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At least 1,405 records · Page 78

The behaviour of niobium and molybdenum during uni-axial strain loading

The mechanical response of niobium and molybdenum during one dimensional shock loading in the weak shock regime is investigated in terms of the Hugoniot elastic limit (dynamic yield) and spall (tensile) strengths. Results indicate that although both metals have high elastic limits of ca. 2 GPa, their responses are very different. Deformation in the weak shock regime in niobium is controlled by both the motion and generation of dislocations, resulting in high spall (dynamic tensile) strengths and ductility. In contrast, molybdenum has low spall strength and ductility, which suggests lower dislocation mobility in this metal. We have also shown that the strain-rate in the rising part of the shock front is related to the stress amplitude by the fourth power, as first shown by Swegle and Grady. Although we have not been able to elucidate further on the power relation, we believe that the scaling factor A is related to a materials ability to accommodate shock imposed plasticity via slip and dislocation generation. Overall, we have used arguments about the Peierls stress in body centred cubic metals to explain these results, with niobium (low Peierls stress) having a high dislocation mobility, resulting in behaviour showing some similarities to face centred cubic metals. Molybdenum, with its much higher Peierls stress has a much lower dislocation mobility, and hence lower spall strengths and ductility.

36 MATERIALS SCIENCE↗

Eshelby twist and correlation effects in diffraction from nanocrystals

Molecular dynamics simulations were used to model the Eshelby dislocation inside Pd and Ir nanowires and to predict the powder diffraction pattern using the Debye scattering equation. We find that the ideal dislocation solution by Eshelby is in good agreement with the observed twist angle and deviatoric strain, even though it ignores both the splitting of the Eshelby dislocation into two partials and surface stress. Surface stress plays a significant role only for nanorods with small aspect ratio (∼1:1). We also find that Wilson's prediction on the diffraction peak broadening for the Eshelby dislocation is overestimated because it ignores the fact that the Eshelby twist relaxes the deviatoric strain. Moreover, the twist loosens the correlation along the nanorod, causing additional line profile broadening, which is read by diffraction as a decrease of coherent domain size when the total twist angle is bigger than 1.5°. Overall, our findings suggest a novel way to predict and analyze the dislocations as well as the resulting strain fields in the twisted nanocrystalline rods.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effects of aging time and temperature of Fe-1wt.%Cu on magnetic Barkhausen noise and FORC

Magnetic Barkhausen noise (MBN), hysteresis measurements, first order reversal curves (FORC), Vickers microhardness, and Transmission Electron Microscopy (TEM) analyses were performed on Fe-1wt.%Cu (Fe-Cu) samples isothermally aged at 700°C for 0.5 – 25 hours to obtain samples with different sized Cu precipitates and dislocation structures. Fe-Cu is used to simulate the thermal and irradiation-induced defects in copper-containing nuclear reactor materials such as cooling system pipes and pressure vessel materials. The sample series showed an initial increase followed by a decrease in hardness and coercivity with aging time, which is explained by Cu precipitates formation and growth as observed by TEM measurements. Further, the MBN envelope showed a continuous decrease in its magnitude and the appearance of a second peak with aging. Also, FORC diagrams showed multiple peaks whose intensity and location changed for different aging time. The changes in FORC diagrams are attributed to combined changes of the magnetic behavior due to Cu precipitate characteristics and dislocation structure. A second series of samples aged at 850°C, which is above the solid solution temperature of Fe-Cu, was studied to isolate the effects of dislocations. These samples showed a continuous decrease in MBN amplitude with aging time although the coercivity and hardness did not change significantly. The decrease of MBN amplitude and the appearance of the second MBN envelope peak are attributed to the changes in dislocation density and structure. This study shows that the effect of dislocations on MBN and FORC of Fe-Cu materials can vary significantly and should be considered in interpreting magnetic signatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Deformation mechanisms of bent Si nanowires governed by the sign and magnitude of strain

In this study, the deformation mechanisms of bent Si nanowires are investigated at the atomic scale with bending strain up to 12.8%. The sign and magnitude of the applied strain are found to govern their deformation mechanisms, in which the dislocation types (full or partial dislocations) can be affected by the sign (tensile or compressive) and magnitude of the applied strain. In the early stages of bending, plastic deformation is controlled by 60° full dislocations. As the bending increases, Lomer dislocations can be frequently observed. When the strain increases to a significant level, 90° partial dislocations induced from the tensile surfaces of the bent nanowires are observed. This study provides a deeper understanding of the effect of the sign and magnitude of the bending strain on the deformation mechanisms in bent Si nanowires.

36 MATERIALS SCIENCE↗

On the polarization dynamics in the presence of flexoelectricity and morphotropic phase boundary in ferroelectrics

It is shown that anomalous piezoelectric properties of epitaxial nanostructures arise on the morphotropic phase boundary (MPB) due to the strong flexoelectric effect on dislocation walls. The MPB (typical of many materials) exhibits a coexistence of various phases and partition of these phases to minimum sizes. This minimum size l{sub c} (nanoscale) is found using the dislocation theory; it coincides with the distance between individual dislocations in dislocation walls, which is much larger than the Burgers vector b, regardless of the type of crystalline material. The flexoelectric coefficients f are estimated taking into account dimensional relations and experimental data on the rotations of ferroelectric nanodomains in multiferroics. These estimates coincide with classical values. The critical value l{sub c} ~ 10b specifies the measured dependence on the dielectric susceptibility χ{sub e}, f ~ χ{sub e}{sup 1/2}. The quantity χ{sub e} depends on the frequency of the ac electric field applied to a sample and on the dislocation density. The Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}/Ni{sub 0.8}Zn{sub 0.2}Fe{sub 2}O{sub 4} ceramic composite shows typical frequency dispersion of χ{sub e} in a wide frequency range. The frequency dependence of flexoelecric coefficients is shown to reproduce the frequency dependence of permittivity at high frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Breatherlike defects and their dynamics in the one-dimensional roll structure of twisted nematics

The dynamics of the nonsingular defects in the periodic structures of the rolls that appear in π/2-twisted nematic liquid crystals during electroconvection is studied experimentally and theoretically. The roll structures in twisted nematics are characterized by the presence of an axial component of the hydrodynamic flow velocity with opposite directions in neighboring rolls. The critical oscillation frequency of structural defects is quantitatively estimated using a nonlinear equation of motion for roll displacements. It is found that a pair of edge dislocations with topological charges of +1 and–1 nucleates and annihilates periodically during the oscillations of a defect with a nonsingular core. Oscillating defects with a zero topological charge is shown to correspond to the solution of the sine-Gordon equation in the form of standing breathers. Asymmetry is detected in the full oscillation cycle of a breather defect, and it is related to the twist symmetry of a twist nematic. This asymmetry is taken into account as effective anisotropic friction. The behavior of a breather on a trap, namely, a classical defect (dislocation), is investigated. Dislocation motion is shown to be anisotropic in the oscillation cycle: in one direction, a dislocation moves regularly; in the second phase, the transition into the initial state proceeds via the decay of the breather into a dipole pair of dislocations of opposite signs followed by their annihilation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of copper on the recombination activity of extended defects in silicon

The effect of copper atoms introduced by high-temperature diffusion on the recombination properties of dislocations and dislocation trails in p-type single-crystal silicon is studied by the electron-beam-induced current technique. It is shown that, in contrast to dislocations, dislocation trails exhibit an increase in recombination activity after the introduction of copper. Bright contrast appearance in the vicinity of dislocation trails is detected after the diffusion of copper and quenching of the samples. The contrast depends on the defect density in these trails.

36 MATERIALS SCIENCE↗

Visualization and quantification of deformation processes controlling the mechanical response of alloys in aggressive environments

The overall objective of this program was to develop the technique of electron tomography for studies of defects and to couple it with real time dynamic experiments such that four-dimensional (time and three spatial dimensions) characterization of dislocation interactions with defects is feasible and apply it to discovery of the fundamental unit processes of dislocation-defect interactions in metallic systems. Strategies to overcome the restrictions normally associated with electron tomography and to make it practical within the constraints of conducting a dynamic experiment in the transmission electron microscope were developed. These methods were used to determine the mechanism controlling the transfer of slip across grain boundaries in FCC and HCP metals, dislocation precipitate interactions in Al alloys, and dislocation-dislocation interactions in HCP Ti. In addition, preliminary investigations of slip transfer across cube-on-cube and incoherent twin interfaces in a multi-layered system, thermal stability of grains in nanongrained Ni and Fe, and on corrosion of Fe films were conducted.

36 MATERIALS SCIENCE↗

Collaborative Research: The Role of Grain Boundary Structure and Chemistry in Materials Failure

Throughout the one year duration of this award significant progress was made in understanding the effect of grain boundaries in polycrystalline materials. The starting point of this work is that each grain boundary can be characterized by an interface energy and respective interface parameter, which depend on the boundary chemical composition and structure. As this is a new point of view for treating grain boundaries, an interdisciplinary approach was followed to prove the existence of such interface terms. Throughout the project, hence, theory, experiments and simulations were used. Molecular dynamics and dislocation density-function dynamics were performed to understand dislocation-grain boundary interactions in pure Al crystalline materials, as potentials for Al are well established. The formation of dislocation pile-ups was observed and the strain profiles were in agreement with interfacial gradient plasticity, which is the theoretical framework that allows the introduction of mechanically induced interface energies. After verifying numerically the existence of mechanically induced interface energies, nanoindentation experiments were performed near grain boundaries of Fe-Si crystals that contained three grain boundaries. By indenting in close proximity to the boundary these experiments allowed for measuring the critical stress at which deformation was transmitted across the boundary to the adjacent grains, either through dislocation transmission or absorption and subsequent emission. This critical stress, also termed grain boundary yield stress, was in accordance with the value predicted by interfacial gradient plasticity, further verifying that mechanically induced interface energies can help define the material response. In the Fe-Si crystals the Si content was kept constant at 3wt%, but three specimen were considered each of which was characterized by a different misorientation at the grain boundary. By relating the experiments with the analytical gradient plasticity expressions it was possible to obtain first estimates for the interface parameter as ~200N/m. This value was not proportional to the misorientation angle, but depended also on the grain boundary plane. The continuation of this project is performing more detailed experiments on additional Fe-Si and Fe-C systems (both nanoindentation and in-situ transmission electron microscopy) to further understand the physical origin of such interface parameters. Furthermore, molecular dynamics nanoindentation simulations are also performed on similar systems to better understand the dislocation grain boundary interactions.

36 MATERIALS SCIENCE↗

The influences of temperature and microstructure on the tensile properties of a CoCrFeMnNi high-entropy alloy

An equiatomic CoCrFeMnNi high-entropy alloy, which crystallizes in the face-centered cubic (FCC) crystal structure, was produced by arc melting and drop casting. The drop-cast ingots were homogenized, cold rolled, and recrystallized to obtain single-phase microstructures with three different grain sizes in the range 4~160 m. Quasi-static tensile tests were then performed at temperatures between 77 and 1073 K. Yield strength, ultimate tensile strength and ductility all increased with decreasing temperature. During the initial stages of plasticity (up to ~2% strain), deformation occurs by planar dislocation glide on the normal FCC slip system {111} 110 at all temperatures and grain sizes investigated. Undissociated 1/2 110 dislocations were observed, as were numerous stacking faults, which imply the dissociation of several of these dislocations into 1/6 112 Shockley partials. At later stages ( 20% strain), nanoscale deformation twins were observed after interrupted tests at 77 K, but not in specimens tested at room temperature where plasticity occurred exclusively by dislocations which organized into cells. Deformation twinning, by continually decreasing the mean free path of dislocations during tensile testing, produces a high degree of work hardening and a significant increase in the ultimate tensile strength. This increased work hardening prevents the early onset of necking instability and is a reason for the enhanced ductility observed at 77 K. A second way in which twinning can contribute to ductility is by providing an additional deformation mode to accommodate plasticity. However, it cannot explain the increase in yield strength with decreasing temperature in our high-entropy alloy since twinning was not observed in the early stages of plastic deformation. Since strong temperature dependencies of yield strength are also seen in binary FCC solid solution alloys, it may be an inherent solute effect, which needs further study.

Deformation twinning↗

Multiscale analysis of nanoindentation-induced defect structures in gum metal

Using ex-situ transmission electron microscopy and the recently developed nanoprobe diffraction (NPD) technique, we characterize a nanoindented solution treated gum metal. Lattice rotations are resolved at a 1.2 nm length-scale and shown to be continuous within the nanoindentation pit; further, it is revealed that these can be accommodated by a reasonable number of geometrically necessary dislocations at a density of ~10 15 /m 2 . We furthermore provide direct evidence that dislocations within the nanoindent, rather than secondary phase nanoparticles, can serve as potent barriers to dislocation motion. We also demonstrate that plasticity in these alloys under nanoindentation can be accommodated solely by dislocation nucleation and propagation, with no competing deformation mechanisms present. Conventional transmission electron microscopy and “ g•b ” analysis reveal the presence of dislocations on &lang;$ \bar{1}11 $&rang;{110} slip systems and highly localized plastic deformation in the form of shear bands on <111>{$ \bar{1} \bar{1}2 $} slip systems, similar to previously observed “giant faults”.

36 MATERIALS SCIENCE↗

In Situ Micro-Pillar Compression to Examine Radiation-Induced Hardening Mechanisms of FeCrAl Alloys

Here, the effects of 5 MeV Fe 2+ ion irradiation at 300°C on the microstructure evolution and deformation behavior of a FeCrAl C26M alloy are presented. It has been found that dislocation loop density increases an order of magnitude from 1 dpa to 16 dpa irradiations, whereas, the dislocation loop size saturates with increasing damage. Micropillars, 600 nm in diameter and 1.3 µm in height, were fabricated and compressed inside grains with <001>, <011> and <111> crystallographic orientations, respectively. {112} <111> has been identified as the primary slip system in both unirradiated and irradiated alloy. The increase in yield stress after irradiation is observed with measurable variation along <001> and <011> vs. along <111>. By applying the Orowan dispersed barrier model, the increase of yield stress is found mainly due to the slip resistance of radiation generated defect loops. Detailed transmission electron microscopy (TEM) studies were performed to quantify the Burgers vector and the distribution of irradiation induced dislocations at elevated strains. It is revealed that localized shear instability is caused by avalanche slip events of ½<111> dislocations gliding out of tested pillars. Simultaneously, a large number of sessile/immobile <100> dislocations formed in the vicinity of slip band, leading to the hardening at elevated strains.

36 MATERIALS SCIENCE↗

Characterization and visualization of grain boundary disconnections

We introduce a method to visualize dislocations along grain boundaries at the atomic level. It uses an atomic-level Nye tensor, representing the dislocation density. To calculate the Nye tensor at grain boundaries, we extend the Hartley-Mishin strain gradient calculation to the displacement shift complete lattice. We show that the method is effective in visualizing disconnections and the dislocation content of grain boundary phase junctions in body-centered cubic tungsten, as well as face-centered cubic copper. In addition, we use the method to characterize the morphology of a two-dimensional grain boundary phase nucleus in a symmetric tilt grain boundary in tungsten. This method can be applied to both bulk dislocations and grain boundary disconnections, which makes it ideal for studying the interactions and reactions of bulk dislocations with grain boundaries, and grain boundary disconnections.

36 MATERIALS SCIENCE↗

Kink mechanism in Cu/Nb nanolaminates explored by $\mathcal{in}$ $\mathcal{situ}$ pillar compression

We report Nano metallic laminates (NMLs) exhibit different failure modes depending on the loading conditions due to their mechanical anisotropies. Kinking is a typical failure mode in many NMLs compressed along a layer-parallel direction. However, a detailed description of the microstructure evolution during kink band (KB) formation and an in-depth understanding of the formation mechanisms are lacking. In this work, the KB process is investigated in Cu/Nb NMLs by in situ micro pillar compression in the scanning electron microscope (SEM) along a layer-parallel direction. Post-mortem S/TEM and transmission Kikuchi diffraction (TKD) analyses show that kink banding leads to significant microstructure changes characterized by an accumulation of geometrically necessary dislocations (GNDs) and of tilt geometrically necessary boundaries (GNBs) near KB boundaries (KBBs). The distinct microstructure evolution implies that KB formation is facilitated by the inhomogeneous microstructures resulting in constrained deformation modes. Specifically, dislocations active on slip planes nearly parallel to the interfaces make a major contribution to kink evolution after the onset of kinking. Once layer-parallel slip systems are activated, preexisting lattice dislocations and dislocations nucleating from interfaces will accumulate as GNDs near KBBs via the stochastic storage of lattice dislocations that have certain Burgers vectors. GNDs can further transform into GNBs via cross-slip and climb driven processes near the KBB. Furthermore, GNBs near KBBs can grow by incorporating more GNDs or by coalescence to accommodate the KB evolution. We further hypothesize that microstructural perturbations and their ensuing stresses can initiate KB formation in Cu/Nb NMLs.

36 MATERIALS SCIENCE↗

Additively-manufactured Al-0.3Zr-0.2Ce-0.2Cu alloy with high creep resistance and electrical conductivity

Here, a new, solute-lean Al-0.3Zr-0.2Ce-0.2Cu (wt.%) alloy is developed for additive manufacturing that overcomes the classical tradeoff between conductivity and creep resistance. The rapid-cooling-enabled supersaturation of Zr, and its uniform distribution in α-Al matrix, along with formation of submicron (Ce,Cu)-rich intermetallic particles on solidification lead to unusually high creep resistance at 200 °C. Near-zero secondary creep rates are achieved up to the alloy yield stress (YS) of 65 MPa at 200 °C in as-fabricated state. The Zr-solute-induced dislocation-climb suppression mechanism underlying this improvement also restricts dynamic recovery above YS, as noted from appreciable primary creep and its transitioning to near-zero secondary creep rates. A combination of relatively coarse, epitaxially-grown α-Al grains, low Zr concentration in α-Al, and the impurity-scavenging effect of Ce to purify α-Al matrix produces high electrical conductivity of ∼48 %IACS. Aging precipitation of L1 2 -Al 3 Zr nanoprecipitates doubles the YS (to ∼150 MPa) at room temperature and increases alloy conductivity to ∼58 %IACS, but loss of solid-solution Zr out of α-Al matrix leads to activation of dislocation climb, degrading the creep properties as compared to the supersaturated Al-Zr solid solution in the as-fabricated state. Compared to L1 2 -Al 3 Zr nanoprecipitates, submicron (Ce,Cu)-rich particles formed on solidification are more effective at impeding dislocation climb, producing a threshold stress for dislocation creep of ∼ 50 MPa at 200 °C. The new alloy design concepts, especially solute-induced dislocation-climb suppression for creep resistance, explored here may pave way for the design of new metallic alloys for thermal/electrical conductors and other high-temperature applications.

Additive Manufacturing↗

Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

The effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and electron energy loss spectroscopy (EELS). Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed.

36 MATERIALS SCIENCE↗

Effect of slip transmission at grain boundaries in Al bicrystals

In this work, the effect of slip transfer on the deformation mechanisms of Al bicrystals was explored using a rate-dependent dislocation-based crystal plasticity model. Three different types of grain boundaries (GBs) were included in the model by modifying the rate of dislocation accumulation near the GB in the Kocks-Mecking law, leading to fully-opaque (dislocation blocking), fully-transparent and partially-transparent GBs. In the latter, slip transmission is only allowed in pairs of SS in neighbor grains that are suitably oriented for slip transfer according to the Luster-Morris parameter. Modifications of the GB character led to important changes in the deformation mechanisms at the GB. In general, bicrystals with fully-opaque boundaries showed an increase in the dislocation density near the GB, which was associated with an increase in the Von Mises stress. In contrast, the dislocation pile-ups and the stress concentration were less pronounced in the case of partially-transparent boundaries as the slip in one grain can progress into the next grain with some degree of continuity. No stress concentrations were found at these boundaries for fully-transparent boundaries, and there was continuity of strain across the boundary, which is not typical of most experimentally observed GBs. Simulations of ideal bicrystals oriented for favorable slip transfer on the most highly favored slip system in grains with high Schmid factors for slip transfer depends on the number of active SS in operation in the neighborhood and that most boundaries will lead to nearly opaque conditions while some boundaries will be transparent. Finally, the model was applied to a particular experimentally observed GB in which slip transfer was clearly operating indicating that the model predicted a nearly transparent GB.

36 MATERIALS SCIENCE↗

Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals

Here, several 4° off-axis 4H-SiC wafers with several hundred microns of initial-stage growth by PVT method are investigated by Synchrotron Monochromatic Beam X-ray Topography (SMBXT). Defect behavior across the seed/newly grown layer interface are demonstrated. Comparison of early stage grown layers to seed sample indicates generation of threading edge dislocation (TED) and threading screw dislocation (TSD)/ threading mixed dislocation (TMD) pairs at the interface while most basal plane dislocations (BPDs) are deflected into TEDs. The (0001) facet of the crystal is already formed at early stage growth at the edge of the wafer and high nitrogen incorporation in facet leads to conditions favorable for nucleation and glide of Shockley/double Shockley faults with layers of 3C-SiC deposited on facet acting as nuclei. Unique-shaped dislocations are observed at early stage growth, which are caused by deflection of TSDs/TMDs and TEDs by macrosteps near the periphery of the sample and the subsequent glide of the a components. The effect of the quality of the seed surface before growth is manifested as randomly oriented arrays of pairs of TEDs and TSDs/TMDs on the as grown surface resulting from residual surface damage from scratches.

36 MATERIALS SCIENCE↗