Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “N”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,369 records · Page 76

Some n-p (Hg,Cd)Te photodiodes for 8-14 micrometer heterodyne applications

The results describing the dc and CO2 laser heterodyne characteristics of a three element photodiode array and single element and four element photodiode arrays are presented. The measured data shows that the n(+)-p configuration is capable of achieving bandwidths of 475 to 725 MHz and noise equivalent powers of 3.2 x 10 to the minus 20th power W/Hz at 77 K and 1.0 x 10 to the minus 19th power W/Hz at 145 K. The n(+)-n(-)-p photodiodes exhibited wide bandwidths (approximately 2.0 GHz) and fairly good effective heterodyne quantum efficiencies (approximately 13-30 percent at 2.0 GHz). Noise equivalent powers ranging from 1.44 x 10 to the minus 19th power W/Hz to 6.23 x 10 to the minus 20th power W/Hz were measured at 2.0 GHz.

Shanley, J. F.↗

Deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase-epitaxy n-GaAs

The paper presents deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase epitaxy n-GaAs. Nickel diffused into VPE n-GaAs reduces the hole diffusion length L sub p from 4.3 to 1.1 microns. Deep-level transient spectroscopy was used to identify energy levels in Ni-diffused GaAs; the as-grown VPE GaAs contains traces of these levels and an electron trap. Ni diffusion reduces the concentration of this level by an amount that matches the increase in concentration of each of the two Ni-related levels. A technique for measuring minority-carrier capture cross sections was developed, which indicates that L sub p in Ni-diffused VPE n-GaAs is controlled by the E sub c - 0.39 eV defect level.

Partin, D. L.↗

Thermal reaction of ethynylphthalimides and hydration of N-/4-ethynylphenyl/phthalimide

Three ethynyl substituted phenylphthalimides were prepared and characterized by high pressure liquid chromatography, differential scanning calorimetry, and mass spectroscopy. When the preparation of N-(4-ethynylphenyl)phthalimide was attempted by the thermal cyclodehydration of N-(4-ethynylphenyl)-2-carboxybenzamide, N-(4-acetylphenyl)phthalimide was obtained as the major component. This unusual hydration of an ethynyl group was investigated and a mechanism was proposed to explain it.

Hergenrother, P. M.↗

Forward- and reverse-bias tunneling effects in n/+/p silicon solar cells

Excess currents due to field-assisted tunneling in both forward and reverse bias directions have been observed in n(+)-p silicon solar cells. These currents arise from the effect of conducting paths produced in the depletion layer by n(+) diffusion and cell processing. Forward-bias data indicate a small potential barrier with height of 0.04 eV at the n(+) end of conducting paths. Under reverse bias, excess tunneling currents involve a potential barrier at the p end of the conducting paths, the longer paths being associated with smaller barrier heights and dominating at the lower temperatures. Low-reverse-bias data give energy levels of 0.11 eV for lower temperatures (253-293 K) and 0.35 eV for higher temperatures (293-380 K). A model is suggested to explain the results.

Garlick, G. F. J.↗

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Chi, J. Y.↗

Measurement of metastable N/+/1S/ 5755-A emission in the twilight thermosphere

Measurements are reported of the 5755-A emission arising from the transition N(+)(1D-1S) made at Sutherland, South Africa (32.4 deg S, 20.8 deg E). The surface brightness of the emission in mid-November 1977 decayed from approximately 5 R at 10 solar depression angle (SDA) to approximately 1 R at 15 deg SDA. By the use of these data, it has been determined that less than 5% of all N2 ionizations result in the production of N(+) ions in the 1S state. Quenching of N(+)(1S) by neutral constituents and electrons is found to be negligible above 220 km in the twilight thermosphere in November and December 1977. Measurements of the 5755-A emission therefore potentially provide a ground based means of measuring the N2 density in the twilight thermosphere.

Torr, D. G.↗

Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

Von Roos, O.↗

Evaluation of TIROS-N and NOAA-6 satellite data: Comparisons of colocated soundings and analyses for a January case

An early January 1980 synoptic situation was used in evaluating the performance of TIROS-N and NOAA-6 operational temperature soundings. Visual and statistical comparisons of temperature and thickness fields were employed to determine the effects of manual screening of the satellite soundings and measure the accuracy of both the satellite soundings and analyses derived from them. Comparisons between the performance of TIROS-N and NOAA-6 were emphasized. Both satellites were able to correctly position the major troughs and ridges. Gradients were underestimated though, with troughs markedly too warm and ridges slightly too cold. The poorest data occurred near the surface and tropopause as reflected by larger standard deviations in those layers. The performance of TIROS-N was slightly superior to that of NOAA-6.

Schmidt, B. D.↗

A numerical evaluation of TIROS-N and NOAA-6 analyses in a high resolution limited area model

Vertical temperature profiles derived from TIROS-N and NOAA-6 radiance measurements were used to create separate analyses for the period 0000 GMT 6 January to 0000 GMT 7 January 1980. The 0000 GMT 6 January satellite analyses and a conventional analysis were used to initialize and run the University of Wisconsin's version of the Australian Region Primitive Equations model. Forecasts based on conventional analyses were used to evaluate the forecasts based only on satellite upper air data. The forecasts based only on TIROS-N or NOAA-6 data did reasonably well in locating the main trough and ridge positions. The satellite initial analyses and forecasts revealed errors correlated to the synoptic situation. The trough in both TIROS-N and NOAA-6 forecasts which was initially too warm remained too warm as it propagated eastward during the forecast period. Thus, it is unlikely that the operational satellite data will improve forecasts in a data dense region. However, in regions of poor data coverage, the satellite data should have a beneficial effect on numerical forecasts.

Derber, J. C.↗

The ultraviolet spectra of R and N type stars

Low dispersion long wave radiation spectra of three early N-type carbon stars (BL Orionis, TX Piscium and T Indi) obtained with the IUE are discussed. N-star spectra were compared with IUE observations of late M-type stars and several differences were noted. The Mg II and C II chromospheric emission lines reported are the first convincing detection of a 10,000-20,000 K chromosphere in the N stars.

Obrien, G. T.↗

The isotropic composition of cosmic ray B, C, N, and O nuclei

High resolution measurements are presented for the elemental and isotopic composition of galactic cosmic ray B, C, N, and O nuclei with about 30-130 MeV/nucleon. The isotopes are separately resolved, and the resulting abundances are limited by statistical rather than systematic uncertainties. N is found to be significantly depleted in the cosmic ray source with respect to the solar system and local interstellar medium, and it is concluded that the N-14/O-16 limit is inconsistent with models in which a majority of cosmic rays are accelerated interstellar material.

Mewaldt, R. A.↗

Radiative lifetime of the 5S2 metastable state of N/+/

The radiative lifetime of metastable N(+)(5S2) has been measured to be 4.2 + or - 0.6 msec, a value generally in agreement with theory, by direct monitoring of the spontaneous emission from approximately 1,000,000 ions stored in a radio-frequency ion trap. Additional measurements were made of the quenching rate coefficient (2.5 x 10 to the -9th cu cm/sec) and the production cross section (greater than or equal to 10 to the -18th sq cm) of N(+)(5S2) in N2. This work supports the interpretation of the 2145-A feature in the spectrum of aurorae as being due to N(+)(5S2) emission.

Knight, R. D.↗

Theoretical oscillator strengths for 21 spin-forbidden lines of C, N, O, Al, and Si

Detailed calculations are reported of the oscillator strengths of 21 spin-forbidden lines of C II, C III, N I, N II, N III, O I, O II, Al II, and Si III, including 10 lines arising from seven ground levels. All 21 lines lie in the region from 1160 to 2670 A, and the oscillator strengths probably are accurate typically to + or - 50%. These weak lines are particularly important in determining accurate elemental abundances in the interstellar gas.

Cowan, R. D.↗

A theory of the n-i-p silicon solar cell

A computer model has been developed, based on an analytical theory of the high base resistivity BSF n(+)(pi)p(+) or p(+)(nu)n(+) silicon solar cell. The model makes very few assumptions and accounts for nonuniform optical generation, generation and recombination in the junction space charge region, and bandgap narrowing in the heavily doped regions. The paper presents calculated results based on this model and compares them to available experimental data. Also discussed is radiation damage in high base resistivity n(+)(pi)p(+) space solar cells.

Goradia, C.↗

Dynamic Mechanical Properties of N-Phenylnadimide Modified PMR Polyimide Composites

The rheological behavior of newly developd Celion 6000/N-phenylnadimide modified PMR polyimide and PMR-15 composites was investigated. The dynamic mechanical properties were correlated with the structure of N-phenylnadimide modified PMR polyimides. The storage modulus (G'), loss modulus (G''), and loss tangent (tan delta) of four composite systems were measured over a temperature range from -150 to 400 C. Three well defined peaks were seen in the regions of 360, 100, and -120 C, corresponding to the alpha, beta, and gamma relaxations, respectively, of the matrix resins. The activation energies of the alpha, beta, and gamma relaxations were estimated to be 232, 60, and 14 kcal/mole, respectively, for PMR-15. Addition of N-phenylnadimide to the PMR-15 composition lowered the glass transition temperature and the activation energies of PMR-15 polyimide. The dynamic mechanical data appear to be consistent with the formation of a copolymer from N-phenylnadimide and a PMR-15 prepolymer.

Pater, R. H.↗

Effect of reabsorbed recombination radiation on the saturation current of direct gap p-n junctions

The application of the radiative transfer theory for semiconductors to p-n homojunctions subject to low level injection conditions is discussed. By virtue of the interaction of the radiation field with free carriers across the depletion layer, the saturation current density in Shockley's expression for the diode current is reduced at high doping levels. The reduction, due to self-induced photon generation, is noticeable for n-type material owing to the small electron effective mass in direct band-gap III-V compounds. The effect is insignificant in p-type material. At an equilibrium electron concentration of 2 x 10 to the 18th/cu cm in GaAs, a reduction of the saturation current density by 15 percent is predicted. It is concluded that realistic GaAs p-n junctions possess a finite thickness.

Von Roos, O.↗

On Bowen enhancement of the N III spectrum under solar and nebular conditions

Expected enhancement of the N III emission-line spectrum by the Bowen He II to O III to N III resonant photoexcitation process is computed using a six-configuration model. Preliminary comparisons with available solar and nebular observations indicate that the process may play only a small role, although photoexcitation quenching of the N III and O III far-infrared fine-structure lines is noted as a possibly important mechanism. Some features are discussed in connection with the nebular emission at 1750 A, which is suggested as an indicator of excitation class for planetary nebulae.

Kastner, S. O.↗

On the production of N(+) by energetic electrons

Calculations of the ratio of N(+) to total N2 ion production for auroral electrons which give a value of 0.16 compared to the value of 0.22 that has been assumed in a recent publication is presented. The corresponding ratio for photoelectron production is 0.05, which makes photoelectron production of N(+) negligible compared to photodissociative production. The ratio of 3914-A to total ion production is found to be 0.07 for auroral electrons and a similar 0.06 for photoelectrons. The 3371-A ratio to total N2 ion production is 0.09. This calculation also reveals that the secondary electrons in auroras, with energies less than 100 eV, produce only about one third of the total number of ions produced. Only one quarter of the N(+) ions are created by secondary electrons.

Richards, P. G.↗