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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Topological insulator-based high efficiency switching of magnetic unit, method and applications

A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Gd substitution on the structural, magnetic, and magnetocaloric properties of HoCrO 3

Rare-earth chromites are a novel type of magnetoelectric multiferroics. Here, a Ho 0.33 Gd 0.67 CrO 3 powder sample was synthesized via a citrate route, and the structural properties were characterized by X-ray diffraction, scanning electron microscopy, and the Raman technique. The UV-Visible optical absorbance spectra were also measured in the wavelength range of 200–800 nm. The valence state of Cr was found to be purely 3+ according to the X-ray photoelectron spectroscopy. The temperature-dependent dielectric constant and loss tangent data measured between the frequencies of 1 kHz and 1 MHz show no anomalies around the magnetic transition temperature of the material. The dc magnetization measurements show that the ordering temperature of Cr 3+ ( T N C r ) is 155 K for Ho 0.33 Gd 0.67 CrO 3 , which is larger than 140 K for HoCrO 3 . The positive slope of the Arrott plots from 0 T to 7 T reveals that the antiferromagnetic-paramagnetic phase transition is second-order in nature. At a field of 7 T, the Ho 0.33 Gd 0.67 CrO 3 sample showed a giant magnetocaloric entropy change, -ΔS, of ~23.3 J/kg K at 5 K, and a refrigeration capacity of ~481.2 J/kg, which are much higher than those of pure bulk HoCrO 3 . This renders this material prospective for magnetic refrigeration in the low temperature (<30 K) range.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Anisotropically large anomalous and topological Hall effect in a kagome magnet

Recently, kagome materials have become an engrossing platform to study the interplay among symmetry, magnetism, topology, and electron correlation. The latest works in RMn6Sn6 (R = rare earth metal) have illustrated that this family could be intriguing to investigate various physical phenomena due to large spin-orbit coupling and strong magnetic ordering. However, combined transport and spectroscopic studies in RMn6Sn6 materials are still limited. Here, we report magnetic, magneto-transport, and angle-resolved photoemission spectroscopy measurements of a kagome magnet ErMn 6 Sn 6 that undergoes antiferromagnetic (T N = 345 K) to ferrimagnetic (T c = 68 K) phase transitions. We observe a large anomalous and topological Hall effect serving as transport signatures of the nontrivial Berry curvature. Our spectroscopic results complemented by theoretical calculations show the multi-orbital kagome fermiology. This work provides new insight into the tunability and interplay of topology and magnetism in a kagome magnet.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Spin transport and spin torque in antiferromagnetic devices

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Magnetic and electrical control of engineered materials

Methods, systems, and devices are disclosed for controlling the magnetic and electrical properties of materials. In one aspect, a multi-layer structure includes a first layer comprising a ferromagnetic or ferrimagnetic material, and a second layer positioned within the multi-layer structure such that a first surface of the first layer is in direct physical contact with a second surface of the second layer. The second layer includes a material that undergoes structural phase transitions and metal-insulator transitions upon experiencing a change in temperature. One or both of the first and second layers are structured to allow a structural phase change associated with the second layer cause a change magnetic properties of the first layer.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Seeing is believing: visualization of antiferromagnetic domains

Abstract Understanding and utilizing novel antiferromagnetic (AFM) materials has been recently one of the central issues in condensed matter physics, as well as in materials science and engineering. The relevant contemporary topics include multiferroicity, topological magnetism and AFM spintronics. The ability to image magnetic domains in AFM materials is of key importance for the success of these exciting fields. While imaging techniques of magnetic domains on the surfaces of ferro-(ferri)magnetic materials with, for example, magneto-optical Kerr microscopy and magnetic force microscopy have been available for a number of decades, AFM domain imaging is a relatively new development. We review various experimental techniques utilizing scanning, optical, and synchrotron X-ray probes to visualize AFM domains and domain walls, and to unveil their physical properties. We also discuss the existing challenges and opportunities in these techniques, especially with further increase of spatial and temporal resolution.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Measurements of Magnetic Field Penetration in Superconducting Materials for SRF Cavities

Superconducting radiofrequency (SRF) cavities used in particle accelerators operate in the Meissner state. To achieve high accelerating gradients, the cavity material should stay in the Meissner state under high RF magnetic field without penetration of vortices through the cavity wall. The field onset of flux penetration into a superconductor is an important parameter of merit of alternative superconducting materials other than Nb which can enhance the performance of SRF cavities. There is a need for a simple and efficient technique to measure the onset of field penetration into a superconductor directly. We have developed a Hall probe experimental setup for the measurement of the flux penetration field through a superconducting sample placed under a small superconducting solenoid magnet which can generate magnetic fields up to 500 mT. The system has been calibrated and used to measure different bulk and thin film superconducting materials. This system can also be used to study SIS multilayer coatings that have been proposed to enhance the vortex penetration field in Nb cavities.

Senevirathne, I. H.↗
DOE OSTI2020

Observation of Quantum Anomalous Hall Effect and Exchange Interaction in Topological Insulator/Antiferromagnet Heterostructure

Integration of a quantum anomalous Hall insulator with a magnetically ordered material provides an additional degree of freedom through which the resulting exotic quantum states can be controlled. Here, an experimental observation is reported of the quantum anomalous Hall e?ect in a magnet-ically-doped topological insulator grown on the antiferromagnetic insulator Cr?O?. The exchange coupling between the two materials is investigated using ?eld-cooling-dependent magnetometry and polarized neutron re?ec-tometry. Both techniques reveal strong interfacial interaction between the antiferromagnetic order of the Cr?O? and the magnetic topological insulator, manifested as an exchange bias when the sample is ?eld-cooled under an out-of-plane magnetic ?eld, and an exchange spring-like magnetic depth pro?le when the system is magnetized within the ?lm plane. These results identify antiferromagnetic insulators as suitable candidates for the manipula-tion of magnetic and topological order in topological insulator ?lms.

Pan, Lei↗
NASA NTRS2012

Force sensor using changes in magnetic flux

A force sensor includes a magnetostrictive material and a magnetic field generator positioned in proximity thereto. A magnetic field is induced in and surrounding the magnetostrictive material such that lines of magnetic flux pass through the magnetostrictive material. A sensor positioned in the vicinity of the magnetostrictive material measures changes in one of flux angle and flux density when the magnetostrictive material experiences an applied force that is aligned with the lines of magnetic flux.

Pickens, Herman L.↗
NASA NTRS2004

Advanced Electrical Materials and Components Being Developed

All aerospace systems require power management and distribution (PMAD) between the energy and power source and the loads. The PMAD subsystem can be broadly described as the conditioning and control of unregulated power from the energy source and its transmission to a power bus for distribution to the intended loads. All power and control circuits for PMAD require electrical components for switching, energy storage, voltage-to-current transformation, filtering, regulation, protection, and isolation. Advanced electrical materials and component development technology is a key technology to increasing the power density, efficiency, reliability, and operating temperature of the PMAD. The primary means to develop advanced electrical components is to develop new and/or significantly improved electronic materials for capacitors, magnetic components, and semiconductor switches and diodes. The next important step is to develop the processing techniques to fabricate electrical and electronic components that exceed the specifications of presently available state-of-the-art components. The NASA Glenn Research Center's advanced electrical materials and component development technology task is focused on the following three areas: 1) New and/or improved dielectric materials for the development of power capacitors with increased capacitance volumetric efficiency, energy density, and operating temperature; 2) New and/or improved high-frequency, high-temperature soft magnetic materials for the development of transformers and inductors with increased power density, energy density, electrical efficiency, and operating temperature; 3) Packaged high-temperature, high-power density, high-voltage, and low-loss SiC diodes and switches.

Schwarze, Gene E.↗
DOE OSTI2013

Magnetic properties of nanocrystalline ε-Fe{sub 3}N and Co{sub 4}N phases synthesized by newer precursor route

Graphical abstract: Nanocrystalline ε-Fe{sub 3}N and Co{sub 4}N nitride phases are synthesized first time by newer chemical routes. The ε-Fe{sub 3}N phase crystallizes in hexagonal structure with unit cell parameters, a = 4.76 Å and c = 4.41 Å. The Co{sub 4}N phase crystallizes in face centred cubic (fcc) structure with unit cell parameters, a = 3.55 Å. The estimated crystallite size for ε-Fe{sub 3}N and Co{sub 4}N phases are 29 nm and 22 nm, respectively. The values of saturation magnetization for ε-Fe{sub 3}N and Co{sub 4}N phases are found to be 28.1 emu/g and 123.6 emu/g respectively. The reduction of magnetic moments in ultrafine materials compared to bulk materials has been explained by fine particle size and surface effects. We have synthesized the high moment ε-Fe{sub 3}N and Co{sub 4}N nitride with reduced coercivity which may find applications as soft magnetic materials. - Highlights: • Nanocrystalline ε-Fe{sub 3}N and Co{sub 4}N nitride phases are synthesized. • The ε-Fe{sub 3}N and Co{sub 4}N crystallizes in hexagonal and fcc structure respectively. • The observed magnetic parameters indicate soft magnetic properties. • The magnetic properties have been explained on the basis of fine particle magnetism. - Abstract: Nanocrystalline ε-Fe{sub 3}N and Co{sub 4}N nitride phases are synthesized first time by using tris(1,2-diaminoethane)iron(II) chloride and tris(1,2-diaminoethane)cobalt(III) chloride precursors, respectively. To prepare ε-Fe{sub 3}N and Co{sub 4}N nitride phases, the synthesized precursors were mixed with urea in 1:12 ratio and heat treated at various temperatures in the range of 450–900 °C under the ultrapure nitrogen gas atmosphere. The precursors are confirmed by FT-IR study. The ε-Fe{sub 3}N phase crystallizes in hexagonal structure with unit cell parameters, a = 4.76 Å and c = 4.41 Å. The Co{sub 4}N phase crystallizes in face centred cubic (fcc) structure with unit cell parameters, a = 3.55 Å. The estimated crystallite size for ε-Fe{sub 3}N and Co{sub 4}N phases are 29 nm and 22 nm, respectively. The scanning electron microscopy (SEM) studies confirm the nanocrystalline nature of the materials. The values of saturation magnetization for ε-Fe{sub 3}N and Co{sub 4}N phases are found to be 28.1 emu/g and 123.6 emu/g, respectively. The reduction of magnetic moments in ultrafine materials compared to bulk materials have been explained by spin pairing effect, lattice expansion, superparamagnetic behaviour and canted spin structures at the surface of the particles.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Exchange Coupling in MnAlC/α-Fe Nanocomposite Magnets

Nanostructured composite materials consisting of exchange-coupled hard and soft magnetic phases are proposed as alternative for the development of high-energy product permanent magnets. In this work, we have examined the effects of soft magnetic α-Fe addition on the structure and magnetic properties of powders composed of hard magnetic Mn{sub 54.3}Al{sub 44}C{sub 1.7} compound. The optimum melt-spun ribbon precursor (with τ-phase structure, with magnetization of 88 emu/g and coercive field of 1.6 kOe) was obtained after annealing the ribbons at 500 {sup ∘}C for 20 min. After the combination between the soft and the optimized hard phase, the intensity of τ-phase peaks measured by X-ray diffraction decreases. These changes can also be seen in the magnetic properties. The coercivity (∼ 500 Oe) tends to decrease with the annealing temperature, while the magnetization tends to increase up to 141 emu/g. Evidence of good exchange coupling between particles of Mn{sub 54.3}Al{sub 44}C{sub 1.7} and α-Fe, in the produced composite, was proved by the hysteresis loop and its corresponding Thamm-Hesse analysis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Spin Hall effects in metallic antiferromagnets – perspectives for future spinorbitronics

We investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique. The large spin Hall effect exists in PtMn, a prototypical CuAu-I-type metallic antiferromagnet. By applying epitaxial growth, we previously reported an appreciable difference in spin-orbit torques for c- and a-axis orientated samples, implying anisotropic effects in magnetically ordered materials. In this work we demonstrate through bipolar-magnetic-field experiments a small but noticeable asymmetric behavior in the spin-transfer-torque that appears as a hysteresis effect. We also suggest that metallic antiferromagnets may be good candidates for the investigation of various unidirectional effects related to novel spin-orbitronics phenomena.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Realization of two-sublattice exchange physics in the triangular lattice compound Ba 3 Er(BO 3 ) 3

Geometric frustration commonly occurs in materials where magnetic rare-earth ions are arranged on a two-dimensional triangular lattice. These compounds have been gaining significant attention lately, as they hold the promise of revealing unique quantum states of matter. However, little attention has been devoted to cases where spin-$\frac{1}{2}$ rare-earth ions are substituted with ions exhibiting higher spin multiplicities. Here, we successfully synthesize high-quality single crystal samples of Ba 3 Er(BO 3 ) 3 , which is part of the family of triangular lattice compounds. In our experiments, conducted at extremely low temperatures (around 100 millikelvin), we observe two sublattice exchange interactions in Ba 3 Er(BO 3 ) 3 , resulting in the hexagonal lattice spins exhibiting a mixture of ferromagnetic and antiferromagnetic tendencies. Our theoretical analysis suggest that this behavior may be attributed to the distinct positions of magnetic ions within the crystal lattice. However, the presence of quantum effects adds an extra layer of complexity to our findings, calling for further exploration.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Engineering helimagnetism in MnSi thin films

Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Paramagnetic relaxation in anisotropic materials in zero and weak constant fields

Paramagnetic relaxation in strongly anisotropic materials is analytically investigated in zero and weak constant magnetic fields. The objectives of the microscopic analytical investigation are (i) the weak-field electron paramagnetic resonance (EPR) linewidth and (ii) the electron spin relaxation rates given by a calorimetric Gorter type experiment in the zero constant field at the arbitrary low-frequency field directions, respectively, to the sample crystallographic axes. The EPR linewidth is calculated under the suggestion of its spin-phonon nature at the one-phonon mechanism of the spin-lattice relaxation in the case of the strong isotropic exchange interaction for the arbitrary direction Z of the constant magnetic field. The EPR linewidth is presented as the half sum of the zero-field relaxation rates, measured by the Gorter experiment with the low-frequency field oriented along the X, Y axes. With the help of the macroscopic consideration, it is shown that the zero-field relaxation rates describe the relaxation of the X and Y magnetization components in a zero or weak constant magnetic field. The relaxation rates of the magnetizations created along a,b,c crystallographic axes by a low-frequency field in a Gorter type experiment follow the obtained expressions in the particular cases and are in the experimentally confirmed relations with the EPR linewidth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Tunable, room-temperature multiferroic Fe-BaTiO 3 vertically aligned nanocomposites with perpendicular magnetic anisotropy

Room-temperature ferromagnetic materials with perpendicular magnetic anisotropy are widely sought after for spintronics, magnetic data storage devices, and stochastic computing. To address this need, a new Fe-BaTiO 3 vertically aligned nanocomposite (VAN) has been fabricated—combining both the strong room-temperature ferromagnetic properties of Fe nanopillars and the strong room-temperature ferroelectric properties of the BaTiO 3 matrix. Furthermore, the Fe-BaTiO 3 VAN allows for highly anisotropic magnetic properties with tunable magnetization and coercivity. Additionally, to demonstrate the multiferroic properties of the Fe-BaTiO 3 system, the new metal-oxide hybrid material system has been incorporated in a multilayer stack. Overall, this new multiferroic VAN system possesses great potential in magnetic anisotropy and property tuning and demonstrates a new material family of oxide-metal hybrid systems for room-temperature multiferroic material designs.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Unambiguous separation of the inverse spin Hall and anomalous Nernst effects within a ferromagnetic metal using the spin Seebeck effect

In this paper, the longitudinal spin Seebeck effect is measured on the ferromagnetic insulator Fe 3 O 4 with the ferromagnetic metal Co 0.2 Fe 0.6 B 0.2 (CoFeB) as the spin detector. By using a non-magnetic spacer material between the two materials (Ti), it is possible to decouple the two ferromagnetic materials and directly observe pure spin flow from Fe 3 O 4 into CoFeB. It is shown that in a single ferromagnetic metal, the inverse spin Hall effect (ISHE) and anomalous Nernst effect (ANE) can occur simultaneously with opposite polarity. Using this and the large difference in the coercive fields between the two magnets, it is possible to unambiguously separate the contributions of the spin Seebeck effect from the ANE and observe the degree to which each effect contributes to the total response. Finally, these experiments show conclusively that the ISHE and ANE in CoFeB are separate phenomena with different origins and can coexist in the same material with opposite response to a thermal gradient.

36 MATERIALS SCIENCE↗