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At least 1,369 records · Page 76
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Measurement of Stark-split beam and carbon charge exchange emissions for simultaneous B-field and temperature/rotation analysis at DIII-D

A set of two newly designed, single-channel Czerny–Turner spectrometers has been deployed at the DIII-D tokamak for measurements of the motional Stark effect (MSE) split beam emission and the C6+ (CVI) carbon charge exchange recombination (CER) emission at high spectral (δλ = 0.13 nm) and temporal (1–5 kHz) resolution. High throughput optics (f/# = 2.8) allow for good signal-to-noise at high time resolution using fast EMCCD detectors. The MSE emission allows for spectral fitting of the magnitude and direction of the local B-field, while the carbon emission yields local ion temperature and toroidal rotation information. To reduce so-called Doppler broadening of the MSE emission, a new channel-specific variable lens-masking approach has been developed. Experimental data collected from the 2023 DIII-D experimental campaign demonstrate the signal quality and instrument fidelity for both diagnostic measurements. Moreover, initial CER data analysis shows a clear evolution of the toroidal rotation during edge localized modes. Initial progress on the advanced MSE model, including a new validated ray-trace model of the DIII-D collection optics, is shown via sensitivity analysis.

Instruments & Instrumentation↗
DOE OSTI2024

Interplay of coulomb and exciton–phonon coupling controls singlet fission dynamics in two pentacene polymorphs

Pentacene is an important model organic semiconductor in both the singlet exciton fission (SF) and organic electronics communities. We have investigated the effect of changing crystal structure on the SF process, generating multiple triplet excitons from an initial singlet exciton, and subsequent triplet recombination. Unlike for similar organic semiconductors that have strong SF sensitive to polymorphism, we find almost no quantitative difference between the kinetics of triplet pair (TT) formation in the two dominant polymorphs of pentacene. Both pairwise dimer coupling and momentum-space crystal models predict much faster TT formation from the bright singlet excited state of the Bulk vs ThinFilm polymorph, contrasting with the experiment. GW and Bethe–Salpeter equation calculations, including exciton–phonon coupling, reveal that ultrafast phonon-driven transitions in the ThinFilm polymorph compensate the intrinsically slower purely Coulomb-mediated TT formation channel, rationalizing the similarity in observed rates. Taking into account the influence of subtle structural distinctions on both the direct and phonon-mediated SF pathways reveals a predictive capability to these methods, expected to be applicable to a wide variety of molecular crystals.

14 SOLAR ENERGY↗
DOE OSTI2024

Surface chlorination of IrO2(110) by HCl

The ability to controllably chlorinate metal-oxide surfaces can provide opportunities for designing selective oxidation catalysts. In the present study, we investigated the surface chlorination of IrO2(110) by HCl using temperature programmed reaction spectroscopy (TPRS), x-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) calculations. We find that exposing IrO2(110) to HCl, followed by heating to 650 K in ultrahigh vacuum, produces nearly equal quantities of on-top and bridging Cl atoms on the surface, Clt and Clbr, where the Clbr atoms replace O-atoms that are removed from the surface by H2O formation. After HCl adsorption at 85 K, only H2O desorbs at low Cl coverages during TPRS, but HCl begins to desorb in increasing yields as the Cl coverage is increased above about 0.5 monolayer (ML). The desorption of Cl2 was not observed under any conditions, in good agreement with the high barrier for this reaction predicted by DFT. A maximum Cl coverage of 1 ML, with nearly equal coverages of Clt and Clbr atoms, could be generated by reacting HCl with IrO2(110) in UHV. Our results suggest that a kinetic competition between recombinative HCl and H2O desorption under the conditions studied limits the saturation Cl coverage to a value less than the 2 ML maximum predicted by thermodynamics. XPS further shows that the partitioning of Cl between the Clt and Clbr states can be altered by subjecting partially chlorinated IrO2(110) to reductive or oxidative treatments, demonstrating that the Cl site population can change dynamically in response to the gas environment. Our results provide insights for understanding the chlorination of IrO2(110) by HCl and can enable future experimental studies to determine how Cl-modification alters the surface chemical reactivity of IrO2(110) and potentially enhances selectivity toward partial oxidation chemistry.

Chemistry↗
DOE OSTI2024

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

Electroluminescence↗
DOE OSTI2024

Curious cross-field transport effects in multi-ion, magnetized plasma

In contrast to single-ion plasma, multiple-ion-species plasma exhibits new, curious, and large transport effects. On short timescales, where ions exchange momentum, magnetized multi-ion plasma behaves as a most unusual substance, compressible across field lines in number density but incompressible in charge density. It takes 40 times longer for electrons to participate. In this ion–ion cross-field transport regime, we identified the charge-incompressibility heat pump effect, transferring heat both spatially and between species. Curiously, the direction of impurity transport strongly depends on plasma magnetization, characterized by the ratio of light ion gyrofrequency to the collision frequency between light and heavy ion species. The expulsion of heavy ion impurities from a hotspot occurs sufficiently quickly to be observable on MagLIF, so long as plasma becomes sufficiently collisionally magnetized under implosion. Even more curious, multi-ion transport changes its nature in partially ionized plasma, where ions occupy different charge states. In this regime, we identify a partial-ionization deconfinement effect. The combination of cross-field transport, ionization, and recombination leads to a net ion charge moving across magnetic field lines on the ion–ion transport timescale as opposed to the electron–ion transport timescale. Cross-field transport effects in multi-ion plasma are important in a number of applications, including nuclear fusion and plasma mass filters.

Mlodik, M. E. (ORCID:0000000343003941)↗
DOE OSTI2025

Particle balance of deuterium during deuterium shattered pellet injection shutdown in DIII-D

A particle balance analysis was conducted during a deuterium (D 2 ) shattered pellet injection-induced plasma shutdown on the DIII-D tokamak to determine why less than 20% of the pellet material is assimilated into the core plasma by the mid-current quench (CQ). Initially, most of the D 2 is injected as frozen shards and ionized upon entering the vessel. During the thermal quench, ionized particles move to the divertors and subsequently to the center post (CP) walls, where they rapidly recycle and partially accumulate as neutrals without assimilating into the core plasma. In contrast, the particle flux to the outer midplane walls is negligible, despite being accompanied by hot plasma with electron temperatures exceeding 100 eV. During mid-CQ, volume recombination effects, although not large enough to impact overall particle balance, were significant enough to require accounting for accurate interpretation of fast-framing camera D-alpha signals and the estimation of the CP wall particle flux. In addition, toroidal asymmetries, observed in measurements of toroidal electron density perturbations and the phase of magnetohydrodynamic modes, are present throughout the shutdown and can account for a discrepancy in the assimilation rate for up to 50% of the observed D 2 particle inventory. These sources and sinks of particles and fluxes were identified using absolutely calibrated D-alpha brightness and Langmuir probes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Arsenic activation and compensation in single crystal CdTe bilayers

In state-of-the art polycrystalline CdTe photovoltaics, group-V dopant activation is about 2%. Low activation can create electronic defects and lead to recombination and band tail losses. To develop methods to overcome this limitation, dopant activation was systematically investigated using molecular beam epitaxy (MBE) grown single crystal bilayers of As-doped CdTe on undoped CdTe. Results suggest multiple paths for improved As-activation in polycrystalline CdTe-based devices. It was found that the carrier concentration in this MBE material saturated at ∼3 × 1016 cm−3, with high levels (>50%) of As-activation possible. High activation could be achieved with a post-growth activation temperature of ∼450 °C, when the initial doping level was below the saturation level. However, at typical polycrystalline As incorporation levels (>5 × 1016 cm−3), the excess As is inactive or compensating, requiring elevated temperatures (500–600 °C) to achieve high activation. Oxygen in the annealing ambient was detrimental, while the effect of CdCl2 in the ambient is more case-dependent. A 575 °C activation anneal was combined with a 450 °C CdCl2 treatment to better understand the implications for polycrystalline CdTe. Interestingly, on highly doped samples, processes ending with a high temperature step displayed high activation, while those ending at 450 °C significantly reduced the carrier concentration (with or without CdCl2 in the ambient). Low activation can be restored with another high temperature anneal, allowing reproducible toggling between high and low activation based on the final temperature. Photoluminescence revealed the presence of donor–acceptor pairs in the low activation state that appear to be associated with a compensating defect.

14 SOLAR ENERGY↗
DOE OSTI2025

Thermoradiative energy conversion in infrared interband cascade InAs/GaSb/AlInSb/GaSb type-II superlattice diodes

Thermoradiative energy conversion presents a means for the direct conversion of thermal energy through radiative transfer to a cold scene. However, much of the study of thermoradiative principles has been based on theory and simulations, with only sparse reports on the experimental demonstration of the concept. This work studies thermoradiative energy conversion in InAs/GaSb/AlInSb/GaSb type-II superlattice cascade devices. The devices exhibit a cutoff wavelength of 3.2 μm at 300 K, corresponding to a bandgap of 0.39 eV. Testing under a temperature-controlled chamber and scene demonstrates a maximum power density of 2.9 mW/m2 at a cell temperature of 121 °C. It is consistent with expected values for device operation limited by Shockley–Read–Hall non-radiative recombination. This result is a significant step in providing an experimental demonstration of thermoradiative energy conversion and a means to characterize cell performance, providing a foundation for further development to achieve practical values for power generation.

Islam, Md Toriqul (ORCID:0000000249871320)↗
DOE OSTI2025

Efficiency cliff in scaling InGaN light-emitting diodes down to submicron

The top-down submicron fabrication of blue-emitting light-emitting diodes on Qromis Substrate Technology substrates is reported. Light-emitting diodes with mesa sizes as small as 250 × 250 nm 2 show ideal forward voltage and low leakage current density. It is observed that sidewall treatment and passivation methods used in micro-light-emitting diodes (2–20 μ m) do not lead to the same level of sidewall recombination suppression for submicron ones (< 1 μ m), as evidenced by a ∼70% decrease in peak external quantum efficiencies when mesa sizes are scaled from 2 μ m down to 250 nm. This is attributed to the lateral carrier diffusion being comparable to the mesa size, regardless of the sidewall passivation and recovery. The results call for rethinking the impact of sidewalls in emerging top-down fabricated (sub)micrometer-light-emitting diodes.

42 ENGINEERING↗
DOE OSTI2025

Impact of quantum well thickness on efficiency loss in InGaN/GaN LEDs: Challenges for thin-well designs

We investigate the impact of quantum well (QW) thickness on efficiency loss in c-plane InGaN/GaN LEDs using a small-signal electroluminescence technique. Multiple mechanisms related to efficiency loss are independently examined, including injection efficiency, carrier density vs current density relationship, phase space filling, quantum-confined Stark effect, and Coulomb enhancement. An optimal QW thickness of around 2.7 nm in these InGaN/GaN LEDs was determined for QWs having constant In composition. Despite improved control of deep-level defects and lower carrier density at a given current density, LEDs with thin QWs still suffer from an imbalance in enhancement effects on the radiative and intrinsic Auger–Meitner recombination coefficients. The imbalance in enhancement effects results in a decline in internal quantum efficiency and radiative efficiency with decreasing QW thickness at low current density in LEDs with QW thicknesses below 2.7 nm. Here, we also investigate how LED modulation bandwidth varies with QW thickness, identifying the key trends and their implications for device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Characterization of dangling bond defects at the crystalline Si/SiO x interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy

Monocrystalline silicon solar cells can achieve photoconversion efficiencies exceeding 26%; however, performance-limiting defects that trap carriers continue to be a challenge. In this work, we have characterized Si solar cells with tunneling SiO x /polycrystalline-Si (poly-Si) passivating contacts (TOPCon) on As-doped Czochralski Si wafers with electrically detected magnetic resonance (EDMR) spectroscopy. We fabricated 2 × 20 mm 2 TOPCon-like mini solar cells with edge passivation alongside larger 4 cm 2 sister cells and obtained similar device characteristics. We performed EDMR spectroscopy at 300 K on two minicells with different degrees of surface passivation based on the recombination parameter, J o , values of 40 and 310 fA/cm2. We optimized the resolution and the signal-to-noise ratio of the EDMR response of the minicells by varying the forward bias voltage and the magnetic field modulation amplitude. We detect two distinct signals with EDMR spectroscopy, an axial-like signal at g = 2.009, 2.0087, and 2.0015, and an isotropic signal at g = 2.0024, which we attribute to Si dangling bonds (P b0 and P b centers) and boron–oxygen related defects, respectively, at or near the c-Si/SiO x interface. The EDMR signals were lower for the cell with a lower value of J o , while the ratio of the two defect populations was very similar. The EDMR signal increases with forward bias but drops to zero at bias voltages >0.5 V, consistent with interface defects within or near the boron-doped emitter depletion region. Our study demonstrates a method to fabricate minicells that can be characterized with EDMR spectroscopy to detect industrially relevant defects in TOPCon cells.

14 SOLAR ENERGY↗
DOE OSTI2025

Longitudinal position dependence of dark line defect growth rate in high-power diode lasers at 790 nm

Using a nondestructive, in situ near-infrared defect imaging technique, we obtained time-resolved images of dark line defect (DLD) growth in the cavities of several high-power 790-nm diode lasers and calculated individual DLD growth rates. A clear longitudinal spatial dependence in the DLD growth rate was observed, in which the DLD growth rate was faster near the anti-reflective (AR) facet. Longitudinal spatial hole burning simulation results indicate that the total photon density increases toward the AR facet, while the carrier density decreases toward the AR facet. Here, these results suggest that photon absorption plays a key role in enhancing DLD growth beyond the contribution of the traditional carrier capture mechanism. Asymmetric DLD growth that was preferentially directed toward the high-reflectivity facet was also observed, providing further support for the role of photon absorption in the growth process. To account for these findings, we propose a photon-accelerated mechanism for the enhancement of DLD growth in which the slower carrier capture process in the traditional recombination-enhanced dislocation glide mechanism is replaced by a faster photon absorption process.

Engineering - Electronic and electrical engineerin↗
DOE OSTI2025

Experimental study of high-energy single-pulse nanosecond discharges in pin-to-pin configuration

Single-pulse pin-to-pin nanosecond pulsed discharges in ambient air (gap distances of 3–7 mm) were investigated at high pulse energies (∼20–30 mJ deposited energy per 11 ns full width at half maximum pulse). A Michelson interferometry setup (532 nm continuous-wave laser) was employed to record time-resolved interferograms of the discharge, enabling spatially resolved calculation of the electron number density. An intensified charge-coupled device camera was used to capture the spatiotemporal evolution of the discharge (streamer formation and spark channel development), and Coherent Anti-Stokes Raman Spectroscopy (CARS) was used to measure post-discharge N 2 vibrational temperatures. Discharge current and voltage were monitored with a back-current shunt. The discharge was initiated with simultaneous cathode-directed and anode-directed streamers that bridge the gap within ∼1 ns and form a luminous, filamentary plasma channel immediately after breakdown. Laser interferometry measurements showed peak electron number densities of the order of 10 1 7–10 18 cm −3 , occurring about 15–20 ns after pulse arrival at the discharge gap. Shorter gap discharges yielded higher peak electron densities, consistent with the higher energy density in the smaller gaps. Spatially, the electron density was highest near the electrodes and decreased toward the midgap region, with 5 and 7 mm gaps exhibiting a pronounced drop in the central channel. CARS indicated initial vibrational temperatures of approximately 4000–6000 K in the spark core of ∼50 ns after the discharge onset, decaying on a ∼500 ns timescale as the plasma cooled and recombined.

Coherent anti-Stokes Raman spectroscopy↗
DOE OSTI2026

Analysis of native oxides grown on single-crystal CdTe and MgCdTe

Over the course of CdTe photovoltaics development, many refinements to the device stack have been made. One area of current interest is the back contact interface, where surface passivation is critical to prevent recombination at the interface. One candidate material for achieving strong passivation is TeO 2 . Using scanning transmission electron microscopy, we investigate native oxide formations on CdTe and Mg x Cd 1−x Te substrates to better understand the oxides' chemical composition and the interface they form with the material they are grown on. We find that substoichiometric TeO x forms as a native oxide on CdTe, and on Mg x Cd 1−x Te, we found a MgO native oxide. Some TeO x appeared atop the MgO layer, though it was not consistently present. As a result, the native oxides had preferential interface terminations, with Cd terminations at the CdTe/TeO x interface and Te terminations at the Mg x Cd 1−x Te/MgO interface.

14 SOLAR ENERGY↗
DOE OSTI2026

Correlation of coercivity, microstructure, and surface defects in HDDR-processed Nd-Fe-B powders for bonded magnet applications

Hydrogenation-Disproportionation-Desorption-Recombination (HDDR) is an effective method for producing high coercivity, anisotropic powder from either fresh Nd-Fe-B alloy or recycled Nd-Fe-B magnets for use in bonded magnets. We investigated the impact of surface defects on the coercivity of HDDR-processed Nd-Fe-B using scanning electron microscopy (SEM), magnetic measurements, and micromagnetic simulations. We observed that coercivity decreases as particle size reduces, with SEM revealing surface defects and the detachment of Nd 2 Fe 14 B grains and Nd-rich phases from the particle surface. Micromagnetic simulations indicate that demagnetization initiates at the particle surface, where these defects are most concentrated, leading to reduced coercivity. The reduction in squareness of demagnetization curve, knee point field and coercivity for smaller HDDR particles is attributed to an increased specific surface area, which exhibits reduced nucleation field and weak domain wall pinning field during magnetization reversal. By addressing the role of surface defects in coercivity degradation, this study provides insights for improving both new powder production and recycling strategies, ultimately leading to enhanced performance of bonded magnets and contributing to more sustainable practices in the rare earth supply chain. One potential strategy to enhance the performance of HDDR Nd-Fe-B materials involves reducing the fraction of fine particles ($<$35 µm) and promoting the formation of grain boundary phases on particle surfaces.

Liu, Xubo B. [Ames Laboratory (AMES), Ames, IA (Un↗
DOE OSTI2020

Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis

Longitudinal spatial hole burning (LSHB) in high-power semiconductor lasers is analysed by numerically solving one-dimensional (1D) rate equations. Calculations are performed for GaAs-based lasers operating at a wavelength of 1.06 μm. It is shown that the LSHB-induced decrease in output power can be accounted for by two mechanisms: build-up of spontaneous recombination and decrease in slope efficiency, equivalent to a rise in internal optical loss. We analyse the influence of different laser chip parameters on the magnitude of the LSHB effect. In particular, it is shown that to suppress LSHB it is preferable to increase the optical confinement factor Γ. We examine the relationship between LSHB and other mechanisms capable of reducing the output power. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Spatially separating redox centers on 2D carbon nitride with cobalt single atom for photocatalytic H 2 O 2 production

Redox cocatalysts play crucial roles in photosynthetic reactions, yet simultaneous loading of oxidative and reductive cocatalysts often leads to enhanced charge recombination that is detrimental to photosynthesis. This study introduces an approach to simultaneously load two redox cocatalysts, atomically dispersed cobalt for improving oxidation activity and anthraquinone for improving reduction selectivity, onto graphitic carbon nitride (C 3 N 4 ) nanosheets for photocatalytic H 2 O 2 production. Spatial separation of oxidative and reductive cocatalysts was achieved on a two-dimensional (2D) photocatalyst, by coordinating cobalt single atom above the void center of C 3 N 4 and anchoring anthraquinone at the edges of C 3 N 4 nanosheets. Such spatial separation, experimentally confirmed and computationally simulated, was found to be critical for enhancing surface charge separation and achieving efficient H 2 O 2 production. This center/edge strategy for spatial separation of cocatalysts may be applied on other 2D photocatalysts that are increasingly studied in photosynthetic reactions.

2D photocatalyst↗
DOE OSTI2020

Swine acute diarrhea syndrome coronavirus replication in primary human cells reveals potential susceptibility to infection

Zoonotic coronaviruses represent an ongoing threat, yet the myriads of circulating animal viruses complicate the identification of higher-risk isolates that threaten human health. Swine acute diarrhea syndrome coronavirus (SADS-CoV) is a newly discovered, highly pathogenic virus that likely evolved from closely related HKU2 bat coronaviruses, circulating in Rhinolophus spp. bats in China and elsewhere. As coronaviruses cause severe economic losses in the pork industry and swine are key intermediate hosts of human disease outbreaks, we synthetically resurrected a recombinant virus (rSADS-CoV) as well as a derivative encoding tomato red fluorescent protein (tRFP) in place of ORF3. rSADS-CoV replicated efficiently in a variety of continuous animal and primate cell lines, including human liver and rectal carcinoma cell lines. Of concern, rSADS-CoV also replicated efficiently in several different primary human lung cell types, as well as primary human intestinal cells. rSADS-CoV did not use human coronavirus ACE-2, DPP4, or CD13 receptors for docking and entry. Contemporary human donor sera neutralized the group I human coronavirus NL63, but not rSADS-CoV, suggesting limited human group I coronavirus cross protective herd immunity. Importantly, remdesivir, a broad-spectrum nucleoside analog that is effective against other group 1 and 2 coronaviruses, efficiently blocked rSADS-CoV replication in vitro. rSADS-CoV demonstrated little, if any, replicative capacity in either immune-competent or immunodeficient mice, indicating a critical need for improved animal models. Efficient growth in primary human lung and intestinal cells implicate SADS-CoV as a potential higher-risk emerging coronavirus pathogen that could negatively impact the global economy and human health.

59 BASIC BIOLOGICAL SCIENCES↗