Repetitive autoignition and extinction instability of non-premixed n-dodecane spray cool flames
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Complex-forming reactions comprise a substantial fraction of all important combustion reactions and are central to combustion behavior. Despite being often called “pressure-dependent” reactions, their rate constants depend on not only the pressure but also the composition. While modern combustion codes allow arbitrarily high accuracy in treating pressure dependence, recent work has consistently demonstrated dramatic failures of essentially all available treatments of mixture dependence. In situations where mixture dependence is treated at all, it is inevitably treated through specification of pressure-dependent rate constants for a set of pure bath gases, which are then combined to estimate the rate constant in a mixture via a “mixture rule.” While there had been a generally unquestioning confidence in these mixture rules, they had, in reality, been scarcely tested until the last decade, when comparisons against master equation calculations revealed order-of-magnitude errors for important pressure-dependent reactions. New mixture rules, based on the reduced pressure, have recently been proposed and shown to reproduce master equation calculations for broad classes of complex-forming reactions very accurately. Here, in this work, we present an implementation of one such new mixture rule (“LMR-R”) in Cantera and then use it to enable simulations that use new high-accuracy ab initio data for individual bath gases (for the first time, since codes previously could not accommodate the complex bath gas dependence). Demonstrations focus on combustion of H 2 and NH 3 , where (1) high-accuracy ab initio data are available and (2) the impact is expected to be large due to the high fractions of efficient colliders (e.g., H 2 O and NH 3 ) in the burned and unburned gases. Indeed, we find the impact of this treatment to be substantial and may explain previous modeling difficulties for these important carbon-free fuels, particularly for NH 3 , whose extraordinarily high third-body efficiency (~20) is often omitted from kinetic models.
We describe how performance problems can be “masked,” or not readily evident by several causes: by photovoltaic (PV) system configuration (such as the size of the PV array capacity relative to the size of the inverter and the resultant clipped operating mode); by instrumentation design, installation, and maintenance (such as a misaligned or dirty pyranometer); by contract clauses (when operational availability is transformed to contractual availability, which excludes many factors); and by identified management and operational practices (such as reporting on a portfolio of plants rather than individually). A simple method based on a duration curve is introduced to overcome shortcomings of Performance Ratio based on nameplate capacity and Performance Index based on hourly simulation when quantifying masking effects, and inverter clipping and pyranometer soiling are presented as two examples of the new method. With a better understanding of the non-transparency of masking issues, stakeholders can better interpret performance data and deliver improved AC and DC plant conditions through PV system operation and maintenance (O&M) for improved performance, reduced O&M costs, and a more consistently delivered, and reduced, levelized cost of energy (LCOE).
In this paper, we develop a optimal transmission switching (OTS) heuristic based on DC optimal power flow (OPF) and assess the efficacy of the approach when implemented within AC OPF. Traditional formulations of the OTS problem can result in hundreds or thousands of binary variables for large networks, making the OTS problem challenging to solve on fast timescales even for relatively small networks. Here, we identify which constraints and therefore which variables are constraining the DC OPF feasible region, and rank them based on their impact on the cost function. We develop a heuristic algorithm which iteratively removes these constraints and solves a series of standard DC OPF problems. The heuristic is tested on a variety of PGlib networks and the results show that the algorithm can provide substantial cost decreases without having to solve any mixed integer programs. Additionally, we provide insights about the OTS problem, including identifying scenarios outside congestion where OTS can prove useful. Lastly, the performance of the DC-based heuristic is shown when the line switching decisions are implemented within AC OPF.
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Concentrating Solar Power (CSP) molten-salt central receivers are subject to high, transient incident flux during daily operation. The resulting creep-fatigue damage impacts the receiver’s reliability and restricts the permissible incident flux distribution for a given receiver. This paper aims to reduce CSP plants’ levelized cost of electricity by developing a methodology to predict lifetime and identifies the primary damage mechanism (creep vs fatigue) for any given fluid temperature and temperature gradient. Results are presented in the form of a damage map that serves as a valuable operation guide and design tool. Damage maps can be used to reduce maintenance costs by improving reliability and reduce receiver capital costs by better utilizing the receiver area. FEA simulation and damage modeling of tubes subject to asymmetrical flux conditions is performed in the open-source receiver design tool srlife. Parametric studies are performed over a range of inner tube temperatures and thermal gradients for A230, 316H, 740H, A282, A617, and 800H high temperature alloys. Damage maps are presented for each alloy. A parametric, FEA-based methodology is presented for comparison of fatigue-creep ratios and prediction of tube lifetime based on the critical thermal operating conditions. Fatigue is found to be negligible compared to creep for almost every case. Here, this finding suggests that fatigue effects associated with cloud events are insignificant compared to creep at these high temperature operating conditions. Additionally, lifetime predictions identify thermal conditions where small changes in operating conditions can result in large changes in predicted lifetime.
Phosphorus-doped Czochralski-grown silicon (Cz-Si) has been gaining market share in the large-scale manufacturing of high-efficiency silicon (Si)-based photovoltaic (PV) devices thanks to higher carrier lifetimes than their boron-doped counterpart. However, the fabrication of n-type Cz-Si based solar cells often requires process steps with much higher temperatures and longer times than p-type Silicon. Defect interaction with the high temperatures during such processes tend to be detrimental to the n-type Cz-Si carrier lifetime, therefore limiting the final device efficiency. Short thermal anneals before cell processing, known as Tabula Rasa (TR), have been proposed to mitigate the thermally induced lifetime degradation during n-type Cz-Si solar cell fabrication. This work thoroughly investigates the defects responsible for the lifetime degradation after TR in a N 2 atmosphere treatment. We use temperature-injection-dependent lifetime spectroscopy and the thickness variation method to decouple the effects of TR treatment in the bulk and the surface of the n-type Cz-Si wafers. Using the defect parameter contour mapping (DPCM), we identify the defect energy level (E t ) and the capture cross-section ratio (k) of the most likely process-induced defect, which aligns with previously proposed Si vacancy-associated defects. The DPCM reveals that these vacancy-associated defects have a shallow energy level E t - E v ~0.13 eV and very efficient electron capture cross section k~600. Unexpectedly, the bulk degradation due to vacancy defects in the volume of the wafer, is accompanied by a significant increase in the surface recombination as well. Through evaluating the surface recombination velocity temperature- and injection dependence, we show that after TR, at room temperature and for an injection level of 10 15 cm -3 , in a wafer passivated with a-Si:H(i) the surface recombination dominates the overall lifetime response. Here we hypothesize that the near surface vacancy-associated bulk defects play a role in lowering the electron diffusion current into the a-Si:H(i) from the c-Si(n) reducing the field-effect passivation.