cells has demonstrated improved power conversion efficiencies (PCEs) and long-term stabilities as compared to the traditional Cu doping in the last decade. The dopants can be successfully incorporated by either in situ or ex situ doping. Here, we report that forming gas (FG) annealing enhances the efficiencies of CdSeTe polycrystalline thin-film solar cells utilizing ex situ antimony (Sb) doping via close-space sublimation of SbCl3 at ambient pressure. The FG annealing increases the hole density and carrier lifetime, reduces the back barrier height, and, therefore, leads to improved open-circuit voltages (VOCs) and fill factors (FFs). The champion device achieves a PCE of 19.2% with a VOC of 877 mV, a current density (JSC) of 30.2 mA/cm2, and an FF of 72.4%. Importantly, the Sb-doped devices showed improved stability under stress tests as compared to Cu-doped devices.

14 SOLAR ENERGY↗
NASA NTRS1986

Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.

Weinberg, I.↗
DOE OSTI2020

An Optimized Fibril Network Morphology Enables High‐Efficiency and Ambient‐Stable Polymer Solar Cells

Abstract Morphological stability is crucially important for the long‐term stability of polymer solar cells (PSCs). Many high‐efficiency PSCs suffer from metastable morphology, resulting in severe device degradation. Here, a series of copolymers is developed by manipulating the content of chlorinated benzodithiophene‐4,8‐dione (T1‐Cl) via a random copolymerization approach. It is found that all the copolymers can self‐assemble into a fibril nanostructure in films. By altering the T1‐Cl content, the polymer crystallinity and fibril width can be effectively controlled. When blended with several nonfullerene acceptors, such as TTPTT‐4F, O‐INIC3, EH‐INIC3, and Y6, the optimized fibril interpenetrating morphology can not only favor charge transport, but also inhibit the unfavorable molecular diffusion and aggregation in active layers, leading to excellent morphological stability. The work demonstrates the importance of optimization of fibril network morphology in realizing high‐efficiency and ambient‐stable PSCs, and also provides new insights into the effect of chemical structure on the fibril network morphology and photovoltaic performance of PSCs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy

A 24%-efficient single-junction GaAs solar cell grown directly on a faceted, spalled (100) GaAs substrate after in situ planarization growth by hydride vapor phase epitaxy (HVPE) is achieved. Controlled spalling, a promising low-cost substrate reuse technique, produces large facets in (100)-oriented GaAs substrates due to the orientation of the fracture planes used for lift-off. Planarization by HVPE offers a path toward direct use of these spalled substrates without costly polishing steps. In this report the growth rate anisotropy enabling planarization arising from diffusion and differences in the adsorption of growth species on {n11}B-type facets relative to (100) is determined. Consecutive planarization and device growth that results in a solar cell with a minimal performance difference relative to a control cell grown on an epitaxy-ready substrate are demonstrated. These results show that controlled spalling coupled with HVPE planarization is a viable pathway for lowering the cost of III-V photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2020

Morphological–Electrical Property Relation in Cu(In,Ga)(S,Se) 2 Solar Cells: Significance of Crystal Grain Growth and Band Grading by Potassium Treatment

Abstract Solution‐processed Cu(In,Ga)(S,Se) 2 (CIGS) has a great potential for the production of large‐area photovoltaic devices at low cost. However, CIGS solar cells processed from solution exhibit relatively lower performance compared to vacuum‐processed devices because of a lack of proper composition distribution, which is mainly instigated by the limited Se uptake during chalcogenization. In this work, a unique potassium treatment method is utilized to improve the selenium uptake judiciously, enhancing grain sizes and forming a wider bandgap minimum region. Careful engineering of the bandgap grading structure also results in an enlarged space charge region, which is favorable for electron–hole separation and efficient charge carrier collection. Besides, this device processing approach has led to a linearly increasing electron diffusion length and carrier lifetime with increasing the grain size of the CIGS film, which is a critical achievement for enhancing photocurrent yield. Overall, 15% of power conversion efficiency is achieved in solar cells processed from environmentally benign solutions. This approach offers critical insights for precise device design and processing rules for solution‐processed CIGS solar cells.

Kim, Joo‐Hyun↗
NASA NTRS1979

Development and Testing of Shingle-type Solar Cell Modules

The design, development, fabrication and testing of a shingle-type terrestrial solar cell module which produces 98 watts/sq m of exposed module area at 1 kW/sq m insolation and 61 C are reported. These modules make it possible to easily incorporate photovoltaic power generation into the sloping roofs of residential or commercial buildings by simply nailing the modules to the plywood roof sheathing. This design consists of nineteen series-connected 53 mm diameter solar cells arranged in a closely packed hexagon configuration. These cells are individually bonded to the embossed surface of a 3 mm thick thermally tempered hexagon-shaped piece of glass. Polyvinyl butyral is used as the laminating adhesive.

Shepard, N. F., Jr.↗