Selective thermal terahertz emission from GaAs and AlGaAs
The selective thermally stimulated terahertz (THz) radiation emission from GaAs and AlGaAs alloys are experimentally observed at frequencies of coupled oscillations of free electron plasma and different branches of interface AlGaAs optical phonons. The effect of strong absorption of incident radiation with large oblique angle (26°) by heated GaAs and AlGaAs is revealed. The coherent THz radiation emission with the frequency of 7.6 THz from the heated high conductivity GaAs (n = 4 × 10{sup 18 }cm{sup −3}) layer is observed. The results are highly relevant to application in optoelectronic THz devices.