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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,369 records · Page 76
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium

The redistribution of implanted Rb and Cs profiles in amorphous silicon during solid-phase epitaxial recrystallization has been investigated by Rutherford backscattering spectroscopy and secondary ion mass spectroscopy. For the implantation dose used in these experiments, the alkali atoms segregate at the a-Si/c-Si interface during annealing resulting in concentration peaks near the interface. In this way, the alkali atoms are moved towards the surface. Rutherford backscattering spectroscopy in ion channeling configuration was performed to measure average recrystallization rates of the amorphous silicon layers. Preliminary studies on the influence of the alkali atoms on the solid-phase epitaxial regrowth rate reveal a strong retardation compared to the intrinsic recrystallization rate.

36 MATERIALS SCIENCE↗
NASA NTRS1986

Studies of implanted iron in silicon by channeling and Rutherford backscattering

Different amounts of 100-keV iron ions have been implanted into high-resistivity p-type FZ-silicon samples. The implantation damage, recovery of damage during various annealing periods and temperatures, movement of iron atoms under annealing and oxidation, and the kinds of defects created after implantation, annealing, or oxidation are all investigated by channeling and backscattering measurements. It is found that the critical fluence of 100-keV iron implanted into silicon at room temperature is about 2.5 x 10 to the 14th Fe/sq cm, and that iron atoms are gettered by silicon oxidation. In this supersaturated region, iron atoms diffuse slightly towards bulk silicon during high-temperature annealing (greater than or equal to 1100 C) but not at all during low-temperature annealing (less than or equal to 1000 C) in dry nitrogen ambient.

Wang, P. W.↗
DOE OSTI2019

Effect of helium on dispersoid evolution under self-ion irradiation in a dual-phase 12Cr oxide-dispersion-strengthened alloy

As one candidate alloy for future Generation IV and fusion reactors, a dual-phase 12Cr oxide-dispersion-strengthened (ODS) alloy was developed for high temperature strength and creep resistance and has shown good void swelling resistance under high damage self-ion irradiation at high temperature. However, the effect of helium and its combination with radiation damage on oxide dispersoid stability needs to be investigated. In this study, 120 keV energy helium was preloaded into specimens at doses of 1 × 10 15 and 1 × 10 16 ions/cm 2 at room temperature, and 3.5 MeV Fe self-ions were sequentially implanted to reach 100 peak displacement-per-atom at 475 °C. He implantation alone in the control sample did not affect the dispersoid morphology. After Fe ion irradiation, a dramatic increase in density of coherent oxide dispersoids was observed at low He dose, but no such increase was observed at high He dose. The study suggests that helium bubbles act as sinks for nucleation of coherent oxide dispersoids, but dispersoid growth may become difficult if too many sinks are introduced, suggesting that a critical mass of trapping is required for stable dispersoid growth.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Nb Films: Substrates, Nucleation & Crystal Growth

Over the years, Nb/Cu technology, despite its shortcomings due to the commonly used magnetron sputtering, has positioned itself as an alternative route for the future of superconducting structures used in accelerators. Recently, significant progress has been made in the development of energetic vacuum deposition techniques, showing promise for the production of thin films tailored for SRF applications. The purpose of using energetic condensation is to improve film structure on low temperature substrates by adding energy to the film during condensation to compensate for the lack of thermally induced growth processes. Energetic condensation is characterized by a number of surface and subsurface processes enabled by the energy of the incoming ions such as desorption of adsorbed molecules, enhanced mobility of surface atoms, and implantation of impinging ions under the surface. All these with the nature of the substrate and its crystallographic mismatch with Nb have an important influence on the nucleation and subsequent growth of the Nb film. This paper will show how the structure and defect density thus electron mean free path (represented by residual resistance ration values) of Nb films can be tailored on various substrates, crystalline and amorphous, by varying the ion energy and thermal energy provided to the substrate.

Valente, Anne-Marie↗
DOE OSTI2010

Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface

The use of the process of solid-phase recrystallization reduces to a great extent the number of defects in the silicon layer. An amorphous layer was formed by implantation of silicon ions. The crystalline quality of the SOS structures has been assessed by the method of high-resolution double-crystal X-ray diffraction. Silicon layers with a thickness d = 1000-2500 A and a high crystalline quality have been obtained after implantation of 150-keV silicon ions with subsequent high-temperature annealing.

36 MATERIALS SCIENCE↗
NASA NTRS1992

Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions is studied. Microwave plasma-enhanced chemical-vapor deposition is used for diamond growth. The single-crystal copper substrates were implanted either at room or elevated temperature with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. A simple lattice model is constructed for diamond growth on graphite as 111 line (diamond) parallel to 0001 line (graphite) and 110 line (diamond) parallel to 1 1 -2 0 (graphite).

Ong, T. P.↗
DOE OSTI2016

Electron-beam pulse annealed Ti-implanted GaP

Gallium phosphide heavily doped with substitutional titanium is a prospective material for intermediate band solar cells. To manufacture such a material, single crystals of GaP were implanted with 120 keV Ti ions to doses between 5 × 10{sup 14} cm{sup −2} and 5 × 10{sup 15} cm{sup −2}. They were next pulse annealed with 2 μs electron-beam pulses of electron energy of about 13 keV and pulse energy density between 1 and 2 Jcm{sup −2}. The samples were studied by channeled Rutherford Backscattering, particle induced X-ray emission, and SIMS. The results show full recovery of crystal structure damaged by implantation and good retention of the implanted titanium without, however, its significant substitution at crystal sites.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Superlattice Structure and Precipitates in O+ and Zr+ Ion Coimplanted SrTiO3: a Model Waste Form for 90Sr

We investigate strontium titanate as a model waste form for 90Sr. Implantation with O+ and Zr+ ions, followed by annealing at 1423 K, was performed to simulate 90Sr to 90Zr decays. At low Zr concentrations, we observe formation of a ZrO-Sr superlattice structure. Ab initio calculations indicate that this atomic configuration is energetically favorable. At higher Zr concentrations, we observe precipitates of ZrO2 with a coherently strained interface, or a monolayer of disordered interfacial structure. Potential candidacy of 90SrTiO3 as a waste form for permanent disposal of 90Sr is discussed.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2016

Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si

The depth distributions of structural damage induced in Si at room temperature by the implantation of P and PF{sub 4} with energies from 0.6 to 3.2 keV/amu are experimentally studied in a wide range of doses. It is found that, in all cases, the implantation of molecular PF{sub 4} ions forms practically single-mode defect distributions, with maximum at the target surface. This effect is caused by an increase in the generation of primary defects at the surface of the target. Individual cascades formed by atoms comprising molecule effectively overlap in the surface vicinity; this overlap gives rise to nonlinear processes in combined cascades due to a high density of displacements in such cascades. Quantitative estimation of increase of effectiveness of point defect generation by PF{sub 4} ions in respect to P ions is done on the base of experimental data.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Diffusion-Controlled growth of Ge nanocrystals in SiO{sub 2} films under conditions of ion synthesis at high pressure

The growth of Ge nanocrystals in SiO{sub 2} films is studied in relation to the dose of implanted Ge{sup +} ions and the annealing temperature at a pressure of 12 kbar. It is established that the dependences of the nanocrystal dimensions on the content of Ge atoms and the annealing time are described by the corresponding root functions. The nanocrystal radius squared is an exponential function of the inverse temperature. The dependences correspond to the model of the diffusion-controlled mechanism of nanocrystal growth. From the temperature dependence of the nanocrystal dimensions, the diffusion coefficient of Ge in SiO{sub 2} at a pressure of 12 kbar is determined: D = 1.1 × 10{sup –10} exp(–1.43/kT). An increase in the diffusion coefficient of Ge under pressure is attributed to the change in the activation volume of the formation and migration of point defects. Evidence in favor of the interstitial mechanism of the diffusion of Ge atoms to nanocrystal nuclei in SiO{sub 2} is reported.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Low energy electron emission from surface-interface states of SiO{sub 2}:Ge films

In this paper we present the results of optically stimulated electron emission (OSEE) investigation of thin SiO{sub 2} films implanted with Ge{sup +} ions. The emission models of Urbach rule and power Kane-dependence are used to fit OSEE spectra at different excitation energy ranges. The materials under study may find a number of technological applications in optical devices and ultraviolet sensors. Samples attestation was performed by electron microscopy and x-ray photoelectron spectroscopy (XPS). XPS data revealed strong dependence between the Si, Ge and O atoms state and annealing time. Observed correlations between parameter values of Urbach- and Kane-related models suggest the implantation-induced changeover of both the vibronic subsystem and energy band structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Study of a linear surface wave plasma source for tin removal in an extreme ultraviolet source

Tin deposition mitigation employs hydrogen radicals and ions, formed in a hydrogen plasma, to interact with tin to form tin hydride (SnH 4 ) in the gaseous state, which is then pumped away. Surface wave plasma (SWP) technology developed at Illinois generates hydrogen radicals and ions, resulting in tin etch rates that are high enough to keep extreme ultraviolet (EUV) lithographic tools clean. An advantage of an SWP antenna is the ability to generate a high density of hydrogen radicals and hydrogen ions directly at the desired etching location. In situ etching of tin enables high availability EUV tools by maintaining high reflectivity of the multilayer mirror of the collector. Additionally, the SWP is characterized with low ion energies and low electron temperature, such that the multilayer mirror does not suffer any damage from sputtering or implantation of hydrogen ions during operation. Here, experiments elucidating the fundamental processes of tin removal are conducted by varying pressure, power, surface temperature, and gas flow rate in order to observe the etch rate behavior. Our results have shown that the presence of hydrogen ions increases etch rates because ion bombardment weakens Sn–Sn bonds, which, in turn, allows for a higher rate of chemical etching by the radicals. The ion bombardment reduces the number of radicals needed to etch a single tin atom to the range of 10 2 –10 3 . The linear SWP antenna yields plasma densities on the order of 10 17 to 10 18 m -3 and radical densities on the order of 10 18 to 10 19 m -3 , allowing for greater utilization of ion etch enhancement. Etch rates of up to 200 nm/min have been achieved. The surface temperature of the samples is an important factor in the etching process such that the decrease in the surface temperature increases the etch rates and decreases the hydrogen desorption rates. In addition, a kinetic etch model is developed to explain the behavior of etch rates as a function of surface temperature. Furthermore, results from experiments performed in an Illinois NXE:3100 chamber will be discussed.

42 ENGINEERING↗
DOE OSTI2011

Ion Source of Pure Single Charged Boron Based on Planar Magnetron Discharge in Self-Sputtering Mode

A planar magnetron sputtering device with thermally isolated sintered boron target has been designed and demonstrated. The magnetron is intended to use for generation of boron ion beams, as well as in plasma immersion implantation. For a boron target, high target temperature is required because boron has low electrical conductivity at room temperature, which increases with temperature. The target is well insulated thermally and can be heated by an initial low-current, high-voltage DC discharge mode. A discharge power of 16 W was adequate to reach the required surface temperature, after that a transition of the discharge to a high-current, low-voltage mode is observed. Applying high current pulses over the DC heating discharge results in a self-sputtering operational mode of the magnetron discharge. Ion beam was extracted from the discharge plasma. Beam analysis was performed with a time-of-flight system. All the boron ions are single charged. The maximum boron ion fraction in the beam is greater than 99%, and the mean boron ion fraction, time-integrated over the whole pulse length, is about 95%. This kind of boron ion source could be competitive to conventional boron ion sources that utilize compounds such as BF{sub 3}, and could be useful for semiconductor industry application.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Formation and annihilation of E4 centers in ZnO: Influence of hydrogen

Hydrothermally grown n-type ZnO bulk samples have been implanted with protons and deuterium ions to fluences in the range of 8 × 10{sup 10} to 8 × 10{sup 11 }cm{sup −2}. The implantations were performed at the temperature of 285 K, and the samples were then analyzed in-situ by deep level transient spectroscopy (DLTS) using a setup connected to the implanter beam line. The concentration of the so-called E4 center, having an apparent energy level at ∼0.57 eV below the conduction edge, is found to increase linearly with the ion fluence and the generation rate is proportional to the elastic energy deposition, as expected for a primary defect. Isothermal annealing of the E4 center at temperatures between 290 and 315 K reveals first-order kinetics with the activation energy of ∼0.6 eV. The annealing rate is strongly enhanced with increasing hydrogen fluence, and a model invoking migration of interstitial hydrogen and subsequent reaction with E4 exhibits close agreement with the experimental data. The rate of electron capture by E4 during the DLTS filling pulse depends on temperature, and it displays a thermal barrier of ∼0.15 eV. Most of these experimental results for E4 conform to the theoretically predicted properties of the oxygen vacancy (V{sub O}) and a tentative assignment of E4 to V{sub O} is made, corroborating previous suggestions in the literature. In particular, the 0.57 eV level is ascribed to the double donor state of V{sub O}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

ECR Nb Films Grown on Amorphous and Crystalline Cu Substrates: Influence of Ion Energy

In the pursuit of niobium (Nb) films with similar performance with the commonly used bulk Nb surfaces for Superconducting RF (SRF) applications, significant progress has been made with the development of energetic condensation deposition techniques. Using energetic condensation of ions extracted from plasma generated by Electron Cyclotron Resonance, it has been demonstrated that Nb films with good structural properties and RRR comparable to bulk values can be produced on metallic substrates. The controlled incoming ion energy enables a number of processes such as desorption of adsorbed species, enhanced mobility of surface atoms and sub-implantation of impinging ions, thus producing improved film structures at lower process temperatures. Particular attention is given to the nucleation conditions to create a favourable template for growing the final surface exposed to SRF fields. The influence of the deposition energy on film growth on copper substrates is investigated with the characterization of the film surface, structure, superconducting properties and RF performance.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Thin Films Development For Superconducting RF Applications

Significant progress has recently been made in the development of niobium (Nb) films for Superconducting RF (SRF) applications using energetic condensation of ions extracted from plasma generated by Electron Cyclotron Resonance. Nb films with RRR comparable to bulk values are readily produced on both metallic and insulating substrates. The controlled incoming ion energy enables a number of processes such as desorption of adsorbed species, enhanced mobility of surface atoms and sub-implantation of impinging ions, thus producing improved film structures at lower process temperatures. Particular attention is given to the nucleation conditions to create a favorable template for growing the final surface exposed to SRF fields. The influence of the deposition energy is investigated with the characterization of the film surface, structure, superconducting properties and RF performance. With a similar approach, High Power Impulse Magnetron Sputtering (HiPIMS) is investigated for the development of multilayer SIS (superconductor-insulator-superconductor) structures which have the theoretical prospect to reach RF performance beyond bulk Nb. This paper presents results on the correlation of the surface and material characteristics with the superconducting properties and RF surface impedance for Nb and multilayered NbTiN-based SIS films produced on a variety of substrates.

Zhao, X.↗