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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts

Understanding of the Schottky barriers formed at metal contact-InAs nanowire interfaces is of great importance for the development of high-performance InAs nanowire nanoelectronic and quantum devices. Here, we report a systematical study of InAs nanowire field-effect transistors (FETs) and the Schottky barrier heights formed at the contact-nanowire interfaces. The InAs nanowires employed are grown by molecular beam epitaxy and are high material quality single crystals, and the devices are made by directly contacting the nanowires with a series of metals of different work functions. The fabricated InAs nanowire FET devices are characterized by electrical measurements at different temperatures and the Schottky barrier heights are extracted from the measured temperature and gate-voltage dependences of the channel current. We show that although the work functions of the contact metals are widely spread, the Schottky barrier heights are determined to be distributed over 35–55 meV, showing a weak but not negligible dependence on the metals. The deduced Fermi level in the InAs nanowire channels is found to be in the band gap and very close to the conduction band. The physical origin of the results is discussed in terms of Fermi level pinning by the surface states of the InAs nanowires and a shift in pinned Fermi level induced by the metal-related interface states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

The polarization fields in wurtzite group III-nitrides strongly influence the optical properties of InAlGaN-based light emitters, e.g., the electron and hole wave function overlap in quantum wells. In this paper, we propose a new approach to determine these fields by capacitance-voltage measurements (CVM). Sheet charges generated by a change of the microscopic polarization at heterointerfaces influence the charge distribution in PIN junctions and therefore the depletion width and the capacitance. We show that it is possible to determine the strength and direction of the internal fields by comparing the depletion widths of two PIN junctions, one influenced by internal polarization fields and one without as a reference. For comparison, we conducted coupled Poisson/carrier transport simulations on the CVM of the polarization-influenced sample. We also demonstrate the feasibility and limits of the method by determining the fields in GaN/InGaN and GaN/AlGaN double heterostructures on (0001) c-plane grown by metal organic vapor phase epitaxy and compare both evaluation methods. The method yields (−0.50 ± 0.07) MV/cm for In{sub 0.08}Ga{sub 0.92}N/GaN, (0.90 ± 0.13) MV/cm for Al{sub 0.18}Ga{sub 0.82}N/GaN, and (2.0 ± 0.3) MV/cm for Al{sub 0.31}Ga{sub 0.69}N/GaN heterostructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al0.6Ga0.4Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

Zamiri, M. (ORCID:000000020042735X)↗
DOE OSTI2016

Magnetic properties and coercivity mechanism of Sm{sub 1-x}Pr{sub x}Co{sub 5} (x=0-0.6) nanoflakes prepared by surfactant-assisted ball milling

Sm{sub 1-x}Pr{sub x}Co{sub 5} (x=0-0.6) nanoflakes with CaCu{sub 5} structure were successfully prepared by surfactant-assisted high-energy ball milling (SAHEBM). The crystal structure and magnetic properties of Sm{sub 1-x}Pr{sub x}Co{sub 5} (x=0-0.6) nanoflakes were studied by X-ray diffraction and vibrating sample magnetometer. Effects of Pr addition on the structure, magnetic properties and coercivity mechanism of Sm{sub 1-x}Pr{sub x}Co{sub 5} nanoflakes were systematically investigated. XRD results show that all the nanoflakes have a hexagonal CaCu{sub 5}-type (Sm, Pr){sub 1}Co{sub 5} main phase and the (Sm, Pr){sub 2}Co{sub 7} impurity phase, and all of the samples exhibit a strong (00l) texture after magnetic alignment. As the Pr content increases, remanence firstly increases, then slightly reduced, while anisotropy field (H{sub A}) and H{sub ci} of decrease monotonically. Maximum energy product [(BH){sub max}] of the flakes increases first, peaks at 24.4 MGOe with Pr content of x = 0.4, then drops again. Magnetization behavior analysis indicate that the coercivity mechanism is mainly controlled by inhomogeneous domain wall pinning, and the pinning strength weakens with the increased Pr content, suggesting the great influence of H{sub A} on the coercivity of flakes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effect of gas ratio on tribological properties of sputter deposited TiN coatings

Titanium nitride (TiN) coatings were deposited on Si, corning glass, pins of mild steel (MS, ϕ3mm), aluminium (Al, ϕ4mm) and brass (ϕ6mm) substratesby DC magnetron sputtering. The argon and nitrogen (Ar:N{sub 2})gas ratio was precisely controlled by Mass Flow Controller (MFC) and was varied systematically at diffract values of 10:10,12:08, 16:04 and 18:02sccm. The structural properties of TiN coatings were characterized by X-ray diffraction (XRD) and its surface topography was studied using field emission scanning electron microscopy (FE-SEM). The tribological properties of TiN coatings were investigated using pin-on-disc tribometer.

36 MATERIALS SCIENCE↗
DOE OSTI2016

In-situ gallium-doping for forming p{sup +} germanium-tin and application in germanium-tin p-i-n photodetector

The in-situ Ga doping technique was used to form heavily p-type doped germanium-tin (Ge{sub 1−x}Sn{sub x}) layers by molecular beam epitaxy, avoiding issues such as Sn precipitation and surface segregation at high annealing temperatures that are associated with the alternative implant and anneal approach. In this way, an electrically active Ga concentration of up to ∼3.2 × 10{sup 20 }cm{sup −3} can be realized for Ge{sub 1−x}Sn{sub x}. The impacts of varying the Ga concentration on the crystalline quality and the mobility of p-type Ge{sub 1−x}Sn{sub x} were investigated. High crystalline quality Ge{sub 0.915}Sn{sub 0.085} can be realized with an active Ga concentration of up to ∼1.2 × 10{sup 20 }cm{sup −3}. More than 98% of the Sn atoms are located on substitutional lattice sites, although the substitutionality of Sn in p-type Ge{sub 1−x}Sn{sub x} decreases with an increasing Ga concentration. When the Ga concentration introduced is higher than 3.2 × 10{sup 20 }cm{sup −3}, excess Ga atoms cannot be substitutionally incorporated, and segregation of Ga and Sn towards the surface during growth is observed. The in-situ Ga-doped Ge{sub 0.915}Sn{sub 0.085} epitaxy was integrated in a Ge{sub 0.915}Sn{sub 0.085}-on-Si p-i-n (PIN) photodiode fabrication process, and well-behaved Ge{sub 0.915}Sn{sub 0.085}/Si PIN junction characteristics were obtained. A large forward-bias current to reverse bias current ratio of 6 × 10{sup 4} and a low reverse current (dark current) of 0.24 μA were achieved at V{sub bias} = −1 V.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Modeling and simulation of InGaN/GaN quantum dots solar cell

Currently, quantum dots have attracted attention in the field of optoelectronics, and are used to overcome the limits of a conventional solar cell. Here, an In{sub 0.25}Ga{sub 0.75}N/GaN Quantum Dots Solar Cell has been modeled and simulated using Silvaco Atlas. Our results show that the short circuit current increases with the insertion of the InGaN quantum dots inside the intrinsic region of a GaN pin solar cell. In contrary, the open circuit voltage decreases. A relative optimization of the conversion efficiency of 54.77% was achieved comparing a 5-layers In{sub 0.25}Ga{sub 0.75}N/GaN quantum dots with pin solar cell. The conversion efficiency begins to decline beyond 5-layers quantum dots introduced. Indium composition of 10 % improves relatively the efficiency about 42.58% and a temperature of 285 K gives better conversion efficiency of 13.14%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Controlling the stability of both the structure and velocity of domain walls in magnetic nanowires

For magnetic nanowire devices, the precise control of both domain wall (DW) motion and pinning behaviour is essential for reliable functional performance. The domain wall velocity and wall structure are typically sensitive to the driving field or spin-polarized current, and the pinning behaviour depends on the walls' structure and chirality, leading to variability in behaviour. Here, a systematic study combining experimental measurements and micromagnetic simulations of planar nanowires with small fixed-angle structural modulations on both edges was undertaken to study the domain wall reversal regime. A phase diagram for the reversal field as a function of modulation amplitude was obtained that shows that three DW reversal regime. A range of field and modulation amplitudes were identified in which stable DW reversal occurs, where the wall velocity is constant as a function of field and the wall structure is stable, which is well suited to applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films

Zinc oxide (ZnO) thin films have been reported to suffer from degradation in electrical properties, when exposed to elevated heat and humidity, often leading to failures of electronic devices containing ZnO films. This degradation appears to be linked to water and oxygen penetration into the ZnO film. However, a direct observation in the ZnO film morphological evolution detailing structural and chemical changes has been lacking. Here, we systematically investigated the chemical and morphological heterogeneities of ZnO thin films caused by elevated heat and humidity, simulating an environmental aging. X-ray fluorescence microscopy, X-ray absorption spectroscopy, grazing incidence small angle and wide angle X-ray scattering, scanning electron microscopy (SEM), ultra-high-resolution SEM, and optical microscopy were carried out to examine ZnO and Al-doped ZnO thin films on two different substrates—silicon wafers and flexible polyethylene terephthalate (PET) films. In the un-doped ZnO thin film, the simulated environmental aging is resulting in pin-holes. In the Al-doped ZnO thin films, significant morphological changes occurred after the treatment, with an appearance of platelet-shaped structures that are 100–200 nm wide by 1μm long. Synchrotron x-ray characterization further confirmed the heterogeneity in the aged Al-doped ZnO, showing the formation of anisotropic structures and disordering. X-ray diffraction and X-ray absorption spectroscopy indicated the formation of a zinc hydroxide in the aged Al-doped films. In conclusion, utilizing advanced characterization methods, our studies provided information with an unprecedented level of details and revealed the chemical and morphologically heterogeneous nature of the degradation in ZnO thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Doubling the critical current density in superconducting FeSe 0.5 Te 0.5 thin films by low temperature oxygen annealing

Iron chalcogenide superconducting thin films and coated conductors are attractive for potential high field applications at liquid helium temperature for their high critical current densities J c , low anisotropies, and relatively strong grain couplings. Embedding flux pinning defects is a general approach to increase the in-field performance of superconductors. However, many effective pinning defects can adversely affect the zero field or self-field J c , particularly in cuprate high temperature superconductors. Here, we report the doubling of the self-field J c in FeSe 0.5 Te 0.5 films by low temperature oxygen annealing, reaching ~3 MA/cm 2 . In-field performance is also dramatically enhanced. In conclusion, our results demonstrate that low temperature oxygen annealing is a simple and cost-efficient post-treatment technique which can greatly help to accelerate the potential high field applications of the iron-based superconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Note: Coincidence measurements of 3 He and neutrons from a compact D-D neutron generator

Tagging of neutrons (2.45 MeV) with their associated 3He particles from deuterium-deuterium (D-D) fusion reactions has been demonstrated in a compact neutron generator setup enabled by a high brightness, microwave-driven ion source with a high fraction of deuterons. Energy spectra with well separated peaks of the D-D fusion reaction products, 3 He, tritons, and protons, were measured with a silicon PIN diode. The neutrons were detected using a liquid scintillator detector with pulse shape discrimination. In this work, by correlating the 3 He detection events with the neutron detection in time, we demonstrated the tagging of emitted neutrons with 3 He particles detected with a Si PIN diode detector mounted inside the neutron generator vacuum vessel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Theory of the spatial transfer of interface-nucleated changes of dynamical constraints and its consequences in glass-forming films

We formulate a new theory for how caging constraints in glass-forming liquids at a surface or interface are modified and then spatially transferred, in a layer-by-layer bootstrapped manner, into the film interior in the context of the dynamic free energy concept of the Nonlinear Langevin Equation (NLE) theory approach. The dynamic free energy at any mean location (cage center) involves contributions from two adjacent layers where confining forces are not the same. At the most fundamental level of the theory, the caging component of the dynamic free energy varies essentially exponentially with distance from the interface, saturating deep enough into the film with a correlation length of modest size and weak sensitivity to the thermodynamic state. This imparts a roughly exponential spatial variation of all the key features of the dynamic free energy required to compute gradients of dynamical quantities including the localization length, jump distance, cage barrier, collective elastic barrier, and alpha relaxation time. The spatial gradients are entirely of dynamical, not structural or thermodynamic, origin. The theory is implemented for the hard sphere fluid and diverse interfaces which can be a vapor, a rough pinned particle solid, a vibrating (softened) pinned particle solid, or a smooth hard wall. Their basic description at the level of the spatially heterogeneous dynamic free energy is identical, with the crucial difference arising from the first layer where dynamical constraints can be weakened, softened, or hardly changed depending on the specific interface. Numerical calculations establish the spatial dependence and fluid volume fraction sensitivity of the key dynamical property gradients for five different model interfaces. A comparison of the theoretical predictions for the dynamic localization length and glassy modulus with simulations and experiments for systems with a vapor interface reveals good agreement. Finally, the present advance sets the stage for using the Elastically Collective NLE theory to make quantitative predictions for the alpha relaxation time gradient, decoupling phenomena, T g gradient, and many film-averaged properties of both model and experimental (colloids, molecules, and polymers) systems with diverse interfaces and chemical makeup.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Relaxation of a single defect spin by the low-frequency gyrotropic mode of a magnetic vortex

We excite the gyrotropic mode of a magnetic vortex and observe the resulting effect on the spin state of a nearby nitrogen-vacancy (NV) defect in diamond. Thin permalloy disks fabricated on a diamond sample are magnetized in a vortex state in which the magnetization curls around a central core. The magnetization dynamics of this configuration are described by a discrete spectrum of confined magnon modes as well as a low-frequency gyrotropic mode in which the vortex core precesses about its equilibrium position. Despite the spin transition frequencies being far-detuned from the modes of the ferromagnet, we observe enhanced relaxation of the NV spin when driving the gyrotropic mode. Moreover, we map the spatial dependence of the interaction between the vortex and the spin by translating the vortex core within the disk with an applied magnetic field, resulting in steplike motion as the vortex is pinned and de-pinned. Strong spin relaxation is observed when the vortex core is within approximately 250 nm of the NV center defect. We attribute this effect to the higher frequencies in the spectrum of the magnetic fringe field arising from the soliton-like nature of the gyrotropic mode when driven with sufficiently large amplitude.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Challenges and transformative opportunities in superconductor vortex physics

In superconductors, the motion of vortices introduces unwanted dissipation that is disruptive to applications. Fortunately, material defects can immobilize vortices, acting as vortex pinning centers, which engenders dramatic improvements in superconductor material properties and device operation. This has motivated decades of research into developing methods of tailoring the disorder landscape in superconductors to increase the strength of vortex pinning. Yet, efficacious materials engineering still eludes us. The electromagnetic properties of real (disordered) superconducting materials cannot yet be reliably predicted, such that designing superconductors for applications remains a largely inefficient process of trial and error. This is ultimately due to large gaps in our knowledge of vortex dynamics: the field is challenged by the extremely complex interplay between vortex elasticity, vortex-vortex interactions, and material disorder. Here, we review obstacles and recent successes in understanding and controlling vortex dynamics in superconducting materials and devices. We further identify major open questions and discuss opportunities for transformative research in the field. This includes improving our understanding of vortex creep, determining and reaching the ceiling for the critical current, advanced microscopy to garner accurate structure-property relationships, frontiers in predictive simulations and the benefits of artificial intelligence, as well as controlling and exploiting vortices in quantum information applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Wake-up and fatigue mechanisms in ferroelectric Hf 0.5 Zr 0.5 O 2 films with symmetric RuO 2 electrodes

In this work, the mechanisms leading to wake-up and fatigue in ferroelectric hafnium zirconium oxide thin film devices with symmetric RuO 2 electrodes are investigated via polarization, relative permittivity, dielectric nonlinearity, pyroelectric coefficient, and microfocus X-ray diffraction (XRD) measurements. The devices are observed to wake-up for up to 10 3 bipolar pulsed field cycles, after which fatigue occurs with the polarization approaching zero following 10 8 cycles. Wake-up is accompanied by a decrease in both high-field permittivity and hysteresis loop pinching and an increase in pyroelectric coefficient, indicating that the wake-up process involves a combination of transformations from the tetragonal to the orthorhombic phase and domain depinning from defect redistribution. Fatigue is observed to coincide with an increase in irreversible domain wall motion and a decrease in pyroelectric coefficient. Finite pyroelectric coefficients are measured on fully fatigued devices, indicating that domain pinning is a strong contributor to fatigue and that fatigued devices contain domain structures that are unable to switch under the fields applied for measurement. Microfocus XRD patterns measured on each device reveal that the phase constitution is qualitatively unaffected by the field cycling and resultant polarization fatigue. This data indicates that the wake-up process has contributions from both phase transformations and domain depinning, whereas the fatigue process is driven primarily by domain pinning, and the near-zero measured switchable polarization is actually a poled device with immobile domains. These observations provide insight into the physical changes occurring during field cycling of HfO 2 -based ferroelectrics while examining a possible oxide electrode material for silicon CMOS device implementation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Spectrally filtered ps–ns emission dynamics of atmospheric-pressure nanosecond pulsed plasmas

The temporal dynamics of atmospheric-pressure nanosecond pulsed plasma discharges in a pin-to-pin electrode configuration are studied using streak-camera line imaging of the interelectrode gap with a time resolution as short as ~25 ps. Discharge emission initiates homogeneously throughout the interelectrode gap with no detectable streamer propagation and then temporally decays in two distinct phases. Plasma emission bands attributed to various electronic transitions are tracked for single discharges in air and N 2 . Spectral filtering of the excited molecular states reveals that the N 2 (C–B) and N 2 (B–A) emission bands evolve in distinct early and late phases, respectively, with a time separation of ~15–20 ns. Furthermore, significant differences in the temporal dynamics of plasma discharges in air and N2 are observed. High levels of excited-state atomic oxygen and NO appear after the initial decay of the N 2 (C) state and coincide primarily with the latter phases of plasma evolution in air environments. From temporal traces of discharge emission, the formation and relaxation timescales of the electronically excited states of N 2 are quantified in pure N2 and air environments with sub-nanosecond resolution. The streak-OES (optical emission spectroscopy) technique enables quantitative time-resolved studies of key chemical species for model validation in ultra-short-pulsed plasmas.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Segregation of Al and its effect on coercivity in Nd-Fe-B

Doping a small amount of Al can effectively enhance coercivity in Nd-Fe-B magnets. Here we investigated the partitioning behavior of Al and its effect on coercivity in Nd-Fe-B using first principles DFT (density functional theory) calculation and micromagnetic simulation. The calculated substitution energies of Fe by Al are negative at the crystallographic sites of 4c and 8j 2 while they are positive values at the other sites in Nd 2 Fe 14 B (2:14:1), implying a small solubility of Al in 2:14:1. Further, Al prefers to segregate at grain boundary (GB) and stabilize the Nd-Fe-Al phase with a Nd 6 Fe 13 Si-type tetragonal structure (6:13:1). The formation of the antiferromagnetic or weak ferrimagnetic 6:13:1-like phase depletes Fe and reduces the amount of ferromagnetic Nd–Fe type grain boundary phase (GBP), which weakens the inter-grain magnetic interaction. Micromagnetic simulations indicate that the 6:13:1-like GBP increases the pinning field of magnetic domain wall at GB and suppresses the nucleation of reversal magnetic domain on the grain surface of 2:14:1 during demagnetization process. The formation of Al-rich shell on 2:14:1 grain surface can further moderately increase the domain pinning field at GB and the nucleation field of 2:14:1 grain. Developing novel processing method to tailor Al segregation and promote formation of 6:13:1-like phase at GB can be a promising approach to improve coercivity in Nd-Fe-B magnet.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Design Studies for the Optimization of 238 Pu Production in NpO 2 Targets Irradiated at the High Flux Isotope Reactor

Efforts to reestablish a domestic 238 Pu production capability in support of National Aeronautics and Space Administration mission objectives are ongoing throughout the U.S. Department of Energy complex. The Plutonium-238 Supply Project (PSP) was initiated in response to a report published by the National Research Council in 2011 stating that “without a restart of 238 Pu production, it will be impossible for the United States, or any other country, to conduct certain important types of planetary missions after this decade.” The PSP is targeting a sustained, constant production rate of 1.5 kg/year of heat source PuO 2 for several years. Design and optimization studies of 237 Np-bearing targets are underway at Oak Ridge National Laboratory (ORNL). It is anticipated that targets will be irradiated in ORNL’s High Flux Isotope Reactor (HFIR) and in the Advanced Test Reactor (ATR) at Idaho National Laboratory. A variety of target materials, containments, arrangements, and irradiation histories have been analyzed, and the results indicate that a sufficient quantity of 238 Pu can be produced in HFIR and ATR to fulfill the PSP’s constant production rate target. This paper focuses on the design and optimization of new target configurations containing pellets that are (1) ~93% of the theoretical density of NpO 2 , (2) loaded into pins of cladding materials that can be handled as solid waste following postirradiation 238 Pu recovery operations, (3) irradiated in various vertical experiment facility (VXF) locations in the HFIR permanent beryllium reflector, and (4) rotated within and/or moved to another VXF location following each HFIR operational cycle to maximize 238Pu production and minimize peak heat generation rates.

07 ISOTOPE AND RADIATION SOURCES↗