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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Radiation effects on DC-DC Converters

DC-DC switching converters are circuits that can be used to convert a DC voltage of one value to another by switching action. They are increasing being used in space systems. Most of the popular DC-DC switching converters utilize power MOSFETs. However power MOSFETs, when subjected to radiation, are susceptible to degradation of device characteristics or catastrophic failure. This work focuses on the effects of total ionizing dose on converter performance. Four fundamental switching converters (buck converter, buck-boost converter, cuk converter, and flyback converter) were built using Harris IRF250 power MOSFETs. These converters were designed for converting an input of 60 volts to an output of about 12 volts with a switching frequency of 100 kHz. The four converters were irradiated with a Co-60 gamma source at dose rate of 217 rad/min. The performances of the four converters were examined during the exposure to the radiation. The experimental results show that the output voltage of the converters increases as total dose increases. However, the increases of the output voltage were different for the four different converters, with the buck converter and cuk converter the highest and the flyback converter the lowest. We observed significant increases in output voltage for cuk converter at a total dose of 24 krad (si).

Zhang, Dexin↗
NASA NTRS2001

Low Temperature Performance of High Power Density DC/DC Converter Modules

In this paper, two second-generation high power density DC/DC converter modules have been evaluated at low operating temperatures. The power rating of one converter (Module 1) was specified at 150 W with an input voltage range of 36 to 75 V and output voltage of 12 V. The other converter (Module 2) was specified at 100 W with the same input voltage range and an output voltage of 3.3 V. The converter modules were evaluated in terms of their performance as a function of operating temperature in the range of 25 to -140 C. The experimental procedures along with the experimental data obtained are presented and discussed in this paper.

Elbuluk, Malik E.↗
NASA NTRS2002

Inrush Current Control Circuit

An inrush current control circuit having an input terminal connected to a DC power supply and an output terminal connected to a load capacitor limits the inrush current that charges up the load capacitor during power up of a system. When the DC power supply applies a DC voltage to the input terminal, the inrush current control circuit produces a voltage ramp at the load capacitor instead of an abrupt DC voltage. The voltage ramp results in a constant low level current to charge up the load capacitor, greatly reducing the current drain on the DC power supply.

Cole, Steven W.↗
NASA NTRS2002

The Semicircular Canal Microphonic

Present experiments were designed to quantify the alternating current (AC) component of the semicircular canal microphonic for angular motion stimulation as a function of stimulus frequency and amplitude. The oyster toadfish, Opsanus tau, was used as the experimental model. Calibrated mechanical indentation of the horizontal canal duct was used as a stimulus to generate hair-cell and afferent responses reproducing those present during head rotation. Sensitivity to polarization of the endolymph DC voltage re: perilymph was also investigated. Modulation of endolymph voltage was recorded using conventional glass electrodes and lock-in amplification over the frequency range 0.2-80 Hz. Access to the endolymph for inserting voltage recording and current passing electrodes was obtained by sectioning the anterior canal at its apex and isolating the cut ends in air. For sinusoidal stimulation below approx.10 Hz, the horizontal semicircular canal AC microphonic was nearly independent of stimulus frequency and equal to approximately 4 microV per micron indent (equivalent to approx. 1 microV per deg/s). A saturating nonlinearity decreasing the microphonic gain was present for stimuli exceeding approx.3 micron indent (approx. 12 deg/s angular velocity). The phase was not sensitive to the saturating nonlinearity. The microphonic exhibited a resonance near 30Hz consistent with basolateral current hair cell resonance observed previously in voltage-clamp records from semicircular canal hair cells. The magnitude and phase of the microphonic exhibited sensitivity to endolymphatic polarization consistent with electro-chemical reversal of hair cell transduction currents.

Rabbitt, R. D.↗
NASA NTRS2002

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistor

The threshold voltages of a carbon-nanotube (CNT) field-effect transistor (FET) are studied. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, and this makes the device characteristics quite unique. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and inversion and accumulation threshold voltages (V(sub Ti), and V(sub Ta)) are derived. V(sub Ti) of the CNTFETs has a much stronger doping dependence than that of the metal-oxide- semiconductor FETs, while V(sub Ta) of both devices depends weakly on doping with the same functional form.

Toshishige, Yamada↗
NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗
NASA NTRS2002

NiH2 Cycle Life Study

Cycle life studies have been performed at Eagle Picher Technologies (EPT), on HST Mantech design cells with various pedigrees of slurry and dry sinter processed electrodes, to evaluate peak load voltage performance during generic load profile testing. These tests provide information for determining voltage and capacity fade (degradation) mechanisms, and their impact on nickel hydrogen cell cycle life. Comparison of peak load voltage fade, as a function of State of Charge and cycle life, with capacity data from HST indicates that the cycle life limiting mechanism is due to impedance growth, and formation of a second discharge plateau. With a second plateau on discharge, capacity from the cell is still available, but at an unacceptable low voltage of 0.8 V per cell (17.6 V battery). Data shows that cell impedance increases with cycle number and depth of discharge, as expected.

Hollandsworth, Roger P.↗
NASA NTRS2004

Ferroelectric Field Effect Transistor Model Using Partitioned Ferroelectric Layer and Partial Polarization

A model of an n-channel ferroelectric field effect transistor has been developed based on both theoretical and empirical data. The model is based on an existing model that incorporates partitioning of the ferroelectric layer to calculate the polarization within the ferroelectric material. The model incorporates several new aspects that are useful to the user. It takes into account the effect of a non-saturating gate voltage only partially polarizing the ferroelectric material based on the existing remnant polarization. The model also incorporates the decay of the remnant polarization based on the time history of the FFET. A gate pulse of a specific voltage; will not put the ferroelectric material into a single amount of polarization for that voltage, but instead vary with previous state of the material and the time since the last change to the gate voltage. The model also utilizes data from FFETs made from different types of ferroelectric materials to allow the user just to input the material being used and not recreate the entire model. The model also allows the user to input the quality of the ferroelectric material being used. The ferroelectric material quality can go from a theoretical perfect material with little loss and no decay to a less than perfect material with remnant losses and decay. This model is designed to be used by people who need to predict the external characteristics of a FFET before the time and expense of design and fabrication. It also allows the parametric evaluation of quality of the ferroelectric film on the overall performance of the transistor.

MacLeod, Todd C.↗
NASA NTRS2004

Real Time Calibration Method for Signal Conditioning Amplifiers

A signal conditioning amplifier receives an input signal from an input such as a transducer. The signal is amplified and processed through an analog to digital converter and sent to a processor. The processor estimates the input signal provided by the transducer to the amplifier via a multiplexer. The estimated input signal is provided as a calibration voltage to the amplifier immediately following the receipt of the amplified input signal. The calibration voltage is amplified by the amplifier and provided to the processor as an amplified calibration voltage. The amplified calibration voltage is compared to the amplified input signal, and if a significant error exists, the gain and/or offset of the amplifier may be adjusted as necessary.

Pedro J Medelius↗
NASA NTRS2006

Performance and Reliability of Solid Tantalum Capacitors at Cryogenic Conditions

Performance of different types of solid tantalum capacitors was evaluated at room and low temperatures, down to 15 K. The effect of temperature on frequency dependencies of capacitance, effective series resistances (ESR), leakage currents, and breakdown voltages has been investigated and analyzed. To assess thermo-mechanical robustness of the parts, several groups of loose capacitors and those soldered on FR4 boards were subjected to multiple (up to 500) temperature cycles between room temperature and 77 K. Experiments and mathematical modeling have shown that degradation in tantalum capacitors at low temperatures is mostly due to increasing resistance of the manganese cathode layer, resulting in substantial decrease of the roll-off frequency. Absorption currents follow a power law, I approximately t(sup -m), with the exponent m varying from 0.8 to 1.1. These currents do not change significantly at cryogenic conditions and the value of the exponent remains the same down to 15 K. Variations of leakage currents with voltage can be described by Pool-Frenkel and Schottky mechanisms of conductivity, with the Schottky mechanism prevailing at cryogenic conditions. Breakdown voltages of tantalum capacitors increase and the probability of scintillations decreases at cryogenic temperatures. However, breakdown voltages measured during surge current testing decrease at liquid nitrogen (LN) compared to room-temperature conditions. Results of temperature cycling suggest that tantalum capacitors are capable of withstanding multiple exposures to cryogenic conditions, but the probability of failures varies for different part types.

Teverovsky, Alexander↗
NASA NTRS2004

Lithium-sulfur dioxide batteries on Mars rovers

NASA's 2003 Mars Exploration Rover (MER) missions, Spirit and Opportunity, have been performing exciting surface exploration studies for the past six months. These two robotic missions were aimed at examining the presence of water and, thus, any evidence of life, and at understanding the geological conditions of Mars, These rovers have been successfully assisted by primary lithium-sulfur dioxide batteries during the critical entry, descent, and landing (EDL) maneuvers. These batteries were located on the petals of the lander, which, unlike in the Mars Pathfinder mission, was designed only to carry the rover. The selection of the lithium-sulfur dioxide battery system for this application was based on its high specific energy and high rate discharge capability, combined with low heat evolution, as dictated by this application. Lithium-sulfur dioxide batteries exhibit voltage delay, which tends to increase at low discharge temperatures, especially after extended storage at warm temperatures, In the absence of a depassivation circuit, as provided on earlier missions, e.g., Galileo, we were required to depassivate the lander primary batteries in a unique manner. The batteries were brought onto a shunt-regulated bus set at pre-selected discharge voltages, thus affecting depassivation during constant discharge voltages. Several ground tests were preformed, on cells, cell strings and battery assembly with five parallel strings, to identify optimum shunt voltages and durations of depassivation. We also examined the repassivation of lithium anodes, subsequent to depassivation. In this paper, we will describe these studies, in detail, as well as the depassivation of the lander flight batteries on both Spirit and Opportunity rover prior to the EDL sequence and their performance during landing on Mars.

Lithium-SO2 batteries↗
NASA NTRS2006

Prototype Software for Future Spaceflight Tested at Mars Desert Research Station

NASA scientists in MDRS Crew 49 (April 23-May 7, 2006) field tested and significantly extended a prototype monitoring and advising system that integrates power system telemetry with a voice commanding interface. A distributed, wireless network of functionally specialized agents interacted with the crew to provide alerts (e.g., impending shut-down of inverter due to low battery voltage), access md interpret historical data, and display troubleshooting procedures. In practical application during two weeks, the system generated speech over loudspeakers and headsets lo alert the crew about the need to investigate power system problems. The prototype system adapts the Brahms/Mobile Agents toolkit to receive data from the OneMeter (Brand Electronics) electric metering system deployed by Crew 47. A computer on the upper deck was connected to loudspeakers, four others were paired with wireless (Bluetooth) headsets that enabled crew members to interact with their personal agents from anywhere in the hab. Voice commands and inquiries included: 1. What is the {battery | generator} {volts | amps | volts and amps}? 2. What is the status of the {generator | inverter | battery | solar panel}? 3. What is the hab{itat} {power usage | volts | voltage | amps | volts and amps}? 4. What was the average hab{itat} {amps | volts | voltage} since <#> {AM | PM)? 5. When did the {generator | batteries} change status? 6. Tell {me I | everyone} when{ ever} the generator goes offline. 7. Tell {me | | everyone} when the hab{itat} {amps | volts | voltage} {exceeds | drops brelow} <#>. 8. {Send | Take | Record} {a} voice note {(for | to} } {at }. This research demonstrates the principles of design in the context of use, investigating requirements through experimental use of prototype systems in an analog setting, and use of MDRS as a research facility for designing and implementing new systems.

Clancey, William J.↗
NASA NTRS2006

Fast Turn-Off Times Observed in Experimental 4H SiC Thyristors

Room temperature measurements of the turn-off time (t(sub q)) are reported for several packaged, npnp developmental power thyristors based on 4H-type SiC and rated 400 V, 2 A. Turn-off is effected by a 50 V pulse of applied reverse voltage, from a state of a steady 1 A forward current. Plots of t(sub q) against the ramp rate (dV(sub AK)/dt) of reapplied forward voltage are presented for preset values of limiting anode-to-cathode voltage (V(sub AK,max)). The lowest t(sub q) measured was about 180 ns. A rapid rise of these t(sub q) curves was observed for values of V(sub AK,max) that are only about a fifth of the rated voltage, whereas comparative t(sub q) plots for a commercial, fast turn-off, Si-based thyristor at a proportionately reduced V(sub AK,max) showed no such behavior. Hence these SiC thyristors may have problems arising from material defects or surface passivation. The influence the R-C-D gate bypass circuit that was used is briefly discussed.

Niedra, Janis M.↗
NASA NTRS2004

Design of an Auto-zeroed, Differential, Organic Thin-film Field-effect Transistor Amplifier for Sensor Applications

Organic strain gauge and other sensors require high-gain, precision dc amplification to process their low-level output signals. Ideally, amplifiers would be fabricated using organic thin-film field-effect transistors (OTFT's) adjacent to the sensors. However, OTFT amplifiers exhibit low gain and high input-referred dc offsets that must be effectively managed. This paper presents a four-stage, cascaded differential OTFT amplifier utilizing switched capacitor auto-zeroing. Each stage provides a nominal voltage gain of four through a differential pair driving low-impedance active loads, which provide common-mode output voltage control. p-type pentacence OTFT's are used for the amplifier devices and auto-zero switches. Simulations indicate the amplifier provides a nominal voltage gain of 280 V/V and effectively amplifies a 1-mV dc signal in the presence of 500-mV amplifier input-referred dc offset voltages. Future work could include the addition of digital gain calibration and offset correction of residual offsets associated with charge injection imbalance in the differential circuits.

large-area electronics↗
NASA NTRS2007

CALIPSO Mission Status Update: Payload Status

The CALIPSO mission payload status update is presented. The contents include: 1) Wide Field Camera Overview; 2) WFC Temperatures; 3) WFC Voltages; 4) Imaging Infrared Radiometer (IIR) Health; 5) IIR Voltages; 6) Payload Control (PLC) Voltages; 7) PLC Temperatures; 8) Low Voltage Power Supply (LVPS) (CALOPS0025N); 9) PLC Radiation Effects; 10) SDS Status (CALOPS0020N); 11) CALIOP LIDAR; 12) Laser Energy Trends; 13) Laser Energy Zoom; 14) Laser Management Approach; 15) Green / Red Ratio; 16) Pedestal @ SHG Temperature Trends; 17) LOM Heater Duty Cycle Trends; 18) LOM Pressure Trends; 19) Boresight Trend; 20) 1064 Dark Noise Trend; 21) 532 SNR Trend; 22) Spike Trends; 23) LIDAR Highlights; 24) Backup Laser Status; and 25) Future Plans.

Verhappen, Ron↗
NASA NTRS1992

Precision bridge circuit using a temperature sensor

A precision bridge measurement circuit connected to a current source providing a linear output voltage versus resistance change of a variable resistance (resistance temperature transducer) including a voltage follower in one branch of the bridge so that the zero setting of the transducer resistance does not depend upon the current source or upon an excitation voltage. The zero setting depends only on the precision and stability of the three resistances. By connecting the output of an instrumentation amplifier to a feedback resistor and then to the output of the voltage follower, minor nonlinearities in the resistance-vs-temperature output of a resistance-temperature transducer, such as a platinum temperature sensor, may be corrected. Sensors which have nonlinearity opposite in polarity to platinum, such as nickel-iron sensors, may be linearized by inserting an inverting amplifier into the feedback loop.

Mount, Bruce E.↗
NASA NTRS2004

Cell buffer with built-in test

A cell buffer with built-in testing mechanism is provided. The cell buffer provides the ability to measure voltage provided by a power cell. The testing mechanism provides the ability to test whether the cell buffer is functioning properly and thus providing an accurate voltage measurement. The testing mechanism includes a test signal-provider to provide a test signal to the cell buffer. During normal operation, the test signal is disabled and the cell buffer operates normally. During testing, the test signal is enabled and changes the output of the cell buffer in a defined way. The change in the cell buffer output can then be monitored to determine if the cell buffer is functioning correctly. Specifically, if the voltage output of the cell buffer changes in a way that corresponds to the provided test signal, then the functioning of the cell buffer is confirmed. If the voltage output of the cell buffer does not change correctly, then the cell buffer is known not to be operating correctly. Thus, the built in testing mechanism provides the ability to quickly and accurately determine if the cell buffer is operating correctly. Furthermore, the testing mechanism provides this functionality without requiring excessive device size and complexity.

Ott, William E.↗
NASA NTRS2004

Self regulating body bias generator

The back bias voltage on a functional circuit is controlled through a closed loop process. A delay element receives a clock pulse and produces a delay output. The delay element is advantageously constructed of the same materials as the functional circuit so that the aging and degradation of the delay element parallels the degradation of the functional circuit. As the delay element degrades, the transistor switching time increases, increasing the time delay of the delay output. An AND gate compares a clock pulse to an output pulse of the delay element, the AND output forming a control pulse. A duty cycle of the control pulse is determined by the delay time between the clock pulse and the delay element output. The control pulse is received at the input of a charge pump. The charge pump produces a back bias voltage which is then applied to the delay element and to the functional circuit. If the time delay produced by the delay element exceeds the optimal delay, the duty cycle of the control pulse is shortened, and the back bias voltage is lowered, thereby increasing the switching speed of the transistors in the delay element and reducing the time delay. If the throughput of the delay element is too fast, the duty cycle of the control pulse is lengthened, raising the back bias voltage produced by the charge pump. This, in turn, lowers the switching speed of the transistors in both the delay element and the functional circuit. The slower switching speed in the delay element increases time delay. In this manner, the switching speed of the delay element, and of the functional circuit, is maintained at a constant level over the life of the circuit.

Hass, Kenneth↗