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At least 1,369 records · Page 76
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Crystal structures and formation mechanisms of boron-rich tungsten borides

Boron-rich tungsten borides tend to adopt mechanically unfavorable layered structures but experimentally exhibit excellent mechanical properties rivalling traditional superhard solids. Unravelling the contraindicated structure-property relationship, however, has been impeded by their structural ambiguities because of the difficulty in probing boron and atomic deficiency of these borides. Here, we study crystal structures of boron-rich tungsten borides WB 3+x and WB 2+x by neutron diffraction based on high-quality samples prepared by a high-pressure method, leading to definitive structural resolutions for both borides with unique compositions of WB 5.14 and WB 2.34 . Combined with theoretical calculations, their structural stability is revealed to be closely related to atomic deficiency, which is governed by the valence-band filling with an optimal valence-electron concentration of ~10 per cell. The presence of interstitial boron trimers at the vacant W : 2b sites in WB 5.14 alters the crystal symmetry, making the Wyckoff 2d site more favorably occupied by W, rather than the 2c site, as previously misassigned. Here, the staggered planar boron layers and wrinkled boron bonding in WB 2.34 are identified to be crucial for stabilizing its structure. These findings unveil the longstanding structural mysteries of boron-rich tungsten borides and offer powerful insights for rational design of borides by defect chemistry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Chemically and electrically tunable spin polarization in ferroelectric Cd-based hybrid organic-inorganic perovskites

Density functional theory computations are used to predict the electronic structure of Cd-based hybrid organic-inorganic high-T C ferroelectric perovskites with TMCM-CdCl 3 being one representative. Here we report Rashba-Dresselhaus spin splitting in the valence band of these nonmagnetic compounds. Interestingly, we find in computations that the splitting is not necessarily sensitive to the polarization of the material but to the organic molecule itself which opens a way to its chemical tunability through the choice of the molecule. Further chemical tunability of spin splitting is shown to be possible through a substitution of Cl in the CdCl 3 chains as the valence band was found to originate from Cl-Cl weekly bonding orbitals. For example, the substitution of Cl with Br in TMCM-CdCl 3 resulted in a ten times increase of spin splitting. Furthermore, the spin polarization in these materials gives origin to persistent spin textures which are coupled to the polarization direction, and, therefore, can be controlled by the electric field. This is promising for spintronics applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ferrimagnetic spin waves in honeycomb and triangular layers of Mn{sub 3}Si{sub 2}Te{sub 6}.

A detailed analysis of the ferrimagnetic ground state of Mn 3 Si 2 Te 6 has been performed using inelastic neutron scattering. Although the proposed valence of the nominal Mn 2+ ions would have quenched orbital angular momentum, a significant exchange anisotropy exists in Mn 3 Si 2 Te 6 . This apparent exchange anisotropy is a manifestation of a weak spin-orbit coupling in the layered material. We employ a detailed simulation of the spin-wave spectrum coupling traditional refinement of dispersion parameters to image analysis techniques, while including Monte Carlo simulations of the instrumental resolution to accurately identify the exchange couplings to the third nearest neighbor. An independent validation of our results is made by comparing our final Hamiltonian to heat capacity measurements.

Sala, G.↗
DOE OSTI2023

Topological band inversion in HgTe(001): Surface and bulk signatures from photoemission

HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular, due to coupling of the Te $5p$-derived valence electrons to Hg $5d$ core states at shallow binding energy. Here, we present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron spectroscopy and density functional theory. The results establish detailed agreement in terms of: (i) electronic band dispersions and orbital symmetries, (ii) surface and bulk contributions to the electronic structure, and (iii) the importance of Hg $5d$ states in the valence-band formation. Supported by theory, our experiments directly image the paradigmatic band inversion in HgTe, underlying its nontrivial band topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Direct experimental evidence of tunable charge transfer at the LaNiO 3 / CaMnO 3 ferromagnetic interface

Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a promising avenue for controlling such phenomena both statically and dynamically. In this work, we utilize a combination of depth-resolved soft x-ray standing-wave and hard x-ray photoelectron spectroscopies in conjunction with polarization-dependent x-ray absorption spectroscopy to investigate the effects of the metal-insulator transition in LaNiO 3 on the electronic and magnetic states at the LaNiO 3 /CaMnO 3 interface. Here, we report a direct observation of the reduced effective valence state of the interfacial Mn cations in the metallic superlattice with an above-critical LaNiO 3 thickness (6 unit cells, u.c.) facilitated by the charge transfer of itinerant Ni 3d e g electrons into the interfacial CaMnO 3 layer. Conversely, in an insulating superlattice with a below-critical LaNiO 3 thickness of 2 u.c., a homogeneous effective valence state of Mn is observed throughout the CaMnO 3 layers due to the blockage of charge transfer across the interface. The ability to switch and tune interfacial charge transfer enables precise control of the emergent ferromagnetic state at the LaNiO 3 /CaMnO 3 interface and, thus, has far-reaching consequences on the future strategies for the design of next-generation spintronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Temperature-driven band inversion in Pb 0.77 Sn 0.23 Se : Optical and Hall effect studies

Optical and Hall-effect measurements have been performed on single crystals of Pb₀.₇₇Sn₀.₂₃Se, a IV-VI mixed chalcogenide. The temperature dependent (10–300 K) reflectance was measured over 40–7000 cm⁻¹ (5–870 meV) with an extension to 15,500 cm⁻¹ (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy optical spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Thus, density function theory calculation for the electronic band structure also make similar predictions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electronic and structural ground state of heavy alkali metals at high pressure

Here, alkali metals display unexpected properties at high pressure, including emergence of low symmetry crystal structures, that appear to occur due to enhanced electronic correlations among the otherwise nearly-free conduction electrons. We investigate the high pressure electronic and structural ground state of K, Rb, and Cs using x-ray absorption spectroscopy and x-ray diffraction measurements together with ab initio theoretical calculations. The sequence of phase transitions under pressure observed at low temperature is similar in all three heavy alkalis except for the absence of the oC 84 phase in Cs. Both the experimental and theoretical results point to pressure-enhanced localization of the valence electrons characterized by pseudo-gap formation near the Fermi level and strong spd hybridization. Although the crystal structures predicted to host magnetic order in K are not observed, the localization process appears to drive these alkalis closer to a strongly correlated electron state.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS 2 and WS 2

Here, we present in-depth measurements of the electronic band structure of the transition-metal dichalcogenides (TMDs) MoS 2 and WS 2 using angle-resolved photoemission spectroscopy, with focus on the energy splittings in their valence bands at the K point of the Brillouin zone. Experimental results are interpreted in terms of our parallel first-principles computations. We find that interlayer interaction only weakly contributes to the splitting in bulk WS 2 , resolving previous debates on its relative strength. We additionally find that across a range of TMDs, the band gap generally decreases with increasing magnitude of the valence-band splitting, molecular mass, or ratio of the out-of-plane to in-plane lattice constant. Our findings offer an important reference for future studies of electronic properties of MoS 2 and WS 2 and their applications in spintronics and valleytronics devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Pressure-Induced Structural Phase Transition in CeNi: X-ray and Neutron Scattering Studies and First-Principles Calculations

The pressure-induced structural phase transition in the intermediate-valence compound CeNi has been investigated by x-ray and neutron powder diffraction techniques. It is shown that the structure of the pressure-induced CeNi phase (phases) can be described in terms of the Pnma space group. Equations of state for CeNi on both sides of the phase transition are derived and an approximate P-T phase diagram is suggested for P<8 GPa and T<300 K. The observed Cmcm→Pnma structural transition is then analyzed using density functional theory calculations, which successfully reproduce the ground state volume, the phase transition pressure, and the volume collapse associated with the phase transition.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Bismuth chalcohalides and oxyhalides as optoelectronic materials

Several Tl and Pb based halides and chalcohalides have recently been discovered as promising optoelectronic materials [i.e., photovoltaic (PV) and gamma-ray detection materials]. Efficient carrier transport in these materials is attributed partly to the special chemistry of ns 2 ions (e.g., Tl + , Pb 2+ , and Bi 3+ ). However, the toxicity of Tl and Pb is challenging to the development and the wide use of Tl and Pb based materials. In this paper, we investigate materials that contain Bi 3+ , which is also an ns 2 ion. By combining Bi halides with Bi chalcogenides or oxides, the resulting ternary compounds exhibit a wide range of band gaps, offering opportunities in various optoelectronic applications. Density functional calculations of electronic structure, dielectric properties, optical properties, and defect properties are performed on selected Bi 3+ based chalcohalides and oxyhalides, i.e., BiSeBr, BiSI, BiSeI, and BiOBr. We propose different applications for these Bi compounds based on calculated properties, i.e., n-BiSeBr, p-BiSI, and p-BiSeI as PV materials, BiSeBr and BiSI as room-temperature radiation detection materials, and BiOBr as a p-type transparent conducting material. BiSeBr, BiSI, and BiSeBr have chain structures while BiOBr has a layered structure. However, in BiSI, BiSeI, and BiOBr, significant valence-band dispersion is found in the directions perpendicular to the atomic chain or layer because the valence-band edge states are dominated by the halogen states that have strong interchain or interlayer coupling. We find significantly enhanced Born effective charges and anomalously large static dielectric constants of the Bi compounds, which should reduce carrier scattering and trapping and promote efficient carrier transport in these materials. The strong screening and the small anion coordination numbers in Bi chalcohalides should lead to weak potentials for electron localization at anion vacancies. As a result, defect calculations indeed show that the anion vacancies (Se and Br vacancies) in BiSeBr are shallow, which is beneficial to efficient electron transport.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Interplay between spin-orbit coupling and strong correlation effects: Comparison of the three osmate double perovskites Ba 2 AOsO 6 (A=Na, Ca, Y)

High formal valence Os-based double perovskites are a focus of current interest because they display strong interplay of large spin-orbit coupling and strong electronic correlation. Here we present the electronic and magnetic characteristics of a sequence of three cubic Os based double perovskites Ba 2 AOsO 6 (A=Na, Ca, Y), with formal valences of Os +7 (d 1 ),Os +6 (d 2 ), and Os +5 (d 3 ). For these first principles based calculations we apply an “exact exchange for correlated electrons” functional, with exact exchange applied in a hybrid fashion solely to the Os (5d) states. While Ba 2 NaOsO 6 is a reported ferromagnetic Dirac-Mott insulator studied previously, the other two show antiferromagnetic ordering while all retain the undistorted cubic structure. For comparison purposes we have investigated only the ferromagnetic ordered phase. A metal-insulator transition is predicted to occur upon rotating the direction of magnetization in all three materials, reflecting the central role of spin-orbit coupling in these small gap osmates. Surprises arising from comparing formal charge states with the radial charge densities are discussed. Chemical shielding factors and orbital susceptibilities are provided for comparison with future nuclear magnetic resonance data.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Improved pseudopotential transferability for magnetic and electronic properties of binary manganese oxides from DFT + U + J calculations

In this work, we employ the fully anisotropic DFT+U+J approach with the PBEsol functional to investigate ground-state magnetic and electronic properties of bulk binary manganese oxides: MnO, Mn 3 O 4 , α-Mn 2 O 3 , and β-MnO 2 , in order of increasing Mn valence. The computed crystal structures, noncollinear magnetic ground states, and corresponding electronic structures are in good agreement with the experimental data and hybrid functional calculations available in the literature. We take into account the nonlinear core-valence interaction in our Mn pseudopotential designed by ourselves, as it has been proven to be important for transition-metal systems. Although the Hubbard U term is capable by itself of opening a band gap, the explicitly defined exchange parameter J plays an important role in improving the detailed electronic and noncollinear magnetic structure profiles. Appropriate band gaps are obtained with U values smaller than those used in previously reported calculations. Our results suggest that pseudopotential design together with DFT+U+J enables the acquisition of accurate properties of complex magnetic systems using a nonhybrid density functional.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Thermoelectric power as a probe of density of states in correlated actinide materials: The case of PuCoGa 5 superconductor

We present measurements of the thermoelectric power of the plutonium-based unconventional superconductor PuCoGa 5 . The data is interpreted within a phenomenological model for the quasiparticle density of states of intermediate valence systems and the results are compared with results obtained from photoemission spectroscopy. The results are consistent with intermediate valence nature of 5f-electrons, furthermore, we propose that measurements of the Seebeck coefficient can be used as a probe of density of states in this material, thereby providing a link between transport measurements and photoemission in strongly correlated materials. Here, we discuss these results and their implications for the electronic structure determination of other strongly correlated systems, especially nuclear materials.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effects of spin excitons on the surface states of SmB 6 : A photoemission study

We present the results of a high-resolution valence-band photoemission spectroscopic study of SmB 6 which shows evidence for a V-shaped density of states of surface origin within the bulk gap. The spectroscopy data are interpreted in terms of the existence of heavy 4 f surface states, which may be useful in resolving the controversy concerning the disparate surface Fermi-surface velocities observed in experiments. Most importantly, we find that the temperature dependence of the valence-band spectrum indicates that a small feature appears at a binding energy of about - 9 meV at low temperatures. We also attribute this feature to a resonance caused by the spin-exciton scattering in SmB 6 which destroys the protection of surface states due to time-reversal invariance and spin-momentum locking. Thus, the existence of a low-energy spin exciton may be responsible for the scattering, which suppresses the formation of coherent surface quasiparticles and the appearance of the saturation of the resistivity to temperatures much lower than the coherence temperature associated with the opening of the bulk gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electronic structures of C u 2 O , C u 4 O 3 , and CuO: A joint experimental and theoretical study

We present a joint experimental and theoretical study for the electronic structures of copper oxides including Cu 2 O, CuO, and the metastable mixed-valence oxide Cu 4 O 3 . The optical band gap is determined by experimental optical absorption coefficient, and the electronic structure in valence and conduction bands is probed by photoemission and electron energy loss spectroscopies, respectively. Furthermore, we compare our experimental results with many-body GW calculations utilizing an additional on-site potential for d-orbital energies that facilitates tractable and predictive computations. The side-by-side comparison between the three oxides, including a band insulator (Cu2O) and two Mott/charge-transfer insulators (CuO, Cu 4 O 3 ) leads to a consistent picture for the optical and band-structure properties of the Cu oxides, strongly supporting indirect band gaps of about 1.2 and 0.8 eV in CuO and Cu 4 O 3 , respectively. This comparison also points towards surface oxidation and reduction effects that can complicate the interpretation of the photoemission spectra.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Properties of rare-earth iron garnets from first principles

Here, structural and magnetic properties of rare-earth iron garnets (RIG), which contain 160 atoms per unit cell, are systematically investigated for rare-earth elements varying from La to Lu (and including Y), by performing spin polarized density-functional calculations. The effects of 4f electrons (as core or as valence electrons) on the lattice constant, internal coordinates, and bond lengths are found to be rather small, with these predicted structural properties agreeing rather well with available experiments. On the other hand, treating such electrons as valence electrons is essential to interpret the total magnetization measured in some RIG at low temperature, the different orientation and magnitude of the magnetizations that Fe and rare-earth ions can adopt and to also explain why some RIG have a compensation temperature while others do not. The magnetic exchange couplings and orbital-projected density of states are also reported for two representative materials, namely Gd 3 Fe 5 O 12 and Nd 3 Fe 5 O 12 , when accounting for their 4f electrons.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Bulk Fermi surface of the Weyl type-II semimetallic candidate γ - MoTe 2

The electronic structure of semi-metallic transition-metal dichalcogenides, such as WTe$_2$ and orthorhombic $\gamma-$MoTe$_2$, are claimed to contain pairs of Weyl points or linearly touching electron and hole pockets associated with a non-trivial Chern number. For this reason, these compounds were recently claimed to conform to a new class, deemed type-II, of Weyl semi-metallic systems. A series of angle resolved photoemission experiments (ARPES) claim a broad agreement with these predictions detecting, for example, topological Fermi arcs at the surface of these crystals. We synthesized single-crystals of semi-metallic MoTe$_2$ through a Te flux method to validate these predictions through measurements of its bulk Fermi surface (FS) via quantum oscillatory phenomena. We find that the superconducting transition temperature of $\gamma-$MoTe$_2$ depends on disorder as quantified by the ratio between the room- and low-temperature resistivities, suggesting the possibility of an unconventional superconducting pairing symmetry. Similarly to WTe$_2$, the magnetoresistivity of $\gamma-$MoTe$_2$ does not saturate at high magnetic fields and can easily surpass $10^{6}$ \%. Remarkably, the analysis of the de Haas-van Alphen (dHvA) signal superimposed onto the magnetic torque, indicates that the geometry of its FS is markedly distinct from the calculated one. The dHvA signal also reveals that the FS is affected by the Zeeman-effect precluding the extraction of the Berry-phase. A direct comparison between the previous ARPES studies and density-functional-theory (DFT) calculations reveals a disagreement in the position of the valence bands relative to the Fermi level $\varepsilon_F$. Here in this paper, we show that a shift of the DFT valence bands relative to $\varepsilon_F$, in order to match the ARPES observations, and of the DFT electron bands to explain some of the observed dHvA frequencies, leads to a good agreement between the calculations and the angular dependence of the FS cross-sectional areas observed experimentally. However, this relative displacement between electron- and hole-bands eliminates their crossings and, therefore, the Weyl type-II points predicted for $\gamma-$MoTe$_2$

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗