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The various steps involved in the chemical polishing and etching of silicon samples are described and the data on twins, grain boundaries and dislocation pits from fifty-three (53) samples are discussed.
Several experimental and projected Czochralski crystal growing process methods were studied and compared to available operations and cost-data of recent production Cz-pulling, in order to elucidate the role of the dominant cost contributing factors. From this analysis, it becomes apparent that the specific add-on costs of the Cz-process can be expected to be reduced by about a factor of three by 1982, and about a factor of five by 1986. A format to guide in the accumulation of the data needed for thorough techno-economic analysis of solar cell production processes was developed.
The significant economic data for the current production multiblade wafering and inner diameter slicing processes were tabulated and compared to data on the experimental and projected multiblade slurry, STC ID diamond coated blade, multiwire slurry and crystal systems fixed abrasive multiwire slicing methods. Cost calculations were performed for current production processes and for 1982 and 1986 projected wafering techniques.
Analyses of process system properties were continued for materials involved in the alternate processes under consideration for semiconductor silicon. Primary efforts centered on physical and thermodynamic property data for dichlorosilane. The following property data are reported for dichlorosilane which is involved in processing operations for solar cell grade silicon: critical temperature, critical pressure, critical volume, critical density, acentric factor, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity and density. Work was initiated on the assembly of a system to prepare binary gas mixtures of known proportions and to measure the thermal conductivity of these mixtures between 30 and 350 C. The binary gas mixtures include silicon source material such as silanes and halogenated silanes which are used in the production of semiconductor silicon.
Using silk screened evaporated and sputtered Al as the metal source, the formation of Al back surface fields was studied. The most satisfactory results were those obtained with the sputtered A1 and in which open circuit voltages (V sub oc) of 0.585 v (12 ohm cm FZ silicon) were achieved. The ultrasonic interconnect process is discussed. The process is shown to be satisfactory, but increased pull-strength may be obtained if some form of sintering is carried out on the metallized contacts. Plasma etching is shown to be feasible as a replacement for wet chemical cleaning prior to diffusion. Initial results on cells prepared by using electroless Pd/Ni plus either electroplated Ag or Cu show slightly poor performance than cells with the baseline evaporated Ti/Pd/Ag system. A mask designed for the 1.6 x 7.0 cm and 2.0 x 7.0 cm cells is described. This mask has a lower area coverage and total lower resistive loss than the previous mask design. It is also shown that the cell width should not exceed 2.0 - 3.0 cm for optimum efficiency.
The various steps involved in the chemical polishing and etching of silicon samples are described. Data on twins, dislocation pits, and grain boundaries from thirty-one (31) silicon sample are also discussed. A brief review of the changes made to upgrade the image analysis system is included.
During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diameter were grown, ranging in size from 15.5 kg to 17.7 kg. Melt replenishment methods included both poly rod and lump feed material. Samples from each ingot were prepared for solar cell fabrication and analyses, impurity analysis, and structural studies. The furnace was converted to the 14-inch hot zone and preliminary heat runs were performed. Two sucessful runs were demonstrated, by growing 25 kg ingots from 30 kg melts. Also, a 100 kg run was attempted, utilizing the 14 inch crucible hot zone, but was prematurely terminated due to excessive monoxide which accumulated on the viewports and a seed failure.
A baseline sequence for the manufacture of solar cell modules was specified. Starting with silicon wafers, the process goes through damage etching, texture etching, junction formation, plasma edge etch, aluminum back surface field formation, and screen printed metallization to produce finished solar cells. The cells were then series connected on a ribbon and bonded into a finished glass tedlar module. A number of steps required additional developmental effort to verify technical and economic feasibility. These steps include texture etching, plasma edge etch, aluminum back surface field formation, array layup and interconnect, and module edge sealing and framing.
Tests on mineral oil slurries show that the potential for workability and low cost is present. However, slurries tested to date which had sufficient lubricity exhibited wafer breakage problems near the end of the run for as-yet unknown reasons. The first test of the large prototype saw under cutting force control was largely successful in that the controller worked perfectly. Unfortunately a technique error (excessive stroke shortening) caused blade breakage and low yield. The latest run of the large saw pointed up the fact that an indication of end-of-stoke vertical motion, or bounce, is necessary. A circuit to provide such indication was fabricated and installed. Preliminary tests show it to be excessively noise sensitive; therefore, work on grounding and shielding to reduce this sensitivity is in progress.
Testing of low cost low suspension power slurry vehicles is presented. Cutting oils are unlikely to work, but a mineral oil with additives should be workable. Two different abrasives were tested. A cheaper silicon carbide from Norton gave excellent results except for excessive kerf loss: the particles were too big. An abrasive treated for lubricity showed no lubricity improvement in mineral oil vehicle. The bounce fixture was tested for the first time under constant cut rate conditions (rather than constant force). Although the cut was not completed before the blades broke, the blade lifetime of thin (100 micrometer) blades was 120 times the lifetime without the fixture. The large prototype saw completed a successful run, producing 90% cutting yield (849 wafers) at 20 wafers/cm. Although inexperience with large numbers of wafers caused cleaning breakage to reduce this yield to 74%, the yield was high enough that the concept of the large saw is proven workable.
Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.
Tomas Garza relates how the Research Center for Applied Mathematics Systems and Services in Mexico became the Research Institute for Applied Mathematics and Systems and what the type of work performed is.
The brightness temperature data produced by the SMMR Antenna Pattern Correction algorithm are evaluated. The evaluation consists of: (1) a direct comparison of the outputs of the interim, cross, and nominal APC modes; (2) a refinement of the previously determined cos beta estimates; and (3) a comparison of the world brightness temperature (T sub B) map with actual SMMR measurements.
System analysis studies of space construction projects, primarily dealing with areas of space construction support services, construction facilities, orbit altitude, and orbit transfer are presented.
The implications and impacts devolving upon the orbiter by its utilization as a space construction facility for the selected flight system projects are presented.
The processing parameters of the Vitre-Graf coating for optimal performance and economy when applied to mullite and graphite as substrates were presented. A minor effort was also performed on slip-cast fused silica substractes.
The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.
A system to combine silicon formation, by hydrogen reduction of trichlorosilane, with the capability to replenish a crystal growth system is described. A variety of process parameters to allow sizing and specification of gas handling system components was estimated.