Results for “Switch” — Page 77

DOE OSTI2016

Laser based analysis using a passively Q-switched laser employing analysis electronics and a means for detecting atomic optical emission of the laser media

A device for Laser based Analysis using a Passively Q-Switched Laser comprising an optical pumping source optically connected to a laser media. The laser media and a Q-switch are positioned between and optically connected to a high reflectivity mirror (HR) and an output coupler (OC) along an optical axis. The output coupler (OC) is optically connected to the output lens along the optical axis. A means for detecting atomic optical emission comprises a filter and a light detector. The optical filter is optically connected to the laser media and the optical detector. A control system is connected to the optical detector and the analysis electronics. The analysis electronics are optically connected to the output lens. The detection of the large scale laser output production triggers the control system to initiate the precise timing and data collection from the detector and analysis.

47 OTHER INSTRUMENTATION↗

DOE OSTI2016

Solid-state active switch matrix for high energy, moderate power battery systems

A battery management system employs electronic switches and capacitors. No traditional cell-balancing resistors are used. The BMS electronically switches individual cells into and out of a module of cells in order to use the maximum amount of energy available in each cell and to completely charge and discharge each cell without overcharging or under-discharging.

25 ENERGY STORAGE↗

DOE OSTI2015

R&D100: 6.5kV Enhancement-Mode Silicon Carbide JFET Switch

Researchers at Sandia National Laboratories have partnered with United Silicon Carbide, Inc. to combine advanced materials with novel manufacturing ideas to build a new product for significantly more efficient power conversion. Harnessing the unique features of silicon carbide, this first of its kind device allows higher voltage switching, and reductions in switching losses to significantly boost the efficiency and reliability of power generation and power conversion.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2017

High-density, fail-in-place switches for computer and data networks

A structure for a network switch. The network switch may include a plurality of spine chips arranged on a plurality of spine cards, where one or more spine chips are located on each spine card; and a plurality of leaf chips arranged on a plurality of leaf cards, wherein one or more leaf chips are located on each leaf card, where each spine card is connected to every leaf chip and the plurality of spine chips are surrounded on at least two sides by leaf cards.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2017

Switch device having a non-linear transmission line

Switching devices are provided. The switching devices include an input electrode, having a main electrode and a trigger electrode, and an output electrode. The main electrode and the trigger electrode are separated from the output electrode by a main gap and a trigger gap, respectively. During operation, the trigger electrode compresses and amplifies a trigger voltage signal causing the trigger electrode to emit a pulse of energy. This pulse of energy form plasma near the trigger electrode, either by arcing across the trigger gap, or by arcing from the trigger electrode to the main electrode. This plasma decreases the breakdown voltage of the main gap. Simultaneously, or near simultaneously, a main voltage signal propagates through the main electrode. The main voltage signal emits a main pulse of energy that arcs across the main gap while the plasma formed by the trigger pulse is still present.

47 OTHER INSTRUMENTATION↗

DOE OSTI2018

Apparatus and method for fusion of compute and switching functions of exascale system into a single component by using configurable network-on-chip fabric with distributed dual mode input-output ports and programmable network interfaces

Described is an apparatus which comprises: a Network-On-Chip fabric using crossbar switches, having distributed ingress and egress ports; and a dual-mode network interface coupled to at least one crossbar switch, the dual-mode network interface is to include: a dual-mode circuitry; a controller operable to: configure the dual-mode circuitry to transmit and receive differential signals via the egress and ingress ports, respectively, and configure the dual-mode circuitry to transmit and receive signal-ended signals via the egress and ingress ports, respectively.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2018

Magnetoelectric memory cells with domain-wall-mediated switching

A magnetoelectric memory cell with domain-wall-mediated switching is implemented using a split gate architecture. The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic (MEAF) active layer. An extension of this architecture applies to multiple-gate linear arrays that can offer advantages in memory density, programmability, and logic functionality. Applying a small anisotropic in-plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching.

42 ENGINEERING↗

DOE OSTI2018

Comparison of 22 kHz and 85 kHz 50 kW Wireless Charging System Using Si and SiC Switches for Electric Vehicle

Fast charging in transportation application requires high-power (>50 kW) operation. The overall size of wireless charging systems (WCS) must increase to meet the high-power requirement. As a result, high power systems produce more electromagnetic field (EMF) emissions. Although higher operating frequencies (85 kHz) reduce the size of inductors and capacitors, system losses tend to increase. High-power systems are traditionally investigated for 10 kHz to 22 kHz operation to reduce the switching loss in the converter, and conductive and magnetic losses in the power pad. The use of SiC MOSFETs reduces conduction and switching losses in the converter even at higher frequencies. In this paper, a comprehensive loss comparison of 50 kW wireless charging system is conducted for 85 kHz and 22 kHz operation of Si MOSFET and SiC MOSFET converters. Detailed performance indexes are compared analytically as a function of frequency and verified using FEA and PLECS. This comprehensive system level study shows that magnetic losses can be reduced significantly, and that EMF emission can be reduced by 50% by moving from 22 kHz to 85 kHz. Moreover, the system requires 50% less copper and allows a significant reduction in the size of the primary and secondary filter capacitor at 85 kHz. The results show that the system efficiency at 85 kHz can be increased by 21% compared to 22 kHz operation by using a SiC MOSFET converter.

Shahidul haque, Moinul↗

DOE OSTI2019

Switching strategy for increased efficiency of power converters

Systems and methods for operating a power converter are provided. A DC to AC converter can include an inner converter and an outer converter. The inner converter can include an isolation transformer a first plurality of switching devices. The outer converter can include a second plurality of switching devices. A control method can include determining an output voltage of the outer converter. The control method can further include controlling operation of the inner converter based at least in part on the output voltage of the outer converter.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2019

Three-dimensional co-axial linear photonic switch

Techniques, systems, and devices are disclosed that relate to coaxial photoconductive switch modules. The coaxial photoconductive switch may include an outer conductor, an inner conductor, and a photoconductive material positioned between the inner conductor and the outer conductor. The inner conductor, the outer conductor, and the photoconductive material have a predetermined height. A bias voltage may be applied between the inner conductor and the outer conductor. When light of a predetermined wavelength and a predetermined intensity is incident on the photoconductive material, the photoconductive material may break down allowing a current to flow through the photoconductive material between the inner conductor and the outer conductor.

Conway, Adam↗

DOE OSTI2019

Data center coolant switch

A data center cooling system has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during a first mode. When an appropriate time has been reached to switch from the first mode to a second mode, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid (compared to the first fluid). It has a second heat transfer fluid freezing point, lower than the first heat transfer fluid freezing point, and sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

42 ENGINEERING↗

DOE OSTI2019

High-density, fail-in-place switches for computer and data networks

A structure for a network switch. The network switch may include a plurality of spine chips arranged on a plurality of spine cards, where one or more spine chips are located on each spine card; and a plurality of leaf chips arranged on a plurality of leaf cards, wherein one or more leaf chips are located on each leaf card, where each spine card is connected to every leaf chip and the plurality of spine chips are surrounded on at least two sides by leaf cards.

Coteus, Paul W.↗

DOE OSTI2019

Data center coolant switch

A data center cooling system has an indoor portion wherein heat is absorbed from components in the data center, and an outdoor heat exchanger portion wherein outside air is used to cool a first heat transfer fluid (e.g., water) present in at least the outdoor heat exchanger portion of the cooling system during a first mode. When an appropriate time has been reached to switch from the first mode to a second mode, the outdoor heat exchanger portion of the data cooling system is switched to a second heat transfer fluid, which is a relatively low performance heat transfer fluid (compared to the first fluid). It has a second heat transfer fluid freezing point, lower than the first heat transfer fluid freezing point, and sufficiently low to operate without freezing when the outdoor air temperature drops below a first predetermined relationship with the first heat transfer fluid freezing point.

42 ENGINEERING↗

DOE OSTI2019

Resistive switching memory device

Provided herein are resistive switching devices comprising a nanocomposite, an inert electrode and an active electrode. Also provided are methods for preparing and using the disclosed resistive switching devices.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Bi-triaxial photoconductive switch module

Methods, systems, and devices describe bi-triaxial photoconductive switch modules that that eliminate the need for external DC blocking capacitors, while providing a highly compact structure that can produce bipolar output waveforms conducive to feeding to radio-frequency (RF) devices, such as antennas. Some implementations of the disclosed bi-triaxial photoconductive switch modules utilize unified cast-in-place capacitors that can be designed with an appropriate geometry, volume and orientation to provide desired energy storage capacity while eliminating or reducing parasitics.

42 ENGINEERING↗

DOE OSTI2020

Cold cathode switching device and converter

A cold-cathode switching device is presented. The cold-cathode switching device includes a housing defining a chamber; an ionizable gas disposed in the chamber; and a plurality of electrodes disposed in the chamber. The plurality of electrodes includes a cathode and an anode defining a discharge gap, and wherein at least one of the cathode and anode comprises a material that is liquid at an operating temperature of the cathode or the anode.

42 ENGINEERING↗

DOE OSTI2020

Photonic-crystal-fiber-delivered laser-triggered high-voltage gas switch

A photonic-crystal-fiber-delivered laser-triggered high-voltage gas switch can deliver a peak irradiance of greater than 5.1×1011 W/cm2 to the AK gap for a laser having a wavelength of 1064 nm. The switch is capable of operating at pressures up to 2200 psi; voltages across the gap of greater than 200 kV; operation at less than 70% self-break voltage; shot-to-shot jitter of less than 3 ns; AK gap distances of 3 mm or smaller; and triggering via a fiber-delivered laser pulse energy of as low as 500 μJ.

42 ENGINEERING↗

DOE OSTI2020

High-density, fail-in-place switches for computer and data networks

A structure for a network switch. The network switch may include a plurality of spine chips arranged on a plurality of spine cards, where one or more spine chips are located on each spine card; and a plurality of leaf chips arranged on a plurality of leaf cards, wherein one or more leaf chips are located on each leaf card, where each spine card is connected to every leaf chip and the plurality of spine chips are surrounded on at least two sides by leaf cards.

42 ENGINEERING↗