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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Electron optics for 4 MeV ultrafast electron microscope - Final Report

Calabazas Creek Research, Inc. (CCR), in collaboration with Northern Illinois University (NIU), proposed to leverage CCR’s experience in electron beam generation and focusing and NIU’s experience in electron microscopy to develop a 4 MeV UEM with sub-ns temporal resolution and 0.3 nm spatial resolution with a relative energy spread of 10-5. Important design tools for the program were CCR’s 3D, finite element code Beam Optics Analyzer (BOA) and the photocathode design code PHOTOQE. However, early in the program it became clear that information necessary to use PHOTOQE was not available, and the program focused on the modifying to BOA to provide the required functionality.

beam optics simulation↗
DOE OSTI2016

ELECTRON CYCLOTRON MASER EMISSIONS FROM EVOLVING FAST ELECTRON BEAMS

Fast electron beams (FEBs) are common products of solar active phenomena. Solar radio bursts are an important diagnostic tool for understanding FEBs and the solar plasma environment in which they propagate along solar magnetic fields. In particular, the evolution of the energy spectrum and velocity distribution of FEBs due to the interaction with the ambient plasma and field during propagation can significantly influence the efficiency and properties of their emissions. In this paper, we discuss the possible evolution of the energy spectrum and velocity distribution of FEBs due to energy loss processes and the pitch-angle effect caused by magnetic field inhomogeneity, and we analyze the effects of the evolution on electron-cyclotron maser (ECM) emission, which is one of the most important mechanisms for producing solar radio bursts by FEBs. Our results show that the growth rates all decrease with the energy loss factor Q , but increase with the magnetic mirror ratio σ as well as with the steepness index δ . Moreover, the evolution of FEBs can also significantly influence the fastest growing mode and the fastest growing phase angle. This leads to the change of the polarization sense of the ECM emission. In particular, our results also reveal that an FEB that undergoes different evolution processes will generate different types of ECM emission. We believe the present results to be very helpful for a more comprehensive understanding of the dynamic spectra of solar radio bursts.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2016

Constraint on a cosmological variation in the proton-to-electron mass ratio from electronic co absorption

Carbon monoxide (CO) absorption in the sub-damped Lyα absorber at redshift z{sub abs}≃2.69 toward the background quasar SDSS J123714.60+064759.5 (J1237+0647) was investigated for the first time in order to search for a possible variation of the proton-to-electron mass ratio, μ, over a cosmological timescale. The observations were performed with the Very Large Telescope/Ultraviolet and Visual Echelle Spectrograph with a signal-to-noise ratio of 40 per 2.5 km s{sup −1} per pixel at ∼5000 Å. Thirteen CO vibrational bands in this absorber are detected: the A{sup 1}Π − X{sup 1}Σ{sup +} (ν{sup ′}, 0) for ν{sup ′}=0--8, B{sup 1}Σ{sup +} − X{sup 1}Σ{sup +} (0, 0), C{sup 1}Σ{sup +} − X{sup 1}Σ{sup +} (0, 0), and E{sup 1}Π − X{sup 1}Σ{sup +} (0, 0) singlet–singlet bands and the d{sup 3}Δ − X{sup 1}Σ{sup +} (5, 0) singlet–triplet band. An updated database including the most precise molecular inputs needed for a μ-variation analysis is presented for rotational levels J = 0–5, consisting of transition wavelengths, oscillator strengths, natural lifetime damping parameters, and sensitivity coefficients to a variation of the proton-to-electron mass ratio. A comprehensive fitting method was used to fit all the CO bands at once and an independent constraint of Δμ/μ=(0.7±1.6{sub stat}±0.5{sub syst})×10{sup −5} was derived from CO only. A combined analysis using both molecular hydrogen and CO in the same J1237+0647 absorber returned a final constraint on the relative variation of Δμ/μ=(−5.6±5.6{sub stat}±3.1{sub syst})×10{sup −6}, which is consistent with no variation over a look-back time of ∼11.4 Gyr.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2023

AlGaN High Electron Mobility Transistor for High-Temperature Logic

Here we report on AlGaN high electron mobility transistor (HEMT)-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature-dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal scheme for use in high temperatures, and (c) over-temperature testing of discrete devices and inverters. Hall mobility data (from 30°C to 500°C) revealed the reference GaN-channel HEMT experienced a 6.9x reduction in mobility, whereas the AlGaN channel HEMTs experienced about a 3.1x reduction. Furthermore, a greater aluminum contrast between the barrier and channel enabled higher carrier densities in the two-dimensional electron gas for all temperatures. The combination of reduced variation in mobility with temperature and high sheet carrier concentration showed that an Al-rich AlGaN-channel HEMT with a high barrier-to-channel aluminum contrast is the best option for an extreme temperature HEMT design. Three gate metal stacks were selected for low resistivity, high melting point, low thermal expansion coefficient, and high expected barrier height. The impact of thermal cycling was examined through electrical characterization of samples measured before and after rapid thermal anneal. The 200-nm tungsten gate metallization was the top performer with minimal reduction in drain current, a slightly positive threshold voltage shift, and about an order of magnitude advantage over the other gates in on-to-off current ratio. After incorporating the tungsten gate metal stack in device fabrication, characterization of transistors and inverters from room temperature up to 500°C was performed. The enhancement-mode (e-mode) devices’ resistance started increasing at about 200°C, resulting in drain current degradation. This phenomenon was not observed in depletion-mode (d-mode) devices but highlights a challenge for inverters in an e-mode driver and d-mode load configuration.

42 ENGINEERING↗
DOE OSTI2018

Crossover-Induced Spin Fluctuation and Electron Pairing in Strongly Correlated Electrons

We investigate the two-dimensional (2D) Hubbard model and d-p model as a model for cuprate high-temperature superconductors, by employing an optimized variational Monte Carlo method. We improved the many-body wave function starting from the simple Gutzwiller function. On the basis of optimized variational wave functions, we show that there is a superconducting phase in the ground state of the 2D Hubbard model. The on-site repulsive Coulomb interaction U can bring about high-temperature superconductivity because its characteristic energy is of the order of eV. The attractive interaction between electrons is induced by the crossover from weakly to strongly correlated regions. High-temperature superconductivity is possible in the strongly correlated region, where U is greater than the bandwidth.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Atomic Imaging Using Secondary Electrons in a Scanning Transmission Electron Microscope: Experimental Observations and Possible Mechanisms

We report detailed investigation of high-resolution imaging using secondaryelectrons (SE) with a sub-nanometer probe in an aberration-corrected transmissionelectron microscope, Hitachi HD2700C. This instrument also allows us to acquire the corresponding annular dark-field (ADF) images both simultaneously and separately. We demonstrate that atomic SE imaging is achievable for a wide range of elements, from uranium to carbon. Using the ADF images as a reference, we studied the SE image intensity and contrast as functions of applied bias, atomic number, crystal tilt, and thickness to shed light on the origin of the unexpected ultrahigh resolution in SE imaging. We have also demonstrated that the SE signal is sensitive to the terminating species at a crystal surface. Apossiblemechanism for atomic-scale SE imaging is proposed. The ability to image both the surface and bulk of a sample at atomic-scale is unprecedented, and can have important applications in the field of electron microscopy and materials characterization.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

The Stanford Nanocharacterization Laboratory (SNL) and Recent Applications of an Aberration-Corrected Environmental Transmission Electron Microscope

Here, this article describes the establishment, over a period of 10 years or so, of a multi-user, institution-wide facility for the characterization of materials and devices at the nanoscale. Emphasis is placed on the type of equipment that we have found to be most useful for our users, and the business strategy that maintains its operations. A central component of our facility is an aberration-corrected environmental transmission electron microscope and its application is summarized in the studies of plasmon energies of silver nanoparticles, the band gap of PbS quantum dots, atomic site occupancy near grain boundaries in yttria stabilized zirconia, the lithiation of silicon nanoparticles, in situ observations on carbon nanotube oxidation and the electron tomography of varicella zoster virus nucleocapsids.

bio-inspired↗
DOE OSTI2012

Oriented Growth of Al2O3:ZnO Nanolaminates for Use as Electron-Selective Electrodes in Inverted Polymer Solar Cells

Atomic layer deposition is used to synthesize Al{sub 2}O{sub 3}:ZnO(1:x) nanolaminates with the number of deposition cycles, x, ranging from 5 to 30 for evaluation as optically transparent, electron-selective electrodes in polymer-based inverted solar cells. Al{sub 2}O{sub 3}:ZnO(1:20) nanolaminates are found to exhibit the highest values of electrical conductivity (1.2 x 10{sup 3} S cm{sup 01}; more than six times higher than for neat ZnO films), while retaining a high optical transmittance ({>=}80% in the visible region) and a low work function (4.0 eV). Such attractive performance is attributed to the structure (ZnO crystal size and crystal alignment) and doping level of this intermediate Al{sub 2}O{sub 3}:ZnO film composition. Polymer-based inverted solar cells using poly(3-hexylthiophene) (P3HT):phenyl-C{sub 61}-butyric acid methyl ester (PCBM) mixtures in the active layer and Al{sub 2}O{sub 3}:ZnO(1:20) nanolaminates as transparent electron-selective electrodes exhibit a power conversion efficiency of 3% under simulated AM 1.5 G, 100 mW cm{sup -2} illumination.

14 SOLAR ENERGY↗
DOE OSTI2015

Effects of Particle Size, Electronic Connectivity, and Incoherent Nanoscale Domains on the Sequence of Lithiation in LiFePO 4 Porous Electrodes

High-resolution X-ray microscopy is used to investigate the sequence of lithiation in LiFePO 4 porous electrodes. For electrodes with homogeneous interparticle electronic connectivity via the carbon black network, the smaller particles lithiate first. For electrodes with heterogeneous connectivity, the better-connected particles preferentially lithiate. Correlative electron and X-ray microscopy also show the presence of incoherent nanodomains that lithiate as if they are separate particles.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Weak Electron Phonon Coupling and Deep Level Impurity for High Thermoelectric Performance Pb 1–x Ga x Te

High ZT of 1.34 at 766 K and a record high average ZT above 1 in the temperature range of 300-864 K are attained in n-type PbTe by engineering the temperature-dependent carrier concentration and weakening electron–phonon coupling upon Ga doping. The experimental studies and first principles band structure calculations show that doping with Ga introduces a shallow level impurity contributing extrinsic carriers and imparts a deeper impurity level that ionizes at higher temperatures. This adjusts the carrier concentration closer to the temperature-dependent optimum and thus maximizes the power factor in a wide temperature range. The maximum power factor of 35 μW cm -1 K -2 is achieved for the Pb 0.98 Ga 0.02 Te compound, and is maintained over 20 μWcm-1 K-2 from 300 to 767 K. Band structure calculations and X-ray photoelectron spectroscopy corroborate the amphoteric role of Ga in PbTe as the origin of shallow and deep levels. Additionally, Ga doping weakens the electron–phonon coupling, leading to high carrier mobilities in excess of 1200 cm 2 V -1 s -1 . Enhanced point defect phonon scattering yields a reduced lattice thermal conductivity. Here, we provide a new avenue, beyond the conventional shallow level doping, for further improving the average ZT in thermoelectric materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Mediated Inner‐Sphere Electron Transfer Induces Homogeneous Reduction of CO 2 via Through‐Space Electronic Conjugation**

Abstract The electrocatalytic reduction of CO 2 is an appealing method for converting renewable energy sources into value‐added chemical feedstocks. We report a co‐electrocatalytic system for the reduction of CO 2 to CO comprised of a molecular Cr complex and dibenzothiophene‐5,5‐dioxide (DBTD) as a redox mediator, which achieves high activity (TOF=1.51–2.84×10 5 s −1 ) and quantitative selectivity. Under aprotic or protic conditions, DBTD produces a co‐electrocatalytic response with 1 by coordinating trans to the site of CO 2 binding and mediating electron transfer from the electrode with quantitative efficiency for CO. This assembly is reliant on through‐space electronic conjugation between the π frameworks of DBTD and the bpy fragment of the catalyst ligand, with contributions from dispersive interactions and weak sulfone coordination.

Hooe, Shelby L.↗
DOE OSTI2021

Mediated Inner–Sphere Electron Transfer Induces Homogeneous Reduction of CO 2 via Through–Space Electronic Conjugation

The electrocatalytic reduction of CO 2 is an appealing method for converting renewable energy sources into value-added chemical feedstocks. We report a co-electrocatalytic system for the reduction of CO 2 to CO comprised of a molecular Cr complex and dibenzothiophene-5,5-dioxide (DBTD) as a redox mediator, which achieves high activity (TOF=1.51–2.84×10 5 s –1 ) and quantitative selectivity. Under aprotic or protic conditions, DBTD produces a co-electrocatalytic response with 1 by coordinating trans to the site of CO 2 binding and mediating electron transfer from the electrode with quantitative efficiency for CO. Furthermore, this assembly is reliant on through-space electronic conjugation between the π frameworks of DBTD and the bpy fragment of the catalyst ligand, with contributions from dispersive interactions and weak sulfone coordination.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Cation ratio fluctuations in Cu 2 ZnSnS 4 at the 20 nm length scale investigated by analytical electron microscopy

Kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) is a sustainable material for thin‐film photovoltaics with device efficiencies greater than 12% have been demonstrated. Despite similar crystal structure and polycrystalline film microstructures, there is widespread evidence for larger‐amplitude potential and bandgap fluctuations in CZTS than in the analogous Cu(In,Ga)Se 2 (CIGSe) chalcopyrite material. This disorder is believed to account for a sizable part of the larger open‐circuit voltage ( V OC ) deficit in CZTS devices, yet the detailed origins and length scales of these fluctuations have not been fully elucidated. Herein, we present a transmission electron microscopy study focusing on composition variation within bulk multicrystals of CZTS grown by the travelling heater method (THM). In these slow‐cooled, solution grown crystals we find direct evidence for spatial composition fluctuations of amplitude <1 at.% (∼5 × 10 20 cm −3 ) and thus, explainable by point defects. However, rather than being homogeneously‐distributed we find a characteristic 20 nm length scale for these fluctuations, which sets a definite length scale for band gap and potential fluctuations. At Σ3 grain boundaries, we find no evidence of composition variation compared to the bulk. The finding highlights such variations reported at grain boundaries in polycrystalline thin‐films are direct consequences of processing methods and not intrinsic properties of CZTS itself.

Aguiar, Jeffery A.↗