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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Temperature dependent junction capacitance-voltage characteristics of Ni embedded TiN/SiO{sub 2}/p-Si metal–insulator–semiconductor structure

This work presents the junction capacitance–voltage characteristics of highly textured/epitaxial Ni nanoparticle embedded in TiN matrix (TiN(Ni)) metal-insulator-semiconductor TiN(Ni)/SiO{sub 2}/p-Si (100) heterojunction in the temperature range of 10–300 K. This heterojunction behaves as metal-semiconductor junction with unavoidable leakage through native oxide SiO{sub 2} layer. The clockwise hysteresis loop has been observed in the capacitance-voltage characteristics measured at various frequencies mainly due to presence of trap centers at the TiN(Ni)/SiO{sub 2} interface and these are temperature dependent. The spin-dependent trap charge effect at the interface influences the quadratic nature of the capacitance with magnetic field. The junction magnetocapacitance (JMC) is observed to be dependent on both temperature and frequency. The highest JMC of this heterojunction has been observed at 200 K at higher frequencies (100 kHz–1 MHz). It is found that there is not much effect of band structure modification under magnetic field causing the JMC.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Bias voltage dependence of the electron spin depolarization in quantum wires in the quantum Hall regime detected by the resistively detected NMR

We performed the resistively-detected nuclear magnetic resonance (RDNMR) to study the electron spin polarization in the non-equilibrium quantum Hall regime. By measuring the Knight shift, we derive source-drain bias voltage dependence of the electron spin polarization in quantum wires. The electron spin polarization shows minimum value around the threshold voltage of the dynamic nuclear polarization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al{sub 2}O{sub 3} atomic layer deposition overgrowth

We discuss possibilities of adjustment of a threshold voltage V{sub T} in normally off GaN high-electron mobility transistors (HEMTs) without compromising a maximal drain current I{sub DSmax}. Techniques of a low power plasma or thermal oxidation of 2-nm thick AlN cap over 3-nm thick AlGaN barrier are developed and calibrated for a thorough oxidation of the cap with a minimal density of surface donors at the inherent oxide-semiconductor interface. It has been shown that while a thermal oxidation technique leads to the channel and/or interface degradation, low density of surface donors and scalability of V{sub T} with additionally overgrown Al{sub 2}O{sub 3} may be obtained for plasma oxidized HEMTs. With 10-nm thick Al{sub 2}O{sub 3} deposited at 100 °C by atomic-layer deposition, we obtained V{sub T} of 1.6 V and I{sub DSmax} of 0.48 A/mm at a gate voltage of V{sub GS} = 8 V. Density of surface donors was estimated to be about 1.2 × 10{sup 13} cm{sup −2}, leaving most of the negative polarization charge at the semiconductor surface uncompensated. Further reduction of surface donors may be needed for even higher V{sub T}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

An analytical model for analyzing the current-voltage characteristics of bulk heterojunction organic solar cells

An analytical model for analyzing the current-voltage (J-V) characteristics of bulk heterojunction (BHJ) organic solar cells is developed by incorporating exponential photon absorption, dissociation efficiency of bound electron-hole pairs (EHPs), carrier trapping, and carrier drift and diffusion in the photon absorption layer. Modified Braun's model is used to compute the electric field-dependent dissociation efficiency of the bound EHPs. The charge carrier concentrations and hence the photocurrent are calculated by solving the carrier continuity equation for both holes and electrons in the organic layer. The overall load current is calculated considering the actual solar spectrum and voltage dependent forward dark current. The model is verified by published experimental results. The efficiency of the P3HT:PCBM based solar cells critically depends on the dissociation of bound EHPs. On the other hand, cells made of a blend of the conjugated polymer (PCDTBT) with the soluble fullerene derivative (PCBM) show nearly unity dissociation efficiency, and their cell efficiency strongly depends on the charge collection efficiency. The effects of carrier lifetimes on the performance of PCDTBT solar cells have also been studied. The model is also used to investigate the effect of titanium oxide (TiO{sub x}) layer (at the back contact) on the J-V characteristics of PCDTBT solar cells. The results of this paper indicate that improvement of charge carrier transport in PCDTBT:PCBM blend and dissociation of bound EHPs in P3HT:PCBM blend are extremely important to increase the power conversion efficiency of the respective BHJ solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-performance, low-operating voltage, and solution-processable organic field-effect transistor with silk fibroin as the gate dielectric

We report the use of silk fibroin as the gate dielectric material in solution-processed organic field-effect transistors (OFETs) with poly(3-hexylthiophene) (P3HT) as the semiconducting layer. Such OFETs exhibit a low threshold of −0.77 V and a low-operating voltage (0 to −3 V) compatible with the voltage level commonly-used in current electronic industry. The carrier mobility of such OFETs is as high as 0.21 cm{sup 2} V{sup −1} s{sup −1} in the saturation regime, comparable to the best value of P3HT-based OFETs with dielectric layer that is not solution-processed. The high-performance of this kind of OFET is related with the high content of β strands in fibroin dielectric which leads to an array of fibers in a highly ordered structure, thus reducing the trapping sites at the semiconductor/dielectric interface.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Measurement of the internal stress and electric field in a resonating piezoelectric transformer for high-voltage applications using the electro-optic and photoelastic effects

The high output voltages from piezoelectric transformers are currently being used to accelerate charged particle beams for x-ray and neutron production. Traditional methods of characterizing piezoelectric transformers (PTs) using electrical probes can decrease the voltage transformation ratio of the device due to the introduction of load impedances on the order of hundreds of kiloohms to hundreds of megaohms. Consequently, an optical diagnostic was developed that used the photoelastic and electro-optic effects present in piezoelectric materials that are transparent to a given optical wavelength to determine the internal stress and electric field. The combined effects of the piezoelectric, photoelastic, and electro-optic effects result in a time-dependent change the refractive indices of the material and produce an artificially induced, time-dependent birefringence in the piezoelectric material. This induced time-dependent birefringence results in a change in the relative phase difference between the ordinary and extraordinary wave components of a helium-neon laser beam. The change in phase difference between the wave components was measured using a set of linear polarizers. The measured change in phase difference was used to calculate the stress and electric field based on the nonlinear optical properties, the piezoelectric constitutive equations, and the boundary conditions of the PT. Maximum stresses of approximately 10 MPa and electric fields of as high as 6 kV/cm were measured with the optical diagnostic. Measured results were compared to results from both a simple one-dimensional (1D) model of the piezoelectric transformer and a three-dimensional (3D) finite element model. Measured stresses and electric fields along the length of an operating length-extensional PT for two different electrical loads were within at least 50 % of 3D finite element simulated results. Additionally, the 3D finite element results were more accurate than the results from the 1D model for a wider range of electrical load impedances under test.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Calculation and measurement of a neutral air flow velocity impacting a high voltage capacitor with asymmetrical electrodes

This paper deals with the effects surrounding phenomenon of a mechanical force generated on a high voltage asymmetrical capacitor (the so called Biefeld-Brown effect). A method to measure this force is described and a formula to calculate its value is also given. Based on this the authors derive a formula characterising the neutral air flow velocity impacting an asymmetrical capacitor connected to high voltage. This air flow under normal circumstances lessens the generated force. In the following part this velocity is measured using Particle Image Velocimetry measuring technique and the results of the theoretically calculated velocity and the experimentally measured value are compared. The authors found a good agreement between the results of both approaches.

42 ENGINEERING↗
DOE OSTI2014

Analysis of bias voltage dependent spectral response in Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V{sub bias}) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V{sub bias} for Ga{sub 0.51}In{sub 0.49}P/Ga{sub 0.99}In{sub 0.01}As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V{sub bias} measurements. The profile of SR−V{sub bias} curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO{sub 2} structure using fast I-V measurement

This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO{sub 2} n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V{sub t}) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V{sub t} shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting Hf{sub x}Zr{sub 1−x}O{sub 2} as gate oxide, can reduce the charge/discharge effect.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

Solution-processed sodium alginate electrolyte film shows a high proton conductivity of ∼5.5 × 10{sup −3} S/cm and a high lateral electric-double-layer (EDL) capacitance of ∼2.0 μF/cm{sup 2} at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2 cm{sup 2} V{sup −1} s{sup −1}, 2.8 × 10{sup 6}, and 130 mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Current-voltage spectroscopy of dopant-induced quantum-dots in heavily n-doped junctionless nanowire transistors

We demonstrate current-voltage spectroscopy of dopant-induced quantum dots in heavily n-doped junctionless nanowire transistors (JNTs) at low temperatures. The similar multiple-split current peak features for both single-channel and multiple-channel JNTs are found at the initial stage of conduction below the temperature of 75 K. The temperature stability of the pinch-off voltage, affected by activated electrons from defects and donor ionization, has been effectively improved by the 20 nm-width nanowires. The transition temperature for single electron tunneling to thermal activated transport is dependent on the ionization energy of dopants.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Anomalous reduction of the switching voltage of Bi-doped Ge{sub 0.5}Se{sub 0.5} ovonic threshold switching devices

Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge{sub 0.5}Se{sub 0.5} thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E{sub g}{sup opt}) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V{sub th}) by over 50%. In addition, E{sub g}{sup opt} was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Deposition and characterization of zirconium nitride (ZrN) thin films by reactive magnetron sputtering with linear gas ion source and bias voltage

Zirconium nitride thin films have been prepared on stainless steel substrate (304L grade) by reactive cylindrical magnetron sputtering method with Gas Ion Source (GIS) and bias voltage using optimized coating parameters. The structure and surface morphologies of the ZrN films were characterized using X-ray diffraction, atomic microscopy and scanning electron microscopy. The adhesion property of ZrN thin film has been increased due to the GIS. The coating exhibits better adhesion strength up to 10 N whereas the ZrN thin film with bias voltage exhibits adhesion up to 500 mN.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Room temperature resistive state switching with hysteresis in GdMnO{sub 3} thin film with low threshold voltage

In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO{sub 3} grown on NdGaO{sub 3} substrate. The switched states have a resistance ratio ≈10{sup 3}. The switching is unipolar in nature, with a low set voltage <3 V, while the reset voltage <0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High-voltage field effect transistors with wide-bandgap β-Ga{sub 2}O{sub 3} nanomembranes

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Low-voltage-operation avalanche photodiode based on n-gallium oxide/p-crystalline selenium heterojunction

In this study, we demonstrate the avalanche multiplication phenomenon in a crystalline-selenium (c-Se)-based heterojunction photodiode. The carrier injection from an external electrode, which is considered to be the major factor contributing to dark current at a high electric field, was significantly decreased by employing a thin n-type Ga{sub 2}O{sub 3} layer with a high hole-injection barrier. The fabricated Ga{sub 2}O{sub 3}/c-Se diode exhibited extremely high external quantum efficiency of over 100% in the short-wavelength region at a relatively low reverse-bias voltage of ∼20 V. Furthermore, Sn-doping of the Ga{sub 2}O{sub 3} layer increases the carrier concentration; hence, the resulting device has a lower threshold voltage for avalanche multiplication.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗