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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance

We report angle dependent and temperature dependent (9 K–300 K) photo-modulated reflectance (PR) studies on vertical-cavity surface-emitting laser (VCSEL) structures, designed for 2.3 μm mid-infrared gas sensing applications. Changing the temperature allows us to tune the energies of the quantum well (QW) transitions relative to the VCSEL cavity mode (CM) energy. These studies show that this VCSEL structure has a QW-CM offset of 21 meV at room temperature. Consequently the QW ground-state transition comes into resonance with the CM at 220 ± 2 K. The results from these PR studies are closely compared with those obtained in a separate study of actual operating devices and show how the PR technique may be useful for device optimisation without the necessity of having first to process the wafers into working devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Controlled switching of ultrafast circular polarization oscillations in spin-polarized vertical-cavity surface-emitting lasers

We demonstrate a scheme for controlled switching of polarization oscillations in spin-polarized vertical-cavity surface-emitting lasers (spin-VCSEL). Under hybrid electrical and optical pumping conditions, our VCSEL devices show polarization oscillations with frequencies far above the VCSEL's electrical modulation bandwidth. Using multiple optical pulses, we are able to excite and amplify these polarization oscillations. When specific phase and amplitude conditions for the optical excitation pulses are met, destructive interference leads to switch-off of the polarization oscillation, enabling the generation of controlled short polarization bursts.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

High performance vertical tunneling diodes using graphene/hexagonal boron nitride/graphene hetero-structure

A tunneling rectifier prepared from vertically stacked two-dimensional (2D) materials composed of chemically doped graphene electrodes and hexagonal boron nitride (h-BN) tunneling barrier was demonstrated. The asymmetric chemical doping to graphene with linear dispersion property induces rectifying behavior effectively, by facilitating Fowler-Nordheim tunneling at high forward biases. It results in excellent diode performances of a hetero-structured graphene/h-BN/graphene tunneling diode, with an asymmetric factor exceeding 1000, a nonlinearity of ∼40, and a peak sensitivity of ∼12 V{sup −1}, which are superior to contending metal-insulator-metal diodes, showing great potential for future flexible and transparent electronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhanced photoelectrochemical activity of vertically aligned ZnO-coated TiO{sub 2} nanotubes

Vertically aligned ZnO-TiO{sub 2} hetero-nanostructures constructed of anatase TiO{sub 2} nanotubes (NTs) and wurtzite ZnO coatings are fabricated by atomic layer deposition of ZnO coatings on electrochemical anodization formed TiO{sub 2} NTs, and their photoelectrochemical activities are studied through photoelectrochemical and electrochemical characterization. Compared with bare TiO{sub 2} NTs, the transient photocurrent increases to over 1.5-fold for the annealed ZnO-coated TiO{sub 2} NTs under visible illumination. The ZnO-coated TiO{sub 2} NTs also show a longer electron lifetime, a lower charge-transfer resistance and a more negative flat-band potential than the bare TiO{sub 2} NTs, confirming the improved photoelectrochemical activity due to the enhanced charge separation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Strain relaxation and enhanced perpendicular magnetic anisotropy in BiFeO{sub 3}:CoFe{sub 2}O{sub 4} vertically aligned nanocomposite thin films

Self-assembled BiFeO{sub 3}:CoFe{sub 2}O{sub 4} (BFO:CFO) vertically aligned nanocomposite thin films have been fabricated on SrTiO{sub 3} (001) substrates using pulsed laser deposition. The strain relaxation mechanism between BFO and CFO with a large lattice mismatch has been studied by X-ray diffraction and transmission electron microscopy. The as-prepared nanocomposite films exhibit enhanced perpendicular magnetic anisotropy as the BFO composition increases. Different anisotropy sources have been investigated, suggesting that spin-flop coupling between antiferromagnetic BFO and ferrimagnetic CFO plays a dominant role in enhancing the uniaxial magnetic anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Flip-chip bonding of vertical-cavity surface-emitting lasers using laser-induced forward transfer

This letter reports the use of the Laser-Induced Forward Transfer (LIFT) technique for the fabrication of indium micro-bumps for the flip-chip (FC) bonding of single vertical-cavity surface-emitting laser chips. The FC bonded chips were electrically and optically characterized, and the successful functioning of the devices post-bonding is demonstrated. The die shear and life-time tests carried out on the bonded chips confirmed the mechanical reliability of the LIFT-assisted FC bonded assemblies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC

Vertical rectifying contacts of epitaxial graphene grown by Si sublimation on the Si-face of 4H-SiC epilayers were investigated. Forward bias preferential conduction through the step edges was correlated by linear current density normalization. This phenomenon was observed on samples with 2.7–5.8 monolayers of epitaxial graphene as determined by X-ray photoelectron spectroscopy. A modified Richardson plot was implemented to extract the barrier height (0.81 eV at 290 K, 0.99 eV at 30 K) and the electrically dominant SiC step length of a Ti/Al contact overlapping a known region of approximately 0.52 μm wide SiC terraces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)

A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n{sup +} Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH{sub 3} and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400 nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Absorber and gain chip optimization to improve performance from a passively modelocked electrically pumped vertical external cavity surface emitting laser

We present an electrically pumped vertical-external-cavity surface-emitting laser (EP-VECSEL) modelocked with a semiconductor saturable absorber mirror (SESAM) with significantly improved performance. In different cavity configurations, we present the shortest pulses (2.5 ps), highest average output power (53.2 mW), highest repetition rate (18.2 GHz), and highest peak power (4.7 W) to date. The simple and low-cost concept of EP-VECSELs is very attractive for mass-market applications such as optical communication and clocking. The improvements result from an optimized gain chip from Philips Technologie GmbH and a SESAM, specifically designed for EP-VECSELs. For the gain chip, we found a better trade-off between electrical and optical losses with an optimized doping scheme in the substrate to increase the average output power. Furthermore, the device's bottom contact diameter (60 μm) is smaller than the oxide aperture diameter (100 μm), which favors electro-optical conversion into a TEM{sub 00} mode. Compared to optically pumped VECSELs we have to increase the field enhancement in the active region of an EP-VECSEL which requires a SESAM with lower saturation fluence and higher modulation depth for modelocking. We therefore used a resonant quantum well SESAM with a 3.5-pair dielectric top-coating (SiN{sub x} and SiO{sub 2}) to enhance the field in the absorber at the lasing wavelength of 980 nm. The absorption bandedge at room temperature is detuned (965 nm) compared to the resonance (980 nm), which enables temperature-tuning of the modulation depth and saturation fluence from approximately 2.5% up to 15% and from 20 μJ/cm{sup 2} to 1.1 μJ/cm{sup 2}, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Comment on “A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb superlattices” [J. Appl. Phys. 114, 053712 (2013)]

The purpose of this comment is to point out that the paper by Safa, Asgari, and Faraone [J. Appl. Phys. 114, 053712 (2013)] (SAF) on electronic transport in superlattices contains a number of errors in physics and execution. By dealing with a finite number of periods and forcing the wave function to be zero at the upper and lower boundaries of the superlattice stack, SAF have turned the system into a quantum well for which the momentum along the growth axis is not a good quantum number, so that the bands in the growth direction are flat and the corresponding carrier velocities and vertical mobilities are zero. A number of other errors allow the authors to get nonzero results and to reach conclusions that qualitatively mirror those of Szmulowicz, Haugan, Elhamri, and Brown [Phys. Rev. B 84, 155307 (2011)].

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10{sup 14} cm{sup −3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Growth of vertically aligned α−MoO{sub 3} nanoflakes by using a facile PVD route

In this report, we synthesize vertically aligned molybdenum trioxide (α−MoO{sub 3}) nanoflakes (NFs) with high aspect ratio (height/thickness >15) on the cobalt coated glass substrates by the plasma assisted sublimation process, employing Mo metal strip as a sublimation source. The effect of substrate temperature, nature of substrate as well as the geometry of the sublimation source (Mo-strip) have been investigated on the morphological, structural and optical properties of the grown NFs, keeping plasma parameters as fixed. The surface morphology, crystalline structure and optical properties of MoO{sub 3} NFs have been studied systematically by using scanning electron microscope (SEM), transmission electron microscope (TEM) with selected area electron diffraction (SAED), X-ray diffractometer, and IR- spectroscopy. The experimental observations endorse that the characteristics of MoO{sub 3} NFs are strongly depend on substrate temperature, substrate nature as well as geometry of Mo-strip. All the observed results are well in consonance with each other.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Growth and characterization of 4-chloro-3-nitrobenzophenone single crystals using vertical Bridgman technique

4-chloro-3-nitrobenzophenone (4C3N) has been grown by using vertical Bridgman technique. The grown crystal was confirmed by Powder X-ray diffraction analysis. The crystalline perfection of the grown crystal was examined by high-resolution X-ray diffraction study. The fluorescence spectra of grown 4C3N single crystals exhibit emission peak at 575 nm. The micro hardness measurements were used to analyze the mechanical property of the grown crystal.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Reconfigurable and non-volatile vertical magnetic logic gates

In this paper, we discuss the concept and prototype fabrication of reconfigurable and non-volatile vertical magnetic logic gates. These gates consist of two input layers and a RESET layer. The RESET layer allows the structure to be used as either an AND or an OR gate, depending on its magnetization state. To prove this concept, the gates were fabricated using a multi-layered patterned magnetic media, in which three magnetic layers are stacked and exchange-decoupled via non-magnetic interlayers. We demonstrate the functionality of these logic gates by conducting atomic force microscopy and magnetic force microscopy (MFM) analysis of the multi-layered patterned magnetic media. The logic gates operation mechanism and fabrication feasibility are both validated by the MFM imaging results.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Vertically aligned crystalline silicon nanowires with controlled diameters for energy conversion applications: Experimental and theoretical insights

Vertically orientated single crystalline silicon nanowire (SiNW) arrays with controlled diameters are fabricated via a metal-assisted chemical etching method. The diameter of the fabricated nanowires is controlled by simply varying the etching time in HF/H{sub 2}O{sub 2} electrolytes. The fabricated SiNWs have diameters ranging from 117 to 650 nm and lengths from 8 to 18 μm. The optical measurements showed a significant difference in the reflectance/absorption of the SiNWs with different diameters, where the reflectance increases with increasing the diameter of the SiNWs. The SiNWs showed significant photoluminescence (PL) emission spectra with peaks lying between 380 and 670 nm. The PL intensity increases as the diameter increases and shows red shift for peaks at ∼670 nm. The increase or decrease of reflectivity is coincident with PL intensity at wavelength ∼660 nm. The x-ray diffraction patterns confirm the high crystallinity of the fabricated SiNWs. In addition, the Raman spectra showed a shift in the first order transverse band toward lower frequencies compared to that usually seen for c-Si. Finite difference time domain simulations have been performed to confirm the effect of change of diameter on the optical properties of the nanowires. The simulation results showed good agreement with the experimental results for the SiNWs of different diameters.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Fabrication of FCC-SiO{sub 2} colloidal crystals using the vertical convective self-assemble method

In order to determine the optimal conditions for the growth of high-quality 250 nm-SiO{sub 2} colloidal crystals by the vertical convective self-assemble method, the Design of Experiments (DoE) methodology is applied. The influence of the evaporation temperature, the volume fraction, and the pH of the colloidal suspension is studied by means of an analysis of variance (ANOVA) in a 3{sup 3} factorial design. Characteristics of the stacking lattice of the resulting colloidal crystals are determined by scanning electron microscopy and angle-resolved transmittance spectroscopy. Quantitative results from the statistical test show that the temperature is the most critical factor influencing the quality of the colloidal crystal, obtaining highly ordered structures with FCC stacking lattice at a growth temperature of 40°C.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

In-well pumped mid-infrared PbTe/CdTe quantum well vertical external cavity surface emitting lasers

Optical in-well pumped mid-infrared vertical external cavity surface emitting lasers based on PbTe quantum wells embedded in CdTe barriers are realized. In contrast to the usual ternary barrier materials of lead salt lasers such as PbEuTe of PbSrTe, the combination of narrow-gap PbTe with wide-gap CdTe offers an extremely large carrier confinement, preventing charge carrier leakage from the quantum wells. In addition, optical in-well pumping can be achieved with cost effective and readily available near infrared lasers. Free carrier absorption, which is a strong loss mechanism in the mid-infrared, is strongly reduced due to the insulating property of CdTe. Lasing is observed from 85 K to 300 K covering a wavelength range of 3.3–4.2 μm. The best laser performance is achieved for quantum well thicknesses of 20 nm. At low temperature, the threshold power is around 100 mW{sub P} and the output power more than 700 mW{sub P}. The significance of various charge carrier loss mechanisms are analyzed by modeling the device performance. Although Auger losses are quite low in IV–VI semiconductors, an Auger coefficient of C{sub A} = 3.5 × 10{sup −27} cm{sup 6} s{sup −1} was estimated for the laser structure, which is attributed to the large conduction band offset.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High blue-near ultraviolet photodiode response of vertically stacked graphene-MoS{sub 2}-metal heterostructures

We present a study on the photodiode response of vertically stacked graphene/MoS{sub 2}/metal heterostructures in which MoS{sub 2} layers are doped with various plasma species. In comparison with undoped heterostructures, such doped ones exhibit significantly improved quantum efficiencies in both photovoltaic and photoconductive modes. This indicates that plasma-doping-induced built-in potentials play an important role in photocurrent generation. As compared to indium-tin-oxide/ MoS{sub 2}/metal structures, the presented graphene/MoS{sub 2}/metal heterostructures exhibit greatly enhanced quantum efficiencies in the blue-near ultraviolet region, which is attributed to the low density of recombination centers at graphene/MoS{sub 2} heterojunctions. This work advances the knowledge for making photo-response devices based on layered materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗