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At least 1,387 records · Page 77

Strain effects on in-plane conductance of the topological insulator Bi{sub 2}Te{sub 3}

We investigated the correlation between electrical transport and mechanical stress in a topological insulator, Bi{sub 2}Te{sub 3}, using conductive probe atomic force microscopy in an ultrahigh vacuum environment. After directly measuring charge transport on the cleaved Bi{sub 2}Te{sub 3} surface, we found that the current density varied with applied load. Current mapping revealed a variation of the current on different terraces. The current density increased in the low-pressure regime and then decreased in the high-pressure regime. This variation of current density was explained in light of the combined effect of changes in the in-plane conductance due to spin–orbit coupling and hexagonal warping.

36 MATERIALS SCIENCE↗

Dependence of inverse-spin Hall effect and spin-rectified voltage on tantalum thickness in Ta/CoFeB bilayer structure

Ta-layer thickness (t{sub Ta}) dependence of the measured DC voltage V from the inverse-spin Hall effect (ISHE) in Ta/CoFeB bilayer structure is experimentally investigated using the ferromagnetic resonance in the TE{sub 011} resonant cavity. The ISHE signals excluding the spin-rectified effect (SRE) were separated from the fitted curve of V against t{sub Ta}. For t{sub Ta} ≈ λ{sub Ta} (Ta-spin diffusion length = 2.7 nm), the deviation in ISHE voltage V{sub ISH} between the experimental and theoretical values is significantly increased because of the large SRE contribution, which also results in a large deviation in the spin Hall angle θ{sub SH} (from 10% to 40%). However, when t{sub Ta} ≫ λ{sub Ta}, the V{sub ISH} values are consistent with theoretical values because the SRE terms become negligible, which subsequently improves the accuracy of the obtained θ{sub SH} within 4% deviation. The results will provide an outline for an accurate estimation of the θ{sub SH} for materials with small λ value, which would be useful for utilizing the spin Hall effect in a 3-terminal spintronic devices in which magnetization can be controlled by in-plane current.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High‐Performance Al–S Batteries by Spin Polarization Modulation via Catalytic Ni‐MoS 2 Nanosheets

Aluminum–sulfur (Al–S) batteries catalysts with adsorption and catalytic capabilities can effectively improve the slow redox kinetics, but the current research often ignores the effect of optimizing the electronic structure of the catalyst on improving charge transfer and adsorption. Here, in this study, Ni-doped monolayer MoS 2 nanosheets are synthesized and used as a catalytic additive for the sulfur cathode. The addition of Ni promotes spin splitting of 4d orbital of Mo, thereby affecting polarization degree of the basal plane sulfur and making it change from a low spin state to a high spin one. This high spin configuration raises the electron energy level and provides an active electron state to react with aluminum polysulfides (AlPSs), which optimizes the adsorption energy. At the same time, it accelerates electron transfer and lowers the energy barrier for the overall conversion of the polysulfides. Benefiting from these features, Al–S batteries based on rationally designed S@Ni-MoS 2 /C cathodes exhibit a high initial capacity (1603.0 mAh g −1 at 0.5 A g −1 ) and extraordinary cycling stability (0.035% capacity decay rate during 2000 cycles). This study showcases a spin-polarized electronic structure control strategy to enhance catalytic activity, providing a viable approach for developing efficient catalysts for practical Al–S batteries.

Aluminum-sulfur batteries↗

Development Of Non-Invasive Beam Diagnostics By Quantum Optics-Based Detection

We report our effort and latest progress developing diagnostics using quantum optics-based detection method for determining the spatial properties and current of electron beams. As electrons pass through a dilute vapor of rubidium atoms, their magnetic field perturb the atomic spin’s quantum state and causes polarization rotation of a laser resonant with an optical transition of the atoms. By measuring the polarization rotation angle across the laser beam, we recreate a 2D projection of the magnetic field and use it to determine the e-beam position, size and total current. We tested this method for an e-beam with currents ranging from 30 to 110 µA. Our study shows this approach is insensitive to electron kinetic energy, and is initially verified experimentally between 10 to 20 keV. A different approach was also performed with highly excited rubidium atoms in Rydberg states through a coherent two photon process. We use this detection scheme to measure the electric field generated by a

Zhang, S. [Thomas Jefferson National Accelerator F↗

Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it doesn’t require high-density current to go through the tunnel junction. For perpendicular MRAM, however, SOT driven switching of the free layer requires an external in-plane field, which poses limitation for viability in practical applications. Here we demonstrate field-free magnetization switching of a perpendicular magnet by utilizing an Iridium (Ir) layer. The Ir layer not only provides SOTs via spin Hall effect, but also induce interlayer exchange coupling with an in-plane magnetic layer that eliminates the need for the external field. Such dual functions of the Ir layer allows future build-up of magnetoresistive stacks for memory and logic applications. Experimental observations show that the SOT driven field-free magnetization reversal is characterized as domain nucleation and expansion. Micromagnetic modeling is carried out to provide in-depth understanding of the perpendicular magnetization reversal process in the presence of an in-plane exchange coupling field.

Science & Technology - Other Topics↗

Computational methods based on density functional theory for reactions and processes involving electronic spin (Final Technical Report)

This award supports one post-doctoral researcher for 1.5 years. Publications that acknowledge this grant: Refs. 1–14. Refs. 3,10,12 assess current methodology for the evaluation of magnetic exchange couplings in transition metal complexes. In particular, Ref. 10 validates the use of an approximate (non-iterative) Green’s function approach for the calculation of magnetic exchange couplings and will be the foundation for Thrust 2 in this proposal. Refs. 3 and 12 focus on widely used density functional approaches based on the standard energy differences methodology for the particular case of oxo-bridged Fe(III) complexes. Refs. 2,4–7,11 apply current methodologies to problems of practical interest in molecular magnetism. Ref. 13 presents a methodology to explicitly simulate the dynamics of open quantum systems within density functional theory (DFT) calculations based on the Liouville-von Neumann equation of motion for quantum systems driven out-of-equilibrium. Ref. 8 uses non-collinear spin DFT to explain the mechanical behavior of magnetic mono-atomic Pt wires produced in break-junction experiments in the presence of a magnetic field.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Ferroelectric Control of Interface Spin Filtering in Multiferroic Tunnel Junctions

The electronic reconstruction occurring at oxide interfaces may be the source of interesting device concepts for future oxide electronics. Among oxide devices, multiferroic tunnel junctions are being actively investigated as they offer the possibility to modulate the junction current by independently controlling the switching of the magnetization of the electrodes and of the ferroelectric polarization of the barrier. In this Letter, we show that the spin reconstruction at the interfaces of a La 0.7 Sr 0.3 MnO 3 /BaTiO 3 /La 0.7 Sr 0.3 MnO 3 multiferroic tunnel junction is the origin of a spin filtering functionality that can be turned on and off by reversing the ferroelectric polarization. The ferroelectrically controlled interface spin filter enables a giant electrical modulation of the tunneling magnetoresistance between values of 10% and 1000%, which could inspire device concepts in oxides-based low dissipation spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enhanced self-repairing capability of sol-gel derived SrTiO{sub 3}/nano Al{sub 2}O{sub 3} composite films

SrTiO{sub 3}/nano Al{sub 2}O{sub 3} inorganic nanocomposites were prepared by using a conventional sol-gel spin coating process. For comparison, SrTiO{sub 3} films doped by equivalent amount of sol-Al{sub 2}O{sub 3} have also been investigated. Aluminum deposited by using vacuum evaporation was used as the top electrode. The nanocomposites exhibited a significantly enhanced dielectric strength of 506.9 MV/m, which was increased by 97.4% as compared with the SrTiO{sub 3} films doped with sol-Al{sub 2}O{sub 3}. The leakage current maintained of the same order of microampere until the ultimate breakdown of the nanocomposites. The excellent electrical performances are ascribed to the anodic oxidation reaction in origin, which can repair the internal and/or surface defects of the films.

36 MATERIALS SCIENCE↗

Pion-nucleon scattering in baryon chiral perturbation theory combined with the 1/𝑁 𝑐 expansion

This work implements the combined baryon chiral perturbation theory (BChPT) and 1/𝑁 𝑐 expansions for pion-nucleon elastic scattering. The effective theory is based on the baryon sector dynamical spin-flavor 𝑆⁢𝑈⁡(4) symmetry emergent in the large 𝑁 𝑐 limit, whose breaking is controlled by the 1/𝑁 𝑐 expansion. The noncommutativity of the chiral and 1/𝑁 𝑐 expansions in unitarity corrections (loops) requires a linking of both expansions. As it was shown in the case of baryon masses and currents, the natural linking is the 𝜉 expansion, in which 𝒪⁡(𝑝) = 𝒪⁡(1/𝑁 𝑐 ) = 𝒪⁡(𝜉). The spin-flavor symmetry requires that the ground state baryons span an 𝑆⁢𝑈⁡(4) symmetric irreducible representation which implies that in particular 𝑁 and Δ are active degrees of freedom in the effective theory. The scattering amplitude is expanded to the next-to-next-to leading order in the 𝜉 expansion, corresponding to the one-loop contributions with the leading-order Lagrangian. The results are given for generic 𝑁 𝑐 in order to demonstrate the consistency of the framework. The spin-flavor symmetry plays a central role in maintaining the consistency of the effective theory with respect to the 1/𝑁 𝑐 expansion. This consistency manifests itself in an improvement in the convergence of the low energy expansion with respect to the case of the ordinary BChPT without an explicit dynamical Δ, which is known to be inconsistent with the constraints of 𝑁 𝑐 scaling. Fits to the 𝜋⁢𝑁 → 𝜋⁢𝑁, 𝑆, 𝑃, and 𝐷 partial wave amplitudes from the SAID data base are finally used to test the framework and to determine the energy range of its applicability.

Jayakodige, D. [Hampton Univ., Hampton, VA (United↗

Cr-Doped Ge-Core/Si-Shell Nanowire: An Antiferromagnetic Semiconductor

An antiferromagnet offers many important functionalities such as opportunities for electrical control of magnetic domains, immunity from magnetic perturbations, and fast spin dynamics. Introducing some of these intriguing features of an antiferromagnet into a low dimensional semiconductor core–shell nanowire offers an exciting pathway for its usage in antiferromagnetic semiconductor spintronics. Here, using a quantum mechanical approach, we predict that the Cr-doped Ge-core/Si-shell nanowire behaves as an antiferromagnetic semiconductor. In this work, the origin of antiferromagnetic spin alignments between Cr is attributed to the superexchange interaction mediated by the p z orbitals of the Ge atoms that are bonded to Cr. A weak spin–orbit interaction was found in this material, suggesting a longer spin coherence length. The spin-dependent quantum transport calculations in the Cr-doped nanowire junction reveals a switching feature with a high ON/OFF current ratio (~41 times higher for the ON state at a relatively small bias of 0.83 V).

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Spin Dynamics of SCRPs in ZnO Quantum Dot–Organic Molecule Conjugates Studied with Pulsed EPR

Photogenerated spin-correlated radical pairs (SCRPs) are emerging as promising new candidates for Quantum Information Science applications, where they act as electron spin qubit pairs (SQPs). Historically, these pairs have been mostly investigated in natural photosynthesis and in molecular organic donor–(linker)–acceptor systems. Recently, we have shown that these spin pairs can also be observed by time-resolved electron-paramagnetic resonance (EPR) spectroscopy in hybrid inorganic–organic conjugates. The current study builds on recent work (ACS Nano, 2025, 19, 12194–12207), in which we systematically prepared hybrid inorganic–organic molecule systems with tunable geometries that can host SCRPs/SQPs. Here, we demonstrate using pulsed EPR spectroscopy that we can generate, study, and manipulate the spins in these photogenerated SCRPs hosted on highly tailorable inorganic–organic hybrid systems. Microwave pulse-based spin manipulation is the first step toward developing quantum computing and quantum sensing applications with these promising spin-based qubit materials, which can be reversibly photogenerated in highly spin-polarized states at moderate temperatures. An attractive feature of this new class of hybrid materials is that the g-factor of the unpaired electron spin in the ZnO QD (as part of the SCRP/SQP) can be adjusted using the quantum size effect in these QDs, which allows for the selective addressability of each spin in the SCRP using microwave pulses. Additionally, we also observed a difference between the g-values of the unpaired electron in the ZnO QD in the transient SCRP state and stable photoreduced state. We hypothesize that the unpaired electron in the SCRP is delocalized as a band-like conduction electron, while in the stable photoreduced state, the electron is delocalized in a shallow electron trap state.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A path to scaling helium-3 spin-exchange optical pumping

Polarized 3 He has contributed to breakthroughs in particle physics, neutron scattering, and lung imaging, mostly by optical pumping of liter quantities in valved cells or in sealed cells pumped in situ. Only metastability exchange optical pumping currently meets the demand for delivering large quantities of highly polarized 3 He to external volumes. Our development program is under way to achieve medium to large-scale spin-exchange optical pumping of 3 He. Thin-walled aluminosilicate cells placed in contact with thermal reservoirs inside a pressure vessel were optically pumped with kilowatt-scale lasers spectrally narrowed to match pressure-broadened absorption linewidths. We report here the key elements of this program and significant milestones: multi-liter volume valved cells that provide long longitudinal lifetimes that reached polarization as high as 85% inside a thermally stable and pressurized environment.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Spin Formability of High-Strength Aluminum Alloys for Aerospace Applications

Near-net-shape fabrication of launch vehicle tanks and aircraft fuselages is proposed to increase manufacturing rates of aerospace structures. Currently, cryogenic tank manufacturing relies on multi-piece construction requiring hundreds of meters of welds that increase both structural weight and inspection time. Metallic aircraft fuselages involve installation of tens of thousands of rivets resulting in long assembly times. NASA is pursuing spin and flow forming technologies for manufacturing such structures with minimal assembly. These processes enable domes and stiffened barrels to be fabricated using single-piece construction, offering significant manufacturing rate benefits over conventional methods. However, aluminum alloys with sufficient formability, such as Al 6061, tend to have insufficient strength for aerospace structural applications. In contrast, alloys with higher strength, such as Al 2139 and Al 2050, exhibit insufficient formability during ambient temperature forming. This study investigates the spin formability of competitive 5xxx- and 2xxx-series Al alloys, identifies defects impeding formability, and sheds light on future processing routes for successful forming.

Aluminum↗

Electrical, optical, and magnetic properties of amorphous yttrium iron oxide thin films and consequences for non-local resistance measurements

We present magnetic characterization, charge resistivity, and optical photoluminescence measurements on amorphous yttrium iron oxide thin films ( ⁠a-Y–Fe–O), with supporting comparisons to amorphous germanium (⁠ a-Ge) films. We measured magnetic properties with both SQUID magnetometry and polarized neutron reflectometry. These results not only confirm that a-Y–Fe–O is a disordered magnetic material with strong predominantly antiferromagnetic exchange interactions and a high degree of frustration, but also that it is best understood electrically as a disordered semiconductor. As with amorphous germanium, a-Y–Fe–O obeys expectations for variable-range hopping through localized electron states over a wide range of temperature. We also clarify the consequences of charge transport through such a semiconducting medium for non-local voltage measurements intended to probe spin transport in nominally insulating magnetic materials. We further compare non-local resistance measurements made with “quasi-dc” automated current reversal to ac measurements made with a lock-in amplifier. These show that the “quasi-dc” measurement has an effective ac current excitation with frequency up to approximately 22 Hz, and that this effective ac excitation can cause artifacts in these measurements including incorrect sign of the non-local resistance. Here, this comprehensive investigation of non-local resistance measurements in a-Y–Fe–O shows no evidence of spin transport on micrometer length scales, which is contrary to our original work, and in line with more recent investigations by other groups.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Emergent electric field induced by dissipative sliding dynamics of domain walls in a Weyl magnet

The dynamic motion of topological defects in magnets induces an emergent electric field, as exemplified by the continuous flow of skyrmion vortices. However, the electrodynamics underlying this emergent field remains poorly understood. In this context, magnetic domain walls—one-dimensional topological defects with two collective modes, sliding and spin-tilt—offer a promising platform for exploration. Here we demonstrate that the dissipative motion of domain walls under oscillatory current excitation generates an emergent electric field. We image domain patterns and quantify the domain-wall length under applied magnetic fields in mesoscopic devices based on the magnetic Weyl semimetal NdAlSi. These devices exhibit exceptionally strong domain-wall scattering and a pronounced emergent electric field, as observed in the imaginary component of the complex impedance. Spin dynamics simulations reveal that domain-wall sliding dominates over spin-tilting, in which the phase delay of the domain-wall motion with respect to the driving force impacts the emergent electric field. Our findings establish domain-wall dynamics as a platform for studying emergent electromagnetic fields and motivate further investigations of the coupled motion of magnetic solitons and conduction electrons.

Yamada, Rinsuke [The University of Tokyo, Japan]↗

Experimental evidence for nonspherical magnetic form factor in Ru 3 +

The Mott insulator ..alpha..-RuCl3 has generated great interest in the community due to its possible field-induced Kitaev quantum spin liquid state. Despite enormous effort spent trying to obtain the form of the low-energy Hamiltonian, there is currently no agreed upon set of parameters which is able to explain all of the data. A key piece of missing information lies in the determination of the magnetic form factor of Ru3+, particularly for a true quantitative treatment of inelastic neutron scattering data. Here we present the experimentally derived magnetic form factor of Ru3+ in the low spin 4d5 state using polarized neutron diffraction within the paramagnetic regime on high-quality single crystals of ..alpha..-RuCl3. We observe strong evidence of an anisotropic form factor, expected of the spin-orbit coupled jeff=12 ground state. We model the static magnetization density in increasing complexity from simple isotropic cases, to a multipolar expansion, and, finally, ab initio calculations of the generalized jeff=12 ground state. Comparison of both single ion models and inclusion of Cl- anions support the presence of hybridization of Ru3+ with the surrounding Cl- ligands.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electron beam characterization via quantum coherent optical magnetometry

We present a quantum optics-based detection method for determining the position and current of an electron beam. As electrons pass through a dilute vapor of rubidium atoms, their magnetic field perturbs the atomic spin's quantum state and causes polarization rotation of a laser resonant with an optical transition of the atoms. By measuring the polarization rotation angle across the laser beam, we recreate a 2D projection of the magnetic field and use it to determine the e-beam position, size, and total current. We tested this method for an e-beam with currents ranging from 30 to 110 μA. Our approach is insensitive to electron kinetic energy, and we confirmed that experimentally between 10 and 20 keV. In conclusion, this technique offers a unique platform for noninvasive characterization of charged particle beams used in accelerators for particle and nuclear physics research.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

First-principles and model simulation of all-optical spin reversal

All-optical spin switching is a potential trailblazer for information storage and communication at an unprecedented fast rate free of magnetic fields. However, the current wisdom is largely based on semiempirical models of effective magnetic fields and heat pulses, so it is difficult to provide high-speed design protocols for actual devices. In this paper we carry out a massively parallel first-principles and model calculation for 13 spin systems and magnetic layers, free of any effective field, to establish a simpler and alternative paradigm of laser-induced ultrafast spin reversal and to point out a path to a full-integrated photospintronic device. It is the interplay of the optical selection rule and sublattice spin orderings that underlines seemingly irreconcilable helicity-dependent and -independent switchings. Using realistic experimental parameters, we predict that strong ferrimagnets, in particular, Laves phase C15 rare-earth alloys, meet the telecommunication energy requirement of 10 fJ, thus allowing a cost-effective subpicosecond laser to switch spin in the gigahertz region.

36 MATERIALS SCIENCE↗