DOE OSTI2016
When developing semiconductor radiation detectors detailed characterization of the detector behavior is required. The ability of a semiconductor radiation detector to collect the charge liberated by incident ionizing radiation is a critical characteristic. Several factors influence the charge collection efficiency of a semiconductor radiation detector, including electron-hole trapping, applied electric field strength, and dopant concentrations and dimensions of low doped regions. Applying a reverse bias electric potential to a low doped semiconductor region creates a free charge carrier depleted region and establishes an electric field which can remove subsequently freed charge in the form of an electrical signal. When ionizing radiation is incident upon a semiconductor electron-hole pairs are generated. These charge carriers are created along the path of the ionizing radiation regardless of the doping concentration. However, only the charge freed in the low doped epitaxial region of a detector will be collected as a result of the applied electric field. When the electric field is insufficient to develop a depleted region equal to or larger than the range of the ionizing radiation in the detector material some charge freed by the ionizing radiation outside of the sensitive region will be lost, thus potentially resulting in less than complete charge collection. The incomplete collection of charge complicates the analysis of the incident particle energy spectrum. Charge freed in the highly doped bulk region beyond the low doped epitaxial region may diffuse back into the low doped depleted region and be subsequently included in the integral pulse. The amount of charge collected as a result of this diffusion mechanism is dependent upon the diffusion length of the charge carriers in the material. The diffusion length is subsequently dependent on the material properties of the detector including the number of defects, trapping centers, and temperature. In order to fully characterize the properties of 4H-SiC as a radiation detector the diffusion length was calculated by adjusting the theoretical diffusion length value used in the calculation of the charge collection efficiency to agree with empirically observed charge collection efficiencies. The discrepancy between the observed and theoretical charge collection efficiency at 50 to 150 volts applied bias indicates an unexplained charge collection phenomenon which is contributing to the larger than predicted charge collection efficiency of the detectors. This voltage range corresponds to an intermediate applied bias, indicating that either the theoretical depletion width is too short, the diffusion length varies with the composition of the region that the charge carriers are diffusing through, or some other phenomenon is involved. If the charge carrier diffusion length varies depending on whether or not the diffusing charge is freed in unbiased epitaxy or bulk layer, then a function describing the variation of the diffusion layer could be determined by measuring the diffusion length at the applied voltages used previously, but over a range of epitaxial layer thicknesses. Future work includes the characterization of the effects of high temperature operation on the diffusion length of 4H-SiC in addition to measuring the effects of varying energy alpha emitter electrodeposition on the observed diffusion length. Additional Schottky barrier contacts, namely those with a nickel-platinum contact, will be tested in various sizes which have been developed in order to eliminate certain failure mechanisms and explore the potential effects of Schottky contact size on charge collection efficiency. (authors)