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Dynamics of positronium formation in positron-hydrogen collisions embedded in weakly coupled plasmas
Dynamics of positronium (Ps) formation in an arbitrary s-state from an arbitrary s-state of the hydrogen atom in weakly coupled plasma has been investigated within the framework of a distorted-wave theory. The interactions among the charged particles in the plasma have been represented by Debye-Huckel potentials. Using simple variational hydrogenic wave functions and arbitrary order derivatives of the general three-denominator Lewis integral partial-wave scattering amplitudes have been obtained in closed forms. These distorted-wave scattering amplitudes have been used to make a detailed study on differential and total cross sections. It has been found that screening of the interaction potentials has significant effect on the scattering dynamics. Some notable features of cross sections have also been revealed.
Positron scattering from hydrogen atom embedded in weakly coupled plasma
The positron-hydrogen collision problem in weakly coupled plasma environment has been investigated by applying a formulation of the three-body collision problem in the form of coupled multi-channel two-body Lippmann-Schwinger equations. The interactions among the charged particles in the plasma have been represented by Debye-Huckel potentials. A simple variational hydrogenic wave function has been employed to calculate the partial-wave scattering amplitude. Plasma screening effects on various possible mode of fragmentation of the system e{sup +}+H(1s) during the collision, such as 1s{yields}1s and 2s{yields}2s elastic collisions, 1s{yields}2s excitation, positronium formation, elastic proton-positronium collisions, have been reported. Furthermore, a detailed study has been made on differential and total cross sections of the above processes in the energy range 13.6-350 eV of the incident positron.
Photoluminescence spectra of InAs quantum dots embedded in GaAs heterostructure
Self-assembled InAs/GaAs quantum dot (QD) heterostructures grown by solid state molecular beam epitaxy (MBE) were subjected to growth ripening pause of comparatively shorter durations (0-50s) at the growth temperature (520 Degree-Sign C). Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) studies indicate that the QD islands increase in size with the growth pause and correspondingly their density decreases. Photoluminescence (PL) studies were carried out on these QDs. The temperature dependence of the PL is studied and models to explain it are explored.
Control of silicon nanoparticle size embedded in silicon oxynitride dielectric matrix
In this study, silicon rich silicon oxynitride layers containing more than 15% nitrogen were deposited by electron cyclotron resonance assisted plasma enhanced vapor deposition in order to form silicon nanoparticles after a high temperature thermal annealing. The effect of the flows of the precursor gases on the composition and the structural properties of the layers was assessed by Rutherford backscattering spectroscopy, elastic recoil detection analysis, and infrared spectroscopic measurements. The morphological and crystallinity properties were investigated by energy filtered transmission electron microscopy and Raman spectroscopy. We show that the excess of silicon in the silicon oxynitride layer controls the silicon nanoparticles size. On the other hand, the crystalline fraction of particles is found to be strongly correlated to the nanoparticle size. Finally, the photoluminescence measurements show that it is also possible to tune the photoluminescence peak position between 400 and 800 nm and its intensity by changing the silicon excess in the silicon rich silicon oxynitride matrix.
Influence of embedded indium nanocrystals on GaAs thermoelectric properties
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Ultrasonic wave-based structural health monitoring embedded instrument
Piezoelectric sensors and actuators are the bridge between electronic and mechanical systems in structures. This type of sensor is a key element in the integrity monitoring of aeronautic structures, bridges, pressure vessels, wind turbine blades, and gas pipelines. In this paper, an all-in-one system for Structural Health Monitoring (SHM) based on ultrasonic waves is presented, called Phased Array Monitoring for Enhanced Life Assessment. This integrated instrument is able to generate excitation signals that are sent through piezoelectric actuators, acquire the received signals in the piezoelectric sensors, and carry out signal processing to check the health of structures. To accomplish this task, the instrument uses a piezoelectric phased-array transducer that performs the actuation and sensing of the signals. The flexibility and strength of the instrument allow the user to develop and implement a substantial part of the SHM technique using Lamb waves. The entire system is controlled using configuration software and has been validated through functional, electrical loading, mechanical loading, and thermal loading resistance tests.
Tailoring the surface density of silicon nanocrystals embedded in SiO{sub x} single layers
In this article, we explore the possibility of modifying the silicon nanocrystal areal density in SiO{sub x} single layers, while keeping constant their size. For this purpose, a set of SiO{sub x} monolayers with controlled thickness between two thick SiO{sub 2} layers has been fabricated, for four different compositions (x = 1, 1.25, 1.5, or 1.75). The structural properties of the SiO{sub x} single layers have been analyzed by transmission electron microscopy (TEM) in planar view geometry. Energy-filtered TEM images revealed an almost constant Si-cluster size and a slight increase in the cluster areal density as the silicon content increases in the layers, while high resolution TEM images show that the size of the Si crystalline precipitates largely decreases as the SiO{sub x} stoichiometry approaches that of SiO{sub 2}. The crystalline fraction was evaluated by combining the results from both techniques, finding a crystallinity reduction from 75% to 40%, for x = 1 and 1.75, respectively. Complementary photoluminescence measurements corroborate the precipitation of Si-nanocrystals with excellent emission properties for layers with the largest amount of excess silicon. The integrated emission from the nanoaggregates perfectly scales with their crystalline state, with no detectable emission for crystalline fractions below 40%. The combination of the structural and luminescence observations suggests that small Si precipitates are submitted to a higher compressive local stress applied by the SiO{sub 2} matrix that could inhibit the phase separation and, in turn, promotes the creation of nonradiative paths.
GaAs single quantum dot embedded into AlGaAs nanowire
We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 μm in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.
Embedded ultrasound sensor in a silicon-on-insulator photonic platform
A miniaturized ultrasound sensor is demonstrated in a silicon-on-insulator platform. The sensor is based on a π-phase-shifted Bragg grating formed by waveguide corrugation. Ultrasound detection is performed by monitoring shifts in the resonance frequency of the grating using pulse interferometry. The device is characterized by measuring its response to a wideband acoustic point source generated using the optoacoustic effect. Experimental results show that the sensor's response is dominated by the formation of surface acoustic waves.
Monocarbon cationic cluster yields from N{sub 2}/CH{sub 4} mixtures embedded in He nanodroplets and their calculated binding energies
The formation of monocarbon cluster ions has been investigated by electron ionization mass spectrometry of cold helium nanodroplets doped with nitrogen/methane mixtures. Ion yields for two groups of clusters, CH{sub m}N{sub 2}{sup +} or CH{sub m}N{sub 4}{sup +}, were determined for mixtures with different molecular ratios of CH{sub 4}. The possible geometrical structures of these clusters were analyzed using electronic structure computations. Little correlation between the ion yields and the associated binding energies has been observed indicating that in most cases kinetic control is more important than thermodynamic control for forming the clusters.
Microcantilevers with embedded accelerometers for dynamic atomic force microscopy
The measurement of the intermittent interaction between an oscillating nanotip and the sample surface is a key challenge in dynamic Atomic Force Microscopy (AFM). Accelerometers integrated onto AFM cantilevers can directly measure this interaction with minimal cantilever modification but have been difficult to realize. Here, we design and fabricate high frequency bandwidth accelerometers on AFM cantilevers to directly measure the tip acceleration in commercial AFM systems. We demonstrate a simple way of calibrating such accelerometers and present experiments using amplitude modulated AFM on freshly cleaved mica samples in water to study the response of the accelerometer.
Layer-by-layer charging in non-volatile memory devices using embedded sub-2 nm platinum nanoparticles
In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle (PtNP) floating gate devices with defined gate voltage bias ranges. The device consists of two layers of ultra-fine, sub-2 nm PtNPs integrated between Al{sub 2}O{sub 3} tunneling and separation layers. PtNP size and interparticle distance were varied to control the particle self-capacitance and associated Coulomb charging energy. Likewise, the tunneling layer thicknesses were also varied to control electron tunneling to the first and second PtNP layers. The final device configuration with optimal charging behavior and multi-level programming was attained with a 3 nm Al{sub 2}O{sub 3} initial tunneling layer, initial PtNP layer with particle size 0.54 ± 0.12 nm and interparticle distance 4.65 ± 2.09 nm, 3 nm Al{sub 2}O{sub 3} layer to separate the PtNP layers, and second particle layer with 1.11 ± 0.28 nm PtNP size and interparticle distance 2.75 ± 1.05 nm. In this device, the memory window of the first PtNP layer saturated over a programming bias range of 7 V to 14 V, after which the second PtNP layer starts charging, exhibiting a multi-step memory window with layer-by-layer charging.
A low thermal impact annealing process for SiO{sub 2}-embedded Si nanocrystals with optimized interface quality
Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications can be produced by several industrially compatible physical or chemical vapor deposition technologies. A major obstacle for the integration into a fabrication process is the typical annealing to form and crystallize these Si quantum dots (QDs) which involves temperatures ≥1100 °C for 1 h. This standard annealing procedure allows for interface qualities that correspond to more than 95% dangling bond defect free Si NCs. We study the possibilities to use rapid thermal annealing (RTA) and flash lamp annealing to crystallize the Si QDs within seconds or milliseconds at high temperatures. The Si NC interface of such samples exhibits huge dangling bond defect densities which makes them inapplicable for photovoltaics or optoelectronics. However, if the RTA high temperature annealing is combined with a medium temperature inert gas post-annealing and a H{sub 2} passivation, luminescent Si NC fractions of up to 90% can be achieved with a significantly reduced thermal load. A new figure or merit, the relative dopant diffusion length, is introduced as a measure for the impact of a Si NC annealing procedure on doping profiles of device structures.
Titanium embedded cage structure formation in Al{sub n}Ti{sup +} clusters and their interaction with Ar
Recently, Ar physisorption was used as a structural probe for the location of the Ti dopant atom in aluminium cluster cations, Al{sub n}Ti{sup +} [Lang et al., J. Am. Soc. Mass Spectrom. 22, 1508 (2011)]. As an experiment result, the lack of Ar complexes for n > n{sub c} determines the cluster size for which the Ti atom is located inside of an Al cage. To elucidate the decisive factors for the formation of endohedrally Al{sub n}Ti{sup +}, experimentalists proposed detailed computational studies as indispensable. In this work, we investigated, using the density functional theory, the structural and electronic properties of singly titanium doped cationic clusters, Al{sub n}Ti{sup +} (n = 16–21) as well as the adsorption of an Ar atom on them. The first endohedral doped cluster, with Ti encapsulated in a fcc-like cage skeleton, appears at n{sub c} = 21, which is the critical number consistent with the exohedral-endohedral transition experimentally observed. At this critical size the non-crystalline icosahedral growth pattern, related to the pure aluminium clusters, with the Ti atom in the surface, changes into a endohedral fcc-like pattern. The map of structural isomers, relative energy differences, second energy differences, and structural parameters were determined and analyzed. Moreover, we show the critical size depends on the net charge of the cluster, being different for the cationic clusters (n{sub c} = 21) and their neutral counterparts (n{sub c} = 20). For the Al {sub n} Ti {sup +} · Ar complexes, and for n < 21, the preferred Ar adsorption site is on top of the exohedral Ti atom, with adsorption energy in very good agreement with the experimental value. Instead, for n = 21, the Ar adsorption occurs on the top an Al atom with very low absorption energy. For all sizes the geometry of the Al{sub n}Ti{sup +} clusters keeps unaltered in the Ar-cluster complexes. This fact indicates that Ar adsorption does not influence the cluster structure, providing support to the experimental technique used. For n{sub c} = 21, the smallest size of endohedral Ti doped cationic clusters, the Ar binding energy decreases drastically, whereas the Ar-cluster distance increases substantially, point to Ar physisorption, as assumed by the experimentalists. Calculated Ar adsorption energies agree well with available experimental binding energies.
Morphology and properties of a hybrid organic-inorganic system: Al nanoparticles embedded into CuPc thin film
The evolution of the morphology and the electronic structure of the hybrid organic-inorganic system composed of aluminum nanoparticles (NPs) distributed in an organic semiconductor matrix—copper phthalocyanine (CuPc)—as a function of nominal aluminum content was studied by transmission electron microscopy and by photoemission spectroscopy methods. The aluminum atoms deposited onto the CuPc surface diffuse into the organic matrix and self-assemble to NPs in a well-defined manner with a narrow diameter distribution, which depends on the amount of aluminum that is evaporated onto the CuPc film. We find clear evidence of a charge transfer from Al to CuPc and we have been able to determine the lattice sites where Al ions sit. The finally at high coverage about 64 Å the formation of metallic aluminum overlayer on CuPc thin film takes place.
Nonlinear optical response of semiconductor-nanocrystals-embedded photonic band gap structure
Colloidal CdSe/ZnS core/shell nanocrystals (NCs), which were dispersed in SiO{sub 2} sol, were utilized to fabricate a SiO{sub 2}:NCs/TiO{sub 2} all-dielectric photonic band gap (PBG) structure. The third-order nonlinear refractive index (n{sub 2}) of the PBG structure was nearly triple of that of the SiO{sub 2}:NCs film due to the local field enhancement in the PBG structure. The photoinduced change in refractive index (Δn) could shift the PBG band edge, so the PBG structure would show significant transmission modification, whose transmission change was ∼17 folds of that of the SiO{sub 2}:NCs film. Under excitation of a 30 GW/cm{sup 2} femtosecond laser beam, a transmission decrease of 80% was realized.
Conversion of above- and below-bandgap photons via InAs quantum dot media embedded into GaAs solar cell
Quantum dots (QDs) provide photovoltaic conversion of below-bandgap photons due to multistep electron transitions. QDs also increase conversion efficiency of the above-bandgap photons due to extraction of electrons from QDs via Coulomb interaction with hot electrons excited by high-energy photons. Nanoscale potential profile (potential barriers) and nanoscale band engineering (AlGaAs atomically thin barriers) allow for suppression of photoelectron capture to QDs. To study these kinetic effects and to distinguish them from the absorption enhancement due to light scattering on QDs, we investigate long, 3-μm base GaAs devices with various InAs QD media with 20 and 40 QD layers. Quantum efficiency measurements show that, at least at low doping, the multistep processes in QD media are strongly affected by the wetting layer (WL). The QD media with WLs provide substantial conversion of below-bandgap photons and for devices with 40 QD layers the short circuit current reaches 29.2 mA/cm{sup 2}. The QD media with band-engineered AlGaAs barriers and reduced wetting layers (RWL) enhance conversion of high-energy photons and decrease the relaxation (thermal) losses.