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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas

We report on fabrication and performance of sub-micrometer Ni/Au/Ge contacts to a two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Utilizing scanning transmission electron microscopy, energy dispersive x-ray spectroscopy, and low temperature electrical measurements, we investigate the relationship between contact performance and the mechanical and chemical properties of the annealed metal stack. Contact geometry and crystallographic orientation significantly impact performance. Our results indicate that the spatial distribution of germanium in the annealed contact plays a central role in the creation of high transmission contacts. We characterize the transmission of our contacts at high magnetic fields in the quantum Hall regime. Our work establishes that contacts with an area of 0.5 μm2 and resistance less than 400 Ω can be fabricated with high yield.

Physics↗
DOE OSTI2024

Acoustic and optical phonon frequencies and acoustic phonon velocities in Si-doped AlN thin films

We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metal–organic chemical vapor deposition on sapphire substrates. The Brillouin–Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ∼300 m/s at the doping level of 3 × 1019 cm−3. The knowledge of the acoustic phonon velocities can be used for the optimization of the ultra-wide bandgap semiconductor heterostructures and for minimizing the thermal boundary resistance of high-power devices.

Physics↗
DOE OSTI2025

Computational toolkit for predicting thickness of 2D materials using machine learning and autogenerated dataset by large language model

The thickness of 2D materials not only plays a crucial role in determining the performance of nanoelectronic and optoelectronic devices but also introduces complexities in predicting volume-dependent properties, such as energy storage capacity, due to the intrinsic vacuum within these materials. Although a plethora of experimental techniques, including but not limited to optical contrast, Raman spectroscopy, nonlinear optical spectroscopy, near-field optical imaging, and hyperspectral imaging, facilitate the measurement of 2D material thickness, comprehensive data for many materials remain elusive. Over the past decade, the exponential proliferation of 2D materials and their heterostructures has outstripped the capabilities of conventional experimental and computational approaches. In this evolving landscape, machine learning (ML) has emerged as an indispensable tool, offering a scalable approach to augment these traditional methodologies. Addressing the critical gap, we introduce THICK2D—Thickness Hierarchy Inference and Calculation Kit for 2D Materials. This Python-based computational framework harnesses an autogenerated thickness database, developed using large language models, and advanced ML algorithms to facilitate the rapid and scalable estimation of material thickness, relying solely on crystallographic data. To demonstrate the utility and robustness of THICK2D, we successfully used the toolkit to predict the thickness of more than 8000 2D-based materials, sourced from two extensive 2D materials databases. THICK2D is disseminated as an open-source utility, accessible on GitHub at https://github.com/gmp007/THICK2D, and archived on Zenodo at https://10.5281/zenodo.11216648.

Ekuma, Chinedu E. (ORCID:0000000258527556)↗
DOE OSTI2025

From prediction to experimental realization of ferroelectric wurtzite Al1− x Gd x N alloys

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors, such as Si, SiC, and III–Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al1−xGdxN alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction x with x > 0.10–0.15. Experimentally, ferroelectric switching is observed at room temperature in Al1−xGdxN films with x > 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously [Lee et al., Sci. Adv. 10, eadl0848 (2024)]. This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Introducing new resonant soft x-ray scattering capability in SSRL

Resonant soft x-ray scattering (RSXS) is a powerful technique for probing both spatial and electronic structures within solid-state systems. Here, we present a newly developed RSXS capability at beamline 13-3 of the Stanford Synchrotron Radiation Lightsource, designed to enhance materials science research. This advanced setup achieves a base sample temperature as low as 9.8 K combined with extensive angular motions (azimuthal ϕ and flipping χ), enabling comprehensive exploration of reciprocal space. Two types of detectors—an Au/GaAsP Schottky photodiode and a charge-coupled device detector with over 95% quantum efficiency—are integrated to effectively capture scattered photons. Extensive testing has confirmed the enhanced functionality of this RSXS setup, including its temperature and angular performance. The versatility and effectiveness of the system have been demonstrated through studies of various materials, including superlattice heterostructures and high-temperature superconductors.

Kuo, Cheng-Tai [SLAC National Accelerator Laborato↗
DOE OSTI2026

Broad-range tuning of ferroelectric switching of La x Bi 1−x FeO 3 epitaxial films via digital doping using off-axis co-sputtering

To investigate the scope of ferroelectric behavior in La-substituted BiFeO 3 films, La x Bi 1−x FeO 3 epitaxial films were synthesized using off-axis co-sputtering on SrTiO 3 (001) and DyScO 3 (110) substrates with a SrRuO 3 bottom electrode layer. A digital-doping deposition method was used to enable precise control and continuous tuning of La concentration in high-quality LaxBi 1−x FeO 3 films across a wide range of x = 0.05–0.60, which was systematically investigated using piezoresponse force microscopy. Robust and reversible out-of-plane ferroelectric switching has been observed up to x = 0.35, while films with x ≥ 0.37 exhibit no measurable ferroelectric behavior, indicating a sharp ferroelectric-to-paraelectric phase transition between x = 0.35 and 0.37. This represents the highest reported La concentration in LaxBi 1−x FeO 3 films that retains ferroelectric ordering, highlighting opportunities to engineer ferroelectric and multiferroic properties in complex oxide heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Epitaxial growth and physical properties of Bi 2 Ru 2 O 7 thin films on YSZ(111) substrates

We systematically investigated the growth of Bi 2 Ru 2 O 7 thin films on a Y-stabilized ZrO 2 (111) substrate using pulsed laser deposition by mapping the influence of growth temperature and oxygen partial pressure on phase stability, lattice parameters, and cation ratio. The results show that the epitaxial stabilization requires a minimum growth temperature, which is rather insensitive to the pressure. Meanwhile, the Bi:Ru ratio decreases when increasing growth temperature or decreasing pressure. By constructing the temperature–pressure phase diagram, an optimal growth window within the epitaxial phase was established. On the other hand, the electrical resistivity remains at a similar level within the epitaxial phase with only subtle changes to the temperature dependence, indicative of the robustness of the conductivity against composition variation. Our study provides a foundation for future investigations on thin films and heterostructures that utilize Bi 2 Ru 2 O 7 .

Crystallography↗
DOE OSTI2020

Experimental studies of 1.5 – 1.6 μm high-power single-frequency semiconductor lasers

High-power semiconductor laser systems based on 1.5 – 1.6 μm single-frequency distributed feedback (DFB) lasers with a sidewall Bragg diffraction grating are developed and their current – voltage, light – current, and spectral characteristics are experimentally studied. The characteristics of conventional lasers with a Fabry – Perot cavity and DFB lasers fabricated from one and the same heterostructure are compared. At a pump current not exceeding 700 mA, a conventional laser with a cavity length of 1.6 mm and a mesa-stripe width of 3 μm emits a power no lower than 200 mW versus 150 mW of the DFB laser; both lasers are mounted in a housing 11 mm in diameter. The DFB laser mounted in a butterfly housing emits a power no lower than 100 mW at the exit of the single-mode cable at a pump current not exceeding 500 mA, which, at a 60 % coupling efficiency, corresponds to a power no lower than 165 mW; the side-mode suppression ratio in this case is no lower than 53 dB. It is shown that the wavelength deviation with changing pump current and temperature is almost an order of magnitude lower for the DFB laser than for the conventional laser. (paper)

36 MATERIALS SCIENCE↗
DOE OSTI2020

1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide

High-power 1.5 – 1.6-μm semiconductor lasers with an asymmetric periodic optically coupled waveguide are developed and their current – voltage, light – current, and spectral characteristics are experimentally studied. The characteristics of these lasers are compared with the characteristics of traditional lasers based on double separate-confinement heterostructures. It is shown that the developed lasers have lower divergence and almost the same threshold and power characteristics as conventional lasers with Fabry – Perot resonators. The developed lasers with a cavity length of 1.6 mm and a mesa-stripe contact width of 3 μm mounted in a housing 11 mm in diameter have a power no lower than 200 mW at a pump current not exceeding 700 mA with a divergence of 25 – 35° versus 45° typical for conventional lasers. (lasers)

36 MATERIALS SCIENCE↗
DOE OSTI2020

Numerical simulation of the divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic multilayer AlGaInAs/InP waveguide

The divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic (multilayer) waveguide are numerically simulated. The reasons for the choice of the given heterostructure design are explained, and the consequences of choosing other layer structures are considered. It is shown how to choose the active waveguide thickness, the active region position on the waveguide, and the multilayer waveguide grating period. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Quantum cascade laser with bound-to-quasi-continuum optical transitions at a temperature of up to 371 K

Based on a matched Ga{sub 0.47}In{sub 0.53}As/Al{sub 0.48}In{sub 0.52}As heteropair, we have developed a quantum cascade laser emitting at a wavelength of 7.4 μm. The chosen heterostructure with a relatively large number of quantum wells and barriers represents two mini-bands separated by a mini-gap with a localised doublet level near the upper mini-band, which provides a wide emission band (∼100 cm{sup −1}). In a pulse regime, the maximal laser operation temperature is 371 K. Such a high temperature is explained by two factors: a large energy of the transfer from the doublet to the upper mini-band and a large volt defect. The characteristic temperatures T{sub 0} are found, which are equal to 170 K for low (less than 300 K) temperatures and 270 K for the range of 300 − 370 K. In addition, optical cavity losses are determined to be 2.5 and 7.7 cm{sup −1} at temperatures of 80 and 254 K, respectively. The pulse power is 0.3 W at 80 K and 0.05 W at 293 K. (lasers, active media)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers

Lasers based on AlGaAs/InGaAs/GaAs heterostructures operating in the spectral range of 1.0 − 1.1 μm are investigated in order to optimise cladding layers. The effect of the thickness and composition of the cladding layers on the leakage of radiation from the laser waveguide is analysed. It is shown that for cladding thicknesses of 0.86 − 1.24 μm, it almost does not affect the output optical power. The effect of the crystal length and reflectivity of the laser mirrors on the leaky wave is demonstrated. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Superluminescent diodes in the spectral range of 1.5 – 1.6 μm based on strain-compensated AlGaInAs/InP quantum wells

Superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are investigated. The influence of elastic strains in the active region on the output characteristics of the devices is analysed. It is shown that such a design of a superluminescent diode allows an optical power of more than 5 mW, a radiation spectrum width of more than 60 nm, a degree of output radiation polarisation up to 30 dB to be obtained at the output of a single-mode fibre, and has a great potential for further improvement. (paper)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Nanosecond semiconductor disk laser emitting at 496.5 nm

An optically pumped semiconductor disk laser based on a heterostructure containing ten CdS/ZnSe coupled quantum wells with type-II band offsets is studied. The structure was grown by metalorganic vapour phase epitaxy (MOVPE) on a GaAs substrate. The peak power of the semiconductor disk laser achieved at room temperature under longitudinal pumping by a repetitively pulsed N{sub 2} laser was 0.75 W at a wavelength of 496.5 nm, a pulse duration of 3 ns, and a pulse repetition rate of 100 Hz. The slope efficiency of the disk laser was 2.7 %. The total divergence angle at a cavity length of 1.1 mm varied from 5 mrad near the lasing threshold to 15 mrad at the maximum pump power. (lasers)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Triple integrated laser – thyristor

A triple laser – thyristor, i. e., a semiconductor laser with three emitting sections monolithically integrated with an electronic switch (thyristor) is experimentally studied. For comparison, the output characteristics of single and double laser – thyristors are presented. It is shown that the functional integration of a laser with a thyristor in one heterostructure allows the laser to efficiently operate in a pulsed regime (output power ∼50 W), the use of vertical integration of two laser sections increases the power to ∼90 W, and the integration of three laser sections makes it possible to increase the output optical power to ∼120 W with all other conditions being the same. (paper)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide and an increased electron barrier

Semiconductor lasers based on AlGaInAs/InP heterostructures with an ultra-narrow waveguide and an increased electron barrier layer are developed. It is shown that the use of this waveguide in conjunction with profiled doping ensures a balance between internal optical losses and heat resistance. Additional use of strained wide-bandgap layers as blocking barriers limiting electron leakage from the active region makes it possible to increase the output power at the same pump current. The developed lasers with a stripe contact 100 μm wide demonstrate at room temperature an output optical power of 4.0 – 4.4 W (pump current 14 A) in a continuous-wave regime and 15 – 17 W (100 A) in a pulsed regime (100 ns, 1 kHz) at wavelengths of 1450 – 1500 nm. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Room-temperature skyrmion phase in bulk Cu 2 OSeO 3 under high pressures

Significance Skyrmion materials hold great promise for information technology due to the extremely low current needed to modify the spin configurations and the small size of magnetic domains. To facilitate their application, one great challenge is to break the magnetic field–temperature phase space restriction for the skyrmion state. We found that the temperature region for the skyrmion phase in bulk Cu 2 OSeO 3 can be greatly enhanced under physical pressure, making applications more practical by the use of strained heterostructures, for example. The observation of additional structures suggests that the skyrmion state may be insensitive to the underlying crystal structure. This work will stimulate research on finding skyrmion materials with different crystal structures and retaining the room-temperature skyrmion state at ambient condition.

Deng, Liangzi↗
DOE OSTI2024

Torsional force microscopy of van der Waals moirés and atomic lattices

In a stack of atomically thin van der Waals layers, introducing interlayer twist creates a moiré superlattice whose period is a function of twist angle. Changes in that twist angle of even hundredths of a degree can dramatically transform the system’s electronic properties. Setting a precise and uniform twist angle for a stack remains difficult; hence, determining that twist angle and mapping its spatial variation is very important. Techniques have emerged to do this by imaging the moiré, but most of these require sophisticated infrastructure, time-consuming sample preparation beyond stack synthesis, or both. In this work, we show that torsional force microscopy (TFM), a scanning probe technique sensitive to dynamic friction, can reveal surface and shallow subsurface structure of van der Waals stacks on multiple length scales: the moirés formed between bi-layers of graphene and between graphene and hexagonal boron nitride (hBN) and also the atomic crystal lattices of graphene and hBN. In TFM, torsional motion of an Atomic Force Microscope (AFM) cantilever is monitored as it is actively driven at a torsional resonance while a feedback loop maintains contact at a set force with the sample surface. TFM works at room temperature in air, with no need for an electrical bias between the tip and the sample, making it applicable to a wide array of samples. It should enable determination of precise structural information including twist angles and strain in moiré superlattices and crystallographic orientation of van der Waals flakes to support predictable moiré heterostructure fabrication.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗