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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,369 records · Page 76
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Spiral growth of topological insulator Sb{sub 2}Te{sub 3} nanoplates

Sb{sub 2}Te{sub 3} nanoplates synthesized by vapor phase deposition method have been systemically investigated employing atomic force microscopy, which exhibit regular spiral structures on the surface. The height of spiral steps is determined to be 1 nm corresponding to one quintuple layer, with an inter-step separation ranging from 500 nm to 1 {mu}m. Growth mechanism of spiral structures on the Sb{sub 2}Te{sub 3} nanoplate surface is elucidated, which can be applied to other layered materials with van der Waals epitaxy growth. The electrostatic properties of Sb{sub 2}Te{sub 3} nanoplates with spiral structures are also simultaneously characterized.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE

The surface roughness and defect density of GaN epitaxial layers grown on c-plane sapphire substrate are investigated and found to be dependent on nitridation temperature. GaN epitaxial layers grown after nitridation of sapphire at 200°C have a higher defect density and higher surface roughness compared to the GaN layers grown at 646°C nitridation as confirmed by atomic force microscopy (AFM). The persistent photoconductivity (PPC) was observed in both samples and it was found to be decreasing with decreasing temperature in the range 150-300°C due to long carrier lifetime and high electron mobility at low temperature. The photoresponse of the GaN films grown in this study exhibit improved PPC due to their better surface morphology at 646°C nitrided sample. The point defects or extended microstructure defects limits the photocarrier lifetime and electron mobility at 200°C nitrided sample.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2010

Fabrication of one-dimensional photonic crystals by photoelectrochemical etching of silicon

The conditions of formation of deep periodic trenches by photoelectrochemical etching of n-Si (100) with linear seeds on the surface are analyzed. Criteria for the proper choice of the period of seed grooves and the etching current density in relation to the doping level of the substrate are formulated. Corrugation of walls is a characteristic feature of the obtained structures; this corrugation is caused by traces of merged macropores. Atomic-force microscopy is used to study roughness of the side-walls in relation to the etching conditions; the current density at which one can obtain the smoothest side-walls is determined. The roughness of the side walls in structures with periods of 7 and 9 {mu}m on Si with the resistivity of 15 {Omega} cm amounts to {approx}40 nm. It is shown that additional treatment of the structures in alkaline solutions can decrease the side-wall roughness by approximately a factor of 2.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Study and characterization of the irreversible transformation of electrically stressed planar Ti/TiO{sub x}/Ti junctions

We investigate the properties and characteristics of planar Ti/TiO{sub x}/Ti junctions, which consist of transverse TiO{sub x} lines drawn on Ti test patterns. Junctions are elaborated by means of local anodic oxidation using atomic force microscopy. An irreversible morphological transformation occurring in a reproducible manner is observed when these planar junctions are electrically stressed under ambient atmosphere. Structural and chemical analyses based on transmission electron microscopy techniques reveal the extension of the initial amorphous TiO{sub x} into a crystalline rutile phase. This irreversible transformation is proven to vanish completely if the electrical stress occurs under vacuum atmosphere. Finally, we carry out temperature dependent electrical measurements in order to elucidate their conduction mechanism: Schottky emission above an ultra-low potential barrier is assumed to dominate under vacuum atmosphere whereas ionic conduction seems to prevail in air.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Co doping effect on structural and optical properties of nickel oxide (NiO) thin films via spray pyrolysis

Undoped and cobalt doped nickel oxide thin films (Co:NiO) at different doping concentrations were deposited on a glass substrate at constant substrate temperature by spray pyrolysis. The doping percentage increased from 0 to 10% and the effects of doping content on structural, morphological and optical properties were explored by X-ray diffraction, atomic force microscopy and UV–visible spectroscopy, respectively. X-ray diffraction configurations proved the NiO thin films were polycrystalline in nature having a cubic crystal structure. The regularly used parameters such as crystallite size, micro-strain, dislocation density and texture coefficient are presented from structural data. The average crystallite size is found between 10 and 14 nm with cobalt doping (Co) concentration. The band gap energies were increased with the effect of Co doping concentration in the range between 2.10 and 2.50 eV. The various optical constants as a function of photon energy are modified with Co doping concentration.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

In situ atomic force microscope study of high-temperature untwinning surface relief in Mn-Fe-Cu antiferromagnetic shape memory alloy

The N-type untwinning surface relief associated with the fcc {r_reversible} fct martensitic transformation (MT) was observed in the Mn{sub 81.5}Fe{sub 14.0}Cu{sub 4.5} antiferromagnetic high-temperature shape memory alloy (SMA) by in situ atomic force microscopy. The measured untwinning relief angles ({theta}{sub {alpha}} Double-Vertical-Line {theta}{sub {beta}}) at the ridge and at the valley were different, and both angles were less than the conventional values. The surface relief exhibited good reversibility during heating and cooling because of the crystallographic reversibility of thermal-elastic SMAs. Untwinning shear was proposed as the main mechanism of the N-type surface relief. The order of the reverse MT was discussed based on the experimental measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Structural and optical properties of Ag-doped copper oxide thin films on polyethylene napthalate substrate prepared by low temperature microwave annealing

Silver doped cupric oxide thin films are prepared on polyethylene naphthalate (flexible polymer) substrates. Thin films Ag-doped CuO are deposited on the substrate by co-sputtering followed by microwave assisted oxidation of the metal films. The low temperature tolerance of the polymer substrates led to the search for innovative low temperature processing techniques. Cupric oxide is a p-type semiconductor with an indirect band gap and is used as selective absorption layer solar cells. X-ray diffraction identifies the CuO phases. Rutherford backscattering spectrometry measurements confirm the stoichiometry of each copper oxide formed. The surface morphology is determined by atomic force microscopy. The microstructural properties such as crystallite size and the microstrain for (-111) and (111) planes are calculated and discussed. Incorporation of Ag led to the lowering of band gap in CuO. Consequently, it is determined that Ag addition has a strong effect on the structural, morphological, surface, and optical properties of CuO grown on flexible substrates by microwave annealing. Tauc's plot is used to determine the optical band gap of CuO and Ag doped CuO films. The values of the indirect and direct band gap for CuO are found to be 2.02 eV and 3.19 eV, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Structural change upon annealing of amorphous GeSbTe grown on Si(111)

The structural change upon annealing of an amorphous GeSbTe (GST) film deposited by molecular beam epitaxy on a Si(111) substrate is studied by means of X-ray diffraction (XRD), X-ray reflectivity (XRR), and atomic force microscopy (AFM). XRD profiles reveal that both metastable cubic and stable hexagonal phases are obtained with a single out-of-plane orientation. XRR study shows a density increase and consequent thickness decrease upon annealing, in accordance with literature. From both, the XRD and the AFM study, it emerges that the crystalline substrate acts as a template for the film, favoring the crystallization of the amorphous GST into the [111] oriented metastable cubic phase, and the latter turns into the [0001] stable hexagonal phase for higher annealing temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Characterization of the insulator barrier and the superconducting transition temperature in GdBa{sub 2}Cu{sub 3}O{sub 7−δ}/BaTiO{sub 3} bilayers for application in tunnel junctions

The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO{sub 3} tunnel barrier deposited on a 16 nm thick GdBa{sub 2}Cu{sub 3}O{sub 7−δ} thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO{sub 3} barrier thickness between 1.6 and 4 nm. The BaTiO{sub 3} layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the applied voltage). The GdBa{sub 2}Cu{sub 3}O{sub 7−δ} electrode is totally covered by a BaTiO{sub 3} thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO{sub 3} top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO{sub 3} thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa{sub 2}Cu{sub 3}O{sub 7−δ}. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO{sub 3} barrier)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Optoelectronic properties of p-diamond/n-GaN nanowire heterojunctions

In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Etching of germanium-tin using ammonia peroxide mixture

The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Thermal treatment effects on charge storage performance of graphene-based materials for supercapacitors

Graphene materials were synthesized by reduction of exfoliated graphene oxide sheets by hydrazine hydrate and then thermally treated in nitrogen to improve the surface area and their electrochemical performance as electrical double-layer capacitor electrodes. The structural and surface properties of the prepared reduced graphite oxide (RGO) were investigated using atomic force microscopy, scanning electron microscopy, Raman spectra, X-ray diffraction, and nitrogen adsorption / desorption. RGO forms a continuous network of crumpled sheets, which consist of numerous few-layer and single-layer graphenes. Electrochemical studies were conducted by cyclic voltammetry, impedance spectroscopy, and galvanostatic charge-discharge measurements. The modified RGO materials showed enhanced electrochemical performance, with maximum specific capacitance of 96 F/g, energy density of 12.8 Wh/kg, and power density of 160 kW/kg. The results demonstrate that thermal treatment of RGO at selected conditions is a convenient and efficient method for improving specific capacitance, energy, and power density.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Two-dimensional electron gas at the Ti-diffused BiFeO{sub 3}/SrTiO{sub 3} interface

Oxide heterostructures with the broken translational symmetry often trigger a two-dimensional quantum confinement and associated unique electronic properties that cannot be observed in bulk constituents. Particular interest is devoted to the formation of two-dimensional electron gas (2DEG) at heterointerfaces between two insulators, which offers a fertile ground for fabricating advanced electronic devices. Here, we combine atomic force microscopy, transmission electron microscopy, and atomistic first-principles calculations to demonstrate that the (100) BiFeO{sub 3}/SrTiO{sub 3} interface takes on a metallic nature and a 2DEG is generated at this interface. Our findings also reveal that the electronic reconstruction due to the polar discontinuity and the variation in valence state of Ti arising from diffusion of Ti cations in SrTiO{sub 3} to Fe sites of BiFeO{sub 3} are critical to the formation of 2DEG at the heterointerface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2011

High temperature step-flow growth of gallium phosphide by molecular beam epitaxy and metalorganic chemical vapor deposition

Post-growth surface morphologies of high-temperature homoepitaxial GaP films grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) have been studied. Smooth, stepped surface morphologies of MBE-grown layers, measured by atomic force microscopy, were found for a wide range of substrate temperatures and P{sub 2}:Ga flux ratios. A MOCVD-based growth study performed under similar conditions to MBE-grown samples shows a nearly identical smooth, step-flow surface morphology, presenting a convergence of growth conditions for the two different methods. The additional understanding of GaP epitaxy gained from this study will impact its use in applications that include GaP-based device technologies, III-V metamorphic buffers, and III-V materials integration with silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Silver nano particle formation on Ar plasma - treated cinnamyl alcohol

Metastable induced electron spectroscopy, ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy are employed to study the adsorption of silver on cinnamyl alcohol films prepared on Au(111) substrates by thermal evaporation. Additionally, the impact of an Ar atmosphere dielectric barrier discharge plasma applied to the cinnamyl alcohol film preliminary to the Ag adsorption is investigated. In both cases silver nano particles with an average diameter of 9 nm are formed. These particles do not interact chemically with the underlying cinnamyl alcohol film. We do not find any influence of the preliminary Ar plasma-treatment on the adsorption behavior at all.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E{sub 1}(TO) and E{sub 2}{sup 2} phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E{sub 1}(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E{sub 2}{sup 2} peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗