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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,369 records · Page 76
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Enhancement of critical current density in YBa{sub 2}Cu{sub 3}O{sub 7} films using a semiconductor ion implanter

An up-to-11-fold enhancement was observed in the in-magnetic-field critical current density (J{sub c}) in epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} films on CeO{sub 2}-buffered SrTiO{sub 3} substrates by irradiation with 200- to 750-keV Si and 200-keV B ions. This enhancement indicates that ion beams in the range of 100 to 1000 keV, which are widely used for modifying the conductive properties of semiconducting materials, can significantly improve the vortex-pinning properties in second-generation superconducting wires. Also observed was a scaling relation between J{sub c} and the density of the vacancies (i.e., of Frenkel pairs) produced by the nuclear collisions between incident ions and target atoms, suggesting that this density is a key parameter in determining the magnitude of the J{sub c} enhancement. Also observed was an additional J{sub c} enhancement by a modification of the depth distribution of the vacancies, thus demonstrating the flexibility in controlling artificial pinning center (APC) properties in physical APC introduction.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

The magnetic particle in a box: Analytic and micromagnetic analysis of probe-localized spin wave modes

The dipole field from a probe magnet can be used to localize a discrete spectrum of standing spin wave modes in a continuous ferromagnetic thin film without lithographic modification to the film. Obtaining the resonance field for a localized mode is not trivial due to the effect of the confined and inhomogeneous magnetization precession. We compare the results of micromagnetic and analytic methods to find the resonance field of localized modes in a ferromagnetic thin film, and investigate the accuracy of these methods by comparing with a numerical minimization technique that assumes Bessel function modes with pinned boundary conditions. We find that the micromagnetic technique, while computationally more intensive, reveals that the true magnetization profiles of localized modes are similar to Bessel functions with gradually decaying dynamic magnetization at the mode edges. We also find that an analytic solution, which is simple to implement and computationally much faster than other methods, accurately describes the resonance field of localized modes when exchange fields are negligible, and demonstrating the accessibility of localized mode analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Deformation mechanism study of a hot rolled Zr-2.5Nb alloy by transmission electron microscopy. II. In situ transmission electron microscopy study of deformation mechanism change of a Zr-2.5Nb alloy upon heavy ion irradiation

The effect of heavy-ion irradiation on deformation mechanisms of a Zr-2.5Nb alloy was investigated by using the in situ transmission electron microscopy deformation technique. The gliding behavior of prismatic 〈a〉 dislocations has been dynamically observed before and after irradiation at room temperature and 300 °C. Irradiation induced loops were shown to strongly pin the gliding dislocations. Unpinning occurred while loops were incorporated into or eliminated by 〈a〉 dislocations. In the irradiated sample, loop depleted areas with a boundary parallel to the basal plane trace were found by post-mortem observation after room temperature deformation, supporting the possibility of basal channel formation in bulk neutron irradiated samples. Strong activity of pyramidal slip was also observed at both temperatures, which might be another important mechanism to induce plastic instability in irradiated zirconium alloys. Finally, (011{sup ¯}1)〈01{sup ¯}12〉 twinning was identified in the irradiated sample deformed at 300 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effects of repetitive bending on the magnetoresistance of a flexible spin-valve

A positive magnetostrictive single layer (CoFe) and top-pinned spin-valve structure with positive magnetostrictive free (NiFe) and pinned (CoFe) layers were deposited on flexible polyethylene terephthalate film to investigate the changes in the magnetic properties in flexible environments, especially with a repetitive bending process. It was found that the stress, applied by repetitive bending, changes significantly the magnetic anisotropy of both layers in a single and spin-valve structure depending on the direction of applied stress. The changes in magnetic anisotropy were understood in terms of the inverse magnetostriction effect (the Villari effect) and the elastic recovery force from the flexibility of the polymer substrate. Repetitive bending with tensile stress transverse (or parallel) to the magnetic easy axis was found to enhance (or reduce) the magnetic anisotropy and, consequently, the magnetoresistance ratio of a spin-valve. The observed effects of bending stress in this study should be considered for the practical applications of electro-magnetic devices, especially magneto-striction sensor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

An integrated wire harp and readout electronics inside vacuum

A wire harp is a well known instrument used in ion beam profile measurement and beam diagnostics. Till date, for beam instrumentation, the harp is placed inside the vacuum chamber or beam line in direct exposure to the beam profile to be measured, whereas the related readout electronics is placed outside somewhere at a convenient place. Here, a harp has been developed along with the readout electronics as an integrated part of it and both were placed inside the beam line vacuum (order of 10{sup −7} Torr) to make the system much simpler, easy to operate, and measure small beam current more accurately. The entire signal conversion and processing is done inside the vacuum unlike other systems; hence, the electronics is kept inside. This results in a lesser number (only 4 pin) of electrical connections (feedthrough) including power which otherwise would have required 32 feedthrough pins only for signal readout for a 13 × 13 (X × Y) channel harp. This paper describes a completely new approach to the design of a conventional beam harp widely used for beam instrumentation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Dynamics of energy distribution in three channel alpha helix protein based on Davydov’s ansatz

An important aspect of many biological processes at molecular level is the transfer and storage mechanism of bioenergy released in the reaction of the hydrolysis of Adenosinetriphosphate (ATP) by biomacromolecule especially protein. Model of Soliton Davydov is a new break-through that could describe that mechanism. Here we have reformulated quantum mechanical the Davydov theory, using least action principle. Dynamical aspect of the model is analyzed by numerical calculation. We found two dynamical cases: the traveling and pinning soliton that we suggest they are related to the energy transfer and storage mechanism in the protein. Traveling and pinning soliton can be controlled by strength of coupling. In 3- channel approach, we found the breather phenomena in which its frequency is determined by interchannel coupling parameter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Native defects in Tl{sub 6}SI{sub 4}: Density functional calculations

Tl{sub 6}SI{sub 4} is a promising room-temperature semiconductor radiation detection material. Here, we report density functional calculations of native defects and dielectric properties of Tl{sub 6}SI{sub 4}. Formation energies and defect levels of native point defects and defect complexes are calculated. Donor-acceptor defect complexes are shown to be abundant in Tl{sub 6}SI{sub 4}. High resistivity can be obtained by Fermi level pinning by native donor and acceptor defects. Deep donors that are detrimental to electron transport are identified and methods to mitigate such problem are discussed. Furthermore, we show that mixed ionic-covalent character of Tl{sub 6}SI{sub 4} gives rise to enhanced Born effective charges and large static dielectric constant, which provides effective screening of charged defects and impurities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based magnetic tunneling junctions

For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Bias-free lateral terahertz emitters—A simulation study

The design and performance of bias-free InN-based THz emitters that exploit lateral photocurrents is studied by means of numerical simulations. We use a drift-diffusion model with adjusted carrier temperatures and mobilities. The applicability of this approach is demonstrated by a comparison with results from Monte-Carlo simulations. We consider a simple but robust lateral emitter concept using metal stripes with two different thicknesses with one of them being thin enough to be transparent for THz radiation. This arrangement can be easily multiplexed and the efficiency of this concept has already been demonstrated by experiment for GaAs substrates. In the present study, we consider InN, which is known to be an efficient photo-Dember emitter because of its superior transport properties. Our main focus is on the impact of the emitter design on the emission efficiency assuming different operation principles. Both the lateral photo-Dember (LPD) effect and built-in lateral field effects are considered. The appropriate choice of the metal stripe and window geometry as well as the impact of surface Fermi level pinning are investigated in detail, and design guidelines for efficient large area emitters using multiplexed structures are provided. We find that InN LPD emitters do not suffer from Fermi level pinning at the InN surface. The optimum emission efficiency is found for LPD emitter structures having 200 nm wide illumination windows and mask stripes. Emitter structures in which lateral electric fields are induced by the metal mask contacts can have a considerably higher efficiency than pure LPD emitters. In the best case, the THz emission of such structures is increased by one order of magnitude. Their optimum window size is 1 μm without the necessity of a partially transparent set of mask stripes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Bonding between graphene and MoS{sub 2} monolayers without and with Li intercalation

We performed density functional theory (DFT) calculations for a bi-layered heterostructure combining a graphene layer with a MoS{sub 2} layer with and without intercalated Li atoms. Our calculations demonstrate the importance of the van der Waals (vdW) interaction, which is crucial for forming stable bonding between the layers. Our DFT calculation correctly reproduces the linear dispersion, or Dirac cone, feature at the Fermi energy for the isolated graphene monolayer and the band gap for the MoS{sub 2} monolayer. For the combined graphene/MoS{sub 2} bi-layer, we observe interesting electronic structure and density of states (DOS) characteristics near the Fermi energy, showing both the gap like features of the MoS{sub 2} layer and in-gap states with linear dispersion contributed mostly by the graphene layer. Our calculated total DOS in this vdW heterostructure reveals that the graphene layer significantly contributes to pinning the Fermi energy at the center of the band gap of MoS{sub 2}. We also find that intercalating Li ions in between the layers of the graphene/MoS{sub 2} heterostructure enhances the binding energy through orbital hybridizations between cations (Li adatoms) and anions (graphene and MoS{sub 2} monolayers). Moreover, we calculate the dielectric function of the Li intercalated graphene/MoS{sub 2} heterostructure, the imaginary component of which can be directly compared with experimental measurements of optical conductivity in order to validate our theoretical prediction. We observe sharp features in the imaginary component of the dielectric function, which shows the presence of a Drude peak in the optical conductivity, and therefore metallicity in the lithiated graphene/MoS{sub 2} heterostructure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Stable oscillation in spin torque oscillator excited by a small in-plane magnetic field

Theoretical conditions to excite self-oscillation in a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer are investigated by analytically solving the Landau-Lifshitz-Gilbert equation. The analytical relation between the current and oscillation frequency is derived. It is found that a large amplitude oscillation can be excited by applying a small field pointing to the direction anti-parallel to the magnetization of the pinned layer. The validity of the analytical results is confirmed by comparing with numerical simulation, showing good agreement especially in a low current region.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Polarization fluctuation behavior of lanthanum substituted Bi{sub 4}Ti{sub 3}O{sub 12} thin films

Polarization fluctuation behavior of lanthanum substituted Bi{sub 4}Ti{sub 3}O{sub 12} (Bi{sub 4−x}La{sub x}Ti{sub 3}O{sub 12}, BLT) ferroelectric thin films has been examined. Remnant polarization exhibits an initial increase (P{sub up}, 1–10{sup 6} cycles) and a subsequent decrease (P{sub down}, 10{sup 6}–10{sup 9} cycles) with switching cycles, whereas the dielectric constant exhibits a continuous decrease. By careful investigations on the effect of switching frequency and annealing atmosphere on the polarization fluctuation characteristics, we propose that this polarization fluctuation characteristic of BLT films is attributed to the competition between domain pinning and passive layer growing effect, due to the redistribution of oxygen vacancy related defect under external applied field. P{sub up} behavior is dominated by the unpinning of pinned domain, while P{sub down} behavior is dominated by the reduction of applied field on BLT bulk layer, due to the growing of the passive layer between BLT and Pt electrode. By assuming the dielectric constant and initial thickness of passive layer, the passive layer was estimated to be about 2–5 times thicker than the initial state after 10{sup 9} cycling.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Spin-orbit torques for current parallel and perpendicular to a domain wall

We report field- and current-induced domain wall (DW) depinning experiments in Ta\Co{sub 20}Fe{sub 60}B{sub 20}\MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of the current depends crucially on the internal DW structure, which we manipulate by an external magnetic in-plane field. We show depinning measurements for a current sent parallel to the DW and compare its depinning efficiency with the conventional case of current flowing perpendicularly to the DW. We find that the maximum efficiency is similar for both current directions within the error bars, which is in line with a dominating damping-like spin-orbit torque (SOT) and indicates that no large additional torques arise for currents perpendicular to the DW. Finally, we find a varying dependence of the maximum depinning efficiency angle for different DWs and pinning levels. This emphasizes the importance of our full angular scans compared with previously used measurements for just two field directions (parallel and perpendicular to the DW) to determine the real torque strength and shows the sensitivity of the SOT to the precise DW structure and pinning sites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Multidirectional plasma flow measurement by Gundestrup Probe in scrape-off layer of ADITYA tokamak

Multidirectional plasma flow measurements by using Gundestrup Probe in the scrape-off layer of ADITYA tokamak are presented. The ADITYA Gundestrup Probe-head consists of eight plates arranged around the ceramic rod and three pins normal to side plates. Plates are used to measure both parallel and perpendicular flows simultaneously and pins are used to measure plasma density and floating potential. A comparison of direct perpendicular flow measurement and by two other plates of Gundestrup Probe is presented. Possible causes of perpendicular flows are identified and compared with the measured flows. It is observed that the mechanism of the parallel flow and the perpendicular flow is different only at high parallel Mach number. A puff of the working gas is used to study its effect on the perpendicular flows and its reversal with the gas puff is observed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Irreversible magnetization switching at the onset of superconductivity in a superconductor ferromagnet hybrid

We demonstrate that the magnetic state of a superconducting spin valve, that is normally controlled with an external magnetic field, can also be manipulated by varying the temperature which increases the functionality and flexibility of such structures as switching elements. In this case, switching is driven by changes in the magnetostatic energy due to spontaneous Meissner screening currents forming in the superconductor below the critical temperature. Our scanning Hall probe measurements also reveal vortex-mediated pinning of the ferromagnetic domain structure due to the pinning of quantized stray fields in the adjacent superconductor. The ability to use temperature as well as magnetic field to control the local magnetisation structure raises the prospect of potential applications in magnetic memory devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Improvement in J{sub c} performance below liquid nitrogen temperature for SmBa{sub 2}Cu{sub 3}O{sub y} superconducting films with BaHfO{sub 3} nano-rods controlled by low-temperature growth

For use in high-magnetic-field coil-based applications, the critical current density (J{sub c}) of REBa{sub 2}Cu{sub 3}O{sub y} (REBCO, where RE = rare earth) coated conductors must be isotropically improved, with respect to the direction of the magnetic field; these improvements must be realized at the operating conditions of these applications. In this study, improvement of the J{sub c} for various applied directions of magnetic field was achieved by controlling the morphology of the BaHfO{sub 3} (BHO) nano-rods in a SmBCO film. We fabricated the 3.0 vol. % BHO-doped SmBCO film at a low growth temperature of 720 °C, by using a seed layer technique (T{sub s} = 720 °C film). The low-temperature growth resulted in a morphological change in the BHO nano-rods. In fact, a high number density of (3.1 ± 0.1) × 10{sup 3} μm{sup −2} of small (diameter: 4 ± 1 nm), discontinuous nano-rods that grew in various directions, was obtained. In J{sub c} measurements, the J{sub c} of the T{sub s} = 720 °C film in all directions of the applied magnetic field was higher than that of the non-doped SmBCO film. The J{sub c}{sup min} (6.4 MA/cm{sup 2}) of the former was more than 6 times higher than that (1.0 MA/cm{sup 2}) of the latter at 40 K, under 3 T. The aforementioned results indicated that the discontinuous BHO nano-rods, which occurred with a high number density, exerted a 3D-like flux pinning at the measurement conditions considered. Moreover, at 4.2 K and under 17 T, a flux pinning force density of 1.6 TN/m{sup 3} was realized; this value was comparable to the highest value recorded, to date.

36 MATERIALS SCIENCE↗
DOE OSTI2016

High density plasmas and new diagnostics: An overview (invited)

One of the limiting factors for the full understanding of Electron Cyclotron Resonance Ion Sources (ECRISs) fundamental mechanisms consists of few types of diagnostic tools so far available for such compact machines. Microwave-to-plasma coupling optimisation, new methods of density overboost provided by plasma wave generation, and magnetostatic field tailoring for generating a proper electron energy distribution function, suitable for optimal ion beams formation, require diagnostic tools spanning across the entire electromagnetic spectrum from microwave interferometry to X-ray spectroscopy; these methods are going to be implemented including high resolution and spatially resolved X-ray spectroscopy made by quasi-optical methods (pin-hole cameras). The ion confinement optimisation also requires a complete control of cold electrons displacement, which can be performed by optical emission spectroscopy. Several diagnostic tools have been recently developed at INFN-LNS, including “volume-integrated” X-ray spectroscopy in low energy domain (2-30 keV, by using silicon drift detectors) or high energy regime (>30 keV, by using high purity germanium detectors). For the direct detection of the spatially resolved spectral distribution of X-rays produced by the electronic motion, a “pin-hole camera” has been developed also taking profit from previous experiences in the ECRIS field. The paper will give an overview of INFN-LNS strategy in terms of new microwave-to-plasma coupling schemes and advanced diagnostics supporting the design of new ion sources and for optimizing the performances of the existing ones, with the goal of a microwave-absorption oriented design of future machines.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Sub-band gap photo-enhanced secondary electron emission from high-purity single-crystal chemical-vapor-deposited diamond

Secondary-electron-emission (SEE) current measured from high-purity, single-crystal (100) chemical-vapor-deposited diamond is found to increase when sub-band gap (3.06 eV) photons are incident on the hydrogenated surface. Although the light does not produce photoemission directly, the SEE current increases by more than a factor of 2 before saturating with increasing laser power. In energy distribution curves (EDCs), the emission peak shows a corresponding increase in intensity with increasing laser power. However, the emission-onset energy in the EDCs remains constant, indicating that the bands are pinned at the surface. On the other hand, changes are observed on the high-energy side of the distribution as the laser power increases, with a well-defined shoulder becoming more pronounced. From an analysis of this feature in the EDCs, it is deduced that upward band bending is present in the near-surface region during the SEE measurements and this band bending suppresses the SEE yield. However, sub-band gap photon illumination reduces the band bending and thereby increases the SEE current. Because the bands are pinned at the surface, we conclude that the changes in the band levels occur below the surface in the electron transport region. Sample heating produces similar effects as observed with sub-band gap photon illumination, namely, an increase in SEE current and a reduction in band bending. However, the upward band bending is not fully removed by either increasing laser power or temperature, and a minimum band bending of ∼0.8 eV is established in both cases. The sub-band gap photo-excitation mechanism is under further investigation, although it appears likely at present that defect or gap states play a role in the photo-enhanced SEE process. In the meantime, the study demonstrates the ability of visible light to modify the electronic properties of diamond and enhance the emission capabilities, which may have potential impact for diamond-based vacuum electron sources, particle detectors, and other electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗