Point-contact Andreev reflection spectroscopy on Bi 2 Se 3 single crystals
In order to study how Andreev reflection (AR) occurs between a superconductor and a three-dimensional topological insulator (TI), we use superconducting Nb tips to perform point-contact AR spectroscopy at 4.2 K on as-grown single crystals of Bi 2 Se 3 . Scanning tunneling spectroscopy and scanning tunneling microscopy are also used to characterize the superconducting tip and both the doping level and surface condition of the TI sample. Furthermore, the point-contact measurements show clear spectral signatures of AR, as well as a depression of zero-bias conductance with decreasing junction impedance. The latter observation can be attributed to interfacial Rashba spin-orbit coupling, and the presence of bulk bands at the Fermi level in our samples suggests that bulk states of Bi2Se3 are involved in the observed AR.