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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

High-frequency programmable acoustic wave device realized through ferroelectric domain engineering

Surface acoustic wave devices are extensively used in contemporary wireless communication devices. We used atomic force microscopy to form periodic macroscopic ferroelectric domains in sol-gel deposited lead zirconate titanate, where each ferroelectric domain is composed of many crystallites, each of which contains many microscopic ferroelastic domains. We examined the electro-acoustic characteristics of the apparatus and found a resonator behavior similar to that of an equivalent surface or bulk acoustic wave device. We show that the operational frequency of the device can be tailored by altering the periodicity of the engineered domains and demonstrate high-frequency filter behavior (>8 GHz), allowing low-cost programmable high-frequency resonators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Effects on crystal structure of CZTS thin films owing to deionized water and sulfurization treatment

To condense the cost and increase the production, using abundantly obtainable non-toxic elements, Cu{sub 2}ZnSnS{sub 4} (CZTS) seem to be a strong contender among the photovoltaic thin film technologies. Cu{sub 2}ZnSnS{sub 4} thin films were fabricated by RF magnetron sputtering system. CZTS were sputtered on Molybdenum (Mo) coated soda lime glass (SLG) using a single target sputtering technique. The sputtering parameters (base pressure, working pressure, Argon (Ar) flow rate, RF power and sputtering time) were kept same for all three types of films. For sulfurization, the temperature used was 500 °C. Finally, As-deposited film was immersed in DIW before undergoing identical sulfurization profile. As-deposited film (Sample A), sulfurized films (Sample B) and sulfurized plus DIW treated (Sample C) were compared in terms of their structural properties by means of X-Ray Diffraction (XRD) measurement and Atomic Force Microscopy (AFM). Sample B and C showed peak of (1 1 2) planes of CZTS which are characteristics of stannite structure. Post deposition treatment on CZTS films proved to be beneficial as evident from the observed enhancement in the crystallinity and grain growth. Significant difference on grain size and area roughness could be observed from the AFM measurement. The roughness of Sample A, B and C increased from 5.007 nm to 20.509 nm and 14.183 nm accordingly. From XRD data secondary phases of Cu{sub x}MoS{sub x} could be observed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

The parameters of open-gate structures treated with different etching time were monitored during the gate recess process, and their impacts on the threshold voltage (V{sub th}) of final fabricated AlGaN/GaN high electron mobility transistors (HEMTs) based on open-gate structures were discussed in this paper. It is found that V{sub th} can exceed 0 V when channel resistance in the recessed region (R{sub on-open}) increases over ∼275 Ω mm, maximum current (I{sub Dmax}) decreases below ∼29 mA/mm, or recessed barrier thickness (t{sub RB}) is below ∼7.5 nm. In addition, t{sub RB} obtained by atomic force microscopy measurements and C-V measurements are also compared. Finally, theoretical common criteria based on the experimental results of this work for t{sub RB} and R{sub on-open} were established to evaluate the V{sub th} of a regular normally-off AlGaN/GaN HEMTs. The results indicate that these parameters of open-gate structure can be utilized to achieve normally-off HEMTs with controllable V{sub th}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire

In light of the necessity to anneal GaN to activate implanted dopants, the effects of the annealing temperature and time, the quality of the hydride vapor phase epitaxy grown GaN film, the quality of the annealing cap, and the effects of the stresses generated by the difference in the coefficients of thermal expansion of the film and the substrate are examined topographically using atomic force microscopy, and electrical measurements are made on Schottky diodes fabricated on the annealed samples. Here the results show that thermal decomposition begins at threading edge dislocations that form polygonized small angle grain boundaries during the annealing process; donor defects, probably nitrogen vacancies, are formed near the surface; and the donors are created more quickly when the annealing temperature is higher, the annealing time is longer, and the thermal stresses on the annealing cap are greater. The results suggest that the maximum annealing temperature is ~1300 °C, and at that annealing temperature, the annealing time should not exceed 4 min.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Ge/GeSn heterostructures grown on Si (100) by molecular-beam epitaxy

The growth of GeSn layers by molecular-beam epitaxy on Si (100) wafers coated with a germanium buffer layer is investigated. The properties of the fabricated structures are controlled by reflection high-energy electron diffraction, atomic-force microscopy, X-ray diffractometry, Rutherford backscattering, and Raman scattering. It is shown that GeSn layers with thicknesses up to 0.5 μm and Sn molar fractions up to 0.073 manifest no sign of plastic relaxation upon epitaxy. The lattice constant of the GeSn layers within the growth plane is precisely the same as that of Ge. The effect of rapid thermal annealing on the conversion of metastable elastically strained GeSn layers into a plastically relaxed state is examined. Ge/GeSn quantum wells with Sn molar fraction up to 0.11 are obtained.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Role of oxygen concentrations on structural and optical properties of RF magnetron sputtered ZnO thin films

We report an investigation on the effect of oxygen flow rate on the structural and optical properties of zinc oxide thin films prepared by RF magnetron sputtering. The structural measurements were carried using grazing incidence X-ray diffraction, atomic force microscopy and Raman spectroscopy. The role of oxygen partial pressure on the crystallinity, the surface morphology and vibrational modes has been established. The optical properties of the films were investigated using FR-Basic-VIS/NIR fitted with FR-Monitor software for film thickness, refractive index and color determination. The film thickness is observed to increase when oxygen is introduced at 4 sccm but eventual decrease with increase in the flow rate an indication of initial increase in rate of deposition followed by reduction. Elaborate explanations of these trends are provided.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Extended investigation of sol aging effect on TiO2 electron transporting layer and performances of perovskite solar cells

Highlights: • Conditions of deposition of compact sol-gel TiO{sub 2} significantly influence the parameters of perovskite cells. • Sol aging originally considered as beneficial was proved to be adverse due to no repeatability, defects and residual water. • Free from such disadvantages TiO{sub 2} made from fresh sol can support as good cell parameters. • Roughness of transparent conductive oxide influences the optimal thickness of electron transporting layer. - Abstract: Organic−inorganic hybrid perovskites have created significant opportunities for low-cost and high-performance solar cells. The electron transporting layer (ETL) is one of the main components of the solar cell, which selectively transports electrons and at the same time acts as a barrier for holes. This paper focuses on the ETL composed of titanium dioxide deposited by sol-gel method. In particular, perovskite solar cells with ETL from aged titanium sol revealed significant differences of short circuit current which is 8% higher than their counterpart with ETL from fresh sol. Analysis of ETL morphology by atomic force microscopy combined with electrochemical impedance spectroscopy and optical properties measurements enabled to determine the source of this diversity. Additionally, the role of roughness of transparent electrode was indicated. The in-depth material analysis revealed some disadvantages of the ETL material, originally considered as supporting higher photovoltaic performance. The results indicated several problems associated with hardly controlled aging conditions, defects and presence of residual water, strongly advocate for TiO{sub 2} ETL form the fresh sol, which after optimization can guarantee the same good solar cell performance.

14 SOLAR ENERGY↗
DOE OSTI2013

Structural contribution to the roughness of supersmooth crystal surface

Technological advances in processing crystals (Si, sapphire {alpha}-Al{sub 2}O{sub 3}, SiC, GaN, LiNbO{sub 3}, SrTiO{sub 3}, etc.) of substrate materials and X-ray optics elements make it possible to obtain supersmooth surfaces with a periodicity characteristic of the crystal structure. These periodic structures are formed by atomically smooth terraces and steps of nano- and subnanometer sizes, respectively. A model surface with such nanostructures is proposed, and the relations between its roughness parameters and the height of atomic steps are determined. The roughness parameters calculated from these relations almost coincide with the experimental atomic force microscopy (AFM) data obtained from 1 Multiplication-Sign 1 and 10 Multiplication-Sign 10 {mu}m areas on the surface of sapphire plates with steps. The minimum roughness parameters for vicinal crystal surfaces, which are due to the structural contribution, are calculated based on the approach proposed. A comparative analysis of the relief and roughness parameters of sapphire plate surfaces with different degrees of polishing is performed. A size effect is established: the relief height distribution changes from stochastic to regular with a decrease in the surface roughness.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2012

Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy

c-plane GaN films were grown by ammonia molecular beam epitaxy on metal-organic chemical vapor deposition templates for a wide range of NH{sub 3}:Ga flux ratios and growth temperatures, and the resulting films were characterized using atomic force microscopy, reflection high-energy electron diffraction, and transmission electron microscopy. Three distinct nitrogen-rich growth regimes - unstable layer-by-layer, quasi-stable step flow, and dislocation-mediated pitting - were identified based on the growth mode and film properties. In addition, step flow growth was observed under conditions of gallium droplet accumulation. The results indicate the existence of two regimes for step-flow growth of GaN by ammonia MBE - both gallium-rich and nitrogen-rich. Growth mode instabilities and mound formation were observed and are discussed in the context of a step-edge energy barrier to adatom diffusion over a terrace.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Silver Nanoparticles Formed in a Colloidal System and a Polymer Matrix

The growth kinetics and particle-size distribution of Ag particles in a polyvinyl alcohol (PVA) composite, PVA film, and aqueous sol were studied using UV and visible spectroscopy, atomic force microscopy, and dynamic light scattering. A hypsochromic shift (55 nm) of the Ag nanoparticle (NP) surface plasmon absorption maximum was measured on going from the PVA composite to the film. The kinetics of Ag NP formation and their sizes were shown to depend considerably on UV irradiation, ultrasound action, and PVA concentration. It was established that UV irradiation accelerated Ag NP formation in the presence of reductants and destroyed the resulting NPs with a deficit of reductant. Partial destruction of the Ag NPs occurred under the influence of ultrasound whereas ultrasound action after UV irradiation reduced Ag{sup +} on the clusters.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Strain effects on in-plane conductance of the topological insulator Bi{sub 2}Te{sub 3}

We investigated the correlation between electrical transport and mechanical stress in a topological insulator, Bi{sub 2}Te{sub 3}, using conductive probe atomic force microscopy in an ultrahigh vacuum environment. After directly measuring charge transport on the cleaved Bi{sub 2}Te{sub 3} surface, we found that the current density varied with applied load. Current mapping revealed a variation of the current on different terraces. The current density increased in the low-pressure regime and then decreased in the high-pressure regime. This variation of current density was explained in light of the combined effect of changes in the in-plane conductance due to spin–orbit coupling and hexagonal warping.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Carrier transport in graphite/Si{sub 3}N{sub 4}-nanobelt/PtIr Schottky barrier diodes

Understanding the roles of contacts and interfaces between metals and semiconductors is critically important for exploring nanostructure-based nanodevices. The present study shed some light on the dominated mechanism of size-dependent carrier transfer in the Schottky barrier diodes configured by the Pt-Ir/Si{sub 3}N{sub 4}-nanobelt/graphite (metal-semiconductor-metal (MSM)) sandwiched structure via a conductive atomic force microscopy using nanobelts with various thicknesses. The observed I-V behaviors suggested that the charge transports under the low and high biases were dominated by the reverse-biased Schottky barrier and space-charge-limited current (SCLC), respectively. The intermediate region between the low and high biases presented the transition between the Ohmic and SCLC behaviors, in which the ≡Si and =N dangling bonds acted as the defects within the Si{sub 3}N{sub 4} nanobelt surface are predominant in the charge transfer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Effect of power on growth of nanocrystalline silicon films deposited by VHF PECVD technique for solar cell applications

An investigation of the effect of power on the deposition of nanocrystalline silicon thin films were carried out using a gaseous mixture of silane and hydrogen in the 60MHz assisted VHF plasma enhanced chemical vapor deposition (PECVD) technique. The power was varied from 10 to 50 watt maintaining all other parameters constant. Corresponding layer properties w.r.t. material microstructure, optical, hydrogen content and electrical transport are studied in detail. The structural properties have been studied by Raman spectroscopy and x-ray diffraction (XRD). The presence of nano-sized crystals and their morphology have been investigated using atomic force microscopy (AFM). The role of bonded hydrogen content in the films have been studied from the results of Fourier transform infrared spectroscopy. It was observed from the results that with increase in power, crystalline volume fraction increases and crystallite size changes from 4 to 9 nm. The optical band gap varies from 1.7 to 2.1eV due to quantum confinement effect and which further can be explained with reduced hydrogen content. These striking features of nc-Si films can be used to fabricate stable thin film solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Bias-dependent interface roughening and its effect on electric bistability of organic devices

Atomic force microscopy (AFM), field-emission scanning electron microscopy, and energy dispersive X-Ray spectroscopy are used to study morphological and compositional variations of metal-organic interfaces in organic bistable devices. The results show that bias voltage causes rougher interfaces with new protrusions, and the switching phenomena origins from the evolution of these protrusions under external electric field. In order to exclude other possible factors, three types of bistable devices are designed and examined. In addition, metal-coated AFM probes are utilized to simulate the switching process, which yields similar results and corroborates our conclusion.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Assembly and Characterization of Well Defined High Molecular Weight Poly(p-phenylene) Polymer Brushes

The assembly and characterization of well-defined, end-tethered poly(p-phenylene) (PPP) brushes having high molecular weight, low polydispersity and high 1,4-stereoregularity are presented. The PPP brushes are formed using a precursor route that relies on either self-assembly or spin coating of high molecular weight (degrees of polymerizations 54, 146, and 238) end-functionalized poly(1,3-cyclohexadiene) (PCHD) chains from benzene solutions onto silicon or quartz substrates, followed by aromatization of the end-attached PCHD chains on the surface. The approach allows the thickness (grafting density) of the brushes to be easily varied. The dry brushes before and after aromatization are characterized by ellipsometry, atomic force microscopy, grazing angle attenuated total reflectance Fourier transform infrared spectroscopy, and UV-Vis spectroscopy. The properties of the PPP brushes are compared with those of films made using oligo-paraphenylenes and with ab initio density functional theory simulations of optical properties. Our results suggest conversion to fully aromatized, end-tethered PPP polymer brushes having effective conjugation lengths of 5 phenyl units.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Evolution of block-copolymer order through a moving thermal zone

We investigate block-copolymer (BCP) thin film ordering kinetics during annealing across a moving in-plane temperature gradient. We operate in the so-called cold zone annealing (CZA) regime, where ordering temperatures are above the glass-transition, but well below the order-disorder transition. By measuring the order through the in-plane gradient, using atomic force microscopy and grazing-incidence small-angle X-ray scattering (GISAXS), we confirm that CZA greatly enhances ordering kinetics, as compared to uniform oven annealing. The maximal ordering occurs over a narrow range of the heating-up phase, and not during the subsequent cooling phase. The large grain sizes obtained using CZA are due to enhanced kinetics, and not the preferential formation of certain grain orientations. Kinetic enhancement is apparent even below the bulk glass-transition temperature. We suggest that the in-plane temperature gradient drives enhanced kinetics.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Interaction of Nano-Sized Materials With Polymer Chains in Polymer-Nanocomposite Thin Films-An AFM Perspective

Nanocomposite thin films were prepared with polyurethane as a matrix and organically modified clay as a filler. The interfacial interaction between the exfoliated clay nanoplatelets and the polymeric chains has been investigated by using Atomic Force Microscopy (AFM). The nanoclay platelets show a preferential association with the hard domains of polyurethane matrix on the surface of the thin films. The pendant hydroxyl group on the nanoplatelets attract the isocyanate of the polyisocyanate and a urethane group is formed. This leads to the 'clouding' and 'entwining' of the nanoplatelets by the hard segmental chains. This is the first visual evidence of nanomaterial filler and polymer matrix interaction and it could open up a spectrum of novel property achievements in nanocomposite thin films. Also the understanding of this interaction can lead to more controlled architecture of nanocomposites.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Effect of antimony nano-scale surface-structures on a GaSb/AlAsSb distributed Bragg reflector

Effects of antimony crystallization on the surface of GaSb during low temperature molecular beam epitaxy growth are investigated. The geometry of these structures is studied via transmission electron and atomic force microscopies, which show the surface metal forms triangular-shaped, elongated nano-wires with a structured orientation composed entirely of crystalline antimony. By depositing antimony on a GaSb/AlAsSb distributed Bragg reflector, the field is localized within the antimony layer. Polarization dependent transmission measurements are carried out on these nano-structures deposited on a GaSb/AlAsSb distributed Bragg reflector. It is shown that the antimony-based structures at the surface favor transmission of light polarized perpendicular to the wires.

36 MATERIALS SCIENCE↗