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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Petascale Simulations of the Morphology and the Molecular Interface of Bulk Heterojunctions

Understanding how additives interact and segregate within bulk heterojunction (BHJ) thin films is critical for exercising control over structure at multiple length scales and delivering improvements in photovoltaic performance. The morphological evolution of poly(3-hexylthiophene) (P3HT) and phenyl-C 61 -butyric acid methyl ester (PCBM) blends that are commensurate with the size of a BHJ thin film is examined using petascale coarse-grained molecular dynamics simulations. When comparing 2 component and 3 component systems containing short P3HT chains as additives undergoing thermal annealing we demonstrate that the short chains alter the morphol- ogy in apparently useful ways: They efficiently migrate to the P3HT/PCBM interface, increasing the P3HT domain size and interfacial area. Simulation results agree with depth profiles determined from neutron reflectometry measurements that reveal PCBM enrichment near substrate and air interfaces, but a decrease in that PCBM enrich- ment when a small amount of short P3HT chains are integrated into the BHJ blend. Atomistic simulations of the P3HT/PCBM blend interfaces show a non-monotonic dependence of the interfacial thickness as a function of number of repeat units in the oligomeric P3HT additive, and the thiophene rings orient parallel to the interfacial plane as they approach the PCBM domain. Using the nanoscale geometries of the P3HT oligomers, LUMO and HOMO energy levels calculated by density functional theory are found to be invariant across the donor/acceptor interface. Finally, these connections between additives, processing, and morphology at all length scales are generally useful for efforts to improve device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays

Understanding the atomically precise arrangement of atoms at epitaxial interfaces is important for emerging technologies such as quantum materials that have function and performance dictated by bonds and defects that are energetically active on the micro-electronvolt scale. A combination of atomistic modeling and dislocation theory analysis describes both primary and secondary dislocation networks at the metamorphic Al/Si (111) interface, which is experimentally validated by atomic resolution scanning transmission electron microscopy. The electron microscopy images show primary misfit dislocations for the majority of the strain relief and evidence of a secondary structure allowing for complete relaxation of the Al–Si misfit strain. Finally, this study demonstrates the equilibrium interface that represents the lowest energy structure of a highly mismatched and semicoherent single-crystal interface with complete strain relief in an atomically abrupt structure.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Understanding the Role of Overpotentials in Lithium Ion Conversion Reactions: Visualizing the Interface

Oxide conversion reactions are known to have substantially higher specific capacities than intercalation materials used in Li-ion batteries, but universally suffer from large overpotentials associated with the formation of interfaces between the resulting nanoscale metal and Li 2 O products. Here we use the interfacial sensitivity of operando X-ray reflectivity to visualize the structural evolution of ultrathin NiO electrodes and their interfaces during conversion. We observe two additional reactions prior to the well-known bulk, three-dimensional conversion occurring at 0.6 V: an accumulation of lithium at the buried metal/oxide interface (at 2.2 V) followed by interfacial lithiation of the buried NiO/Ni interface at the theoretical potential for conversion (at 1.9 V). To understand the mechanisms for bulk and interfacial lithiation, we calculate interfacial energies using density functional theory to build a potential-dependent nucleation model for conversion. These calculations show that the additional space charge layer of lithium is a crucial component for reducing energy barriers for conversion in NiO.

25 ENERGY STORAGE↗
DOE OSTI2024

Dynamic Bubbling Balanced Proactive CO 2 Capture and Reduction on a Triple-Phase Interface Nanoporous Electrocatalyst

The formation and preservation of the active phase of the catalysts at the triple-phase interface during CO 2 capture and reduction is essential for improving the conversion efficiency of CO 2 electroreduction toward value-added chemicals and fuels under operational conditions. Designing such ideal catalysts that can mitigate parasitic hydrogen generation and prevent active phase degradation during the CO 2 reduction reaction (CO 2 RR), however, remains a significant challenge. Herein, we developed an interfacial engineering strategy to build a new SnO x catalyst by invoking multiscale approaches. This catalyst features a hierarchically nanoporous structure coated with an organic F-monolayer that modifies the triple-phase interface in aqueous electrolytes, substantially reducing competing hydrogen generation (less than 5%) and enhancing CO 2 RR selectivity (~90%). This rationally designed triple-phase interface overcomes the issue of limited CO 2 solubility in aqueous electrolytes via proactive CO 2 capture and reduction. Concurrently, we utilized pulsed square-wave potentials to dynamically recover the active phase for the CO 2 RR to regulate the production of C1 products such as formate and carbon monoxide (CO). This protocol ensures profoundly enhanced CO 2 RR selectivity (~90%) compared with constant potential (~70%) applied at -0.8 V (V vs RHE). We further achieved a mechanistic understanding of the CO 2 capture and reduction processes under pulsed square-wave potentials via in situ Raman spectroscopy, thereby observing the potential-dependent intensity of Raman vibrational modes of the active phase and CO 2 RR intermediates. Finally, this work will inspire material design strategies by leveraging triple-phase interface engineering for emerging electrochemical processes, as technology moves toward electrification and decarbonization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Constructing hierarchical interfaces: TiO 2 -supported PtFe-FeO x nanowires for room temperature CO oxidation

This is a report of a facile approach to constructing catalytic active hierarchical interfaces in one-dimensional (1D) nanostructure, exemplified by the synthesis of TiO 2 -supported PtFe–FeO x nanowires (NWs). The hierarchical interface, constituting atomic level interactions between PtFe and FeO x within each NW and the interactions between NWs and support (TiO 2 ), enables CO oxidation with 100% conversion at room temperature. We identify the role of the two interfaces by probing the CO oxidation reaction with isotopic labeling experiments. Both the oxygen atoms (Os) in FeO x and TiO 2 participate in the initial CO oxidation, facilitating the reaction through a redox pathway. Moreover, the intact 1D structure leads to the high stability of the catalyst. After 30 h in the reaction stream, the PtFe–FeO x /TiO2 catalyst exhibits no activity decay. These results provide a general approach and new insights into the construction of hierarchical interfaces for advanced catalysis.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Consistency in the Sum Frequency Generation Intensity and Phase Vibrational Spectra of the Air/Neat Water Interface

Tremendous progresses have been made in quantitative understanding and interpretation of the hydrogen bonding and ordering structure at the air/water interface since the first sum-frequency generation vibrational spectroscopy (SFG-VS) measurement on the neat air/water interface by Q. Du et al. in 1993 (PRL, 70, 2312-2316, 1993.). However, there are still disagreements and controversies on the consistency between the different experiment measurements and the theoretical computational results. One critical problem lies in the inconsistency between the SFG-VS intensity measurements and the recently developed SFG-VS phase spectra measurements of the neat air/water interface, which has inspired various theoretical efforts trying to understand them. In this report, the reliability of the SFG-VS intensity spectra of the neat air/water interface is to be quantitatively examined, and the sources of possible inaccuracies in the SFG-VS phase spectral measurement is to be discussed based on the non-resonant SHG phase measurement results. The conclusion is that the SFG-VS intensity spectra data from different laboratories are now quantitatively converging and in agreement with each other, and the possible inaccuracies and inconsistencies in the SFG-VS phase spectra measurements need to be carefully examined against the properly corrected phase standard.

08 HYDROGEN↗
DOE OSTI2025

Impact of CuInP 2 S 6 –metal interfaces on the stabilization of polar phases and polarization switching

The multifunctionality of two-dimensional ferroelectric CuInP 2 S 6 (CIPS) arises from the existence of multiple polar phases combined with a high ionic conductivity that facilitates polarization switching in unusual ways. The van der Waals (vdW) layered structure provides ultrathin flakes and ideal interfaces to integrate with other materials for microelectronics and neuromorphic elements. However, device integration necessitates metal contacts to read, write, or transmit signals. In this work, we find that different types of metal–CIPS interfaces strongly impact the stabilization of specific polar phases and the field-induced transitions between the polarization states. Cu electrodes initially suppress the piezoresponse, whereas, at CIPS–Ag interfaces, the electromechanical signal is increased. Under electric fields, the Cu electrodes, Ag electrodes and surrounding CIPS surfaces can show distinct switching behavior as different phases and polarization orientations are stabilized. These findings highlight that metal–CIPS interfaces provide the opportunity to optimize functional material properties.

Ferroelectrics and multiferroics↗
DOE OSTI2014

Long-range electronic reconstruction to a d xz,yz -dominated Fermi surface below the LaAlO 3 /SrTiO 3 interface

Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial “depth” - remains unclear. Examining LaAlO 3 /SrTiO 3 heterostructures at previously unexplored carrier densities $n_{2D}$ ≥ 6.9 × 10 14 cm –2 , we observe a Shubnikov-de Haas effect for small in-plane fields, characteristic of an anisotropic 3D Fermi surface with preferential d xz,yz orbital occupancy extending over at least 100 nm perpendicular to the interface. Quantum oscillations from the 3D Fermi surface of bulk doped SrTiO 3 emerge simultaneously at higher $n_{2D}$. We distinguish three areas in doped perovskite heterostructures: narrow (<20 nm) 2D interfaces housing superconductivity and/or other emergent phases, electronically isotropic regions far (>120 nm) from the interface and new intermediate zones where interfacial proximity renormalises the electronic structure relative to the bulk.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Induced Ferromagnetism at BiFeO 3 /YBa 2 Cu 3 O 7 Interfaces

We report that transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new functionalities can arise, which are absent in individual components. Here, we report results from first-principles calculations on the magnetism at the BiFeO 3 /YBa 2 Cu 3 O 7 interfaces. By comparing the total energy for various magnetic spin configurations inside BiFeO 3 , we are able to show that a metallic ferromagnetism is induced near the interface. We further develop an interface exchange-coupling model and place the extracted exchange coupling interaction strengths, from the first-principles calculations, into a resultant generic phase diagram. Our conclusion of interfacial ferromagnetism is confirmed by the presence of a hysteresis loop in field-dependent magnetization data. Lastly, the emergence of interfacial ferromagnetism should have implications to electronic and transport properties.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Electrical And Positron Study Of The Interface Of Organic Semiconductor Heterojunction

Single layer of CoPc, F{sub 16}CuPc and heterostructure of CoPc/F{sub 16}CuPc were prepared by thermal evaporation system. Charge transport measurement across the interface shows a two order higher free carrier density than that of the single layer device. This confirms a charge accumulation layer at the interface which may arise due to charge transfer from CoPc layer to F{sub 16}CuPc. Slow positron study also shows a sharp S-parameter profile at the interface which is a convoluted effect of defects arising due to the growth behavior of different type of organic molecules and the intrinsic electric field due to interfacial dipole at the interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Analytical electron microscopy investigation of elemental composition and bonding structure at the Sb-doped Ni-fully-silicide/SiO{sub 2} interface

It is very important to control the elemental composition and bonding structure at the gate electrode/gate dielectrics interface in metal-oxide-semiconductor transistor devices because this determines the threshold voltage of the gate electrode. In this study, we investigated the structure at the interface between the antimony (Sb)-doped nickel-fully-silicide gate electrode and SiO{sub 2} dielectrics by employing high-spatial resolution techniques such as energy dispersive x-ray spectroscopy and electron energy-loss spectroscopy using a scanning transmission electron microscope. In one region, we found a thin nickel layer at the NiSi/SiO{sub 2} interface originating from the migration of native oxide at the face of the poly-silicon. In another region, a Sb pileup was detected at the NiSi/SiO{sub 2} interface where the Ni L{sub 3}-edge spectrum showed Ni-Sb bonding, then it was suggested that Sb atoms exist at the bottom of NiSi, substituting for Si atoms in NiSi.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Ultrasonic characterization of interfaces in composite bonds

The inverse determination of imperfect interfaces from reflection spectra of normal and oblique incident ultrasonic waves in adhesive bonds of multidirectional composites is investigated. The oblique measurements are complicated by the highly dispersed nature of oblique wave spectra at frequencies above 3MHz. Different strategies for bond property reconstruction, including a modulation method, are discussed. The relation of measured interfacial spring density to the physico-chemical model of a composite interface described by polymer molecular bonds to emulate loss of molecular strength on an adhesive composite interface is discussed. This potentially relates the interfacial (adhesion) strength (number of bonds at the adhesive substrate interface) to the spring constant (stiffness) area density (flux), which is an ultrasonically measurable parameter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

X-ray reflectance studies of interface in ion beam sputtered CoFeB/MgO bilayers

This letter reports specular and diffuse x-ray reflectance studies of the interface in the ion beam sputtered CoFeB({approx}5-8 nm)/MgO({approx}2-5 nm) bilayers. The study reveals the specific roles of oxygen ion energy, substrate temperature, and reactive gas ambient on controlling the interface width in the bilayers. Depending on oxidation-method employed for MgO growth the interface width varies between 0.51 and 0.20 nm. Energy of assist ions ({<=}50 eV) plays a key role compared to the growth temperature in determining the sharpness of the interface. The bottom grown CoFeB exhibited significant increase in coercivity (H{sub C}), which also depends on MgO-growth process.

36 MATERIALS SCIENCE↗
DOE OSTI2012

The effect of MgO(111) interlayer on the interface phase stability and structure of BaFe{sub 12}O{sub 19}/SiC(0001)

We present a study on the effect of an interlayer of thin MgO(111) film on SiC(0001) on the interface phase stability and structure of the BaFe{sub 12}O{sub 19} (BaM). The 10 nm MgO(111) interlayer followed by the BaM film were grown by molecular beam epitaxy on 6H-SiC. Cross-sectional transmission electron microscopy shows the formation of a magnesium ferrite spinel phase at the interface, and after 25 nm, a well structured BaM film was observed. In addition to the two main phases (Mg-ferrite and BaM), a thin layer of SiOx (2-3 nm) is formed at the SiC interface. In spite of the formation of this amorphous layer, the diffraction studies show that the BaM film is epitaxially grown and it has a single crystal structure. The energy dispersive x-ray analysis from the interface region shows that the MgO layer prevents significant outdiffusion of the Si into the film. Total energy calculations by density functional theory were used to investigate the stability of the various phases and to explain the observed interfacial phases in the studied system.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Interface roughness induced asymmetric magnetic property in sputter-deposited Co/CoO/Co exchange coupled trilayers

The effect of interface roughness on magnetic properties of exchange coupled polycrystalline Co/CoO(t{sub AF})/Co trilayers has been investigated by varying antiferromagnetic layer (CoO) thickness. It has been found that the upper CoO/Co interface becomes rougher with increasing CoO layer thickness, resulting in stronger exchange bias of the upper interface than the lower one. The interfacial exchange coupling is strengthened by the increase of defect-generated uncompensated antiferromagnetic spins; such spins form coupling with spins in the Co layer at the interface. As a result, the CoO layer thickness dependence of exchange bias is much enhanced for the upper Co layer. The transition from anisotropic magnetoresistance to isotropic magnetoresistance for the top Co layer has also been found. This could be attributed to the defects, probably partial thin oxide layers, between Co grains in the top Co layer that leads a switch from spin-orbit scattering related magnetoresistance to spin-dependent electron scattering dominated magnetoresistance.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Tailoring interfacial exchange coupling with low-energy ion beam bombardment: Tuning the interface roughness

By ascertaining NiO surface roughness in a Ni{sub 80}Fe{sub 20}/NiO film system, we were able to correlate the effects of altered interface roughness from low-energy ion-beam bombardment of the NiO layer and the different thermal instabilities in the NiO nanocrystallites. From experiment and by modelling the temperature dependence of the exchange bias field and coercivity, we have found that reducing the interface roughness and changing the interface texture from an irregular to striped conformation enhanced the exchange coupling strength. Our results were in good agreement with recent simulations using the domain state model that incorporated interface mixing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Plasma plume effects on the conductivity of amorphous-LaAlO{sub 3}/SrTiO{sub 3} interfaces grown by pulsed laser deposition in O{sub 2} and Ar

Amorphous-LaAlO{sub 3}/SrTiO{sub 3} interfaces exhibit metallic conductivity similar to those found for the extensively studied crystalline-LaAlO{sub 3}/SrTiO{sub 3} interfaces. Here, we investigate the conductivity of the amorphous-LaAlO{sub 3}/SrTiO{sub 3} interfaces grown in different pressures of O{sub 2} and Ar background gases. During the deposition, the LaAlO{sub 3} ablation plume is also studied, in situ, by fast photography and space-resolved optical emission spectroscopy. An interesting correlation between interfacial conductivity and kinetic energy of the Al atoms in the plume is observed: to assure conducting interfaces of amorphous-LaAlO{sub 3}/SrTiO{sub 3}, the kinetic energy of Al should be higher than 1 eV. Our findings add further insights on mechanisms leading to interfacial conductivity in SrTiO{sub 3}-based oxide heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

The growth-temperature dependency and interface structure effects on the thermal conductivity of the highly textured AlN thin films on (001) Si substrates were systematically studied by characterizing the crystal structures, surface morphologies, interface structures, chemical compositions, and thermal conductivity using x-ray diffraction analysis, atomic force microscopy, high resolution transmission electron microscopy, x-ray photoelectron spectroscopy, and 3-omega method, respectively. By optimizing the interface microstructure and the growth temperature, thermal conductivity of polycrystalline AlN thin films can be greatly enhanced from 9.9 to 26.7 W/mK, when the growth temperature increases from 330 to 560 Degree-Sign C. This achievement is considered to be associated with the diminishment of the amorphous and disordered layer at the AlN/Si interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗