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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,369 records · Page 76
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Photochemical Decomposition of Y‐Series Non‐Fullerene Acceptors Is Responsible for Degradation of High‐Efficiency Organic Solar Cells

Abstract Organic photovoltaic cells that employ Y‐series non‐fullerene acceptors (NFAs) have recently achieved impressive power‐conversion efficiencies (>18%). To fulfill their commercial promise, it is important to quantify their operational lifetimes and understand their degradation mechanisms. In this work, the spectral‐dependent photostability of films and solar cells comprising several Y‐series acceptors and the donor polymer PM6 is investigated systematically. By applying longpass filters during aging, it is shown that UV/near‐UV photons are responsible for the photochemical decomposition of Y‐series acceptors; this degradation is the primary driver of early solar cell performance losses. Using mass spectrometry, the vinylene linkage between the core and electron‐accepting moieties of Y‐series acceptors is identified as the weak point susceptible to cleavage under UV‐illumination. Employing a series of device characterization, along with numerical simulations, the efficiency losses in organic photovoltaic cells are attributed to the formation of traps, which reduces charge extraction efficiency and facilitates non‐radiative recombination as the Y‐series acceptors degrade. This study provides new insights for molecular degradation of organic photovoltaic absorber materials and highlights the importance of future molecular design and strategies for improved solar cell stability.

14 SOLAR ENERGY↗
NASA NTRS1978

Design and fabrication of solar cell modules

A program conducted for design, fabrication and evaluation of twelve silicon solar cell modules is described. The purpose of the program was to develop a module design consistent with the requirements and objectives of JPL specification and to also incorporate elements of new technologies under development to meet LSSA Project goals. Module development emphasized preparation of a technically and economically competitive design based upon utilization of ion implanted solar cells and a glass encapsulation system. The modules fabricated, tested and delivered were of nominal 2 X 2 foot dimensions and 20 watt minimum rating. Basic design, design rationale, performance and results of environmental testing are described.

Shaughnessy, T. P.↗
NASA NTRS1991

The effect of low energy protons on silicon solar cells with simulated coverglass cracks

Results of a series of low-energy proton (LEP) tests are presented. The purpose of the tests was to investigate the effect of low-energy protons on the electrical performance of solar cells with simulated cracked covers. The results of the tests were then related to the space environment. A matrix of LEP tests was set up using solar cells with simulated cracks to determine the effect on electrical performance as a function of fluence, energy, crack width, coverglass adhesive shielding, crack location, and solar cell size. The results of the test were, for the most part, logical, and consistent.

Gasner, S.↗
DOE OSTI2020

InGaSb Defect Filter Layer to Improve Performance of GaSb Solar Cells Grown on GaAs Substrates

The reduction of the threading dislocation density in metamorphic GaSb grown on GaAs substrates through the use of InGaSb defect filter layers has been investigated. More specifically, we study the effects of strain and thickness on the ability of a InGaSb defect filter layer to reduce threading dislocations in GaSb solar cells grown on GaAs substrates. The strain between the GaSb metamorphic layer on GaAs substrate (99.5% relaxed) and the InGaSb defect filter layer is varied by changing the indium composition in the InGaSb layer. Here, it is demonstrated that an InGaSb defect filter layer with 0.6% strain is more effective for blocking threading dislocations compared with higher-strain layers, resulting in improved short-circuit current (J sc ) and open-circuit voltage (V oc ) for the metamorphic GaSb solar cell. The optimization of the defect filter layer involves varying the thickness of the layer to achieve the lowest possible threading dislocation density. This also takes into account the critical thickness of the InGaSb layer on GaSb to avoid generation of threading dislocations from the InGaSb layer itself. It is shown that adding an In 0.11 Ga 0.89 Sb defect filter layer with thickness of 250 nm and 0.6% strain beneath a GaSb solar cell grown on a GaAs substrate improves V oc from 0.1 V to 0.16 V and J sc from 19.7 mA/cm 2 to 24.7 mA/cm 2 .

36 MATERIALS SCIENCE↗
NASA NTRS1990

Estimation of minority carrier diffusion lengths in InP/GaAs solar cells

Minority carrier diffusion length is one of the most important parameters affecting the solar cell performance. An attempt is made to estimate the minority carrier diffusion lengths is the emitter and base of InP/GaAs heteroepitaxial solar cells. The PC-1D computer model was used to simulate the experimental cell results measured at NASA Lewis under AMO (air mass zero) spectrum at 25 C. A 16 nm hole diffusion length in the emitter and a 0.42 micron electron diffusion length in the base gave very good agreement with the I-V curve. The effect of varying minority carrier diffusion lengths on cell short current, open circuit voltage, and efficiency was studied. It is also observed that the front surface recombination velocity has very little influence on the cell performance. The poor output of heteroepitaxial cells is caused primarily by the large number of dislocations generated at the interfaces that propagate through the bulk indium phosphide layers. Cell efficiency as a function of dislocation density was calculated and the effect of improved emitter bulk properties on cell efficiency is presented. It is found that cells with over 16 percent efficiencies should be possible, provided the dislocation density is below 10(exp 6)/sq cm.

Jain, R. K.↗
DOE OSTI2024

As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

Abstract The efficiency potential for single‐junction photovoltaics (PV) is described by the detailed balance model, which requires the elimination of nonradiative recombination and perfect minority carrier collection. Improvements in GaAs, Si, and perovskite PV follow this model. It might be more complex for CdTe, a leading thin‐film PV technology. While lifetime, passivation, and doping goals for 25% efficient CdTe solar cells are largely reached, voltage is ≈20% below the detailed balance limit. Why is that? In Se‐alloyed CdSe x Te 1‐x (Se is required for >20% efficiency) additional losses can occur due to electrostatic and bandgap fluctuations and due to electronic trap states. To understand mechanisms limiting CdSeTe solar cell performance and to suggest improvements, carrier dynamics, and transport in CdSe x Te 1‐x with variation in Se composition and as doping is analyzed. It is shown that trapping, likely due to anion‐site defects and their complexes, is correlated with low charge carrier mobility of 0.1–0.6 cm 2 (Vs) −1 . Even with 1000 ns charge carrier lifetimes, carrier diffusion length is less than the absorber thickness, reducing efficiency to ≈23%. Device simulations are used to analyze the performance of CdSe x Te 1‐x solar cells; thermodynamic models are not sufficient for absorbers with electronic disorder and trapping.

14 SOLAR ENERGY↗
NASA NTRS1980

A base-metal conductor system for silicon solar cells

Solder, copper, and silver are evaluated as conductor layer metals for silicon solar cell metallization on the basis of metal price stability and reliability under operating conditions. Due to its properties and cost, copper becomes an attractive candidate for the conductor layer. It is shown that nickel operates as an excellent diffusion barrier between copper and silicon while simultaneously serving as an electrical contact and mechanical contact to silicon. The nickel-copper system may be applied to the silicon by plating techniques utilizing a variety of plating bath compositions. Solar cells having excellent current-voltage characteristics are fabricated to demonstrate the nickel-copper metallization system.

Coleman, M. G.↗
NASA NTRS1976

Experimental investigation of the excess charge and time constant of minority carriers in the thin diffused layer of 0.1 Ohm-cm silicon solar cells

The observed low open-circuit voltage in 0.1 Ohm-cm solar cells is probably related to an excessively high diode saturation current. Theoretical studies conducted by Lindholm et al. (1975) and by Godlewski et al. (1975) have shown that a high saturation current could be produced by either high recombination rates or bandgap narrowing effects. A description is given of an investigation which shows that bandgap narrowing effects have a first order significance in determining the charge carrier transport controlling the open-circuit voltage of 0.1 Ohm-cm silicon solar cells.

Godlewski, M. P.↗
NASA NTRS2005

Chemically Deposited Thin-Film Solar Cell Materials

We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.

Raffaelle, R.↗
DOE OSTI2023

Towards Long‐Term Stable Perovskite Solar Cells: Degradation Mechanisms and Stabilization Techniques

It is certain that perovskite materials must be a game‐changer in the solar industry as long as their stability reaches a level comparable with the lifetime of a commercialized Si photovoltaic. However, the operational stability of perovskite solar cells and modules still remains unresolved, especially when devices operate in practical energy‐harvesting modes represented by maximum power point tracking under 1 sun illumination at ambient conditions. This review article covers from fundamental aspects of perovskite instability including chemical decomposition pathways under light soaking and electrical bias, to recent advances and techniques that effectively prevent such degradation of perovskite solar cells and modules. In particular, fundamental causes for permanent degradation due to ion migration and trapped charges are overviewed and explain their interplay between ions and charges. Based on the degradation mechanism, recent advances on the strategies are discussed to slow down the degradation during operation for a practical use of perovskite‐based solar devices.

14 SOLAR ENERGY↗
DOE OSTI2021

Identification of Recombination Losses in CdSe/CdTe Solar Cells from Spectroscopic and Microscopic Time-Resolved Photoluminescence

Due to the lowest-cost and best reliability, CdTe solar cells are the leading thin-film photovoltaic technology. Increasing open-circuit voltage by reducing recombination represents the most promising path toward further improvements. Analysis is needed to identify limitations that cause efficiency losses. To achieve this goal for Cu-doped CdSe/CdTe solar cells, time-resolved spectroscopy and microscopy are developed and applied. Recombination lifetimes and radiative efficiency identify that defect-mediated recombination is the dominant voltage loss mechanism. When carrier lifetimes are averaged over many crystalline grains, they increase from 180 to 430 ns when Al2O3 is applied to the back contact. The quasi-Fermi-level splitting correspondingly increases from 880–905 to 906–931 mV, indicating a pathway to overcome the long-standing 900 mV voltage limitation. However, the dominant recombination losses are attributed to the absorber bulk. From microscopic carrier lifetime measurements, it is identified that space charge fields due to charged grain boundaries (GBs) lead to recombination in the CdTe absorber bulk. At high injection, GB space charge fields are screened, but that occurs above 1 Sun excitation conditions. Alloying with selenium in the near-interface CdSeTe absorber region reduces GB losses and is identified as one of the factors leading to high radiative and power conversion efficiency.

14 SOLAR ENERGY↗
NASA NTRS1988

Tunneling effects in the current-voltage characteristics of high-efficiency GaAs solar cells

Evidence is that tunneling via states in the forbidden gap is the dominant source of excess current in the dark current-voltage (I-V) characteristics of high-efficiency DMCVD grown Al(x)Ga(1-x)As/GaAs(x is equal to or greater than 0.85) solar cells. The dark forward and reverse I-V measurements were made on several solar cells, for the first time, at temperatures between 193 and 301 K. Low-voltage reverse-bias I-V data of a number of cells give a thermal activation energy for excess current of 0.026 + or - 0.005 eV, which corresponds to the carbon impurity in GaAs. However, other energy levels between 0.02 eV and 0.04 eV were observed in some cells which may correspond to impurity levels introduced by Cu, Si, Ge, or Cd. The forward-bias excess current is mainly due to carrier tunneling between localized levels created in the space-charge layer by impurities such as carbon, which are incorporated during the solar cell growth process. A model is suggested to explain the results.

Kachare, R.↗