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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Doped semiconductor devices for sub-MeV dark matter detection
Dopant atoms in semiconductors can be ionized with ∼ 10 meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark matter absorption on electrons. Currently unconstrained cross sections could be tested with a 1 g-day exposure in a doped detector with backgrounds at the level of existing pure semiconductor detectors, but improvements would be needed to probe the freeze-in target. We discuss the corresponding technological requirements and lay out a possible detector design. Published by the American Physical Society 2024
Nuclear recoil identification in a scientific charge-coupled device
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First Evidence of Local E × B Drift in the Divertor Influencing the Structure and Stability of Confined Plasma near the Edge of Fusion Devices
The structure of the edge plasma in a magnetic confinement system has a strong impact on the overall plasma performance. Here we uncover for the first time a magnetic-field-direction dependent density shelf, i.e., local flattening of density radial profile near the magnetic separatrix, in high confinement plasmas with low edge collisionality in the DIII-D tokamak. The density shelf is correlated with a doubly peaked density profile near the divertor target plate, which tends to occur for operation with the ion BX∇B drift direction away from the X-point, as currently employed for DIII-D advanced tokamak scenarios. This double-peaked divertor plasma profile is connected via the EXB drifts, arising from a strong radial electric field induced by the radial electron temperature gradient near the divertor target. The drifts lead to the reversal of the poloidal flow above the divertor target, resulting in the formation of the density shelf. The edge density shelf can be also enhanced at higher heating power, preventing large, periodic bursts of the plasma, i.e. Edge-localized Modes, in the edge region, consistent with ideal magnetohydrodynamics calculations.
Proton distribution visualization in perovskite nickelate devices utilizing nanofocused x rays
We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO 3 -based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-functional theory simulations show partial reduction of nickel valence in the region with high proton concentration, which leads to the insulating behavior. Concurrently, x-ray diffraction reveals only a small lattice distortion in the doped regions. Together, our results directly show that the knob which proton doping modifies is the electronic valency and not the crystal lattice. Overall, the studies are relevant to ongoing efforts to disentangle structural and electronic effects across metal-insulator phase transitions in correlated oxides.
Superconductivity of Ta-Hf and Ta-Zr alloys: Potential alloys for use in superconducting devices
The electronic properties relevant to superconductivity are reported for bulk Ta-Hf and Ta-Zr body centered cubic alloys, in a large part to determine whether their properties are suitable for potential use in superconducting qbits. The body centered cubic unit cell sizes increase with increasing alloying. Here, the results of magnetic susceptibility, electrical resistivity, and heat capacity characterization are reported. While elemental Ta is a type I superconductor, the alloys are type II strong coupling superconductors. Although decreasing the electron count per atom is expected to increase the density of electronic states at the Fermi level and thus the superconducting transition temperature (T c ) in these systems, we find that this is not sufficient to explain the significant increases in the superconducting T c 's observed.
Zero-bias conductance peak in Dirac semimetal-superconductor devices
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Heterogeneous multipartite entanglement purification for size-constrained quantum devices
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Cooper-pair condensates with nonclassical long-range order on quantum devices
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Quantum Approximate Optimization Algorithm: Performance, Mechanism, and Implementation on Near-Term Devices
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Development of a novel microfluidic device to study metal geochemistry in situ using X-ray fluorescence microprobe spectroscopy
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Multimodal hard X-ray nanoprobe techniques for operando investigations of photovoltaic devices
Compared with conventional laboratory-scale X-ray techniques, synchrotron based X-rays with higher brilliance and higher coherence allow for the investigation of various material properties with high spatial resolution. The microscopic behaviours of materials can be examined using the Hard X-ray Nanoprobe beamline (I14) at Diamond Light Source, which provides a 50 nm focused beam and has been successfully employed to identify nanoscale optoelectronic features in energy-harvesting materials such as halide perovskites that exhibit local heterogeneity. We have developed X-ray beam-induced current (XBIC) measurement capability at I14 to address the growing demand for operando analysis in energy-harvesting research. Here, we demonstrate that X-ray fluorescence (XRF)/XBIC multimodal measurements are feasible at I14 and apply these newly implemented techniques to study perovskite solar cells with various additive concentrations to understand the effect of the additive on nanoscale optoelectronic performance. This expanded operando characterization capability offers the possibility of monitoring nanometre-scale compositional variations and corresponding optoelectronic features of actual solar cell configurations.
Assessing Cyber-Physical Risks of IoT-Based Energy Devices in Grid Operations
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An Interior-Point Solver for AC Optimal Power Flow Considering Variable Impedance-Based FACTS Devices
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Mean Estimation and Nominal Device Selection with the Pairwise Midpoint Method.
Abstract not provided.
Recent Advances in Functional Data Analysis for Electronic Device Data
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