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Experimental evidence for an optical interference model for vibrational sum frequency generation on multilayer organic thin film systems. I. Electric dipole approximation
In the field of vibrational sum frequency generation spectroscopy (VSFG) applied to organic thin film systems, a significant challenge to data analysis is in the accurate description of optical interference effects. Herein, we provide experimental evidence that a model recently developed in our lab provides an accurate description of this phenomenon. We studied the organic small molecule N,N′-dioctyl-3,4,9,10-perylenedicarboximide vapor deposited as a thickness gradient on silicon wafer substrates with two oxide thicknesses and two surface preps. VSFG data were obtained using the ssp and the sps polarization combinations in the imide carbonyl stretching region as a function of organic thickness. In this first of two reports, the data are modeled and interpreted within the ubiquitous electric dipole approximation for VSFG. The intrinsic sample responses are parameterized during the fitting routines while optical interference effects are simply calculated from the model using known refractive indices, thin film thicknesses, and beam angles. The results indicate that the thin film model provides a good description of optical interferences, indicating that interfacial terms are significant. Inconsistencies between the fitting results within the bounds of the electric dipole response motivate deliberation for additional effects to be considered in the second report.
Maximum screening fields of superconducting multilayer structures
Not Available
Reflective multilayer optic as hard X-ray diagnostic on laser-plasma experiment
Not Available
Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]
No abstract prepared.
Design and optimization of microbolometer multilayer optical cavity
Microbolometers are the most widely used detectors in long-wave infrared uncooled thermal imagers. An optical cavity is required within a microbolometer structure to increase its optical absorption. In this work we present a detailed study on the design and optimization of a microbolometer optical cavity using Essential-Macleod package. In the simulations, the cavity is considered as thin film multi-layers that form cascaded Fabry-Perot optical cavities. In the design phase, the layers structures are selected including materials and initial thickness. The absorbing layers are chosen to be vanadium-pentoxide (V{sub 2}O{sub 5}) and titanium (Ti). In the optimization phase, the designed layer thicknesses are varied to maximize optical absorption within the absorbing layers. The simulations show that Ti layer absorption dominates over V{sub 2}O{sub 5} layer. Also, the optimization proves that the air-gap cavity thickness is not simply quarter-wavelength because of the complex cascaded Fabry-Perot structure. The optimized air-gap thickness here is ≈3.5 µm at 10.6µm wavelength.
Layer thickness dependence of current induced effective fields in ferromagnetic multilayers
We report the relation between current induced effective fields and ferromagnetic layer thickness. Hall measurements with rotating magnetic field show that the transverse and perpendicular effective fields have linear relations to the inverse of the magnetic moment m per area S. The results imply that both of these effective fields may originate from spin angular momentum transferring. However, the non-zero intercept of the transverse field at m/S = 0 implies that magnetization independent effects, such as Rashba effect, may contribute to transverse field.
Evaluation of pulsed laser annealing for flexible multilayer MoS{sub 2} transistors
To realize the proper electrical characteristics of field-effect transistors, the quality of the contact and interface must be improved because they can substantially distort the extracted mobility, especially for materials with low densities of states like molybdenum disulfide (MoS{sub 2}). We show that mechanically flexible MoS{sub 2} thin-film transistors (TFTs) with selectively laser annealed source/drain electrodes achieve enhanced device performance without plastic deformation including higher field-effect mobility (from 19.59 to 45.91 cm{sup 2} V{sup −1} s{sup −1}) in the linear regime, decreased subthreshold swing, and enhanced current saturation. Furthermore, numerical thermal simulations, measured current-voltage characteristics, and contact-free mobility extracted from the Y-function method suggest that the enhanced performance originated from a decrease in the Schottky barrier effect at the contact and an improvement of the channel interface. These results demonstrate that picosecond laser annealing can be a promising technology for building high performance flexible MoS{sub 2} TFTs in flexible/stretchable circuitry, which should be processed at low temperatures.
Exchange coupling in hybrid anisotropy magnetic multilayers quantified by vector magnetometry
Hybrid anisotropy thin film heterostructures, where layers with perpendicular and in-plane anisotropy are separated by a thin spacer, are novel materials for zero/low field spin torque oscillators and bit patterned media. Here, we report on magnetization reversal and exchange coupling in a archetypal Co/Pd (perpendicular)-NiFe (in-plane) hybrid anisotropy system studied using vector vibrating sample magnetometry. This technique allows us to quantify the magnetization reversal in each individual magnetic layer, and measure of the interlayer exchange as a function of non-magnetic spacer thickness. At large (>1 nm) spacer thicknesses Ruderman-Kittel-Kasuya-Yosida-like exchange dominates, with orange-peel coupling providing a significant contribution only for sub-nm spacer thickness.
Electrical characterization of multilayer HfSe{sub 2} field-effect transistors on SiO{sub 2} substrate
We fabricated and characterized two-dimensional field-effect transistors (FETs) based on hafnium diselenide (HfSe{sub 2}) crystalline nanoflakes. The HfSe{sub 2} FET exhibits an n-type semiconductor behavior with a high on/off current ratio exceeding 7.5 × 10{sup 6}. In the temperature range of 120 K–280 K, the thermally activated transport is observed at high carrier concentrations, while at low concentrations and low temperatures hopping conduction dominates the transport mechanism. We also observed the metal insulator transition at carrier density of ∼1.8 × 10{sup 12 }cm{sup −2}. This initial report on the physical and electrical characterization of two dimensional HfSe{sub 2} material demonstrates the feasibility of this semiconducting material for electronic devices.
Charge transport-accumulation in multilayer structures with Si{sub 3}N{sub 4} and thick(5.5 nm) SiO{sub 2}
Double-injection, transport, and accumulation of charge in metal-thick oxide-nitride-silicon and silicon-tunnel oxide-nitride-thick oxide-silicon structures have been theoretically studied. Calculation results were compared to experimental results. The charge transport in Si{sub 3}N{sub 4} is quantitatively described assuming the multiphonon ionization theory of neutral traps with a capture cross-section less than 10{sup −14} cm{sup 2}. With traps amphoterism taken into account, the calculation predicts the existence of a layer with their excessive concentration near the SiO{sub 2}/Si{sub 3}N{sub 4} interface. The model satisfactorily describes the write/erase characteristics in silicon-oxide-nitride-oxide-silicon-structures from Bu and White (Solid-State Electron. 45, 113 (2001))
The role of the non-magnetic material in spin pumping and magnetization dynamics in NiFe and CoFeB multilayer systems
We present a study of the effective magnetization M{sub eff} and the effective damping parameter α{sub eff} by means of ferromagnetic resonance spectroscopy on the ferromagnetic (FM) materials Ni{sub 81}Fe{sub 19} (NiFe) and Co{sub 40}Fe{sub 40}B{sub 20} (CoFeB) in FM/Pt, FM/NM, and FM/NM/Pt systems with the non-magnetic (NM) materials Ru, Cr, Al, and MgO. Moreover, for NiFe layer systems, the influence of interface effects is studied by way of thickness dependent measurements of M{sub eff} and α{sub eff}. Additionally, spin pumping in NiFe/NM/Pt is investigated by means of inverse spin Hall effect (ISHE) measurements. We observe a large dependence of M{sub eff} and α{sub eff} of the NiFe films on the adjacent NM layer. While Cr and Al do not induce a large change in the magnetic properties, Ru, Pt, and MgO affect M{sub eff} and α{sub eff} in different degrees. In particular, NiFe/Ru and NiFe/Ru/Pt systems show a large perpendicular surface anisotropy and a significant enhancement of the damping. In contrast, the magnetic properties of CoFeB films do not have a large influence of the NM adjacent material and only CoFeB/Pt systems present an enhancement of α{sub eff}. However, this enhancement is much more pronounced in NiFe/Pt. By the introduction of the NM spacer material, this enhancement is reduced. Furthermore, a difference in symmetry between NiFe/NM/Pt and NiFe/NM systems in the output voltage signal from the ISHE measurements reveals the presence of spin pumping into the Pt layer in all-metallic NiFe/NM/Pt and NiFe/Pt systems.
Simulations of nanoscale Ni/Al multilayer foils with intermediate Ni2Al3 growth
Not Available
Bidirectional threshold switching in engineered multilayer (Cu{sub 2}O/Ag:Cu{sub 2}O/Cu{sub 2}O) stack for cross-point selector application
In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu{sub 2}O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu{sub 2}O) layer by a simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of the Ag was directly confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling. The observed TS occurred because of the spontaneous self-rupturing of the unstable Ag filament that formed in the oxide layer.
Design of smart 3D-digital X-ray microtomographic scanners for non-destructive testing of materials and components of electronic devices with a multilayered structure
The article studies the operating procedures of an X-ray microtomographic scanner and the module of reconstruction and analysis 3D-image of a test sample in particular. An algorithm for 3D-image reconstruction based on image shadow projections and mathematical methods of the processing are described. Chapter 1 describes the basic principles of X-ray tomography and general procedures of the device developed. Chapters 2 and 3 are devoted to the problem of resources saving by the system during the X-ray tomography procedure, which is achieved by preprocessing of the initial shadow projections. Preprocessing includes background noise removing from the images, which reduces the amount of shadow projections in general and increases the efficiency of the group shadow projections compression. Chapter 4 covers general procedures of defect search, which is based on vector analysis principles. In conclusion, the main applications of X-ray tomography are presented.
Anisotropic magnetoresistance and current-perpendicular-to-plane giant magnetoresistance in epitaxial NiMnSb-based multilayers
We fabricated (001)-oriented C1{sub b}-NiMnSb epitaxial films on MgO substrate by a magnetron sputtering system and systematically investigated the structure, magnetic property, and anisotropic magnetoresistance (AMR) effect. NiMnSb film was deposited using a stoichiometric NiMnSb target which has Mn-deficient (Mn ∼ 28.7 at. %) off-stoichiometric composition ratio. We have investigated bulk spin-polarization in NiMnSb films by measuring AMR on the basis of recent study for half-metallic L2{sub 1}-Heusler compounds. Although the negative sign of AMR ratio, which is indicative of half-metallic nature, was observed in the single layer NiMnSb films, the magnitude of AMR ratio (−0.10% at RT) was about half of the largest value reported for half-metallic L2{sub 1}-Heusler compounds. The current-perpendicular-to-plane (CPP) giant magnetoresistance (GMR) devices of NiMnSb/Ag/NiMnSb show MR ratio of 13.2% at 10 K and 4.2% at 300 K, which is higher than the previous result for NiMnSb/Cu/NiMnSb CPP-GMR devices [Caballero et al., J. Magn. Magn. Mater. 198–199, 55 (1999)], but much less than the CPP-GMR using L2{sub 1}-Heusler electrodes. The reduction of intrinsic bulk spin-polarization originating from the Mn-deficiency in NiMnSb layer is expected to be the main reason for small MR values.