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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Towards understanding intrinsic degradation and breakdown mechanisms in SiOCH low-k dielectrics

The degradation and breakdown mechanisms of a SiOCH low-k material with k = 2.3 (25% porosity) and thicknesses ranging from 90 nm to 20 nm were investigated. By combining the time dependent dielectric breakdown data at positive/negative bias stress with the thickness scaling results, dielectric failure is proven to be intrinsic and not influenced by copper drift or metal barrier deposition induced dielectric damage. It is shown that stress induced leakage current (SILC) can be used as a measure of dielectric degradation. Therefore, low field lifetimes can be safely estimated using SILC extrapolation. Based on our results, both the impact damage model and the power law model have a good accuracy for low field lifetime prediction. Recovery and anneal experiments are used to study the physical nature causing the observed negative flatband voltage shifts in our metal-insulator-semiconductor planar capacitor structures, where hydrogen induced unstable fast and slow donor type interface states are hypothesized to be the root cause of the observed shifts. We suggest that atomic hydrogen is released from the dielectric during electron injection and migrates to the interfacial region. Our model is further supported by an observed irreversible SILC change during the recovery and anneal studies. The degradation mechanism proposed in this work, supported by the low field lifetime data, provides a feasible explanation for intrinsic low-k dielectric failure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Tracing the transition of a macro electron shuttle into nonlinear response

We present a study on a macroscopic electron shuttle in the transition from linear to nonlinear response. The shuttle consists of a classical mechanical pendulum situated between two capacitor plates. The metallic pendulum enables mechanical transfer of electrons between the plates, hence allowing to directly trace electron shuttling in the time domain. By applying a high voltage to the plates, we drive the system into a controlled nonlinear response, where we observe period doubling.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Potential up-scaling of inkjet-printed devices for logical circuits in flexible electronics

Inkjet Technology is often mis-believed to be a deposition/patterning technology which is not meant for high fabrication throughput in the field of printed and flexible electronics. In this work, we report on the 1) printing, 2) fabrication yield and 3) characterization of exemplary simple devices e.g. capacitors, organic transistors etc. which are the basic building blocks for logical circuits. For this purpose, printing is performed first with a Proof of concept Inkjet printing system Dimatix Material Printer 2831 (DMP 2831) using 10 pL small print-heads and then with Dimatix Material Printer 3000 (DMP 3000) using 35 pL industrial print-heads (from Fujifilm Dimatix). Printing at DMP 3000 using industrial print-heads (in Sheet-to-sheet) paves the path towards industrialization which can be defined by printing in Roll-to-Roll format using industrial print-heads. This pavement can be termed as 'Bridging Platform'. This transfer to 'Bridging Platform' from 10 pL small print-heads to 35 pL industrial print-heads help the inkjet-printed devices to evolve on the basis of functionality and also in form of up-scaled quantities. The high printed quantities and yield of inkjet-printed devices justify the deposition reliability and potential to print circuits. This reliability is very much desired when it comes to printing of circuits e.g. inverters, ring oscillator and any other planned complex logical circuits which require devices e.g. organic transistors which needs to get connected in different staged levels. Also, the up-scaled inkjet-printed devices are characterized and they reflect a domain under which they can work to their optimal status. This status is much wanted for predicting the real device functionality and integration of them into a planned circuit.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor

Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Spectroscopic and electrical calculation of band alignment between atomic layer deposited SiO{sub 2} and β-Ga{sub 2}O{sub 3} (2{sup ¯}01)

The energy band alignment between atomic layer deposited (ALD) SiO{sub 2} and β-Ga{sub 2}O{sub 3} (2{sup ¯}01) is calculated using x-ray photoelectron spectroscopy and electrical measurement of metal-oxide semiconductor capacitor structures. The valence band offset between SiO{sub 2} and Ga{sub 2}O{sub 3} is found to be 0.43 eV. The bandgap of ALD SiO{sub 2} was determined to be 8.6 eV, which gives a large conduction band offset of 3.63 eV between SiO{sub 2} and Ga{sub 2}O{sub 3}. The large conduction band offset makes SiO{sub 2} an attractive gate dielectric for power devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Characteristics of a molybdenum X-pinch X-ray source as a probe source for X-ray diffraction studies

X-ray emission from a molybdenum X-pinch has been investigated as a potential probe for the high pressure states made in dynamic compression experiments. Studies were performed on a novel 300 kA, 400 ns generator which coupled the load directly to a low inductance capacitor and switch combination. The X-pinch load consisted of 4 crossed molybdenum wires of 13 μm diameter, crossed at an angle of 62°. The load height was 10 mm. An initial x-ray burst generated at the wire crossing point, radiated in the soft x-ray range (hυ < 10 keV). This was followed, 2–5 ns later, by at least one harder x-ray burst (hυ > 10 keV) whose power ranged from 1 to 7 MW. Time integrated spectral measurements showed that the harder bursts were dominated by K-alpha emission; though, a lower level, wide band continuum up to at least 30 keV was also present. Initial tests demonstrated that the source was capable of driving Laue diffraction experiments, probing uncompressed samples of LiF and aluminium.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Full-range electrical characteristics of WS{sub 2} transistors

We fabricated transistors formed by few layers to bulk single crystal WS{sub 2} to quantify the factors governing charge transport. We established a capacitor network to analyze the full-range electrical characteristics of the channel, highlighting the role of quantum capacitance and interface trap density. We find that the transfer characteristics are mainly determined by the interplay between quantum and oxide capacitances. In the OFF-state, the interface trap density (<10{sup 12} cm{sup –2}) is a limiting factor for the subthreshold swing. Furthermore, the superior crystalline quality and the low interface trap density enabled the subthreshold swing to approach the theoretical limit on a back-gated device on SiO{sub 2}/Si substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Maintenance and operation procedure, and feedback controls of the J-PARC RF-driven H{sup −} ion source

In order to satisfy the Japan Proton Accelerator Research Complex (J-PARC) second stage requirements of an H{sup −} ion beam of 60mA within normalized emittances of 1.5πmm•mrad both horizontally and vertically, a flat top beam duty factor of 1.25% (500μs×25Hz) and a life-time of longer than 1month, the J-PARC cesiated RF-driven H{sup −} ion source was developed by using an internal-antenna developed at the Spallation Neutron Source (SNS). The maintenance and operation procedure to minimize the plasma chamber (PCH) replacement time on the beam line, which is very important to maximize the J-PARC beam time especially for an antenna failure, is presented in this paper. The PCH preserved by filling argon (Ar) gas inside after pre-conditioning including pre-cesiation to produce the required beam at a test-stand successfully produced the required beam on the beam line with slight addition of cesium (Cs). The methods of the feedback controls of a 2MHz-RF-matching, an H{sup −} ion beam intensity and the addition of Cs are also presented. The RF-matching feedback by using two vacuum variable capacitors (VVCs) and RF-frequency shift produced the almost perfect matching with negligibly small reflected RF-power. The H{sup −} ion beam intensity was controlled within errors of ±0.1mA by the RF-power feedback. The amount of Cs was also controlled by remotely opening a Cs-valve to keep the RF-power lower than a settled value.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Study on synthesis and electrochemical properties of hematite nanotubes for energy storage in supercapacitor

Hematite nanotubes (α-Fe{sub 2}O{sub 3} NTs) are synthesized via a cost-effective and environmental-friendly hydrothermal technique. Field emission scanning electron microscopy and X-ray powder diffraction analyses reveal the formation of α-Fe{sub 2}O{sub 3} NTs with high crystallinity and purity. Optical behavior of α-Fe{sub 2}O{sub 3} NTs is studied employing UV-visible spectroscopy. Electrochemical properties of the as-prepared electrode material are investigated by cyclic voltammetry, chronopotentiometry and electrochemical impedance spectroscopy in a three electrode cell. The synthesized α-Fe{sub 2}O{sub 3} NTs present enhanced pseudocapacitive performance with high specific capacity of 230 Fg{sup −1} at current density of 1 Ag{sup −1}. The prepared α-Fe{sub 2}O{sub 3} NTs can be utilized as a potential electrode material for electrochemical capacitor applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

On uniform plasma generation for the large area plasma processing in intermediate pressures

Radial plasma discharge characteristics in the range of 450 mm were studied in a dual inductively coupled plasma (ICP) source, which consisted of a helical ICP and the side type ferrite ICPs. Since the energy relaxation length is shorter than the distance between each of the ferrite ICPs in an intermediate pressure (600 mTorr), local difference in the plasma ignition along the antenna position were observed. In addition, large voltage drop in the discharge of the ferrite ICPs causes an increase in the displacement current to the plasma, and separate discharge mode (E and H mode) according to the antenna position was observed. This results in non-uniform plasma distribution. For the improvement in the discharge of the ferrite ICPs, a capacitor which is placed between the ends of antenna and the ground is adjusted to minimize the displacement current to the plasma. As a result, coincident transitions from E to H mode were observed along the antenna position, and radially concave density profile (edge focused) was measured. For the uniform density distribution, a helical ICP, which located at the center of the discharge chamber, was simultaneously discharged with the ferrite ICPs. Due to the plasma potential variation through the simultaneous discharge of helical ICP and ferrite ICPs, uniform radial distribution in both plasma density and electron temperature are achieved.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Cavity quantum electrodynamics using a near-resonance two-level system: Emergence of the Glauber state

Random tunneling two-level systems (TLSs) in dielectrics have been of interest recently because they adversely affect the performance of superconducting qubits. The coupling of TLSs to qubits has allowed individual TLS characterization, which has previously been limited to TLSs within (thin) Josephson tunneling barriers made from aluminum oxide. Here, we report on the measurement of an individual TLS within the capacitor of a lumped-element LC microwave resonator, which forms a cavity quantum electrodynamics (CQED) system and allows for individual TLS characterization in a different structure and material than demonstrated with qubits. Due to the reduced volume of the dielectric (80 μm{sup 3}), even with a moderate dielectric thickness (250 nm), we achieve the strong coupling regime as evidenced by the vacuum Rabi splitting observed in the cavity spectrum. A TLS with a coherence time of 3.2 μs was observed in a film of silicon nitride as analyzed with a Jaynes-Cummings spectral model, which is larger than seen from superconducting qubits. As the drive power is increased, we observe an unusual but explicable set of continuous and discrete crossovers from the vacuum Rabi split transitions to the Glauber (coherent) state.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Experimental characterization of a coaxial plasma accelerator for a colliding plasma experiment

We report experimental results of a single coaxial plasma accelerator in preparation for a colliding plasma experiment. The utilized device consisted of a coaxial pair of electrodes, accelerating the plasma due to J×B forces. A pulse forming network, composed of three capacitors connected in parallel, with a total capacitance of 27 μF was set up. A thyratron allowed to switch the maximum applied voltage of 9 kV. Under these conditions, the pulsed currents reached peak values of about 103 kA. The measurements were performed in a small vacuum chamber with a neutral-gas prefill at gas pressures between 10 Pa and 14 000 Pa. A gas mixture of ArH{sub 2} with 2.8% H{sub 2} served as the discharge medium. H{sub 2} was chosen in order to observe the broadening of the H{sub β} emission line and thus estimate the electron density. The electron density for a single plasma accelerator reached peak values on the order of 10{sup 16} cm{sup −3}. Electrical parameters, inter alia inductance and resistance, were determined for the LCR circuit during the plasma acceleration as well as in a short circuit case. Depending on the applied voltage, the inductance and resistance reached values ranging from 194 nH to 216 nH and 13 mΩ to 23 mΩ, respectively. Furthermore, the plasma velocity was measured using a fast CCD camera. Plasma velocities of 2 km/s up to 17 km/s were observed, the magnitude being highly correlated with gas pressure and applied voltage.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Ferroelectricity in undoped hafnium oxide

We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20 nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10 μC cm{sup −2} as well as a read/write endurance of 1.6 × 10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Plasma bullets behavior in a tube covered by a conductor

In this work, for better applications of atmospheric pressure plasma jets, the physics of plasma streamers in a glass tube with a part of it covered by a conductor is investigated. To better understand the propagation mechanism of plasma bullets in capillary tubes passing through a curved or narrow passage for some biomedical or material applications, the propagation of plasma streamers in a tube covered by a floating conductor is investigated. For a plasma streamer propagating in a tube covered by a conductor, the plasma streamer is suppressed and becomes shorter, and a secondary streamer is generated in the tube at the downstream end of the conductor. The larger the area covered by the conductor, or the thinner the tube, the stronger the plasma streamer is inhibited. The electric potential of the conductor is measured to be as high as 6 kV. On the other hand, a higher voltage applied on the HV electrode, or a higher gas flow rate will make the secondary plasma streamer longer. It is found that the capacitor formed by the conductor outside the tube and the wall of the tube plays an important role in inhibiting the original plasma streamer and generating the secondary streamer. Moreover, the active species generated by the original plasma play important role in generating a secondary plasma streamer.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

All-semiconductor metamaterial-based optical circuit board at the microscale

The newly introduced metamaterial-based optical circuit, an analogue of electronic circuit, is becoming a forefront topic in the fields of electronics, optics, plasmonics, and metamaterials. However, metals, as the commonly used plasmonic elements in an optical circuit, suffer from large losses at the visible and infrared wavelengths. We propose here a low-loss, all-semiconductor metamaterial-based optical circuit board at the microscale by using interleaved intrinsic GaAs and doped GaAs, and present the detailed design process for various lumped optical circuit elements, including lumped optical inductors, optical capacitors, optical conductors, and optical insulators. By properly combining these optical circuit elements and arranging anisotropic optical connectors, we obtain a subwavelength optical filter, which can always hold band-stop filtering function for various polarization states of the incident electromagnetic wave. All-semiconductor optical circuits may provide a new opportunity in developing low-power and ultrafast components and devices for optical information processing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Circuit electromechanics with single photon strong coupling

In circuit electromechanics, the coupling strength is usually very small. Here, replacing the capacitor in circuit electromechanics by a superconducting flux qubit, we show that the coupling among the qubit and the two resonators can induce effective electromechanical coupling which can attain the strong coupling regime at the single photon level with feasible experimental parameters. We use dispersive couplings among two resonators and the qubit while the qubit is also driven by an external classical field. These couplings form a three-wave mixing configuration among the three elements where the qubit degree of freedom can be adiabatically eliminated, and thus results in the enhanced coupling between the two resonators. Therefore, our work constitutes the first step towards studying quantum nonlinear effect in circuit electromechanics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Stabilizing the ferroelectric phase in doped hafnium oxide

The ferroelectric properties and crystal structure of doped HfO{sub 2} thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO{sub 2} showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO{sub 2} was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO{sub 2} to be dominated by interface induced effects, rather than a field induced phase transition. TaN electrodes were shown to considerably enhance the stabilization of the ferroelectric phase in HfO{sub 2} compared to TiN electrodes, yielding a P{sub r} of up to 35 μC/cm{sup 2}. This effect was attributed to the interface oxidation of the electrodes during annealing, resulting in a different density of oxygen vacancies in the Gd:HfO{sub 2} films. Ab initio simulations confirmed the influence of oxygen vacancies on the phase stability of ferroelectric HfO{sub 2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗