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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,369 records · Page 76
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Nucleation of Grain Boundary Phases

Here, we derive a theory that describes homogeneous nucleation of grain boundary (GB) phases. Our analysis takes account of the energy resulting from the GB phase junction, the line defect separating two different GB structures, which is necessarily a dislocation as well as an elastic line force due to the jump in GB stresses. The theory provides analytic forms for the elastic interactions and the core energy of the GB phase junction that, along with the change in GB energy, determines the nucleation barrier. We apply the resulting nucleation model to simulations of GB phase transformations in tungsten. Our theory explains why under certain conditions GBs cannot spontaneously change their structure even to a lower energy state.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Quasiparticle Poisoning of Superconducting Qubits from Resonant Absorption of Pair-Breaking Photons

The ideal superconductor provides a pristine environment for the delicate states of a quantum computer: because there is an energy gap to excitations, there are no spurious modes with which the qubits can interact, causing irreversible decay of the quantum state. As a practical matter, however, there exists a high density of excitations out of the superconducting ground state even at ultralow temperature; these are known as quasiparticles. Observed quasiparticle densities are of order 1 μ m - 3 , tens of orders of magnitude greater than the equilibrium density expected from theory. Nonequilibrium quasiparticles extract energy from the qubit mode and can induce dephasing. Here we show that a dominant mechanism for quasiparticle poisoning is direct absorption of high-energy photons at the qubit junction. We use a Josephson junction-based photon source to controllably dose qubit circuits with millimeter-wave radiation, and we use an interferometric quantum gate sequence to reconstruct the charge parity of the qubit. We find that the structure of the qubit itself acts as a resonant antenna for millimeter-wave radiation, providing an efficient path for photons to generate quasiparticles. A deep understanding of this physics will pave the way to realization of next-generation superconducting qubits that are robust against quasiparticle poisoning.

Liu, Chuan-Hong↗
DOE OSTI2024

Phase Pattern Formation in Grain Boundaries

Here, in this Letter, we derive conditions that predict the existence of two-phase periodic-pattern grain boundary structures that are stable against coarsening. While previous research has established that elastic effects can lead to phase pattern formation on crystal surfaces, the possibility of stable grain boundary structures composed of alternating grain boundary phases has not been previously analyzed. Our theory identifies the specific combination of grain boundary and materials properties that enable the emergence of patterned grain boundary states and shows that the dislocation content of grain boundary phase junctions, absent in surface phenomena, weakens the stability of the patterned structures. The predictions of the theory are tested using a model copper grain boundary that exhibits multiple phases and two-phase pattern formation. We discuss how, similarly to surfaces, elastic effects associated with grain boundary phase junctions have profound implications for how grain boundary phases transform.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Real Space Imaging of Field-Driven Decision-Making in Nanomagnetic Galton Boards

A possible spintronic route to hardware implementation for decision-making involves injecting a domain wall into a bifurcated magnetic nanostrip resembling a Y-shaped junction. A decision is made when the domain wall chooses a particular path through the bifurcation. Recently, it was shown that a structure like a nanomagnetic Galton board, which is essentially an array of interconnected Y-shaped junctions, produces outcomes that are stochastic and therefore relevant to artificial neural networks. However, the exact mechanism leading to the robust nature of randomness is unknown. Here, in this study, we directly image the decision-making process in nanomagnetic Galton boards using Lorentz transmission electron microscopy. We identify that the stochasticity in nanomagnetic Galton boards arises as a culmination of (1) the topology of the injected domain wall, (2) dissimilarly sized vertices, and (3) the strength of the applied field. Our results pave the way to a detailed understanding of stochasticity in nanomagnetic networks.

lorentz microscopy↗
DOE OSTI2022

Demand Driven Energy Management for PIPO Auxiliary Power Supply Architecture

In this paper, a demand driven energy management (DDEM) technique is implemented on modular parallel input parallel output DC/DC auxiliary power supply (APS) structure. In this method, modules are brought in/out of the operation making them operate under high loading conditions, avoiding low efficiency under light load. Such a method finds its application in power conservative systems with variable load. Implementation of DDEM and the energy saved is shown using APS comprised of two 15W commercially off-the-shelf DC-DC modules, with 100–1000 VDC input and 24 V output voltage. Along with the DDEM, the lifetime of the power stage devices is controlled minimizing their junction temperature swing through control of cooling system. This control method uses digital twin as interface to virtualize the power devices loading operation/ health condition. Accordingly, no extra sensor or closed loop control required to measure the junction temperature of the devices or feedback the losses to the cooling flow.

Azadeh, Yalda↗
DOE OSTI2024

Optimization of Structurally Enhanced Solder Transient Liquid Phase Bonding

High temperature packaging technologies are a necessity for high temperature capable devices. SAC305 solder has an operational limit of 174°C imposed by creep effects which aligns well with current junction temperature limits of 175°C. Wide band gap semiconductor materials have the potential to reach junction temperatures of up to 800°C that are not currently attainable with significant reliability. Capitalizing on this potential will requires substrates and attachments that can operate well beyond the current 175°C standard. Silver sintering pastes have received widespread interest as a high temperature attachment alternative. However, the process requires high pressure bonding in an inert environment to achieve acceptable bond quality. Transient liquid phase (TLP) sintering is capable of good bond quality without pressure requirements but suffers from low thermal conductivity and only slightly reduced cost compared to silver sintering. SAC305 solder contains the same constituent materials for TLP as available copper-tin TLP sintering paste. By introducing engineered surface structures into the bond, intermetallic formation can be accelerated producing a bond similar to TLP sintering but in an ambient environment and for reduced cost. While this process has been demonstrated, it has not yet been optimized. Currently bonds are formed using a 75 μm stencil on substrate surface structures 24 μm tall, covering 19% of the bonding area. The process takes about 4 hours not including the formation of surface structures. Here, this study will center on the effects of stencil thickness and coating methods. Samples will be analyzed by scanning acoustic microscopy, die shear testing and cross sectional scanning acoustic microscopy.

42 ENGINEERING↗
DOE OSTI2020

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗
DOE OSTI2019

Reverse Heterojunction (Al)GaInP Solar Cells for Improved Efficiency at Concentration

Mitigating series resistance is crucial to the efficiency of concentrator solar cells at high current density. Conventional AlGaInP junction designs for the top junction of III-V multijunction cells present a challenging tradeoff between series resistance on the one hand and current collection and voltage on the other hand. In this article we discuss the physics of a reverse heterojunction solar cell that aims to improve on this tradeoff by combining a high bandgap Al 0.18 Ga 0.33 In 0.49 P base and a lower bandgap (Al)GaInP emitter. The high mobility of the emitter leads to a relatively low series resistance, compared with a high bandgap homojunction cell. Furthermore, the electroluminescence spectrum shows emission peaks from both the emitter and base, leading to an open-circuit voltage that is not strictly dominated by either layer. The reverse heterojunction design is increasingly beneficial as the one-sun voltage increases.

14 SOLAR ENERGY↗
DOE OSTI2023

Impact of Irradiation-Induced Filter Heating on Calibration of NIR-Longpass-Filtered Reference Solar Cells

Reference solar cells play a crucial role in determining the performance of photovoltaic (PV) devices. In the performance calibration chain of mainstream single-junction PV technologies, common reference cell types include Si, KG-filtered Si, and GaAs cells. For emerging multijunction (MJ) PV technologies, such as CdTe/Si and perovskite/Si, Si reference cells with colored glass near-infrared-longpass (LP) filters like Schott RG-715 and 850 glass have been proposed. They offer a better spectral response that matches the bottom junctions of the emerging MJs, which could lead to lower uncertainties in performance measurements. However, this article reveals a prominent decrease in short-circuit current (ISC) during National Renewable Energy Laboratory's primary calibration over the course of minutes when using this type of LP-filtered reference cell, which could result in unacceptable measurement errors. Unlike quartz or KG filter glasses, LP colored glass filters demonstrate temperature-sensitive cut-on wavelength. When incident irradiance reaches these LP-filtered reference cells, the increased temperature due to light absorption causes a shift of the cut-on to longer wavelength. As a result, the device I SC exhibits a continuous decrease (approximately a 2.5% drop with RG850 LP filter in a 5-min duration) even when the device temperature is controlled at 25 degrees C. To address the temperature gradient issue between colored glass LP filter and the reference cell, we propose the direct integration of thin-film LP semiconductor layer on reference cells. This type of LP-filter-integrated cell has shown minimal temperature-related I SC variation and can serve as a more reliable reference cell source for accurate performance measurements.

14 SOLAR ENERGY↗
DOE OSTI2026

15.3% AM1.5G Efficiency GaAs Solar Cells Fabricated via an Epitaxy-Free Process

Here, we report simple and potentially low-cost techniques for creating high-quality n-type gallium arsenide (GaAs) and GaAs p/n junctions and fabricate GaAs p/n junction solar cells. Detailed-balance modeling suggests that 20% AM1.5G efficiency p/n homojunction devices may be possible if the surface doping concentration can be limited to values less than ∼ 5 × 10 19 cm −3 . Our process exploits an open-tube, vapor-phase, deposition-free, zinc diffusion technique for forming p-type layers in melt-grown n-GaAs substrates that results in sheet resistances less than 1 kΩ/$\square$. In addition, we have improved the minority carrier diffusion lengths of melt-grown GaAs from less than one micron to over five microns using an open-tube, vacuum-free, annealing process which reduces the density of EL2 midgap defects. Finally, we have combined these advances to fabricate epitaxy-free, GaAs solar cells with a validated AM1.5G efficiency of 15.3%.

14 SOLAR ENERGY↗
DOE OSTI2020

Effects of Reactive Power on Photovoltaic Inverter Reliability and Lifetime

This paper performs research on predicting Photovoltaic (PV) inverters reliability and lifetime based on thermal cycling. Thermal cycling is considered the most important stressors in an inverter system. In order to achieve this, a detailed electro-thermal model of the PV inverter will be developed along with their controllers capable of providing voltage support through reactive power. An in-house inverter was built, and a PV inverter model was developed to match the physical inverter. The PV inverter electrothermal model was validated for different ambient temperatures to match the in-house inverter hardware. The in-house inverter was placed inside a thermal chamber to emulate different ambient temperatures and their losses and temperature rises within the system were measured. After the validation of the model, a reduced order model of the inverter will be implemented to translate the mission profile of ambient temperature and solar irradiance into load profile of junction temperatures of the switches. The junction temperature data will be used to identify the reliability indices and hence predict the useful lifetime of the inverter system. Along with the model to predict useful lifetime of the system, the impact of reactive power on the overall reliability of the system will be studied. The key observation in this paper shows that lifetime of the inverter decreases as the operating power factor moves away from unity.

14 SOLAR ENERGY↗
DOE OSTI2020

Enabling Ultrathin III-V Solar Cells Using Dual Photonic Crystals

III-V materials provide the highest efficiencies, but the higher cost of these materials compared to other alternatives such as silicon has limited their applications. One way of reducing the costs is by minimizing the amount of material needed. In this work, using optical simulations we test light trapping layers in the front and in the back of a GaAs single junction solar cell. By using these layers, we predict that we can obtain near optically thick GaAs single junctions with only 300 nm active material, with maximum calculated J sc of 28.7 mA/cm 2 under the radiative limit.

14 SOLAR ENERGY↗
DOE OSTI2021

Mapping Current Collection in Cross Section: The Case of Copper-Doped CdTe Solar Cells

For decades, copper has been used to improve the performance of cadmium telluride thin film solar cells. However, it has also been shown to be the main cause of metastability in CdTe. Recently a low activation energy has been reported for the thermal diffusion of Cu in CdTe explaining the ease of motion that it has under moderate temperatures. The community consensus is that copper segregates to the absorber grain boundaries, where it's either beneficial or detrimental to device performance depending on its concentration. Using nanoscale X-ray micrsocopy and a two-dimensional drift-diffusion model we present a preliminary correlation between local copper distribution and electrical performance of a single-junction CdTe/CdS solar cell.

CdTe↗
DOE OSTI2020

Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.

42 ENGINEERING↗
DOE OSTI2022

Exploring the Basic Physical Mechanisms of Cathode- and Anode-Initiated High-Voltage Surface Flashover

Surface flashover in vacuum imposes a substantial physical limit on modern, large-scale pulsed power. One of the ramifications is a minimum size requirement for new machines, which in itself becomes a hard barrier to the modernization and improvement of existing infrastructure. Pulsed power topologies require the physical mechanisms of both anode- and cathode-initiated flashover to be considered. Originally, the geometrical implications of field emission at the cathode triple junction (CTJ) motivated the usage of configurations that avoid electrons impinging on the insulating material. This will largely suppress the cathode-initiated flashover, which is best described by the secondary electron avalanche mechanism, gas desorption, and final breakdown in the desorbed gas. It depends on the cascade growth of a conducting plasma along the length of the insulator from the cathode. Mitigating the cathode-initiated flashover typically comes at the cost of a significant field enhancement at the anode triple junction (ATJ). In a typical implementation, the anode field may be three times higher than the cathode field for a given voltage, making the corresponding anode-initiated flashover much more common than otherwise. In the case of pulsed, anode-initiated flashover, experimental evidence suggests that charge is directly extracted from the insulator resulting in the insulator taking on a net positive charge advancing the anode potential. Furthermore, along with accompanying gas desorption from the surface, the potential will then propagate from the anode toward the cathode until the effective length of the gap is sufficiently reduced to support flashover. The underlying physical mechanisms of cathode- and anode-directed flashover are discussed in light of previously gathered experimental data and recent experiments with pulsed, high-gradient, anode-initiated flashover.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Ultrastructure of the Endoplasmic Reticulum in Eukaryotic Microalgae

ABSTRACT The endoplasmic reticulum (ER) is a large and highly dynamic component of the eukaryotic endomembrane system. In eukaryotic microalgae, it plays six distinct roles: (1) It envelopes the chromatin to form thenucleus. (2) It forms cisternae in the cytoplasm, some of which scaffold the synthesis of proteins destined for incorporation into membranes or for secretion. (3) It associates withGolgicisternae to scaffold the synthesis of glycosylated proteins. (4) It associates with theplasma membraneto mediate the synthesis and secretion of hydrophobic molecules. (5) It mediates the synthesis of cytoplasmiclipid bodies. (6) In lineages harboring complex plastids of red algal ancestry, it forms thechloroplast ER, which envelops the primary chloroplast envelope. In this review, these systems are illustrated using the quick‐freeze deep‐etch electron microscopy (QFDEEM) technique, which lifts up the topological configurations adopted by this gossamer system. A key finding is that in all the complex microalgae examined except dinoflagellates, the inner nuclear envelope membrane associates directly with the plastid‐contiguous membrane of the chloroplast ER at foci designated as chloroplast‐nuclear junctions. These junctions may play a role in regulating the maintenance and physiology of the complex organelles.

Microbiology↗
DOE OSTI2025

Constitutive down‐regulation of liguleless alleles in sorghum drives increased productivity and water use efficiency

Plant architecture influences the microenvironment throughout the canopy layer. Plants with a more erect leaf architecture allow for an increase in planting densities and allow more light to reach lower canopy leaves. This is predicted to increase crop carbon assimilation. Frictional resistance to wind reduces air movement in the lower canopy, resulting in higher humidity. By increasing the proportion of canopy photosynthesis in the more humid lower canopy, gains in the efficiency of water use might be expected, although this may be slightly offset by the more open erectophile form canopy. An anatomical feature in members of the Poaceae family that impacts leaf angle is the articulated junction of the sheath and blade, which also bares the ligule and auricles. Mutants, which lack ligules and auricles, show no articulation at this junction, resulting in leaves that are near vertical. In maize, these phenotypes termed liguleless result from null mutations of genes: ZmLG1 (Zm00001eb67740) and ZmLG2 (Zm00001eb147220). In sorghum, SbiRTx430.06G264300 (SbLG1) and SbiRTx430.03G392300 (SbLG2) are annotated as the respective maize homologues. A hair-pin element designed to down-regulate both SbLG1 and SbLG2 was introduced into the grain sorghum genotype RTx430. Derived transgenic events harbouring the hair-pin failed to develop ligules and displayed reduced leaf angles to the vertical, but less vertical than in null mutations. Under field settings, plots sown with these sorghum events having an erect architecture phenotype displayed an increase in photosynthesis in lower canopy levels, which led to increases in above-ground biomass and seed yield, without an increase in water use.

59 BASIC BIOLOGICAL SCIENCES↗