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At least 1,405 records · Page 78

Development of a precision reverse offset printing system

In printed electronics technology, the overlay accuracy of printed patterns is a very important issue when applying printing technology to the production of electric devices. In order to achieve accurate positioning of the printed patterns, this study proposes a novel precision reverse offset printing system. Furthermore, the study evaluates the effects of synchronization and printing force on position errors of the printed patterns, and presents methods of controlling synchronization and printing force so as to eliminate positional errors caused by the above-mentioned reasons. Finally, the printing position repeatability of 0.40 μm and 0.32 μm (x and y direction, respectively) at a sigma level is obtained over the dimension of 100 mm under repeated printing tests with identical printing conditions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Reversible ultrafast melting in bulk CdSe

In this work, transient reflectivity changes in bulk CdSe have been measured with two-color femtosecond pump-probe spectroscopy under a wide range of pump fluences. Three regions of reflectivity change with pump fluences have been consistently revealed for excited carrier density, coherent phonon amplitude, and lattice temperature. For laser fluences from 13 to 19.3 mJ/cm{sup 2}, ultrafast melting happens in first several picoseconds. This melting process is purely thermal and reversible. A complete phase transformation in bulk CdSe may be reached when the absorbed laser energy is localized long enough, as observed in nanocrystalline CdSe.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Reverse degradation of nickel graphene junction by hydrogen annealing

Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel graphene junction degrades after air exposure, due to interfacial oxidation, thus creating a tunneling barrier. Most importantly, we demonstrate that hydrogen annealing at moderate temperature (300 {sup 0}C) is an effective technique to reverse the degradation.

36 MATERIALS SCIENCE↗

Reversible control of magnetism in La 0.67 Sr 0.33 MnO 3 through chemically-induced oxygen migration

We demonstrate reversible control of magnetization and anisotropy in La 0.67 Sr 0.33 MnO 3 films through interfacial oxygen migration. Gd metal capping layers deposited onto La 0.67 Sr 0.33 MnO 3 leach oxygen from the film through a solid-state redox reaction to form porous Gd 2 O 3 . X-ray absorption and polarized neutron reflectometry measurements show Mn valence alterations consistent with high oxygen vacancy concentrations, resulting in suppressed magnetization and increased coercive fields. Effects of the oxygen migration are observed both at the interface and also throughout the majority of a 40 nm thick film, suggesting extensive diffusion of oxygen vacancies. After Gd-capped La 0.67 Sr 0.33 MnO 3 is exposed to atmospheric oxygen for a prolonged period of time, oxygen diffuses through the Gd 2 O 3 layer and the magnetization of the La 0.67 Sr 0.33 MnO 3 returns to the uncapped value. In conclusion, these findings showcase perovskite heterostructures as ideal candidates for developing functional interfaces through chemically-induced oxygen migration.

36 MATERIALS SCIENCE↗

Statistical effects related to low numbers of reacting molecules analyzed for a reversible association reaction A + B = C in ideally dispersed systems: An apparent violation of the law of mass action

Theoretical analysis and computer simulations (Monte Carlo and numerical integration of differential equations) show that the statistical effect of a small number of reacting molecules depends on a way the molecules are distributed among the small volume nano-reactors (droplets in this study). A simple reversible association A + B = C was chosen as a model reaction, enabling to observe both thermodynamic (apparent equilibrium constant) and kinetic effects of a small number of reactant molecules. When substrates are distributed uniformly among droplets, all containing the same equal number of substrate molecules, the apparent equilibrium constant of the association is higher than the chemical one (observed in a macroscopic—large volume system). The average rate of the association, being initially independent of the numbers of molecules, becomes (at higher conversions) higher than that in a macroscopic system: the lower the number of substrate molecules in a droplet, the higher is the rate. This results in the correspondingly higher apparent equilibrium constant. A quite opposite behavior is observed when reactant molecules are distributed randomly among droplets: the apparent association rate and equilibrium constants are lower than those observed in large volume systems, being the lower, the lower is the average number of reacting molecules in a droplet. The random distribution of reactant molecules corresponds to ideal (equal sizes of droplets) dispersing of a reaction mixture. Our simulations have shown that when the equilibrated large volume system is dispersed, the resulting droplet system is already at equilibrium and no changes of proportions of droplets differing in reactant compositions can be observed upon prolongation of the reaction time.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The general theory of multistage geminate reactions of isolated pairs of reactants. III. Two-stage reversible dissociation in geminate reaction A + A↔C↔B + B

Specific two-stage reversible reaction A + A↔C↔B + B of the decay of species C reactants by two independent transition channels is considered on the basis of the general theory of multistage reactions of isolated pairs of reactants. It is assumed that at the initial instant of time, the reacting system contains only reactants C. The employed general approach has made it possible to consider, in the general case, the inhomogeneous initial distribution of reactants, and avoid application of model concepts of a reaction system structure (i.e., of the structure of reactants and their molecular mobility). Slowing of multistage reaction kinetics as compared to the kinetics of elementary stages is established and physically interpreted. To test approximations (point approximation) used to develop a universal kinetic law, a widely employed specific model of spherical particles with isotropic reactivity diffusing in solution is applied. With this particular model as an example, ultimate kinetics of chemical conversion of reactants is investigated. The question concerning the depths of chemical transformation at which long-term asymptotes are reached is studied.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Critical energy barrier for capillary condensation in mesopores: Hysteresis and reversibility

Capillary condensation in the regime of developing hysteresis occurs at a vapor pressure, P{sub cond}, that is less than that of the vapor-like spinodal. This is because the energy barrier for the vapor-liquid transition from a metastable state at P{sub cond} becomes equal to the energy fluctuation of the system; however, a detailed mechanism of the spontaneous transition has not been acquired even through extensive experimental and simulation studies. We therefore construct accurate atomistic silica mesopore models for MCM-41 and perform molecular simulations (gauge cell Monte Carlo and grand canonical Monte Carlo) for argon adsorption on the models at subcritical temperatures. A careful comparison between the simulation and experiment reveals that the energy barrier for the capillary condensation has a critical dimensionless value, W{sub c}{sup *} = 0.175, which corresponds to the thermal fluctuation of the system and depends neither on the mesopore size nor on the temperature. We show that the critical energy barrier W{sub c}{sup *} controls the capillary condensation pressure P{sub cond} and also determines a boundary between the reversible condensation/evaporation regime and the developing hysteresis regime.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions

Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Investigation of the effects of metal-wire resonators in sub-wavelength array based on time-reversal technique

The resonant metalens consisting of metal-wire resonators with equally finite length can break the diffraction barrier well suited for super-resolution imaging. In this study, a basic combination constructed by two metal-wire resonators with different lengths is proposed, and its resonant characteristics is analyzed using the method of moments (MoM). Based on the time reversal (TR) technique, this kind of combination can be applied to a sub-wavelength two-element antenna array with a 1/40-wavelength interval to make the elements work simultaneously with little interference in the frequency band of 1.0-1.5 GHz and 1.5-2.0 GHz, respectively. The simulations and experiments show that analysis of MoM and the application of the resonators can be used to design multi-frequency sub-wavelength antenna arrays efficiently. This general design method is convenient and can be used for many applications, such as weakening jamming effectiveness in communication systems, and sub-wavelength imaging in a broad frequency band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetization reversal of the domain structure in the anti-perovskite nitride Co{sub 3}FeN investigated by high-resolution X-ray microscopy

We performed X-ray magnetic circular dichroism (XMCD) photoemission electron microscopy imaging to reveal the magnetic domain structure of anti-perovskite nitride Co{sub 3}FeN exhibiting a negative spin polarization. In square and disc patterns, we systematically and quantitatively determined the statistics of the stable states as a function of geometry. By direct imaging during the application of a magnetic field, we revealed the magnetic reversal process in a spatially resolved manner. We compared the hysteresis on the continuous area and the square patterns from the magnetic field-dependent XMCD ratio, which can be explained as resulting from the effect of the shape anisotropy, present in nanostructured thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Reverse-absorbance-modulation-optical lithography for optical nanopatterning at low light levels

Absorbance-Modulation-Optical Lithography (AMOL) has been previously demonstrated to be able to confine light to deep sub-wavelength dimensions and thereby, enable patterning of features beyond the diffraction limit. In AMOL, a thin photochromic layer that converts between two states via light exposure is placed on top of the photoresist layer. The long wavelength photons render the photochromic layer opaque, while the short-wavelength photons render it transparent. By simultaneously illuminating a ring-shaped spot at the long wavelength and a round spot at the short wavelength, the photochromic layer transmits only a highly confined beam at the short wavelength, which then exposes the underlying photoresist. Many photochromic molecules suffer from a giant mismatch in quantum yields for the opposing reactions such that the reaction initiated by the absorption of the short-wavelength photon is orders of magnitude more efficient than that initiated by the absorption of the long-wavelength photon. As a result, large intensities in the ring-shaped spot are required for deep sub-wavelength nanopatterning. In this article, we overcome this problem by using the long-wavelength photons to expose the photoresist, and the short-wavelength photons to confine the “exposing” beam. Thereby, we demonstrate the patterning of features as thin as λ/4.7 (137 nm for λ = 647 nm) using extremely low intensities (4-30 W/m{sup 2}, which is 34 times lower than that required in conventional AMOL). We further apply a rigorous model to explain our experiments and discuss the scope of the reverse-AMOL process.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Photo- and gas-tuned, reversible thermoelectric properties and anomalous photo-thermoelectric effects of platinum-loaded tungsten trioxide

We report the photo- and gas-controllable properties of platinum-loaded tungsten trioxide (Pt/WO{sub 3}), which is of interest for developing practical applications of WO{sub 3} as well as for interpreting such phenomena from scientific viewpoints. Here, a Pt/WO{sub 3} thin film generated a thermoelectric power due to the ultraviolet-light-induced band-gap excitation (photochromic (PC) reaction) and/or dark storage in formic acid vapor (gaschromic (GC) reaction) in the absence of O{sub 2}, resulting from the generation of W{sup 5+} ions. After such chromic reactions, the electrical conductivity (σ) is increased, whereas the absolute value of the Seebeck coefficient (S) is decreased. The changes in σ and S and their rate of change for consistency increased in the order of: during the PC reaction < during the GC reaction < during simultaneous PC and GC reactions. The opposite behaviors, a decrease in σ and an increase in S, were exhibited by Pt/WO{sub 3} in the presence of O{sub 2} after dark storage or visible-light irradiation. This reversible cycle could be repeated. Moreover, anomalous, nontrivial photo-thermoelectric effects (a photoconductive effect (photoconductivity, σ{sub photo}) and a photo-Seebeck effect (photo-Seebeck coefficient, S{sub photo})) were also detected in response to the visible-light irradiation of Pt/WO{sub 3} in the absence of O{sub 2} after chromic reactions. Under visible-light irradiation, both σ{sub photo} and the absolute value of S{sub photo} are increased. After the irradiation, both values were decreased, that is, σ and the absolute value of S were smaller than σ{sub photo} and the absolute value of S{sub photo}, respectively. These effects are likely to be due to the photoinduced charge carriers and the accumulated electrons in Pt contributing to the increase in σ{sub photo}. In addition, electrons are extracted from the W{sup 5+} state, decreasing the number of W{sup 5+} in H{sub x}WO{sub 3} and thus contributing to the increase in S{sub photo}. After light irradiation, the accumulated electrons in Pt are returned to the energetically favorable W{sup 5+} state, and Pt/H{sub x}WO{sub 3} are returned to the initial state. Then both σ and S are decreased. The mechanisms of our anomalous, nontrivial photo-thermoelectric effects are presumed to be different from that involving the two-carrier contribution to the transport properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Reverse-bias-driven dichromatic electroluminescence of n-ZnO wire arrays/p-GaN film heterojunction light-emitting diodes

Position-controlled n-ZnO microwire (MW) and nanowire-bundle (NW-B) arrays were fabricated using hydrothermal growth of ZnO on a patterned p-GaN film. Both the wire/film p–n heterojunctions showed electrical rectification features at reverse-bias (rb) voltages, analogous to backward diodes. Dichromatic electroluminescence (EL) emissions with 445- and 560-nm-wavelength peaks displayed whitish-blue and greenish-yellow light from MW- and NW-B-based heterojunctions at rb voltages, respectively. The different dichromatic EL emission colors were studied based on photoluminescence spectra and the dichromatic EL peak intensity ratios as a function of the rb voltage. The different EL colors are discussed with respect to depletion thickness and electron tunneling probability determined by wire/film junction geometry and size.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Reverse Mössbauer effect as a possible source of “hot” molecules absorbed in crystalline solids at low temperature

As an attempt to explain some of the many anomalies and unresolved problems which have been reported about the dynamic behavior of particles and molecules absorbed in crystalline solids, the “reverse Mössbauer effect” (RME) is proposed. RME theory posits that a particle in non-equilibrium state with respect to a crystal (colliding with the crystal or absorbed in it, but set out of thermal equilibrium by some external cause) is scattered by the whole crystal with a momentum proportional to a vector representing a reciprocal lattice point. The scattering is expected to occur with a well-defined probability and the momentum transferable to the particle is expected to follow a predictable distribution. The RME theory, in practice, is an extension of the Bragg–von Laue scattering law to high-energy colliding particles, in general, and can be applied to any particle or molecule colliding with the surface of a crystalline solid or absorbed in it, but not in thermal equilibrium with the crystal lattice. We verified the RME theory by considering a well-defined unresolved problem. In an experimental study about methane adsorbed in the zeolite Na-ZSM-5 [H. Jobic, Chem. Phys. Lett. 170, 217 (1990)] reporting neutron inelastic-scattering spectra (recoiled bands) at 10 K, the translational kinetic energy of methane resulted to be much higher than equilibrium expected value, namely, about 85 K (or 7.3 meV). The author concluded that “the interpretation of this unusual behavior has yet to be found.” In the present study, on the basis of the RME, an explanation of this behavior is put forward.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

I2 basal stacking fault as a degradation mechanism in reverse gate-biased AlGaN/GaN HEMTs

Here, we present the observation of a bias-induced, degradation-enhancing defect process in plasma-assisted molecular beam epitaxy grown reverse gate-biased AlGaN/GaN high electron mobility transistors (HEMTs), which is compatible with the current theoretical framework of HEMT degradation. Specifically, we utilize both conventional transmission electron microscopy and aberration-corrected transmission electron microscopy to analyze microstructural changes in not only high strained regions in degraded AlGaN/GaN HEMTs but also the extended gate-drain access region. We find a complex defect structure containing an I2 basal stacking fault and offer a potential mechanism for device degradation based on this defect structure. This work supports the reality of multiple failure mechanisms during device operation and identifies a defect potentially involved with device degradation.

Lang, A. C.↗

Evidence for drift waves in the turbulence of reversed field pinch plasmas

A detailed characterization of the high-frequency range of the fluctuation spectrum in reversed field pinch plasmas is presented, revealing a variety of new features distinct from global tearing modes and the cascade that they are thought to drive. The anisotropic broadband spectrum of the fluctuating electric field is measured. The power in the fluctuating kinetic energy (1/2) m(i)n(i)(V) over tilde (2)((E) over tilde xB0), previously measured to be smaller than the magnetic energy in the tearing-mode-unstable frequency range, becomes greater than and diverges from the magnetic energy above 60-80 kHz. The lack of equipartition at high frequencies coincides with the measured signatures of the independent fluctuation activity broadly consistent with the drift-wave fluctuations. Statistical coherence measurements reveal the mode activity that is compressive with a large amplitude in the vicinity of strong density gradients and with a phase speed comparable to the electron drift speed. There is a distinct high-frequency correlation between the fluctuations of density and the parallel magnetic field. Elevated coherences associated with this fluctuation feature return more quickly after a sawtooth event than the corresponding coherences associated with tearing activity.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Drift-wave stability in the field-reversed configuration

Gyrokinetic simulations of C-2-like field-reversed configuration (FRC) find that electrostatic drift-waves are locally stable in the core. The stabilization mechanisms include finite Larmor radius effects, magnetic well (negative grad-B), and fast electron short circuit effects. In the scrape-off layer (SOL), collisionless electrostatic drift-waves in the ion-to-electron-scale are destabilized by electron temperature gradients due to the resonance with locally barely trapped electrons. Collisions can suppress this instability, but a collisional drift-wave instability still exists at realistic pressure gradients. Simulation results are in qualitative agreement with C-2 FRC experiments. In particular, the lack of ion-scale instability in the core is not inconsistent with experimental measurements of a fluctuation spectrum showing a depression at ion-scales. Here, the pressure gradient thresholds for the SOL instability from simulations are also consistent with the critical gradient behavior observed in experiments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Turbulence, transport, and zonal flows in the Madison symmetric torus reversed-field pinch

The robustness and the effect of zonal flows in trapped electron mode (TEM) turbulence and Ion Temperature Gradient (ITG) turbulence in the reversed-field pinch (RFP) are investigated here from numerical solutions of the gyrokinetic equations with and without magnetic external perturbations introduced to model tearing modes. For simulations without external magnetic field perturbations, zonal flows produce a much larger reduction of transport for the density-gradient-driven TEM turbulence than they do for the ITG turbulence. Zonal flows are studied in detail to understand the nature of their strong excitation in the RFP and to gain insight into the key differences between the TEM- and ITG-driven regimes. The zonal flow residuals are significantly larger in the RFP than in tokamak geometry due to the low safety factor. Collisionality is seen to play a significant role in the TEM zonal flow regulation through the different responses of the linear growth rate and the size of the Dimits shift to collisionality, while affecting the ITG only minimally. A secondary instability analysis reveals that the TEM turbulence drives zonal flows at a rate that is twice that of the ITG turbulence. In addition to interfering with zonal flows, the magnetic perturbations are found to obviate an energy scaling relation for fast particles.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗