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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Controlled synthesis and magnetic properties of monodispersed ceria nanoparticles

In the present study, monodispersed CeO{sub 2} nanoparticles (NPs) of size 8.5 ± 1.0, 11.4 ± 1.0 and 15.4 ± 1.0 nm were synthesized using the sol-gel method. Size-dependent structural, optical and magnetic properties of as-prepared samples were investigated by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), high resolution transmission electron microscopy (HR-TEM), ultra-violet visible (UV-VIS) spectroscopy, Raman spectroscopy and vibrating sample magnetometer (VSM) measurements. The value of optical band gap is calculated for each particle size. The decrease in the value of optical band gap with increase of particle size may be attributed to the quantum confinement, which causes to produce localized states created by the oxygen vacancies due to the conversion of Ce{sup 4+} into Ce{sup 3+} at higher calcination temperature. The Raman spectra showed a peak at ∼461 cm{sup -1} for the particle size 8.5 nm, which is attributed to the 1LO phonon mode. The shift in the Raman peak could be due to lattice strain developed due to variation in particle size. Weak ferromagnetism at room temperature is observed for each particle size. The values of saturation magnetization (Ms), coercivity (Hc) and retentivity (Mr) are increased with increase of particle size. The increase of Ms and Mr for larger particle size may be explained by increase of density of oxygen vacancies at higher calcination temperature. The latter causes high concentrations of Ce{sup 3+} ions activate more coupling between the individual magnetic moments of the Ce ions, leading to an increase of Ms value with the particle size. Moreover, the oxygen vacancies may also produce magnetic moment by polarizing spins of f electrons of cerium (Ce) ions located around oxygen vacancies, which causes ferromagnetism in pure CeO{sub 2} samples.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Fast electron flux driven by lower hybrid wave in the scrape-off layer

The fast electron flux driven by Lower Hybrid Wave (LHW) in the scrape-off layer (SOL) in EAST is analyzed both theoretically and experimentally. The five bright belts flowing along the magnetic field lines in the SOL and hot spots at LHW guard limiters observed by charge coupled device and infrared cameras are attributed to the fast electron flux, which is directly measured by retarding field analyzers (RFA). The current carried by the fast electron flux, ranging from 400 to 6000 A/m{sup 2} and in the direction opposite to the plasma current, is scanned along the radial direction from the limiter surface to the position about 25 mm beyond the limiter. The measured fast electron flux is attributed to the high parallel wave refractive index n{sub ||} components of LHW. According to the antenna structure and the LHW power absorbed by plasma, a broad parallel electric field spectrum of incident wave from the antennas is estimated. The radial distribution of LHW-driven current density is analyzed in SOL based on Landau damping of the LHW. The analytical results support the RFA measurements, showing a certain level of consistency. In addition, the deposition profile of the LHW power density in SOL is also calculated utilizing this simple model. This study provides some fundamental insight into the heating and current drive effects induced by LHW in SOL, and should also help to interpret the observations and related numerical analyses of the behaviors of bright belts and hot spots induced by LHW.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Coupling capacitance between double quantum dots tunable by the number of electrons in Si quantum dots

Tunability of capacitive coupling in the Si double-quantum-dot system is discussed by changing the number of electrons in quantum dots (QDs), in which the QDs are fabricated using pattern-dependent oxidation (PADOX) of a Si nanowire and multi-fine-gate structure. A single QD formed by PADOX is divided into multiple QDs by additional oxidation through the gap between the fine gates. When the number of electrons occupying the QDs is large, the coupling capacitance increases gradually and almost monotonically with the number of electrons. This phenomenon is attributed to the gradual growth in the effective QD size due to the increase in the number of electrons in the QDs. On the other hand, when the number of electrons changes in the few-electron regime, the coupling capacitance irregularly changes. This irregularity can be observed even up to 40 electrons. This behavior is attributable the rough structure of Si nano-dots made by PADOX. This roughness is thought to induce complicated change in the electron wave function when an electron is added to or subtracted from a QD.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Effect of plastic deformation on deuterium retention and release in tungsten

The effect of severe plastic deformation on the deuterium retention in tungsten exposed to high-flux low-energy plasma (flux ∼ 10{sup 24 }D/m{sup 2}/s, energy ∼ 50 eV, and fluence up to 3 × 10{sup 26 }D/m{sup 2}) at the plasma generator Pilot-PSI was studied by thermal desorption spectroscopy and scanning electron microscopy. The desorption spectra in both reference and plastically deformed samples were deconvolved into three contributions attributed to the detrapping from dislocations, deuterium-vacancy clusters, and pores, respectively. The plastically induced deformation, resulting in high dislocation density, does not change the positions of the three peaks, but alters their amplitudes as compared to the reference material. The appearance of blisters detected by scanning electron microscopy and the desorption peak attributed to the release from pores (i.e., deuterium bubbles) were suppressed in the plastically deformed samples but only up to a certain fluence. Beyond 5 × 10{sup 25 }D/m{sup 2}, the release from the bubbles in the deformed material is essentially higher than in the reference material. Based on the presented results, we suggest that a dense dislocation network increases the incubation dose needed for the appearance of blisters, associated with deuterium bubbles, by offering numerous nucleation sites for deuterium clusters eventually transforming into deuterium-vacancy clusters by punching out jogs on dislocation lines.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Acceptors in ZnO

Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO{sub 2} contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g{sub ⊥} = 2.0015 and g{sub //} = 2.0056, along with an isotropic center at g = 2.0035.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Quasi-two-dimensional electron gas at the epitaxial alumina/SrTiO{sub 3} interface: Control of oxygen vacancies

In this paper, we report on the highly conductive layer formed at the crystalline γ-alumina/SrTiO{sub 3} interface, which is attributed to oxygen vacancies. We describe the structure of thin γ-alumina layers deposited by molecular beam epitaxy on SrTiO{sub 3} (001) at growth temperatures in the range of 400–800 °C, as determined by reflection-high-energy electron diffraction, x-ray diffraction, and high-resolution electron microscopy. In situ x-ray photoelectron spectroscopy was used to confirm the presence of the oxygen-deficient layer. Electrical characterization indicates sheet carrier densities of ∼10{sup 13 }cm{sup −2} at room temperature for the sample deposited at 700 °C, with a maximum electron Hall mobility of 3100 cm{sup 2}V{sup −1}s{sup −1} at 3.2 K and room temperature mobility of 22 cm{sup 2}V{sup −1}s{sup −1}. Annealing in oxygen is found to reduce the carrier density and turn a conductive sample into an insulator.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Modeling of particle agglomeration in nanofluids

Agglomeration strongly influences the stability or shelf life of nanofluid. The present computational and experimental study investigates the rate of agglomeration quantitatively. Agglomeration in nanofluids is attributed to the net effect of various inter-particle interaction forces. For the nanofluid considered here, a net inter-particle force depends on the particle size, volume fraction, pH, and electrolyte concentration. A solution of the discretized and coupled population balance equations can yield particle sizes as a function of time. Nanofluid prepared here consists of alumina nanoparticles with the average particle size of 150 nm dispersed in de-ionized water. As the pH of the colloid was moved towards the isoelectric point of alumina nanofluids, the rate of increase of average particle size increased with time due to lower net positive charge on particles. The rate at which the average particle size is increased is predicted and measured for different electrolyte concentration and volume fraction. The higher rate of agglomeration is attributed to the decrease in the electrostatic double layer repulsion forces. The rate of agglomeration decreases due to increase in the size of nano-particle clusters thus approaching zero rate of agglomeration when all the clusters are nearly uniform in size. Predicted rates of agglomeration agree adequate enough with the measured values; validating the mathematical model and numerical approach is employed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

LaTiO{sub 3}/KTaO{sub 3} interfaces: A new two-dimensional electron gas system

We report a new 2D electron gas (2DEG) system at the interface between a Mott insulator, LaTiO{sub 3}, and a band insulator, KTaO{sub 3}. For LaTiO{sub 3}/KTaO{sub 3} interfaces, we observe metallic conduction from 2 K to 300 K. One serious technological limitation of SrTiO{sub 3}-based conducting oxide interfaces for electronics applications is the relatively low carrier mobility (0.5-10 cm{sup 2}/V s) of SrTiO{sub 3} at room temperature. By using KTaO{sub 3}, we achieve mobilities in LaTiO{sub 3}/KTaO{sub 3} interfaces as high as 21 cm{sup 2}/V s at room temperature, over a factor of 3 higher than observed in doped bulk SrTiO{sub 3}. By density functional theory, we attribute the higher mobility in KTaO{sub 3} 2DEGs to the smaller effective mass for electrons in KTaO{sub 3}.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Investigations on Ni-Co-Mn-Sn thin films: Effect of substrate temperature and Ar gas pressure on the martensitic transformations and exchange bias properties

We report the effect of substrate temperature (T{sub S}) and Ar gas pressure (P{sub D}) on the martensitic transformations, magnetic and exchange bias (EB) properties in Heusler type Ni-Co-Mn-Sn epitaxial thin films. Martensitic transformation temperatures and EB fields at 5 K were found to increase with increasing T{sub S}. The observed maximum EB value of 320 Oe after field cooling in the film deposited at 650 {sup ∘}C is high among the values reported for Ni-Mn-Sn thin films which is attributed to the coexistence of ferromagnetic (FM) and antiferromagnetic (AF) phases in the martensitic state. In the case of P{sub D} variation, with increase in P{sub D}, martensitic transformation temperatures were increased and a sharp transformation was observed in the film deposited at 0.06 mbar. Magnetization values at 5 K were higher for increasing P{sub D}. These observations are attributed to the compositional shift. EB effect is also present in these films. Microstructural features observed using atomic force microscopy (AFM) shows a fine twinning and reduced precipitation with increase in P{sub D}, which is also confirmed from the scanning electron microscopy (SEM) images. EB effects in both series were confirmed from the training effect. Target ageing effect has been observed in the films deposited before and after ninety days of time interval. This has been confirmed both on substrate temperature and Ar gas pressure variations.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Mechanisms of nonequilibrium electron-phonon coupling and thermal conductance at interfaces

We study the electron and phonon thermal coupling mechanisms at interfaces between gold films with and without Ti adhesion layers on various substrates via pump-probe time-domain thermoreflectance. The coupling between the electronic and the vibrational states is increased by more than a factor of five with the inclusion of an ∼3 nm Ti adhesion layer between the Au film and the non-metal substrate. Furthermore, we show an increase in the rate of relaxation of the electron system with increasing electron and lattice temperatures induced by the laser power and attribute this to enhanced electron-electron scattering, a transport channel that becomes more pronounced with increased electron temperatures. The inclusion of the Ti layer also results in a linear dependence of the electron-phonon relaxation rate with temperature, which we attribute to the coupling of electrons at and near the Ti/substrate interface. This enhanced electron-phonon coupling due to electron-interface scattering is shown to have negligible influence on the Kapitza conductances between the Au/Ti and the substrates at longer time scales when the electrons and phonons in the metal have equilibrated. These results suggest that only during highly nonequilibrium conditions between the electrons and phonons (T{sub e} ≫ T{sub p}) does electron-phonon scattering at an interface contribute to thermal boundary conductance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Low temperature behavior of hyperfine fields in amorphous and nanocrystalline FeMoCuB

Low temperature (4.2 K) magnetic behavior of Fe{sub 76}Mo{sub 8}Cu{sub 1}B{sub 15} metallic glass was studied by {sup 57}Fe Mössbauer spectrometry (MS) and {sup 57}Fe NMR. Distributions of hyperfine magnetic fields P(B) were determined for as-quenched and annealed (nanocrystalline) samples with relative fraction of the grains about 43%. P(B) distributions were derived for both the amorphous matrix and nanocrystalline grains. NMR of alloys with natural and {sup 57}Fe enriched Fe enabled to assess the contribution of {sup 11}B to the total NMR signal. P(B) distribution of the as-quenched alloy derived from MS matches reasonably well the one from NMR of the enriched sample. NMR signal from the sample with natural Fe exhibits contributions from {sup 11}B nuclei. The principal NMR lines of the annealed alloys at 47 MHz correspond to bcc Fe nanocrystals. Small asymmetry of the lines towards higher frequencies might be an indication of possible impurity atoms in the bcc structure. The observed differences between natural and enriched samples are attributed to higher sensitivity in the latter. Positions of the lines attributed to bcc Fe nanocrystals obtained from MS and NMR are in perfect agreement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Doping effect of nano-Ho{sub 2}O{sub 3} and naphthalene in MgB{sub 2} superconductor prepared by powder-in-sealed-tube method

The effect on crystal structure, critical temperature (T{sub C}), and critical current density (J{sub C}) of bulk MgB{sub 2} doped with nano-Ho{sub 2}O{sub 3} and naphthalene was studied. Among all the samples studied, the sample doped with 2.5 wt. % nano-Ho{sub 2}O{sub 3} have shown the best field dependent critical current density [J{sub C}(H)], i.e., 0.77 × 10{sup 5 }A/cm{sup 2} at 2 T and 10 K. While naphthalene doped MgB{sub 2} sample has shown the least J{sub C}(H) characteristics. The improved J{sub C}(H) characteristics in the nano-Ho{sub 2}O{sub 3} doped MgB{sub 2} samples are attributed to improved flux pinning properties due to the formation of HoB{sub 4} and in naphthalene doped MgB{sub 2} samples. The slight lower T{sub C} value (37.01 K) in naphthalene doped samples is attributed to the occurrence of lattice defect by the substitution of carbon at boron site of MgB{sub 2} superconductor. Lower ΔT{sub C} value implies the lesser anisotropy in all the synthesized samples. The flux pinning force density (F{sub P}/F{sub Pmax}) curves are theoretically analyzed using Dew-Hughes model. The result revealed that point pinning is the dominant pinning mechanism for nano-Ho{sub 2}O{sub 3} doped MgB{sub 2} samples, while, surface and grain boundary pinning become dominant with increasing naphthalene addition in nano-Ho{sub 2}O{sub 3} doped MgB{sub 2} samples.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Spectroscopic studies of Cr{sup 3+} ions doped in poly(vinylalcohol) complexed polyethylene glycol polymer films

Polymer films of Poly(vinylalcohol) (PVA) complexed with Polyethylene glycol (PEG) with different dopant concentrations of Cr{sup 3+} ions are prepared by solution cast technique. Electron paramagnetic resonance (EPR), Optical absorption and FT-IR studies have been carried out on the polymer films. The EPR spectra of the entire samples exhibit resonance signal at g ≈1.97 which is attributed to the isolated Cr{sup 3+} pairs. The temperature variation EPR studies show that the population of spin-levels participating in the resonance decreases with an increase in temperature, which is in accordance with the Boltzmann Law. The paramagnetic susceptibilities (X) have been calculated from the EPR data at different temperatures. The linewidth of the g ≈1.97 resonance signal has been found to be decreasing with an increase in temperature, which confirms the pairing mechanism between Cr{sup 3+} ions. The Optical absorption spectrum of chromium ions in (PVA+PEG) polymer films exhibits three bands, corresponding to the d-d transitions {sup 4}A{sub 2g}(F)→{sup 4}T{sub 1g}(F), {sup 4}A{sub 2g}(F)→{sup 4}T{sub 2g}(F) and {sup 4}A{sub 2g}(F)→{sup 2}T{sub 1g}(G), in the order of decreasing energy. The crystal field parameter Dq and the Racah interelectronic repulsion parameters B and C have been evaluated. From the ultraviolet absorption edges, Optical band gap (E{sub opt}) and Urbach (ΔE) energies are evaluated. FT-IR spectrum exhibits few bands which are attributed to O-H, CH, C=C and C=O groups of stretching and bending vibrations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

First experiments probing the collision of parallel magnetic fields using laser-produced plasmas

Novel experiments to study the strongly-driven collision of parallel magnetic fields in β ∼ 10, laser-produced plasmas have been conducted using monoenergetic proton radiography. These experiments were designed to probe the process of magnetic flux pileup, which has been identified in prior laser-plasma experiments as a key physical mechanism in the reconnection of anti-parallel magnetic fields when the reconnection inflow is dominated by strong plasma flows. In the present experiments using colliding plasmas carrying parallel magnetic fields, the magnetic flux is found to be conserved and slightly compressed in the collision region. Two-dimensional (2D) particle-in-cell simulations predict a stronger flux compression and amplification of the magnetic field strength, and this discrepancy is attributed to the three-dimensional (3D) collision geometry. Future experiments may drive a stronger collision and further explore flux pileup in the context of the strongly-driven interaction of magnetic fields.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Calcination temperature influenced multiferroic properties of Ca-doped BiFeO{sub 3} nanoparticles

The influence of Ca-doping and particle size on structural, morphological and magnetic properties of BiFeO{sub 3} nanoparticles has been studied. A sol-gel method was employed for the synthesis of nanoparticles and their particle size was tailored by varying the calcination temperature. Structural analysis revealed a rhombohedral distortion induced by Ca-substitution. The broadening of diffraction peaks with decreasing calcination temperature was indicative of reduction in crystallite size. The morphological analysis revealed the formation of agglomerated nanoparticles having average particle size ranging from 10-15 and 50-55 nm for C4 and C6, respectively. The agglomeration is attributed to high surface energy of nanoparticles. Ferromagnetism has been displayed by all the synthesized nanoparticles. Enhancement of saturation magnetization with Ca-substitution is attributed to suppression of spin cycloid structure by the reduction in size, lattice distortion and creation of oxygen vacancies by the substitution of divalent ion at trivalent site. Further, this value increases as a function of decreasing particle size. Strong particle size effects on magnetic properties of the synthesized nanoparticles are owed to increasing surface to volume ratio. All these observations are indicative of strong dependence of multiferroism on particle size.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Nb-doped single crystalline MoS{sub 2} field effect transistor

We report on the demonstration of a p-type, single crystalline, few layer MoS{sub 2} field effect transistor (FET) using Niobium (Nb) as the dopant. The doping concentration was extracted and determined to be ∼3 × 10{sup 19}/cm{sup 3}. We also report on bilayer Nb-doped MoS{sub 2} FETs with ambipolar conduction. We found that the current ON-OFF ratio of the Nb-doped MoS{sub 2} FETs changes significantly as a function of the flake thickness. We attribute this experimental observation to bulk-type electrostatic effect in ultra-thin MoS{sub 2} crystals. We provide detailed analytical modeling in support of our claims. Finally, we show that in the presence of heavy doping, even ultra-thin 2D-semiconductors cannot be fully depleted and may behave as a 3D material when used in transistor geometry. Our findings provide important insights into the doping constraints of 2D materials, in general.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Temperature evolution of carrier dynamics in GaN{sub x}P{sub y}As{sub 1−y−x}alloys

The temperature dependence of carrier dynamics in GaN{sub x}As{sub 1−y}P{sub y} alloys has been investigated by time resolved photoluminescence. This investigation has shown that the decay time constant does not change significantly up to 100 K, and then starts to decrease rapidly above this temperature. Additionally, the decay times at the high-energy side of the spectrum decrease faster than those at the low-energy side. The effects have been explained by the interplay between carrier capture by radiative and nonradiative recombination centers. Detailed simulations show that the effect of carrier localization in the investigated materials is better described by double-scale potential fluctuations that are related to (i) distribution of localized states energy and (ii) bandgap fluctuations. In addition, it was observed that the increase in nitrogen concentration leads to a shorter decay time at room temperature, which is attributed to a larger concentration of non-radiative recombination centers. Furthermore, a post-growth annealing step leads to a longer decay time at room temperature, which is attributed to a reduction in non-radiative recombination centers. At low temperatures, the role of non-radiative centers is suppressed, and therefore the decay time does not differ significantly for samples with either different nitrogen concentrations or in both the as-grown and annealed samples.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Tailoring the electronic transitions of NdNiO{sub 3} films through (111){sub pc} oriented interfaces

Bulk NdNiO{sub 3} and thin films grown along the pseudocubic (001){sub pc} axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T = 200 K. Here, we show that for NdNiO{sub 3} films deposited on (111){sub pc} NdGaO{sub 3}, the MIT occurs at T = 335 K and the Néel transition at T = 230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111){sub pc} surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.

36 MATERIALS SCIENCE↗