Design and Test Results for a High Efficiency, High Power Density, Low Output Ripple 1kV, 250kW Aerospace Motor Drive
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High Voltage↗
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Results for “low voltage”
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Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV
Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.
42 ENGINEERING↗
Plasma flow measurements in a simulated low earth orbit plasma
The employment of large, higher power solar arrays for space operation has been considered, taking into account a utilization of high operating voltages. In connection with the consideration of such arrays, attention must be given to the fact that the ambient environment of space contains a tenuous low energy plasma which can interact with the high voltage array causing power 'leakage' and arcing. An investigation has been conducted with the aim to simulate the behavior of such an array in low-earth-orbit (LEO). During the experiments, local concentrations of the 'leakage' current were observed when the panel was at a high voltage. These concentrations could overload or damage a small area of cells in a large string. It was hypothesized that this effect was produced by electrostatic focusing of the particles by the sheath fields. To verify this experimentally, an end-effect Langmuir probe was employed. The obtained results are discussed.
Gabriel, S. B.↗
Sensors with Intelligent Measurement Platform and Low-cost Equipment (SIMPLE) – Performance Characterization
Design and performance of a digital signal processing platform for enhancing off-the-shelf voltage and current sensors are presented. The platform was developed for enabling advanced distribution grid applications with existing low-cost sensors. This digital sensor system leverages a variety of off-the-shelf voltage and current sensing technologies, analog-to-digital conversion, and sensor correction algorithms to yield more accurate and reliable digital measurements that support a multitude of applications and use cases. Sample performance and accuracy results are provided, including measurements at power frequency and higher harmonics. The system extends the native performance of the medium voltage sensors used in the system, for example, broadening measurement bandwidth beyond a few kHz, appropriate for measuring switching surges and harmonics on medium voltage distribution systems. The digital sensor system is installed and characterized in the field with a high-bandwidth optical calibration system to determine site-dependent calibration and performance issues.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Thermally Stable, Piezoelectric and Pyroelectric Polymeric Substrates and Method Relating Thereto
Production of an electric voltage in response to mechanical excitation (piezoelectricity) or thermal excitation (pyroelectricity) requires a material to have a preferred dipole orientation in its structure. This preferred orientation or polarization occurs naturally in some crystals such as quartz and can be induced into some ceramic and polymeric materials by application of strong electric or mechanical fields. For some materials, a combination of mechanical and electrical orientation is necessary to completely polarize the material. The only commercially available piezoelectric polymer is poly(vinylidene fluoride) (PVF2). However, this polymer has material and process limitations which prohibit its use in numerous device applications where thermal stability is a requirement. By the present invention, thermally stable, piezoelectric and pyroelectric polymeric substrates were prepared from polymers having a softening temperature greater than 1000C. A metal electrode material is deposited onto the polymer substrate and several electrical leads are attached to it. The polymer substrate is heated in a low dielectric medium to enhance molecular mobility of the polymer chains. A voltage is then applied to the polymer substrate inducing polarization. The voltage is then maintained while the polymer substrate is cooled 'freezing in' the molecular orientation. The novelty of the invention resides in the process of preparing the piezoelectric and pyroelectric polymeric substrate. The nonobviousness of the invention is found in heating the polymeric substrate in a low dielectric medium while applying a voltage.
Simpson, Joycelyn O.↗
Uncertainty analysis of steady-state measurements with a hot-filament type calorimetric emissometer
Calorimetric emissometers measure total hemispherical emissivity by measuring the heat transferred from a heated sample to its surroundings under a vacuum. The accuracy of emissometers standardized by the ASTM C835-06 are well understood. This work uses the Guide to the Evaluation of Uncertainty in Measurement (GUM) for the propagation uncertainties for an ASTM compliant emissometer. The GUM method was able to develop a measurement model and expressions to determine the uncertainty for other emissometers of this type. Data on ‘as-received’ Hastelloy X was used to develop a detailed uncertainty analysis of the emissivity measurement. Data on ‘as-received’ SS 347 and sandblasted A387 Gr. 91 and previous data by the group on A508/A533B were used to determine uncertainty over the ranges 0.16 to 0.81. For all samples, relative uncertainties in emissivities varied from 0.77% to 2.5% when using a fluxgate magnetometer sensor (FMS) to measure the DC heating current. Data on Hastelloy X using a Hall-effect sensor for DC current and low alloy steel showed the DC current and voltage across the test section to be dominate sources of uncertainty. When these sources were reduced, the specimen temperature and the surface area of the test sections were main sources of uncertainty in the emissivity, especially at higher temperatures. As thermal expansion of the surface was considered in the calculations, correlation between specimen temperature and surface area was examined. It was found to be a small contribution to emissivity's uncertainty despite the differences in linear CTE and its uncertainty for the materials analyzed in this study. For low temperatures, the chamber temperature can be a significant source of uncertainty if not sufficiently cooled. The GUM was also briefly compared to uncertainty from the 2nd and 3rd expansions of the Taylor series. We found that the results were the same when rounding to two significant figures.
42 ENGINEERING↗
A new electric field effect in silicon solar cells.
The phenomenon of high-resistivity silicon solar cells manifesting high open-circuit voltages previously observed only for cells made from low-resistivity silicon is shown to be caused by the presence of a shallow diffused region at the back surface of the cell. The basic cell structure is either n+, p, p+ or p+, n, n+. The high open-circuit voltage arises from the injection and accumulation of excess majority carriers in the bulk upon illumination or application of forward bias to the structure. A working model for the cell, designated a back surface field (BSF) cell, is described, and recent developments are cited.
Mandelkorn, J.↗
Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate
The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.
42 ENGINEERING↗
The Impact of Different Substituents in Fluorinated Cyclic Carbonates in the Performance of High Voltage Lithium-Ion Battery Electrolyte
Ethylene carbonate (EC) has been used as the Solid-Electrolyte Interphase (SEI) former in the conventional electrolyte for decades. However, its low anodic stability leads to severe capacity decay during cycling under high voltage operation. Therefore, finding a viable electrolyte with high anodic stability and the ability to form robust SEI for high voltage lithium-ion batteries is of primary importance. In this study, a series of electrolytes containing various fluorinated cyclic carbonates as the SEI former have been designed, synthesized and evaluated. Linear sweep voltammetry study suggested that fluorinated cyclic carbonates generally possess higher anodic stability than EC. Based on the cycling performance of LiNi 0.5 Co 0.2 Mn 0.3 O 2 (NMC532)/ graphite full cells, the electrolyte with DFEC/FEMC (1.0 M LiPF 6 ) inhibited the oxidation side reaction on the cathode and forms a vigorous SEI on the anode. The high voltage NMC532/Graphite cell utilizing the novel electrolyte exhibits excellent cycling durability under both room and elevated temperature. The superior performance of the DFEC based electrolyte was further unveiled by SEM, EDAX and XRD. Both the anode and cathode of the full cell employing DFEC based electrolyte retained their intrinsic structures after cycling while the electrodes cycled in conventional electrolyte showed severe degradation.
25 ENERGY STORAGE↗
On the modes of nanosecond pulsed plasmas for combustion ignition of quiescent CH 4 -air mixtures
The effect of transient plasma modes on ignition kernel development are discussed here for a quiescent CH 4 -air combustion model system. A 10 ns high-voltage pulse was applied to a pin-to-pin electrode in lean fuel-air mixtures at room temperature and atmospheric pressure. High-impedance streamer, transient spark and low-impedance spark discharges were identified based on pulse waveforms of voltage and current. A sustained ignition kernel expansion was observed when the plasma discharge transitioned into a transient spark or spark discharge. The minimum ignition energy was obtained at the transient spark mode, which has less than a third of the energy or Coulomb transfer compared to the low-impedance spark. Employing repetitive 10-pulse sequence at 10 kHz, the lean-fuel limit was extended from an equivalence ratio of 0.6 for the single pulse ignition to 0.5. The use of repetitive pulses also allowed streamer breakdown or spark initiation to occur at a lower voltage.
CH 4↗
Anomalous Transients in Chip Polymer Tantalum Capacitors
Contrary to MnO2 tantalum capacitors, transient processes in polymer tantalum capacitors after voltage application might result in anomalously high, ampere-level currents when a capacitor might appear as a short circuit for a time that is much greater than a transient time in MnO2 capacitors. In this work, conditions that cause anomalous transients in different types of polymer tantalum capacitors have been analyzed. Related phenomena that included increasing of capacitance and dissipation factors with voltage, parametric surge current test failures without damage to capacitors, and increasing leakage currents at low temperatures are described. It has been shown that anomalous transients increased substantially with applied voltage and with reduction of moisture content in capacitors caused by storage or operation at high temperatures and/or in vacuum. Different types of capacitors exhibited different level of transients and modification of conductive polymers or process of their application might decrease transient leakage currents substantially. For space applications, the risk of failures related to anomalous transients can be mitigated by special testing procedures to select parts with an acceptable level of transients and by voltage derating.
Tantalum Capacitors↗
Evaluation of Elements used for Manufacturing of NanoLam Metallized Polymer Film Capacitors
Metallized polymer film capacitors (MPFC) manufactured by NanoLam technology have a better volumetric efficiency and performance that may exceed the reliability of conventional MPFCs typically used in power and high voltage systems that require high insulation resistance and low power losses. These capacitors can be also an effective replacement for electrolytic and stacked ceramic capacitors currently used in space applications looking to save significant volume and mass. This report evaluates the effects of environmental conditions including radiation and storage at room and high temperatures on the characteristics of NanoLam elements used in the production of MPFCs. Assessments of the reliability acceleration factors and predictions for the useful life are made based on highly accelerated life tests (HALT) using distributions of times to parametric failures at different stress conditions. It has been shown that even a relatively small amount of moisture absorbed at room environments in the dielectric layers may substantially change the probability of failure. In the presence of moisture, degradation processes that started after voltage application continue with time during storage.
Metallized polymer film capacitors (MPFC)↗
Low-temperature grapho-epitaxial La-substituted BiFeO 3 on metallic perovskite
Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO 3 thin films have typically been deposited at relatively high temperatures (650–800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO 3 at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb 0.75 Bi 0.25 O 3 electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO 3 , BaPb 0.75 Bi 0.25 O 3 , and SrTiO 3 (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO 3 . Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO 3 , where SrRuO 3 typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.
36 MATERIALS SCIENCE↗
Solvent–Diluent Engineering of Normal-Concentration Organosulfur Electrolytes for High-Voltage Lithium-Ion Batteries
Enabling high‑voltage batteries depends critically on rational electrolyte design. Conventional carbonate electrolytes with LiPF 6 suffer from insufficient oxidative stability, motivating the use of lithium bis(fluorosulfonyl)imide (LiFSI) for its superior high‑temperature and high‑voltage performance. However, LiFSI is relatively costly, and its electrolytes often require high concentrations to suppress aluminum current collector corrosion in cathode architectures and to adequately passivate electrode interfaces. Here, a low‑concentration LiFSI electrolyte is realized by combining a high‑voltage organosulfur solvent, ethyl methyl sulfone (EMS), with a non‑solvating fluorinated diluent, fluorobenzene (FB). Extended cycling of LiNi 0.8 Mn 0.1 Co 0.1 O 2 (NMC811) full cells to 4.5 V reveals substantial long‑term performance advantages over conventional carbonate electrolytes. Comparison with a popular cyclic sulfone, tetramethylene sulfone (TMS), shows that ring‑containing structures such as TMS strongly influence passivation behavior, ultimately limiting performance and narrowing the viable operating window. Overall, EMS is identified as a uniquely stable solvent for LiFSI‑based electrolytes operating at moderately high voltages.
Dato, Michael A. [Argonne National Laboratory (ANL↗
Soft Switching Over the Entire Line Cycle for a Quadruple Active Bridge DCX in a DC to Three-Phase AC Module
This paper is focused on a transformer-isolated quadruple active bridge (QAB) dc-dc converter loaded by three full-bridge dc-ac inverters. The QAB functions as a "DC trans-former" (DCX) in the dc-to-three-phase ac module. The QAB outputs provide time-varying power at twice the line frequency, which presents challenges in maintaining zero voltage switching (ZVS) on the secondary sides during low-power portions of the line cycle. It is shown how ZVS can be achieved in a phase, even at zero-power transfer, using a relatively small circulating current provided by the magnetizing inductance of the high-frequency transformer. The approach is particularly effective in high-voltage applications using SiC MOSFETs, where reductions in switching loss outweigh additional conduction losses due to the circulating currents. A detailed analysis of ZVS switching waveforms at the zero power transfer is presented, including effects of nonlinear device capacitances. Analytical expressions are given for the optimal values of the magnetizing inductance and dead times of the QAB primary and secondary bridges. The approach is verified by experimental results on a 600 V, 4 kW prototype, demonstrating greater than 98.5% efficiency from 1 kW to 4 kW, with a peak efficiency of 99.0%. Compared to conventionally operated prototype, a 54% reduction in total loss is achieved at rated power.
41 EE - Solar Energy Technologies Office (EE-4S)↗
ISS And Space Environment Interactions Without Operating Plasma Contactor
The International Space Station (ISS) will be the largest, highest power spacecraft placed in orbit. Because of this the design of the electrical power system diverged markedly from previous systems. The solar arrays will operate at 160 V and the power distribution voltage will be 120 V. The structure is grounded to the negative side of the solar arrays so under the right circumstances it is possible to drive the ISS potential very negative. A plasma contactor has been added to the ISS to provide control of the ISS structure potential relative to the ambient plasma. The ISS requirement is that the ISS structure not be greater than 40 V positive or negative of local plasma. What are the ramifications of operating large structures with such high voltage power systems? The application of a plasma contactor on ISS controls the potential between the structure and the local plasma, preventing degrading effects. It is conceivable that there can be situations where the plasma contactor might be non-functional. This might be due to lack of power, the need to turn it off during some of the build-up sequences, the loss of functionality for both plasma contactors before a replacement can be installed, similar circumstances. A study was undertaken to understand how important it is to have the contactor functioning and how long it might be off before unacceptable degradation to ISS could occur. The details of interaction effects on spacecraft have not been addressed until driven by design. This was true for ISS. If the structure is allowed to float highly negative impinging ions can sputter exposed conductors which can degrade the primary surface and also generate contamination due to the sputtered material. Arcing has been known to occur on solar arrays that float negative of the ambient plasma. This can also generate electromagnetic interference and voltage transients. Much of the ISS structure and pressure module surfaces exposed to space is anodized aluminum. The anodization thickness is very thin to provide the required solar absorptance and emittance. For conditions where ISS structure can charge negative a large percentage of the array voltage, the dielectric strength of this layer is low, and dielectric breakdown (arcing) can occur. The energy stored capacitively in the structure can be delivered to the arc. The mechanisms by which this energy is delivered and how much of the energy is available hasn't been fully quantified. Questions have been raised regarding the possibility of whether a sustained arc might result due to current collected by the solar arrays from local plasma. It was postulated that even if dielectric breakdown didn't occur, impacts due to micrometeoroids and space debris could penetrate thin layers of dielectric on ISS and initiate an arc due to the coupling provided by the dense local plasma produced by the impact. This was proven in experiments conducted jointly by MSFC and Auburn University. A target chamber with a simulated ionospheric plasma and a biased, anodized aluminum plate and a 1-microfarad capacitor was used. The plate was then impacted by 75-micron particles accelerated to orbital velocity. Arc discharges were sustained for higher voltages but a threshold appears below which no discharge was initiated. Most items without an exposed power system will float electrically near the local plasma potential. This is true of the Space Shuttle, an Astronaut on EVA, and similar items. The structure of ISS might be at a large negative voltage. Therefore, capacitively stored energy can be transferred during docking, installing external boxes and equipment and Astronaut contact with ISS structure. The circumstances of when this can happen and the resulting effects are evaluated in this study. Also, a crewmember on EVA might be in the vicinity of an arc. All safety aspects of such an encounter including charging, molten particles from the arc site and EMI have been evaluated. This paper will report on the total results of this study focussed on the 4A configuration, scheduled to be complete in November, 2000. Interactions such as arcing, debris induced arcs, sustained arcs, sputtering, contamination from sputtering and arcing, docking interactions and Astronaut safety issues will all be addressed.
Carruth, M. R., Jr.↗
Characterization of Spurious Charge in SENSEI Skipper-CCDs
Skipper Charge-Coupled Devices (Skipper-CCDs) are a leading technology in the search for sub-GeV dark matter and coherent elastic neutrino-nucleus scattering. A key background for rare-event searches with these detectors arises from "spurious charge" -- single-electron events generated when charges are transferred through the active region to the serial register, and across the serial register to the readout stage. We present a characterization of spurious charge in both the active region and the serial register of SENSEI Skipper-CCDs, and show that, in a well-shielded low-background environment, the dominant contribution originates in the serial register during Skipper readout, when horizontal clocks are held at constant voltage between pixel transfers. Motivated by this finding, we develop a "tri-level" clocking scheme in which the held-low phase is raised to an intermediate voltage during readout to suppress trap-mediated charge generation. Using the SENSEI detector near the MINOS cavern, we measure a serial-register single-electron density of $(2.9 \pm 0.1) \times 10^{-5}$ electrons/pixel/image under standard SENSEI readout conditions, reduced to $(4.0 \pm 0.4) \times 10^{-6}$ electrons/pixel/image with tri-level clocking -- a factor of $\sim$7 improvement. This technique offers a promising path to lower backgrounds in current and future Skipper-CCD experiments.
Wu, Yikai [YITP, Stony Brook; SUNY, Stony Brook]↗
Low-insertion-resistance current monitor
Circuit automatically corrects for drifting offset voltage, providing long-term stability for current-monitoring instruments. Circuit is stable over wide temperature range; therefore, no compensation for temperature variations is necessary. Besides consuming little power, circuit introduces negligible noise on monitored lines and responds linearly to monitored circuit.
Paulkovich, J.↗