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At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Cell performance and defect behavior in proton-irradiated lithium-counterdoped n(+)p silicon solar cells

Lithium-counterdoped n(+)p silicon solar cells were irradiated by 10-MeV protons, and their performance was determined as a function of fluence. It was found that the cell with the highest lithium concentration exhibited the higher radiation resistance. Deep-level transient spectroscopy studies of deep-level defects were used to identify two lithium-related defects. Defect energy levels obtained after the present 10-MeV irradiations were found to be markedly different than those observed after previous 1-MeV electron irradiations. However, the present DLTS data are consistent with previous suggestion by Weinberg et al. (1984) of a lithium-oxygen interaction which tends to inhibit formation of an interstitial boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1988

Fatigue behavior of axial and pressure cycled butt and girth welds containing defects

This paper presents the results of a study directed at developing a data base for establishing fitness-for-purpose defect acceptance criteria for welds with defects. The study focused on A106 Grade B steel pipe. Data are presented for flat plate, wall segment, and vessel specimens and actual pipe sections containing either artificial or natural planar or volumetric defects. Defect acceptance criteria developed from the test data are discussed.

Leis, Brian N.↗
NASA NTRS1989

Metastable defects in Be-doped Al(x)Ga(1-x)As

Deep-level transient spectroscopy has been used to study metastable defects in Be-doped Al(x)Ga(1-x)As grown by molecular-beam epitaxy. The metastability manifests itself by the appearance of different spectra depending upon whether the sample is cooled from a high temperature with zero bias or a reverse bias applied to it. The defects are found in concentrations of 10 to the 15th/cu cm in a sample doped with 10 to the 18th Be/cu cm and in much lower concentrations in a 10 to the 17th Be/cu cm sample. Isochronal annealing experiments indicate that the defect is multistable and that it is best modeled as a mobile interstitial which can reside at several sites near acceptor. The activation energies for these defects are between 0.2 and 0.5 eV above the valence band.

Magno, R.↗
NASA NTRS1989

Test Data of Flow Field of Shuttle SRM Nozzle Joint with Bond Defects, Using Unheated Air

The nozzle-to-case joint on the Shuttle SRM (as redesigned after the Challenger accident) features an adhesive sealant filling and bonding the joint, with a wiper O-ring to prevent the adhesive from reaching and disabling the closure O-ring. Flawless implementation of that joint design would ensure that hot, corrosive propellant combustion gases never reach the closure O-ring. However, understanding the flow field related to bonding defects is prudent. A comprehensive test program was conducted to quantify such flow fields and associated heating environments. A two-dimensional, full-scale model represented 65 inches of the nozzle joint, using unheated air as the test medium, in a blowdown mode. Geometry variations modeled RSRM assembly tolerances, and two types of bonding defects: pullaways and blowholes. A range of the magnitude of each type defect was tested. Also a range of operational parameters was tested, representative of the RSRM flow environment, including duplication of RSRM Mach and Reynolds numbers. Extensive instrumentation was provided to quantify pressures, heat rates, and velocities. The resulting data established that larger geometric defects cause larger pressure and larger heating, at the closure O-ring region. Velocity trends were not so straight-forward. Variations in assembly tolerances did not generally affect flow fields or heating. Operational parameters affected flow fields and heating as might be expected, increasing density or velocity increased heating. Complete details of this test effort are presented.

Hair, Leroy M.↗
NASA NTRS1990

Effective actions for bosonic topological defects

A gauge field theory is considered which admits p-dimensional topological defects, expanding the equations of motion in powers of the defect thickness. In this way an effective action and effective equation of motion is derived for the defect in terms of the coordinates of the p-dimensional worldsurface defined by the history of the core of the defect.

Gregory, Ruth↗
NASA NTRS1991

Atomic oxygen interaction with solar array blankets at protective coating defect sites

Atomic oxygen in the low-Earth-orbital environment oxidizes SiOx protected polyimide Kapton solar array blankets at sites which are not protected such as pin windows or scratches in the protective coatings. The magnitude and shape of the atomic oxygen undercutting which occurs at these sites is dependent upon the exposure environment details such as arrival direction and reaction probability. The geometry of atomic oxygen undercutting at defect sites exposed to atomic oxygen in plasma asher was used to develop a Monte Carlo model to simulate atomic oxygen erosion processes at defect sites in protected Kapton. Comparisons of Monte Carlo predictions and experimental results are presented for plasma asher atomic oxygen exposures for large and small defects as well as for protective coatings on one or both sides of Kapton. The model is used to predict in-space exposure results at defect sites for both directed and sweeping atomic oxygen exposure. A comparison of surface textures predicted by the Monte Carlo model and those experimentally observed from both directed space ram and laboratory plasma asher atomic oxygen exposure indicate substantial agreement.

Banks, Bruce A.↗
NASA NTRS1990

Defect sensitivity of filament-wound structures in compression

Compression testing of 12-ply graphite/bismaleimide laminated plates with induced and natural defects is discussed, and emphasis is placed on resultant changes in strength and stiffness. Ply drops, ply cuts, and fiber crossovers are studied by comparison with a quasi-isotropic control group. It is observed that, as expected, failure initiates at the defects and progresses via delamination, sublaminate buckling, angle-ply cracking, and longitudinal ply failure. The ultimate stress is reduced by approximately 40 percent for all types of defects except the unsymmetrical cut-ply specimens which averages a 54-percent reduction. The average stiffness reduction of 10 percent is observed for specimens with induced defects. Fiber crossovers are found to reduce the laminate strength and stiffness significantly.

Jensen, David W.↗
NASA NTRS1992

Defect behavior, carrier removal and predicted in-space injection annealing of InP solar cells

Defect behavior, observed by deep level transient spectroscopy (DLTS), is used to predict carrier removal and the effects of simultaneous electron irradiation and injection annealing of the performance of InP solar cells. For carrier removal, the number of holes trapped per defect is obtained from measurements of both carrier concentrations and defect concentrations during an isochronal anneal. In addition, from kinetic considerations, the behavior of the dominant defect during injection annealing is used to estimate the degradation expected from exposure to the ambient electron environment in geostationary orbit.

Weinberg, I.↗
NASA NTRS1992

Investigations on entropy layer along hypersonic hyperboloids using a defect boundary layer

A defect approach coupled with matched asymptotic expansions is used to derive a new set of boundary layer equations. This method ensures a smooth matching of the boundary layer with the inviscid solution. These equations are solved to calculate boundary layers over hypersonic blunt bodies involving the entropy gradient effect. Systematic comparisons are made for both axisymmetric and plane flows in several cases with different Mach and Reynolds numbers. After a brief survey of the entropy layer characteristics, the defect boundary layer results are compared with standard boundary layer and full Navier-Stokes solutions. The entropy gradient effects are found to be more important in the axisymmetric case than in the plane one. The wall temperature has a great influence on the results through the displacement effect. Good predictions can be obtained with the defect approach over a cold wall in the nose region, with a first order solution. However, the defect approach gives less accurate results far from the nose on axisymmetric bodies because of the thinning of the entropy layer.

Brazier, J. P.↗
NASA NTRS1992

Giant suppression of flux-flow resistivity in heavy-ion irradiated Tl2Ba2Ca2Cu3O10 films - Influence of linear defects on vortex transport

A large shift of the onset of flux-flow resistivity and the irreversibility line H(irr)(T) to higher temperatures is observed in Tl2Ba2Ca2Cu3O10 films containing linear defects created by Ag(+21) ion irradiation. The H(irr)(T), which has a characteristic L shape in highly anisotropic Tl and Bi based cuprates, becomes more like that of YBa2Cu3O7 in the presence of these defects. The Jc at 77 K also shows a large increase as a result of flux localization at the defects. The transport data indicate that in the H-T plane above H(irr)(T) of the unirradiated material, an ensemble of unoccupied defects is required for effective pinning of each flux line in the system.

Budhani, R. C.↗
NASA NTRS1994

A scanning defect mapping system for semiconductor characterization

We have developed an optical scanning system that generates maps of the spatial distributions of defects in single and polycrystalline silicon wafers. This instrument, called Scanning Defect Mapping System, utilizes differences in the scattering characteristics of dislocation etch pits and grain boundaries from a defect-etched sample to identify and count them. This system simultaneously operates in the dislocation mode and the grain boundary (GB) mode. In the 'dislocation mode,' the optical scattering from the etch pits is used to statistically count dislocations, while ignoring the GB's. Likewise, in the 'grain boundary mode' the system only recognizes the local scattering from the GB's to generate grain boundary distributions. The information generated by this instrument is valuable for material quality control, identifying mechanisms of defect generation and the nature of thermal stresses during the crystal growth, and the solar cell process design.

Sopori, Bushnan L.↗
NASA NTRS1995

Electronic characterization of defects in narrow gap semiconductors: Comparison of electronic energy levels and formation energies in mercury cadmium telluride, mercury zinc telluride, and mercury zinc selenide

The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity.

Patterson, James D.↗
NASA NTRS1997

Prediction and Verification of Ductile Crack Growth from Simulated Defects in Strength Overmatched Butt Welds

Defects that develop in welds during the fabrication process are frequently manifested as embedded flaws from lack of fusion or lack of penetration. Fracture analyses of welded structures must be able to assess the effect of such defects on the structural integrity of weldments; however, the transferability of R-curves measured in laboratory specimens to defective structural welds has not been fully examined. In the current study, the fracture behavior of an overmatched butt weld containing a simulated buried, lack-of-penetration defect is studied. A specimen designed to simulate pressure vessel butt welds is considered; namely, a center crack panel specimen, of 1.25 inch by 1.25 inch cross section, loaded in tension. The stress-relieved double-V weld has a yield strength 50% higher than that of the plate material, and displays upper shelf fracture behavior at room temperature. Specimens are precracked, loaded monotonically while load-CMOD measurements are made, then stopped and heat tinted to mark the extent of ductile crack growth. These measurements are compared to predictions made using finite element analysis of the specimens using the fracture mechanics code Warp3D, which models void growth using the Gurson-Tvergaard dilitant plasticity formulation within fixed sized computational cells ahead of the crack front. Calibrating data for the finite element analyses, namely cell size and initial material porosities are obtained by matching computational predictions to experimental results from tests of welded compact tension specimens. The R-curves measured in compact tension specimens are compared to those obtained from multi-specimen weld tests, and conclusions as to the transferability of R-curves is discussed.

Nishioka, Owen S.↗
NASA NTRS1997

Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

Tabib-Azar, Massood↗
NASA NTRS1999

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Neudeck, Philip G.↗
NASA NTRS2000

Autogeneous Friction Stir Weld Lack-of-Penetration Defect Detection and Sizing Using Directional Conductivity Measurements with MWM Eddy Current Sensor

Al 2195-T8 plate specimens containing Friction Stir Welds (FSW), provided by Lockheed Martin, were inspected using directional conductivity measurements with the MWM sensor. Sensitivity to lack-of-penetration (LOP) defect size has been demonstrated. The feature used to determine defect size was the normalized longitudinal component of the MWM conductivity measurements. This directional conductivity component was insensitive to the presence of a discrete crack. This permitted correlation of MWM conductivity measurements with the LOP defect size as changes in conductivity were apparently associated with metallurgical features within the first 0.020 in. of the LOP defect zone. Transverse directional conductivity measurements also provided an indication of the presence of discrete cracks. Continued efforts are focussed on inspection of a larger set of welded panels and further refinement of LOP characterization tools.

Goldfine, Neil↗
NASA NTRS2002

Phase Sensitive X-Ray Diffraction Imaging of Defects in Biological Macromolecular Crystals

Characterization of defects and/or disorder in biological macromolecular crystals presents much greater challenges than in conventional small-molecule crystals. The lack of sufficient contrast of defects is often a limiting factor in x-ray diffraction topography of protein crystals. This has seriously hampered efforts to understand mechanisms and origins of formation of imperfections, and the role of defects as essential entities in the bulk of macromolecular crystals. In this report, we employ a phase sensitive x-ray diffraction imaging approach for augmenting the contrast of defects in protein crystals.

Hu, Z. W.↗
NASA NTRS2004

Defect Clustering and Nano-phase Structure Characterization of Multicomponent Rare Earth-Oxide-Doped Zirconia-Yttria Thermal Barrier Coatings

Advanced thermal barrier coatings (TBCs) have been developed by incorporating multicomponent rare earth oxide dopants into zirconia-based thermal barrier coatings to promote the creation of the thermodynamically stable, immobile oxide defect clusters and/or nanophases within the coating systems. In this paper, the defect clusters, induced by Nd, Gd, and Yb rare earth dopants in the zirconia-yttria thermal barrier coatings, were characterized by high-resolution transmission electron microscopy (TEM). The TEM lattice imaging, selected area diffraction (SAD), and electron energy-loss spectroscopy (EELS) analyses demonstrated that the extensive nanoscale rare earth dopant segregation exists in the plasma-sprayed and electron-physical-vapor-deposited (EB PVD) thermal barrier coatings. The nanoscale concentration heterogeneity and the resulting large lattice distortion promoted the formation of parallel and rotational defective lattice clusters in the coating systems. The presence of the 5-to 100-nm-sized defect clusters and nanophases is believed to be responsible for the significant reduction of thermal conductivity, improved sintering resistance, and long-term high temperature stability of the advanced thermal barrier coating systems.

Zhu, Dongming↗