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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Improving Primary Frequency Response in Networked Microgrid Operations using Multilayer Perceptron-Driven Reinforcement Learning

Individual microgrids can improve the reliability of power grids during extreme events, and networked microgrids can further improve efficiency through resource sharing and increase the resilience of critical end-use loads. However, networked microgrid operations are subject to large switching transients, which can cause dynamic instability and lead to system collapse. These transients are especially prevalent in microgrids with high penetrations of inverter-connected renewable energy resources, which do not provide the system inertia needed to mitigate the transients. Existing generator controls can be modified to invoke a drop in terminal voltage in response to a frequency deviation, thereby reducing load and improving frequency response. This paper investigates the use of a reinforcement-learning--based controller trained over several switching transient scenarios to modify generator controls during large frequency deviations. Compared to previously used proportional integral controllers, the proposed controller can improve primary frequency response while adapting to changes in system topologies and events.

Radhakrishnan, Nikitha↗
DOE OSTI2012

Ion assisted growth of B{sub 4}C diffusion barrier layers in Mo/Si multilayered structures

We investigated the thermal stability of e-beam deposited Mo/B{sub 4}C/Si/B{sub 4}C layered systems, with and without ion assistance during the growth of the B{sub 4}C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B{sub 4}C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B{sub 4}C layer.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Dark current in multilayer stabilized amorphous selenium based photoconductive x-ray detectors

We report on experimental results which show that the dark current in n-i-p structured, amorphous selenium films is independent of i-layer thickness in samples with consistently thick blocking layers. We have observed, however, a strong dependence on the n-layer thickness and positive contact metal chosen. These results indicate that the dominant source of the dark current is carrier injection from the contacts and any contribution from carriers thermally generated in the bulk of the photoconductive layer is negligible. This conclusion is supported by a description of the dark current transients at different applied fields by a model which assumes only carrier emission over a Schottky barrier. This model also predicts that while hole injection is initially dominant, some time after the application of the bias, electron injection may become the dominant source of dark current.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Geometrical parameters effects on local electric field enhancement of silver-dielectric-silver multilayer nanoshell

The local electric field enhancement at different points of silver-dielectric-silver nanoshell is investigated using quasi-static theory. Because of the symmetric and anti-symmetric coupling between surface plasmon of inner silver core and outer silver shell, the local electric field spectrum of silver-dielectric-silver has two distinct peaks at resonance wavelengths. The silver core size and middle dielectric thickness affect the local electric field enhancement at different points of silver-dielectric-silver nanoshell. Increasing the silver core radius always leads to blue shift of shorter resonance wavelength and red shift of longer resonance wavelength. We observed two distinct local electric field peaks, which are corresponded to the symmetric and anti-symmetric coupling between inner and outer surface plasmons. In a system with thick silver shell, local electric field enhancement is greater than a system with thin silver shell. However, the local electric field variations as a function of silver core radius in both systems are different at different points of nanoshell. The effects of the dielectric thickness variations on local electric field are different from those from silver core size variations. As the dielectric thickness is about 3 nm, the highest local electric field enhancement occurs at the surface of the inner silver core, where the symmetric and anti-symmetric modes are mixed together.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

The multi-scattering model for calculations of positron spatial distribution in the multilayer stacks, useful for conventional positron measurements

The spatial distribution of positrons emitted from radioactive isotopes into stacks or layered samples is a subject of the presented report. It was found that Monte Carlo (MC) simulations using GEANT4 code are not able to describe correctly the experimental data of the positron fractions in stacks. The mathematical model was proposed for calculations of the implantation profile or positron fractions in separated layers or foils being components of a stack. The model takes into account only two processes, i.e., the positron absorption and backscattering at interfaces. The mathematical formulas were applied in the computer program called LYS-1 (layers profile analysis). The theoretical predictions of the model were in the good agreement with the results of the MC simulations for the semi infinite sample. The experimental verifications of the model were performed on the symmetrical and non-symmetrical stacks of different foils. The good agreement between the experimental and calculated fractions of positrons in components of a stack was achieved. Also the experimental implantation profile obtained using the depth scanning of positron implantation technique is very well described by the theoretical profile obtained within the proposed model. The LYS-1 program allows us also to calculate the fraction of positrons which annihilate in the source, which can be useful in the positron spectroscopy.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2013

Even-odd oscillation and valley polarization of transmission between multilayer graphenes

Electron transmission through a boundary between multi-layer graphenes with Bernal stacking consisting of different number of layers is studied. A valley polarization in transmission probability appears as in monolayer and bilayer systems, exhibits considerable oscillation depending of even or odd layer numbers, and its amplitude gradually decreases with the layer number. The total transmission shows oscillation with much smaller amplitude.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Numerical models for the prediction of failure for multilayer fusion Al-alloy sheets

Initiation and propagation of cracks in monolithic and multi-layer aluminum alloys, called “Fusion”, is investigated. 2D plane strain finite element simulations are performed to model deformation due to bending and to predict failure. For this purpose, fracture strains are measured based on microscopic pictures of Nakajima specimens. In addition to, micro-structure of materials is taken into account by introducing a random grain distribution over the sheet thickness as well as a random distribution of the measured yield curve. It is shown that the performed experiments and the introduced FE-Model are appropriate methods to highlight the advantages of the Fusion material, especially for bending processes.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Charge-transfer dynamics in multilayered PbS and PbSe quantum dot architectures

We demonstrate control of the charge transfer process in PbS and PbSe quantum dot assemblies. We first demonstrate efficient charge transfer from donor quantum dots to acceptor quantum dots in a multi-layer PbSe cascade structure. Then, we assemble type-I and type-II heterostructures using both PbS and PbSe quantum dots via careful control of the band alignment. In type-I structures, photo-generated carriers are transferred and localized in the smaller bandgap (acceptor) quantum dots, resulting in a significant luminescence enhancement. In contrast, a significant luminescence quenching and shorter emission lifetime confirms an efficient separation of photo-generated carriers in the type-II architecture.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Single-crystalline monolayer and multilayer graphene nano switches

Growth of monolayer, bi-layer, and tri-layer single-crystalline graphene (SCG) using chemical vapor deposition method is reported. SCG's mechanical properties and single-crystalline nature were characterized and verified by atomic force microscope and Raman spectroscopy. Electro-mechanical switches based on mono- and bi-layer SCG were fabricated, and the superb properties of SCG enable the switches to operate at pull-in voltage as low as 1 V, and high switching speed about 100 ns. These devices exhibit lifetime without a breakdown of over 5000 cycles, far more durable than any other graphene nanoelectromechanical system switches reported.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Treating the effect of interface reflections on superdiffusive spin transport in multilayer samples (invited)

Femtosecond laser-induced magnetization dynamics has recently been related to superdiffusive spin transport. With the aim to accurately compute spin superdiffusion in the complex geometries of layered heterostructures and free standing layers, we develop here a dedicated numerical scheme. We introduce a discretization technique to solve the superdiffusive equation numerically on a time and space grid. The discretization scheme facilitates an explicit treatment of the total reflection at the vacuum-material surfaces as well as of partial reflections at the interfaces between two different materials. The advantages of the numerical technique are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

The work presents a comparative study on the effects of In incorporation in the channel layer of AlGaN/GaN type-II heterostructures grown on c-plane sapphire by Plasma Assisted Molecular Beam Epitaxy. The structural characterizations of these samples were performed by High-Resolution X-Ray Diffraction (HRXRD), X-ray Reflectivity (XRR), Field Emission Scanning Electron Microscopy, and High Resolution Transmission Electron Microscopy. The two-dimensional electron gas in the AlGaN/GaN and AlGaN/InGaN interface was analyzed by electrochemical capacitance voltage and compared with theoretical results based on self-consistent solution of Schördinger–Poisson equations. The carrier profile shows enhanced confinement in InGaN channel (1.4393 × 10{sup 13} cm{sup −2} compared to 1.096 × 10{sup 13} cm{sup −2} in GaN). On the basis of HRXRD measurements, the stress-strain of the layers was examined. The c- and a-lattice parameters of the epilayers as well as in-plane and out-of plane strains were determined from the ω-2θ for symmetric scan and ω-Xθ (X represents the coupling coefficient) for asymmetric scan. Strain, tilt, and correlation lengths were calculated from Williamson–Hall plots, whereas stress was examined from modified plot of the same data assuming Uniform Stress Deformation Model. Moreover, the twist angle was measured from skew symmetric scan of (102), (103), and (105) plane along with (002) symmetric plane. The composition and strain/relaxation state of the epilayers were observed in detail by reciprocal space mapping (RSM). The symmetric (002) triple axis RSM and asymmetric (105 and 114) double axis RSM of grazing incidence and exit geometry were carried out on each sample. The defect density was measured from HRXRD curves of skew symmetric (002) and (102) reflection plane. The Al and In mole fraction and strain states of the layers were calculated by fitting the experimental curves with computer simulations and compared with theoretical findings based on elastic theory. The thicknesses of the layers and roughness of the interfaces were measured from simulation of the nominal structure by fitting with XRR experimental curves. The HRXRD measured thicknesses of the layers were further confirmed by cross sectional electron micrographs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings

Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Fabrication of optical multilayer for two-color phase plate in super-resolution microscope

In super-resolution microscopy based on fluorescence depletion, the two-color phase plate (TPP) is an indispensable optical element, which can independently control the phase shifts for two beams of different color, i.e., the pump and erase beams. By controlling a phase shift of the erase beam through the TPP, the erase beam can be modulated into a doughnut shape, while the pump beam maintains the initial Gaussian shape. To obtain a reliable optical multiplayer (ML) for the TPP, we designed a ML with only two optical layers by performing numerical optimization. The measured phase shifts generated by the fabricated ML using interferometry correspond to the design values. The beam profiles in the focal plane are also consistent with theoretical results. Although the fabricated ML consists of only two optical layers, the ML can provide a suitable phase modulation function for the TPP in a practical super-resolution microscope.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Substitution behavior of x(Na{sub 0.5}K{sub 0.5})NbO{sub 3}-(1 − x)BaTiO{sub 3} ceramics for multilayer ceramic capacitors by a near edge x-ray absorption fine structure analysis

The doping effect of (Na{sub 0.5}K{sub 0.5})NbO{sub 3} (NKN) as alternatives for rare-earth elements on the electrical properties of BaTiO{sub 3} has been investigated, in terms of their substitution behavior. The dielectric constant of a specimen with x = 0.05 was about 79% higher than that of pure BaTiO{sub 3}, and the temperature coefficient of capacitance was satisfied by the X7R specification. The specimen with x = 0.05 showed the lowest tetragonality among the four compositions and had a fine grain size of <2 μm. Although the addition of NKN decreased the specimen's tetragonality, the electrical properties were enhanced by the formation of defect dipoles and conduction electrons, which resulted from an acceptor and donor substitution behavior. Through O K-edge near edge x-ray absorption fine structure spectroscopy, the practical substitution behavior was defined by the change in Ti 3d orbital states. The energy separation of the Ti 3d orbitals was more apparent with the specimen of x = 0.05, which is related to the donor level from the donor substitution of Nb{sup 5+} ion for Ti-sites. Therefore, the simultaneous substitution of Na{sup +}/K{sup +} and Nb{sup 5+} ions into BaTiO{sub 3} can improve dielectric properties, based on the charge-transfer process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Optical properties of large-area ultrathin MoS{sub 2} films: Evolution from a single layer to multilayers

We investigated the optical properties of ultrathin MoS{sub 2} films (number of layers: N = 1, 2, 4, and 12) using Raman spectroscopy, photoluminescence (PL) spectroscopy, and spectroscopic ellipsometry. We estimated the layer thicknesses based on Raman spectra. We characterized the microstructural properties of a single-layer MoS{sub 2} film using atomic force microscopy. We measured the lowest-energy A and B excitons using PL spectroscopy. We measured the ellipsometric angles (Ψ and Δ) of MoS{sub 2} thin films using spectroscopic ellipsometry, and obtained the dielectric functions as the films' thickness changed from a single layer to multi-layers. We determined the films' optical gap energies from the absorption coefficients. Applying the standard critical point model to the second derivative of the dielectric function (d{sup 2}ε(E)/dE{sup 2}), we determined several critical point energies. The d{sup 2}ε(E)/dE{sup 2} spectra showed doublet peaks around 3 eV corresponding to the C and D transitions, as well as doublet peaks around 2 eV corresponding to the A and B transitions. These doublet structures at 3 eV are attributed to the transitions in the Brillouin zone between the Γ and K points.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗