First-principles prediction of the softening of the silicon shock Hugoniot curve
Here, whock compression of silicon (Si) under extremely high pressures (>100 Mbar) was investigated by using two first-principles methods of orbital-free molecular dynamics (OFMD) and path integral Monte Carlo (PIMC). While pressures from the two methods agree very well, PIMC predicts a second compression maximum because of 1s electron ionization that is absent in OFMD calculations since Thomas–Fermi-based theories lack inner shell structure. The Kohn–Sham density functional theory is used to calculate the equation of state (EOS) of warm dense silicon for low-pressure loadings (P < 100 Mbar). Combining these first-principles EOS results, the principal Hugoniot curve of silicon for pressures varying from 0.80 Mbar to above ~10 Gbar was derived. We find that silicon is ~20% or more softer than what was predicted by EOS models based on the chemical picture of matter. Existing experimental data (P ≈ 1–2 Mbar) seem to indicate this softening behavior of Si, which calls for future strong-shock experiments (P > 10 Mbar) to benchmark our results.