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At least 1,405 records · Page 78

All sources NASA NTRS DOE OSTI

DOE OSTI2015

Electrically Tunable Magnetism in Magnetic Topological Insulators

The external controllability of the magnetic properties in topological insulators would be important both for fundamental and practical interests. Here we predict the electric-field control of ferromagnetism in a thin film of insulating magnetic topological insulators. The decrease of band inversion by the application of electric fields results in a reduction of magnetic susceptibility, and hence in the modification of magnetism. Remarkably, the electric field could even induce the magnetic quantum phase transition from ferromagnetism to paramagnetism. We further propose a transistor device in which the dissipationless charge transport of chiral edge states is controlled by an electric field. In particular, the field-controlled ferromagnetism in a magnetic topological insulator can be used for voltage based writing of magnetic random access memories in magnetic tunnel junctions. The simultaneous electrical control of magnetic order and chiral edge transport in such devices may lead to electronic and spintronic applications for topological insulators.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Ultrafast high-endurance memory based on sliding ferroelectrics

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 10 11 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.

Science & Technology - Other Topics↗

DOE OSTI2025

Structural properties and recrystallization effects in ion beam modified B20-type FeGe films

Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions—nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion–antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating the development of methods to systematically tune disorder in this material and understand the ensuing structural properties. To this end, we investigate a route for modifying magnetic properties in FeGe. In particular, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au 4+ ions, which creates a dispersion of amorphized regions that may preferentially host antiskyrmions at densities controlled by the irradiation fluence. To further tune the disorder landscape, we conduct a systematic electron diffraction study with in situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from ~150 to 250°C. Finally, we describe the crystallization kinetics using the Johnson–Mehl–Avrami–Kolmogorov model, finding that the growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate.

36 MATERIALS SCIENCE↗

DOE OSTI2015

Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1975

Main memory unit

The development of a main memory unit (MMU) for the space ultrareliable module computer (SUMC) model HTC is discussed. The design, fabrication, and test of basic memory modules (BMM) which were to be used in the design and construction of the MMU are described. The BMM was designed from state-of-the-art technologies which included large scale integration devices mounted and interconnected on a substrate to form a functional module to be utilized in the MMU development. A SUMC memory system design study is discussed which addressed itself to the BMM design and analysis to be conducted to determine the most efficient organization of the BMM in order to establish such modularity features as: word length expandability without redesign, high reliability, and fault tolerance. One MMU was designed, fabricated, tested, and delivered which will be electrical and mechanically compatible with the hybrid technology computer (HTC) model of the SUMC family of computers. The MMU will contain a storage capacity of 8196 36 bit words which includes a parity bit for each 8 bit byte of data.

Source record↗

DOE OSTI2016

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~10 12 inch –2 ). Here, we systematically show that these devices allow precise engineering of the resistance states, thus enabling large on–off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

36 MATERIALS SCIENCE↗

DOE OSTI2010

Optimization of Ferroelectric Ceramics by Design at the Microstructure Level

Ferroelectric materials show remarkable physical behaviors that make them essential for many devices and have been extensively studied for their applications of nonvolatile random access memory (NvRAM) and high-speed random access memories. Although ferroelectric ceramics (polycrystals) present ease in manufacture and in compositional modifications and represent the widest application area of materials, computational and theoretical studies are sparse owing to many reasons including the large number of constituent atoms. Macroscopic properties of ferroelectric polycrystals are dominated by the inhomogeneities at the crystallographic domain/grain level. Orientation of grains/domains is critical to the electromechanical response of the single crystalline and polycrystalline materials. Polycrystalline materials have the potential of exhibiting better performance at a macroscopic scale by design of the domain/grain configuration at the domain-size scale. This suggests that piezoelectric properties can be optimized by a proper choice of the parameters which control the distribution of grain orientations. Nevertheless, this choice is complicated and it is impossible to analyze all possible combinations of the distribution parameters or the angles themselves. Hence we have implemented the stochastic optimization technique of simulated annealing combined with the homogenization for the optimization problem. The mathematical homogenization theory of a piezoelectric medium is implemented in the finite element method (FEM) by solving the coupled equilibrium electrical and mechanical fields. This implementation enables the study of the dependence of the macroscopic electromechanical properties of a typical crystalline and polycrystalline ferroelectric ceramic on the grain orientation.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Cycle equivalence classes, orthogonal Weingarten calculus, and the mean field theory of memristive systems

Abstract It has been recently noted that for a class of dynamical systems with explicit conservation laws represented via projector operators, the dynamics can be understood in terms of lower dimensional equations. This is the case, for instance, of memristive circuits. Memristive systems are important classes of devices with wide-ranging applications in electronic circuits, artificial neural networks, and memory storage. We show that such mean-field theories can emerge from averages over the group of orthogonal matrices, interpreted as cycle-preserving transformations applied to the projector operator describing Kirchhoff’s laws. Our results provide insights into the fundamental principles underlying the behavior of resistive and memristive circuits and highlight the importance of conservation laws for their mean-field theories. In addition, we argue that our results shed light on the nature of the critical avalanches observed in quasi-two-dimensional nanowires as boundary phenomena.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2023

Microwave-Based Quantum Control and Coherence Protection of Tin-Vacancy Spin Qubits in a Strain-Tuned Diamond-Membrane Heterostructure

Robust spin-photon interfaces in solids are essential components in quantum networking and sensing technologies. Ideally, these interfaces combine a long-lived spin memory, coherent optical transitions, fast and high-fidelity spin manipulation, and straightforward device integration and scaling. The tin- vacancy center (SnV) in diamond is a promising spin-photon interface with desirable optical and spin properties at 1.7 K. However, the SnV spin lacks efficient microwave control, and its spin coherence degrades with higher temperature. In this work, we introduce a new platform that overcomes these challenges—SnV centers in uniformly strained thin diamond membranes. The controlled generation of crystal strain introduces orbital mixing that allows microwave control of the spin state with 99.36(9)% gate fidelity and spin coherence protection beyond a millisecond. Moreover, the presence of crystal strain suppresses temperature-dependent dephasing processes, leading to a considerable improvement of the coherence time up to 223(10) μs at 4 K, a widely accessible temperature in common cryogenic systems. Critically, the coherence of optical transitions is unaffected by the elevated temperature, exhibiting nearly lifetime-limited optical linewidths. Combined with the compatibility of diamond membranes with device integration, the demonstrated platform is an ideal spin-photon interface for future quantum technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2016

Assessing Advanced Technology in CENATE

PNNL's Center for Advanced Technology Evaluation (CENATE) is a new U.S. Department of Energy center whose mission is to assess and facilitate access to emerging computing technology. CENATE is assessing a range of advanced technologies, from evolutionary to disruptive. Technologies of interest include the processor socket (homogeneous and accelerated systems), memories (dynamic, static, memory cubes), motherboards, networks (network interface cards and switches), and input/output and storage devices. CENATE is developing a multi-perspective evaluation process based on integrating advanced system instrumentation, performance measurements, and modeling and simulation. We show evaluations of two emerging network technologies: silicon photonics interconnects and the Data Vortex network. CENATE's evaluation also addresses the question of which machine is best for a given workload under certain constraints. We show a performance-power tradeoff analysis of a well-known machine learning application on two systems.

Tallent, Nathan R.↗

DOE OSTI2012

Data-Intensive Memory-Map simulator and runtime

DI-MMAP is a simulator for modeling the performance of next generation non-volatile random access memory technologies (NVRAM) and a high-perfromance memory-map runtime for the Linux operating system. It is implemented as a device driver for the Linux operating system. It will be used by algorithm designers to unserstand the impact of future NVRAM on their algorithms and will be used by application developers for high-performance access to NVRAM storage.

Essen, B.B.↗

DOE OSTI2024

Arbitrary electro-optic bandwidth and frequency control in lithium niobate optical resonators

In situ tunable photonic filters and memories are important for emerging quantum and classical optics technologies. However, most photonic devices have fixed resonances and bandwidths determined at the time of fabrication. Here we present an in situ tunable optical resonator on thin-film lithium niobate. By leveraging the linear electro-optic effect, we demonstrate widely tunable control over resonator frequency and bandwidth on two different devices. We observe up to ∼50 × tuning in the bandwidth over ∼50 V with linear frequency control of ∼230 MHz/V. We also develop a closed-form model predicting the tuning behavior of the device. This paves the way for rapid phase and amplitude control over light transmitted through our device.

42 ENGINEERING↗

NASA NTRS1973

Electro-optical device for monitoring wire size

Device recognizes variations in wire size and is being used during computer memory-plane fabrication. Decrease in wire diameter, due to stretching, permits removal of wire from memory-plant mold. Monitoring provides means of detecting imperfect wire and permits fabrication of computer memory plane to be stopped prior to its insertion into mold.

Burcher, E. E.↗

NASA NTRS1973

Laser-actuated holographic storage device

Device permits automatic selection of one out of thousands of pages in holographic memory system by using laser beam. In typical operation for 2 to 3 C temperature interval, using dc power supply with no power regulation, holograms were successfully written and erased over 2- by 2-cm area, using 80-mW argon laser beam.

Gange, R. A.↗

NASA NTRS1978

Fault-tolerant building-block computer study

Ultra-reliable core computers are required for improving the reliability of complex military systems. Such computers can provide reliable fault diagnosis, failure circumvention, and, in some cases serve as an automated repairman for their host systems. A small set of building-block circuits which can be implemented as single very large integration devices, and which can be used with off-the-shelf microprocessors and memories to build self checking computer modules (SCCM) is described. Each SCCM is a microcomputer which is capable of detecting its own faults during normal operation and is described to communicate with other identical modules over one or more Mil Standard 1553A buses. Several SCCMs can be connected into a network with backup spares to provide fault-tolerant operation, i.e. automated recovery from faults. Alternative fault-tolerant SCCM configurations are discussed along with the cost and reliability associated with their implementation.

Rennels, D. A.↗

NASA NTRS2001

Radiation dosimetry using three-dimensional optical random access memories

Three-dimensional optical random access memories (3D ORAMs) are a new generation of high-density data storage devices. Binary information is stored and retrieved via a light induced reversible transformation of an ensemble of bistable photochromic molecules embedded in a polymer matrix. This paper describes the application of 3D ORAM materials to radiation dosimetry. It is shown both theoretically and experimentally, that ionizing radiation in the form of heavy charged particles is capable of changing the information originally stored on the ORAM material. The magnitude and spatial distribution of these changes are used as a measure of the absorbed dose, particle type and energy. The effects of exposure on 3D ORAM materials have been investigated for a variety of particle types and energies, including protons, alpha particles and 12C ions. The exposed materials are observed to fluoresce when exposed to laser light. The intensity and the depth of the fluorescence is dependent on the type and energy of the particle to which the materials were exposed. It is shown that these effects can be modeled using Monte Carlo calculations. The model provides a better understanding of the properties of these materials. which should prove useful for developing systems for charged particle and neutron dosimetry/detector applications. c2001 Published by Elsevier Science B.V.

Non-NASA Center↗

DOE OSTI2012

Data-Intensive Memory-Map simulator and runtime

Essen, B. B.↗

DOE OSTI2017

Device and method for treatment of openings in vascular and septal walls

A device, system and method for treatment of an opening in vascular and/or septal walls including patent foramen ovale. The device has wings/stops on either end, an axis core covered in a shape memory foam and is deliverable via a catheter to the affected opening, finally expanding into a vascular or septal opening where it is held in place by the expandable shape memory stops or wings.

47 OTHER INSTRUMENTATION↗