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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Method of fabricating germanium and gallium arsenide devices

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Jhabvala, Murzban↗
NASA NTRS1990

HgCdTe for NASA EOS missions and detector uniformity benchmarks

Important NASA Earth Observing System (EOS) missions, Atmospheric Infrared Sounder (AIRS) and Moderate Resolution Imaging Spectrometer (MODIS-N), which require detector spectral response in the range of 14 to 17 microns at medium background flux levels and operation in the range of temperatures between 65 to 95 K, will be flown beginning in the next few years. Currently, a prime candidate detector technology for these missions is trapping-mode photoconductive HgCdTe devices. These devices can be tailored to the exact cutoff wavelengths required by those missions, and thus offer the performance advantages of an intrinsic detector which is ideally matched to the mission wavelength. Under the long wavelength-background-temperature conditions of these EOS missions, any detector will at best be thermal generation-recombination noise limited. Photoconductive devices are generally preferred under these circumstances, since at elevated temperatures their performance degrades with n(sub i) while for photovoltaic detectors performance degrades as n sub i(exp 2) n sub i is the intrinsic carrier concentration which is a function of alloy composition and temperature, but not doping. Very high performance trapping-mode photoconductive HgCdTe detectors have been developed which can be reproducibly fabricated. Detectivity (D asterisk) at 80K and 16 micron cutoff wavelength in excess of 10(exp 11) Jones has been measured for these devices. Power dissipation is at least two orders of magnitude less than conventional HgCdTe photoconductors - on the order of 0.12 W/cm(exp 2) compared with 12 W/cm(exp 2). EOS missions define thermal noise limited conditions for the long wavelength operating bands. Trapping-mode photoconductive HgCdTe detectors are linear under such conditions and responsivity is independent of background flux. At lower temperatures or high flux conditions in which background flux limits detector performance, trapping-mode detectors have a responsivity which varies with background flux. Internal calibration must be provided for radiometric measurements under the latter conditions (not an EOS mission concern). Liquid phase epitaxy is used to grow these HgCdTe device structures. This technique has been shown to give control of the cutoff wavelength on the order of 16 plus or minus 1 micron or less, both from run to run and across wafer dimensions of several centimeters on a side.

Norton, Paul R.↗
NASA NTRS1990

Method and apparatus for determining time, direction, and composition of impacting space particles

A space particle collector for recording the time specific particles are captured, and its direction at the time of capture, utilizes an array of targets, each comprised of an MOS capacitor on a chip charged from an external source and discharged upon impact by a particle through a tab on the chip that serves as a fuse. Any impacting particle creates a crater, but only the first will cause a discharge of the capacitor. A substantial part of the metal film around the first crater is burned off by the discharge current. The time of the impulse which burns the tab, and the identification of the target, is recorded together with data from flight instruments. The metal film is partitioned into pie sections to provide a plurality of targets on each of an array of silicon wafers, thus increasing the total number of identified particles that can be collected. It is thus certain which particles were captured at what specific times.

Kinard, William H.↗
NASA NTRS1990

Surface modification using low energy ground state ion beams

A method of effecting modifications at the surfaces of materials using low energy ion beams of known quantum state, purity, flux, and energy is presented. The ion beam is obtained by bombarding ion-generating molecules with electrons which are also at low energy. The electrons used to bombard the ion generating molecules are separated from the ions thus obtained and the ion beam is directed at the material surface to be modified. Depending on the type of ion generating molecules used, different ions can be obtained for different types of surface modifications such as oxidation and diamond film formation. One area of application is in the manufacture of semiconductor devices from semiconductor wafers.

Chutjian, Ara↗
NASA NTRS1991

Silicon carbide, a semiconductor for space power electronics

After many years of promise as a high temperature semiconductor, silicon carbide (SiC) is finally emerging as a useful electronic material. Recent significant progress that has led to this emergence has been in the areas of crystal growth and device fabrication technology. High quality single-crystal SiC wafers, up to 25 mm in diameter, can now be produced routinely from boules grown by a high temperature (2700 K) sublimation process. Device fabrication processes, including chemical vapor deposition (CVD), in situ doping during CVD, reactive ion etching, oxidation, metallization, etc. have been used to fabricate p-n junction diodes and MOSFETs. The diode was operated to 870 K and the MOSFET to 770 K.

Powell, J. Anthony↗
NASA NTRS1991

Progress toward the development of dual junction GaAs/Ge solar cells

Large area GaAs/Ge cells offer substantial promise for increasing the power output from existing silicon solar array designs and for providing an enabled technology for missions hitherto impossible using silicon. Single junction GaAs/Ge cells offer substantial advantages in both size, weight, and cost compared to GaAs cells but the efficiency is limited to approximately 19.2 to 20 percent AMO. The thermal absorptance of GaAs/Ge cells is also worse than GaAs/GaAs cells (0.88 vs 0.81 typ.) due to the absorption in the Ge substrate. On the other hand dual junction GaAs/Ge cells offer efficiencies up to ultimately 24 percent AMO in sizes up to 8 x 8 cm but there are still technological issues remaining to achieve current matching in the GaAs and Ge cells. This can be achieved through tuned antireflection (AR) coatings, improved quality of the GaAs growth, improved quality Ge wafers and the use of a Back Surface Field (BSF)/Back Surface Reflector (BSR) in the Ge cell. Although the temperature coefficients of efficiency and voltage are higher for dual junction GaAs/Ge cells, it has been shown elsewhere that for typical 28 C cell efficiencies of 22 percent (dual junction) vs 18.5 percent (single junction) there is a positive power tradeoff up to temperatures as high as 120 C. Due to the potential ease of fabrication of GaAs/Ge dual junction cells there is likely to be only a small cost differential compared to single junction cells.

Lillington, D. R.↗
NASA NTRS1991

Tandem concentrator solar cells with 30 percent (AMO) power conversion efficiency

Very high efficiency concentrator solar panels are envisioned as economical and reliable electrical power subsystems for space based platforms of the future. GaAs concentrator cells with very high efficiencies and good sub-bandgap transmissions can be fabricated on standard wafers. GaSb booster cell development is progressing very well; performance characteristics are still improving dramatically. Consistent GaAs/GaSb stacked cell AMO efficiencies greater than 30 percent are expected.

Avery, J. E.↗
NASA NTRS1991

High temperature NASP engine seal development

Key to the development of advanced hypersonic engines such as those being considered for the National Aerospace Plane (NASP) is the development and evaluation of high temperature, flexible seals that must seal the many feet of gaps between the articulating and stationary engine panels. Recent seal progress made at NASA-Lewis is reviewed in the areas of seal concept maturation, test rig development, and performance tests. A test fixture was built at NASA capable of subjecting candidate 3 ft long seals to engine simulated temperatures (up to 1500 F), pressures (up to 100 psi), and engine wall distortions (up to 0.15 in only 18 in span). Leakage performance test results at high temperatures are presented for an innovative high temperature, flexible ceramic wafer seal. Also described is a joint Pratt and Whitney/NASA planned test program to evaluate thermal performance of a braided rope seal under engine simulated heat flux rates (up to 400 Btu/sq ft s), and supersonic flow conditions. These conditions are produced by subjecting the seal specimen to hydrogen oxygen rocket exhaust that flows tangent to the specimen.

Steinetz, Bruce M.↗
NASA NTRS1990

A test fixture for measuring high-temperature hypersonic-engine seal performance

A test fixture for measuring the performance of several high temperature engine seal concepts was installed at the NASA Lewis Research Center. The test fixture was developed to evaluate seal concepts under development for advanced hypersonic engines such as those being considered for the National Aerospace Plane. The fixture can measure static seal leakage performance from room temperature up to 1500 F and air pressure differentials up to 100 psi. Performance of the seals can be measured while sealing against flat or engine simulated distorted walls, where distortions can be as large as 0.150 in. in only an 18 in. span. The fixture is designed to evaluate seals 3 feet long, a typical engine panel length. The seal channel can be configured to test square, circular, or rectangular seals that are nominally 0.5 in. high. The sensitivity of leakage performance to lateral or axial loading can also be measured using specially designed high temperature lateral and axial bellows preload systems. Leakage data for a candidate ceramic wafer engine seal is provided by way of example to demonstrate the test fixture's capabilities.

Steinetz, Bruce M.↗
NASA NTRS1991

Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates.

Powell, J. Anthony↗
NASA NTRS1991

SIMS analysis of extended impact features on LDEF experiment

Discussed here are the first Secondary Ion Mass Spectroscopy (SIMS) analysis of projectile material deposited in extended impact features on Ge wafers from the trailing edge. Although most capture cells lost their plastic film covers, they contain extended impact features that apparently were produced by high velocity impacts when the plastic foils were still intact. Detailed optical scanning of all bare capture cells from the trailing edge revealed more than 100 impacts. Fifty-eight were selected by scanning electron microscope (SEM) inspection as prime candidates for SIMS analysis. Preliminary SIMS measurements were made on 15 impacts. More than half showed substantial enhancements of Mg, Al, Si, Ca, and Fe in the impact region, indicating micrometeorites as the projectiles.

Amari, S.↗
NASA NTRS1991

Ion microprobe elemental analyses of impact features on interplanetary dust experiment sensor surfaces

Hypervelocity impact features on several of the electro-active dust sensors utilized in the Interplanetary Dust Experiment (IDE) were subjected to elemental analysis using an ion microprobe. The negatively biased dust sensor surfaces acted as ion traps for cations produced in the plasma plumes of impacting particles. Impactor residue surrounds most impact features to two or three feature diameters. After etching away a layer of carbonaceous/silicaceous surface contamination, low mass resolution elemental survey scans are used to tentatively identify the presence of impactor debris. High mass resolution two-dimensional elemental maps and three dimensional depth profiling of the feature and surrounding area show the distribution and relative composition of the debris. The location of these sensors on the six primary Long Duration Exposure Facility (LDEF) sides provides a unique opportunity to further define the debris environment. Researchers applied the same techniques to impact and contaminant features on a set of ultra-pure, highly polished single crystal germanium wafer witness plates that were mounted on row 12 and exposed to the environment during the entire mission.

Hunter, Jerry L.↗
NASA NTRS1991

Photoreflectance and DLTS evaluation of plasma-induced damage in GaAs and InP prior to solar cell fabrication

The effect is considered of plasma etching on both GaAs and InP followed by damage removal using rapid thermal annealing (RTA). Effects of these processes were studied by photoreflectance spectroscopy (PR) and deep level transient spectroscopy (DLTS). These techniques are useful in evaluation of wafers prior to and effects of plasma processing during solar cell fabrication.

He, L.↗
NASA NTRS1991

GaAs solar cells for laser power beaming

Efforts to develop GaAs solar cells for coupling to laser beams in the wavelength range of 800 to 840 nm are described. This work was motivated primarily by interests in space-tp-space power beaming applications. In particular, the Battelle Pacific Northwest Laboratories is conducting studies of the utilization of power beaming for several future space missions. Modeling calculations of GaAs cell performance were carried out using PC-1D to determine an appropriate design for a p/n cell structure. Epitaxial wafers were grown by MOCVD and cells fabricated at WSU Tri-Cities. Under simulated conditions, an efficiency of 53 percent was achieved for a cell coupled to 806 nm light at 400 mW/sq cm.

Olsen, Larry C.↗
NASA NTRS1991

High temperature NASP engine seals: A technology review

Progress in developing advanced high temperature engine seal concepts and related sealing technologies for advanced hypersonic engines are reviewed. Design attributes and issues requiring further development for both the ceramic wafer seal and the braided ceramic rope seal are examined. Leakage data are presented for these seals for engine simulated pressure and temperature conditions and compared to a target leakage limit. Basic elements of leakage flow models to predict leakage rates for each of these seals over the wide range of pressure and temperature conditions anticipated in the engine are also presented.

Steinetz, Bruce M.↗
NASA NTRS1991

Pseudomorphic In(y)Ga(1-y)As/GaAs/Al(x)Ga(1-x)As single quantum well surface-emitting lasers with integrated 45 deg beam deflectors

The paper reports on the first demonstration of pseudomorphic InGaAs single quantum well surface-emitting lasers (SELs), with etched vertical mirrors and integrated 45-deg beam deflectors fabricated by ion beam etching. 100-micron-wide broad-area SELs exhibited a threshold current of 320 mA, a total power of 126 mW, and a total external differential quantum efficiency of 0.09 W/A for a 500-micron-long cavity. The perpendicular far-field pattern of broad-area SELs showed a full width at half maximum of about 20 deg. Lasers with various types of cavities fabricated from the same wafer were compared. Broad-area edge-emitting lasers had a threshold current of 200 mA, a total power of 700 mW, and a total external differential quantum efficiency of 0.52 W/A.

Kim, Jae-Hoon↗
NASA NTRS1991

Integrated 222-GHz corner-reflector antennas

A high-gain monolithic millimeter-wave antenna has been designed, fabricated, and tested at 222 GHz. The structure consists of a traveling-wave antenna integrated on a 1.2-micron dielectric membrane and suspended in a longitudinal cavity etched in a silicon wafer. A new traveling-wave antenna design yields a wideband input impedance and a low cross-polarization component in the E- and quasi-H-plane patterns. A directivity of 17.7 dB and a main-beam efficiency of 88.5 percent are calculated from the 222-GHz pattern measurements. The integrated corner-reflector antenna is well suited for millimeter- and submillimeter-wave imaging applications in large f-number systems.

Gearhart, Steven S.↗
NASA NTRS1990

Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 micron

Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.

Ackley, D. E.↗