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At least 1,405 records · Page 78

Evaluation of the MICAST #2-12 AI-7wt%Si Sample Directionally Solidified Aboard the International Space Station

The US team of the European led "MIcrostructure Formation in CASTing of Technical Alloys under Diffusive and Magnetically Controlled Convective Conditions" (MICAST) program recently received a third Aluminum - 7wt% silicon alloy that was processed in the microgravity environment aboard the International Space Station. The sample, designated MICAST#2-12, was directionally solidified in the Solidification with Quench Furnace (SQF) at a constant rate of 40micometers/s through an imposed temperature gradient of 31K/cm. Procedures taken to evaluate the state of the sample prior to sectioning for metallographic analysis are reviewed and rational for measuring the microstructural constituents, in particular the primary dendrite arm spacing (Lambda (sub1)), is given. The data are presented, put in context with the earlier samples, and evaluated in view of a relevant theoretical model.

Tewari, Surendra N.↗

Laboratory Measurements of the K-Shell Transition Energies in L-Shell Ions of Si and S

We have measured the energies of the strongest 1s-2 ℓ (azimuthal quantum number) (ℓ = s, p (s, p are angular momentum states)) transitions in He- through Ne-like silicon and sulfur ions to an accuracy of less than 1 electronvolt using the Lawrence Livermore National Laboratory's electron beam ion traps, EBIT-I and SuperEBIT, and the NASA/GSFC EBIT Calorimeter Spectrometer (ECS). We identify and measure the energies of 18 and 21 X-ray features from silicon and sulfur, respectively. The results are compared to new Flexible Atomic Code calculations and to semi-relativistic Hartree-Fock calculations by Palmeri et al. (2008). These results will be especially useful for wind diagnostics in high-mass X-ray binaries, such as Vela X-1 and Cygnus X-1, where high-resolution spectral measurements using Chandraʼs high-energy transmission grating has made it possible to measure Doppler shifts of 100 kilometers per second. The accuracy of our measurements is consistent with that needed to analyze Chandra observations, exceeding Chandraʼs 100 kilometers per second limit. Hence, the results presented here not only provide benchmarks for theory, but also accurate rest energies that can be used to determine the bulk motion of material in astrophysical sources. We show the usefulness of our results by applying them to redetermine Doppler shifts from Chandra observations of Vela X-1.

atomic data↗

Characterization of Si-Membrane TES Bolometer Arrays for the HIRMES Instrument

The High Resolution Mid-Infrared Spectrometer (HIRMES) instrument will fly onboard NASA's airborne Stratospheric Observatory for Infrared Astronomy (SOFIA) in 2019. HIRMES will provide astronomers with a unique observing window (25 122 µm) for exploring the evolution of protoplanetary disks into young solar systems, and the composition of our Solar System. There are two focal plane detector arrays for the instrument: a high-resolution (/ = 100,000) 8x16 detector array with a target noise-equivalent power, NEP 3x10-18 W/Hz; and a low-resolution (/ = 2,000 19,000) 16x64 detector array with a target NEP 2x10-17 W/Hz. The detectors for both of these arrays are superconducting Mo/Au bilayer transition edge sensor (TES) bolometers on thin suspended single-crystal silicon membranes. Here we present our characterization results for the detectors in both arrays, including measurements of thermal conductance with comparison to phonon transport models, saturation power, noise, and array uniformity.

Instrumentation and Photography↗

Quantitative analysis of charge injection and discharging of Si nanocrystals and arrays by electrostatic force microscopy

NASA requirements for computing and memory for microspacecraft emphasizes high density, low power, small size, and radiation hardness. The distributed nature of a storage elements in nanocrystal floating-gate memories leads to instrinsic fault tolerance and radiation-hardness. Nanocrystal-based memories also offer the possibility of a faster, lower power operation.

atomic↗

Tailorable Doping-Spike PtSi Infrared Detectors Fabricated by Si Molecular Beam Epitaxy

By incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface, we have successfullydemonstrated extended cutoff wavelengths of PtSi Schottky infrared detectors. The extended cutoffwavelengths resulted from the reduced effective potential barriers due to the combined effects of anincreased electric field near the silicide/Si interface and the Schottky image force. The p+ dopingspikes were grown by molecular beam epitaxy at 450 degrees C using elemental boron as the dopantsource, with doping concentrations ranging from 5 x 10^(19) to 2 x 10^(20) cm^(-3). The cutoffwavelengths were shown to increase with increasing doping concentrations of the p+ spikes. Thermionic emission dark current characteristics were observed and photoresponse in the LWIRregime was demonstrated. Furthermore, the effective potential barriers determined by the Richardsonplots were used to study the electrically activated boron dopant concentrations of the thin (1-nm-thick) spikes.

del Castillo, H. M.↗

Improving the longest SI traceable hyperspectral infrared record from space from the AIRS

The Atmospheric Infrared Sounder (AIRS) is a “facility” instrument developed by NASA as an experimental demonstration of advanced technology for remote sensing and the benefits of high resolution infrared spectra to weather forecasting and science investigations . It was launched into a 1:30 am/pm polar orbit on May 4, 2002 on the EOS Aqua Spacecraft, and is expected to provide highly calibrated data beyond 2024. AIRS has 2378 infrared channels ranging from 3.7 um to 15.4 um and a 13.5 km footprint. The AIRS data are used for weather forecasting, climate process studies and validating climate models. AIRS is a vital IR reference sensor for GSICS and is used by JMA for comparison to Himawari AHI , KMA for comparison to COMS , NOAA for comparison to CrIS and GOES , and EUMETSAT for comparison to IASI .

Strow, Larrabee↗

Cold Conditions Promote Mg and Si Incorporation in Fe/Si-Rich and Al-Poor X-Ray Amorphous Material in Mars-Relevant Field Environments

X-ray amorphous material that is variably Fe/Si-rich, Al-poor, and volatile containing is prevalent (~15-73 wt.%) within ancient fluvial-lacustrine and eolian sediments examined by the CheMin instrument in Gale crater. Al-rich X-ray amorphous material within Mars-analog environments on Earth has previously been proposed to result from aqueous alteration under cold and icy conditions. However, to the best of our knowledge, no work to date has examined the effects of climate upon the formation of Al-poor and Fe/Si-rich X-ray amorphous material. This study therefore investigates the production of Al-poor and Fe-containing X-ray amorphous material and the chemical heterogeneity within that material under varying temperature conditions to better interpret the formation of Fe-containing X-ray amorphous material detected on Mars.

A D Feldman↗

Foreign Object Damage in Yb 2 Si 2 O 7 Environmental Barrier Coatings

Environmental Barrier Coatings (EBCs) have been developed as an enabling technology for silicon carbide based ceramic matrix composites in gas turbine engines. Two of the key failure mechanisms identified in EBC systems are foreign object damage (FOD) and the oxidative growth of a SiO 2 thermally grown oxide (TGO) layer that can lead to premature coating spallation. Previously the effects of FOD on NASA’s second generation Ytterbium Disilicate EBC were studied and recently it was shown that the addition of oxide modifiers resulted in improved oxidation resistance in the EBC. This work will compare FOD of the baseline Ytterbium Disilicate EBC to the that of the modified EBC. FOD was performed at room temperature using a 1.59 mm hardened steel ball with projectile velocities of 50-300 m/s. Additionally, the effects of oxidation via cyclic steam exposure prior to impact were investigated.

environmental barrier coatings (EBCs)↗

Total Ionizing Dose Test Report Microchip JANTXV2N6284 NPN Darlington Power Si Transistor

This study was undertaken to determine the effects of total ionizing dose (TID) on the JANTXV2N6284 NPN Darlington power bipolar junction transistor (BJT). The device was parametrically characterized prior to, at each incremental dose step, and after irradiation. Testing was at a low-dose rate using the NASA GSFC Radiation Effects Facility (REF).

Kaitlyn L Ryder↗