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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,369 records · Page 76
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Development of metallization process. FSA project, cell and module formation research area

New pastes were evaluated that contained additives to aid in the silicon-to-metallization contact. None were completely successful. A reevaluation of the molybdenum oxide paste and the two-step screen printing process was done. The oxide paste did not show promise. The two-step process enabled soldering of the cells but the cells still had a high series resistance. Pastes are on order from a different manufacturer.

Garcia, A., III↗
DOE OSTI2016

Influence of intermediate layers on the surface condition of laser crystallized silicon thin films and solar cell performance

The intermediate layer (IL) between glass substrate and silicon plays a significant role in the optimization of multicrystalline liquid phase crystallized silicon thin film solar cells on glass. This study deals with the influence of the IL on the surface condition and the required chemical surface treatment of the crystallized silicon (mc-Si), which is of particular interest for a-Si:H heterojunction thin film solar cells. Two types of IL were investigated: sputtered silicon nitride (SiN) and a layer stack consisting of silicon nitride and silicon oxide (SiN/SiO). X-ray photoelectron spectroscopy measurements revealed the formation of silicon oxynitride (SiO{sub x}N{sub y}) or silicon oxide (SiO{sub 2}) layers at the surface of the mc-Si after liquid phase crystallization on SiN or SiN/SiO, respectively. We propose that SiO{sub x}N{sub y} formation is governed by dissolving nitrogen from the SiN layer in the silicon melt, which segregates at the crystallization front during crystallization. This process is successfully hindered, when additional SiO layers are introduced into the IL. In order to achieve solar cell open circuit voltages above 500 mV, a removal of the formed SiO{sub x}N{sub y} top layer is required using sophisticated cleaning of the crystallized silicon prior to a-Si:H deposition. However, solar cells crystallized on SiN/SiO yield high open circuit voltage even when a simple wet chemical surface treatment is applied. The implementation of SiN/SiO intermediate layers facilitates the production of mesa type solar cells with open circuit voltages above 600 mV and a power conversion efficiency of 10%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Scalable synthesis of nanoporous silicon microparticles for highly cyclable lithium-ion batteries

Nanoporous silicon is a promising anode material for high energy density batteries due to its high cycling stability and high tap density compared to other nanostructured anode materials. However, the high cost of synthesis and low yield of nanoporous silicon limit its practical application. Here, we develop a scalable, low-cost top-down process of controlled oxidation of Mg 2 Si in the air, followed by HCl removal of MgO to generate nanoporous silicon without the use of HF. By controlling the synthesis conditions, the oxygen content, grain size and yield of the porous silicon are simultaneously optimized from commercial standpoints. In situ environmental transmission electron microscopy reveals the reaction mechanism; the Mg 2 Si microparticle reacts with O 2 to form MgO and Si, while preventing SiO 2 formation. Owing to the low oxygen content and microscale secondary structure, the nanoporous silicon delivers a higher initial reversible capacity and initial Coulombic efficiency compared to commercial Si nanoparticles (3,033 mAh/g vs. 2,418 mAh/g, 84.3% vs. 73.1%). Synthesis is highly scalable, and a yield of 90.4% is achieved for the porous Si nanostructure with the capability to make an excess of 10 g per batch. Our synthetic nanoporous silicon is promising for practical applications in next generation lithium-ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2020

Transient Microstructure Evolutions and Local Properties of Dual-Phase 980 MPa Grade Steel Via Friction Stir Spot Processing

Friction stir processing is a novel solid-state process to modify microstructures and their properties by intense, localized plastic deformation. However, little research has been reported for microstructure evolutions of advanced high-strength steels during the process. The present work focuses on the study of transient microstructure changes and local mechanical properties for friction stir spot processed dual-phase (DP) 980 MPa grade steel (DP980) under different peak temperatures. A pinless silicon nitride ceramic tool was used to produce relatively simple material deformation and flow near the tool. Friction stir spot processed steel samples were characterized by optical and electron microscopies. Furthermore, Vickers microhardness and nano-indentation measurements were used to study local mechanical properties for correlation with microstructures. A swallow layer of refined grains (<0.6 µm) was obtained with a low peak temperature (under 400 °C), whereas higher peak temperatures (>Ac 1 ) led to a change in grain size with different microstructures (fine-grained DP or martensite). Electron back-scattered diffraction characterizations revealed a large deformation in the as-received microstructures (mixture of ferrite and tempered martensite) induced by friction stir spot processing, leading to recrystallization and grain refinement around the stirred zone. Also, nano-indentation measurements showed a higher hardness than the hardness of the as-received DP980. Friction stir processing with different process conditions effectively changed microstructures and local mechanical properties.

36 MATERIALS SCIENCE↗
DOE OSTI2022

PbI 2 Nanocrystal Growth by Atomic Layer Deposition from Pb(tmhd) 2 and HI

Atomic layer deposition (ALD) allows for fine control over the thickness, stoichiometry, and structural defects of materials. ALD provides a suitable route to deposit lead halides, which can further be converted to perovskites for photovoltaics, photoemission, and photodetection, among other applications. Deposition of lead halides by ALD has already begun to be explored; however, the precursors used in published processes are highly hazardous, require expensive fabrication processes, or contain impurities that can jeopardize the optoelectronic properties of metal halide perovskites after conversion. In this work, we deposited lead iodide (PbI 2 ) by a facile ALD process involving only two readily accessible and low-cost precursors. PbI 2 nanocrystals were grown on soda-lime glass (SLG), silicon dioxide support grids, and silicon wafer substrates and provided the groundwork for further investigation into developing lead halide perovskite processes by ALD. Further, the ALD-grown PbI 2 was characterized by annular dark-field scanning transmission electron microscopy (ADF-STEM), atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), X-ray fluorescence (XRF), and X-ray photoemission spectroscopy (XPS), among other methods. This work presents the first step to synthesize lead halide perovskites with atomic control for applications such as interfacial layers in photovoltaics and for deposition in microcavities for lasing.

36 MATERIALS SCIENCE↗
DOE OSTI2018

The Influence of Dipole Polarization of an Emitting Surface on Autoemission Thresholds of a Multitip Silicon Cathode Matrices

Regularities of changes in the structural-phase composition and morphological and field-emission characteristics of surface-structured silicon wafers with various types of conductivity have been studied. It is shown that the use of a fluorocarbon plasma in the process of structuring, along with a carbon mask coating, allows obtaining preset autoemission currents of silicon cathode matrices when the external electric-field strength varies in a wide range irrespectively of the change of the gain factors of the fields of the emitting protrusions. The dominant role of dipole polarization in autoemission of electrons in surface-modified silicon structures has been established.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Precision Tomography of a Three-Qubit Donor Quantum Processor in Silicon

Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, owing to the lack of methods with which to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31 P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterized using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Because electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1981

A Module Experimental Process System Development Unit (MEPSDU)

Design work for a photovoltaic module, fabricated using single crystal silicon dendritic web sheet material, resulted in the identification of surface treatment to the module glass superstrate which improved module efficiencies. A final solar module environmental test, a simulated hailstone impact test, was conducted on full size module superstrates to verify that the module's tempered glass superstrate can withstand specified hailstone impacts near the corners and edges of the module. Process sequence design work on the metallization process selective, liquid dopant investigation, dry processing, and antireflective/photoresist application technique tasks, and optimum thickness for Ti/Pd are discussed. A noncontact cleaning method for raw web cleaning was identified and antireflective and photoresist coatings for the dendritic webs were selected. The design of a cell string conveyor, an interconnect feed system, rolling ultrasonic spot bonding heat, and the identification of the optimal commercially available programmable control system are also discussed. An economic analysis to assess cost goals of the process sequence is also given.

Source record↗
DOE OSTI2016

Injection molding of high precision optics for LED applications made of liquid silicone rubber

Light Emitting Diodes (LED) conquer the growing global market of lighting technologies. Due to their advantages, they are increasingly used in consumer products, in lighting applications in the home and in the mobility sector as well as in industrial applications. Particularly, with regard to the increasing use of high-power LED (HP-LED) the materials in the surrounding area of the light emitting semiconductor chip are of utmost importance. While the materials behind the semiconductor chip are optimized for maximum heat dissipation, the materials currently used for the encapsulation of the semiconductor chip (primary optics) and the secondary optics encounter their limits due to the high temperatures. In addition certain amounts of blue UV radiation degrade the currently used materials such as epoxy resins or polyurethanes for primary optics. In the context of an ongoing joint research project with various partners from the industry, an innovative manufacturing method for high precision optics for LED applications made of liquid silicone rubber (LSR) is analyzed at the Institut of Plastics Processing (IKV), Aachen. The aim of this project is to utilize the material-specific advantages of high transparent LSR, especially the excellent high temperature resistance and the great freedom in design. Therefore, a high integrated injection molding process is developed. For the production of combined LED primary and secondary optics a LED board is placed in an injection mold and overmolded with LSR. Due to the integrated process and the reduction of subcomponents like the secondary optics the economics of the production process can be improved significantly. Furthermore combined LED optics offer an improved effectiveness, because there are no losses of the light power at the transition of the primary and secondary optics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2009

Improved Starting Materials for Back-Illuminated Imagers

An improved type of starting materials for the fabrication of silicon-based imaging integrated circuits that include back-illuminated photodetectors has been conceived, and a process for making these starting materials is undergoing development. These materials are intended to enable reductions in dark currents and increases in quantum efficiencies, relative to those of comparable imagers made from prior silicon-on-insulator (SOI) starting materials. Some background information is prerequisite to a meaningful description of the improved starting materials and process. A prior SOI starting material, depicted in the upper part the figure, includes: a) A device layer on the front side, typically between 2 and 20 m thick, made of p-doped silicon (that is, silicon lightly doped with an electron acceptor, which is typically boron); b) A buried oxide (BOX) layer (that is, a buried layer of oxidized silicon) between 0.2 and 0.5 m thick; and c) A silicon handle layer (also known as a handle wafer) on the back side, between about 600 and 650 m thick. After fabrication of the imager circuitry in and on the device layer, the handle wafer is etched away, the BOX layer acting as an etch stop. In subsequent operation of the imager, light enters from the back, through the BOX layer. The advantages of back illumination over front illumination have been discussed in prior NASA Tech Briefs articles.

Pain, Bedabrata↗
DOE OSTI2019

Optical lithography

Optical lithography is a photon-based technique comprised of projecting an image into a photosensitive emulsion (photoresist) coated onto a substrate such as a silicon wafer. It is the most widely used lithography process in the high volume manufacturing of nano-electronics by the semiconductor industry. Optical lithography’s ubiquitous use is a direct result of its highly parallel nature allowing vast amounts of information to be transferred very rapidly. For example, a modern leading edge lithography tool produces 150-300-mm patterned wafers per hour with 40-nm two-dimensional pattern resolution, yielding a pixel throughput of approximately 1.8T pixels/s. Continual advances in optical lithography capabilities have enabled the computing revolution over the past 50 years.

Naulleau, P↗
DOE OSTI2023

Growth of carbon nanotube forests on flexible metal substrates: Advances, challenges, and applications

Owing to their remarkable properties and ordered architecture, vertically aligned CNT forests (VACNT) hold promises for countless applications ranging from energy storage to multifunctional fiber production. Over the last three decades, studies of carbon nanotube (CNT) growth have provided invaluable insight into the CNT nucleation and growth mechanism and enabled critical advancements in nanotechnology. Nevertheless, the ability to fully harness the exceptional VACNT properties in commercial devices is bottlenecked by compatibility of current CNT synthesis processes with large-scale manufacturing. Metal foil substrates present an economic alternative to traditional insulating substrates, like silicon or quartz, and are compatible with both roll-to-roll and automated, large-scale, batch processes. Compared to CNT growth on Si substrates, metal foils present additional challenges, such as increased roughness and reactivity at high temperatures. Nonetheless, many successful VACNT growths on conducting metal foils have been reported, which demonstrate the feasibility of metal substrate use for large-volume production of high-quality CNTs. Here, in this review, we discuss advancements in the field of VACNT growth on metal foil and specifically examine different choices for metal substrates, barrier and catalyst layers, deposition and growth methods, resulting CNT characteristics, and highlight a number of applications that benefit from CNT growth on metal substrates and transition to large-scale manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Controlling Valley-Specific Light Emission from Monolayer MoS 2 with Achiral Dielectric Metasurfaces

Excitons in two-dimensional transition metal dichalcogenides have a valley degree of freedom that can be optically manipulated for quantum information processing. Here, we integrate MoS 2 monolayers with achiral silicon disk array metasurfaces to enhance and control valley-specific absorption and emission. Through the coupling to the metasurface electric and magnetic Mie modes, the intensity and lifetime of the emission of neutral excitons, trions, and defect bound excitons can be enhanced and shortened, respectively, while the spectral shape can be modified. Additionally, the degree of polarization (DOP) of exciton and trion emission from the valley can be symmetrically enhanced at 100 K. The DOP increase is attributed to both the metasurface-enhanced chiral absorption of light and the metasurface-enhanced exciton emission from the Purcell effect. Finally, combining Si-compatible photonic design with large-scale 2D materials integration, our work makes an important step toward on-chip valleytronic applications approaching room-temperature operation.

2D materials↗
DOE OSTI2023

Programmable photonic integrated meshes for modular generation of optical entanglement links

Abstract Large-scale generation of quantum entanglement between individually controllable qubits is at the core of quantum computing, communications, and sensing. Modular architectures of remotely-connected quantum technologies have been proposed for a variety of physical qubits, with demonstrations reported in atomic and all-photonic systems. However, an open challenge in these architectures lies in constructing high-speed and high-fidelity reconfigurable photonic networks for optically-heralded entanglement among target qubits. Here we introduce a programmable photonic integrated circuit (PIC), realized in a piezo-actuated silicon nitride (SiN)-in-oxide CMOS-compatible process, that implements an N × N Mach–Zehnder mesh (MZM) capable of high-speed execution of linear optical transformations. The visible-spectrum photonic integrated mesh is programmed to generate optical connectivity on up to N = 8 inputs for a range of optically-heralded entanglement protocols. In particular, we experimentally demonstrated optical connections between 16 independent pairwise mode couplings through the MZM, with optical transformation fidelities averaging 0.991 ± 0.0063. The PIC’s reconfigurable optical connectivity suffices for the production of 8-qubit resource states as building blocks of larger topological cluster states for quantum computing. Our programmable PIC platform enables the fast and scalable optical switching technology necessary for network-based quantum information processors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Ultrahigh thermal conductivity of isotopically enriched silicon

Most of the stable elements possess two and more stable isotopes. The physical properties of materials composed of such elements depend on the isotopic abundance to some extent. A remarkably robust isotope effect is observed in the phonon thermal conductivity, the principal mechanism of heat conduction in nonmetallic crystals. An isotopic disorder due to random distribution of the isotopes in the crystal lattice sites results in a rather strong phonon scattering and, consequently, in a reduction of thermal conductivity. In this paper, we present new results of accurate and precise measurements of thermal conductivity κ( T ) for silicon single crystals having three different isotopic compositions at temperatures T from 2.4 to 420 K. The highly enriched crystal containing 99.995% of 28 Si, which is one of the most perfect crystals ever synthesized, demonstrates a thermal conductivity of about 450 ± 10 W cm -1 K -1 at 24 K, the highest measured value among bulk dielectrics, which is ten times greater than the one for its counterpart nat Si with the natural isotopic constitution. For highly enriched crystal 28 Si and crystal nat Si, the measurements were performed for two orientations [001] and [011], a magnitude of the phonon focusing effect on thermal conductivity was determined accurately at low temperatures. The anisotropy of thermal conductivity disappears above 31 K. The influence of the boundary scattering on thermal conductivity persists sizable up to much higher temperatures (~80 K). The κ( T ) measured in this work gives the most accurate approximation of the intrinsic thermal conductivity of single crystal silicon which is determined solely by the anharmonic phonon processes and diffusive boundary scattering over a wide temperature range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

In situ TEM study of the transitions between crystalline Si and nonstoichiometric amorphous oxide under bipolar voltage bias

The electrical responses, either structurally or chemically, at the interface between a SiO 2 thin film and a single crystalline Si substrate are an important research subject in Si-based devices. Dielectric breakdown-induced epitaxial migration of Si into SiO 2 has been reported as a degradation mechanism in field effect transistors (FETs). Here, we show a direct observation of electric field induced conversion of single crystalline Si to nonstoichiometric amorphous oxide starting from the Si/native oxide interface using in situ transmission electron microscopy (TEM). We further show that nanocrystalline Si can form in the amorphous oxide under a voltage bias of reversed polarity. Electron energy loss spectroscopy and energy dispersive X-ray spectroscopy analyses indicate that the observed amorphization process was caused by the oxidation of Si and the recrystallization process was caused by the reduction of nonstoichiometric amorphous silicon oxide. Furthermore, both transitions are a result of field-driven directional migration of oxygen which originally comes from its native oxide layer.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Lithium-Ion Battery Technologies for Electric Vehicles: Progress and challenges

Electric Vehicle (EV) sales and adoption have seen a significant growth in recent years, thanks to advancements and cost reduction in lithium-ion battery technology, attractive performance of EVs, governments' incentives, and the push to reduce greenhouse gases and pollutants. In this article, we will explore the progress in lithium-ion batteries and their future potential in terms of energy density, life, safety, and extreme fast charge. Here we will also discuss material sourcing, supply chain, and end-of-life-cycle management as they have become important considerations in the ecosystem of batteries for the sustained growth and adoption of EVs. With significant government and private sector investments in research and development, processing, and manufacturing and advances in anodes (lithium and silicon), cathodes (high nickel), designs, supply chain development, and the circularity of lithium-ion batteries, lithium-based batteries are on track to make EVs mainstream, addressing climate concerns of fossil-fueled vehicles.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2018

Photon-mediated interactions between quantum emitters in a diamond nanocavity

Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally-resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically-mediated interactions. Such controlled interactions will be crucial in developing cavity-mediated quantum gates between spin qubits and for realizing scalable quantum network nodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗