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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,351 records · Page 75
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. Likewise, an accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. Furthermore, a small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. As a result, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Fast Neutron Detection using Pixelated CdZnTe Spectrometers

One important important signature of special nuclear materials (SNM) are fast neutrons. Fast neutrons have a low natural background rate and readily penetrate high atomic number materials which easily shield gamma-ray signatures. Thus, fast neutrons provide a complementary signal to gamma rays for detecting shielded SNM. Scattering kinematics dictate that a large nucleus (such as Cd or Te) will recoil with small kinetic energy after an elastic collision with a fast neutron. Charge carrier recombination and quenching further reduce the recorded energy deposited. Thus, the energy threshold of CdZnTe detectors must be very low in order to sense the small signals from these recoils. Here, the threshold was reduced to less than 5 keVee to demonstrate that the 5.9 keV x-ray line from 55 Fe could be separated from electronic noise. Elastic scattering neutron interactions were observed as small energy depositions (less than 20 keVee) using digitally-sampled pulse waveforms from pixelated CdZnTe detectors. Characteristic gamma-ray lines from inelastic neutron scattering were also observed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Optimal Pulse Processing, Pile-Up Decomposition, and Applications of Silicon Drift Detectors at LCLS

Silicon drift detectors (SDDs) revolutionized spectroscopy in fields as diverse as geology and dentistry. For a subset of experiments at ultrafast, X-ray free-electron lasers (FELs), SDDs can make substantial contributions. Often the unknown spectrum is interesting, carrying science data, or the background measurement is useful to identify unexpected signals. Many measurements involve only several discrete photon energies known a priori, allowing single-event decomposition of pile-up and spectroscopic photon counting. We designed a pulse function and demonstrated that the signal amplitude (i.e., proportional to the detected energy and obtained from fitting with the pulse function), rise time, and pulse height are interrelated, and at short peaking times, the pulse height and pulse area are not optimal estimators for detected energy; instead, the signal amplitude and rise time are obtained for each pulse by fitting, thus removing the need for pulse shaping. By avoiding pulse shaping, rise times of tens of nanoseconds resulted in reduced pulse pile-up and allowed decomposition of remaining pulse pile-up at photon separation times down to hundreds of nanoseconds while yielding time-of-arrival information with the precision of 10 ns. Waveform fitting yields simultaneously high energy resolution and high counting rates (two orders of magnitude higher than current digital pulse processors). At pulsed sources or high photon rates, photon pile-up still occurs. We showed that pile-up spectrum fitting is relatively simple and preferable to pile-up spectrum deconvolution. We then developed a photon pile-up statistical model for constant intensity sources, extended it to variable intensity sources (typical for FELs), and used it to fit a complex pileup spectrum. We subsequently developed a Bayesian pile-up decomposition method that allows decomposing pile-up of single events with up to six photons from six monochromatic lines with 99% accuracy. The usefulness of SDDs will continue into the X-ray FEL era of science. Their successors, the ePixS hybrid pixel detectors, already offer hundreds of pixels, each with a similar performance to an SDD, in a compact, robust and affordable package.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

ADC Nonlinearity Correction for the Majorana Demonstrator

Imperfections in analog-to-digital conversion cannot be ignored when signal digitization requirements demand both wide dynamic range and high resolution, as is the case for the MAJORANA DEMONSTRATOR 76 Ge neutrinoless double beta decay search. Enabling the experiment's high-resolution spectral analysis and efficient pulse shape discrimination required careful measurement and correction of ADC nonlinearites. Here, a simple measurement protocol was developed that did not require sophisticated equipment or lengthy data taking campaigns. A slope-dependent hysteresis was observed and characterized. A correction applied to digitized waveforms prior to signal processing reduced the differential and integral nonlinearites by an order of magnitude, eliminating these as dominant contributions to the systematic energy uncertainty at the double-beta decay Q value.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Synthesizing Virtual Oscillators to Control Islanded Inverters

Virtual oscillator control (VOC) is a decentralized control strategy for islanded microgrids where inverters are regulated to emulate the dynamics of weakly nonlinear oscillators. Compared to droop control, which is only well defined in sinusoidal steady state, VOC is a time-domain controller that enables interconnected inverters to stabilize arbitrary initial conditions to a synchronized sinusoidal limit cycle. However, the nonlinear oscillators that are elemental to VOC cannot be designed with conventional linear-control design methods. We address this challenge by applying averaging- and perturbation-based nonlinear analysis methods to extract the sinusoidal steady-state and harmonic behavior of such oscillators. The averaged models reveal conclusive links between real- and reactive-power outputs and the terminal-voltage dynamics. Similarly, the perturbation methods aid in quantifying higher order harmonics. The resultant models are then leveraged to formulate a design procedure for VOC such that the inverter satisfies standard ac performance specifications related to voltage regulation, frequency regulation, dynamic response, and harmonic content. Experimental results for a single-phase 750 VA, 120 V laboratory prototype demonstrate the validity of the design approach. They also demonstrate that droop laws are, in fact, embedded within the equilibria of the nonlinear-oscillator dynamics. This establishes the backward compatibility of VOC in that, while acting on time-domain waveforms, it subsumes droop control in sinusoidal steady state.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2017

Three-Phase Power Converter-Based Real-Time Synchronous Generator Emulation

This paper develops a synchronous generator emulator by using a three-phase voltage source converter for transmission level power system testing. Different interface algorithms are compared, and the voltage type ideal transformer model is selected considering accuracy and stability. At the same time, closed-loop voltage control with current feed-forward is proposed to decrease the emulation error. The emulation is then verified through two different ways. First, the output waveforms of the emulator in experiments are compared with the simulation under the same condition. Second, a transfer function perturbation-based error model is obtained and redefined as the relative error for the amplitude and phase between the emulated and the target system over the frequency range of interest. Finally, the major cause of the error is investigated through a quantitative analysis of the error with varying parameters.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2017

Steady-State and Small-Signal Analysis of A-Source Converter

This paper presents a detailed steady-state analysis and ac small-signal modeling of the power stage of pulse-width modulated A-source converter. The voltage and current waveforms along with their corresponding expressions describing the converter operation are presented in detail. The input-to-output and input-to-capacitor dc voltage transfer functions are determined. The minimum inductance required to ensure continuous conduction mode is derived. The expressions for the semiconductor devices stresses are also presented. The dc, averaged equivalent circuit is derived using the circuit averaging technique. A complete derivation of the small-signal model including the converter parasitic resistances are presented followed by the power stage transfer functions relevant to the capacitor voltage loop, such as: 1) duty cycle-to-capacitor voltage; and 2) input-to-capacitor voltage. In addition, the expressions for the network input impedance and output impedance are derived. Finally, experimental validations of the derived small-signal models are performed, both in frequency and time domain for a laboratory prototype of an A-source converter. The theoretical predictions were in good agreement with the experimental results over a wide range of frequencies.

42 ENGINEERING↗
DOE OSTI2018

Short-Circuit Characterization and Protection of 10-kV SiC mosfet

This paper presents the characterization of the temperature-dependent short-circuit performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting of a phase-leg configuration and a fast speed 10-kV solid state circuit breaker, with temperature control, is introduced in detail. A novel FPGA-based short-circuit protection circuit having a response time of 1.5 μs is proposed and integrated into the gate driver. The short-circuit protection is validated through the platform. The short-circuit characteristics for both the hard switching fault and fault under load (FUL) types at various dc-link voltages (from 500 V to 6 kV) are tested and discussed. The saturation current increases with dc-link voltage and achieves 360 A at 6 kV. Different from low voltage SiC devices, there is no current spike in FUL type of fault. The temperature-dependent short-circuit performance is also presented from 25 to 125 °C. The difference of short-circuit waveforms at various initial junction temperatures can be neglected. Here, a thermal model of the 10-kV SiC mosfet is built for the junction temperature estimation during the short circuit and for analysis of the initial junction temperature impact on the short-circuit performance.

10-kV SiC mosfet↗
DOE OSTI2018

Decentralized Interleaving of Parallel-Connected Buck Converters

We present a decentralized control strategy that yields switch interleaving for parallel-connected dc-dc buck converters. Compared to state-of-the-art methods that are distributed at best, the proposed architecture requires no communication, and hence, presents a variety of advantages with regard to reliability, modularity, and cost. The method is based on the digital implementation of the dynamics of a Lienard-type oscillator circuit as the controller for the converters. Each controller only requires the locally measured output current to synthesize the pulsewidth modulation (PWM) carrier waveform. The intrinsic electrical coupling between converters drives the nonlinear-oscillator-based controllers to converge to an interleaved state with uniform phase spacing across PWM carriers, independent of the number of converters, the load, and initial conditions. We provide analytical guarantees for existence and stability of the interleaved state as well as extensive hardware results for a system of five 120 W 48 V-to-12 V dc-dc buck converters that demonstrate convergence to the interleaved state in the face of a variety of large-signal disturbances.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2018

A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices

This paper presents a unified physics-based insulated-gate bipolar transistor (IGBT) compact model for circuit simulation that predicts the performance of both Si and SiC, n- and p-channel devices. The model can predict the detailed switching waveforms of these technologies based on its charge-based formulation. Further, this compact IGBT model is presented alongside a unique datasheet-driven parameter extraction process. The parameter extraction process enables users to quickly extract model parameters from data typically published without the need of taking physical measurements. The model has been validated with both Si and SiC devices for static and dynamic characteristics. The SiC IGBTs used for validation are a 12.5-kV n-channel device and a 13-kV p-channel device, while the Si IGBT chosen was IXDH30N120 from IXYS Corp. (Milpitas, CA, USA). This is the only IGBT model that predicts the performance of both n- and p-channel, Si and SiC devices, providing more freedom for the development of complex power electronics circuit designs. The convergence of the model has been verified by implementing a complex circuit consisting of both a dc-dc converter and a dc-ac inverter. The results presented here show that the unified model can be used to describe the behavior of a wide range of Si and SiC IGBT circuits. This paper is accompanied by a Verilog-A source code and a power point file demonstrating the model parameter extraction sequence.

42 ENGINEERING↗
DOE OSTI2019

Analysis of Diode Reverse Recovery Effect on ZVS Condition for GaN-Based LLC Resonant Converter

LLC resonant converter can achieve zero voltage switching (ZVS) for primary-side devices and zero current switching (ZCS) for secondary-side rectifiers. However, the reverse recovery and junction capacitance (C j ) of secondary-side diode critically affect the ZVS condition of primary-side switches. The effect of C j has been discussed in literature, but not the reverse recovery. In this paper, the reverse recovery charge (Q rr ) is converted to an equivalent capacitance (C rr_eq ) for the study of primary-side ZVS performance. An accurate model during deadtime is derived and further applied to characterize ZVS performance with different reverse recovery charges in different regions. The concept of establishing parameter C total to consider both C j and C rr_eq is proposed to evaluate the effect of the secondary-side rectifiers. This concept provides the guideline for diode and synchronous rectification MOSFET selection to ensure ZVS condition for LLC converters. To verify the concept and the derived model,a 200/400 V 400 W LLC resonant converter prototype operating from 200 to 700 kHz is built and its ZVS performances with different diodes are compared. Two issues caused by Q rr effect, including V ds reverse charging and asymmetrical waveform during deadtime, are explained thoroughly as well.

42 ENGINEERING↗
DOE OSTI2020

Detection and Diagnosis of Data Integrity Attacks in Solar Farms Based on Multilayer Long Short-Term Memory Network

Photovoltaic (PV) systems are becoming more vulnerable to cyber threats. In response to this emerging concern, developing cyber-secure power electronics converters has received increased attention from the IEEE Power Electronics Society that recently launched a cyber-physical-security initiative. Here this letter proposes a deep sequence learning based diagnosis solution for data integrity attacks on PV systems in smart grids, including dc–dc and dc–ac converters. The multilayer long short-term memory networks are used to leverage time-series electric waveform data from current and voltage sensors in PV systems. The proposed method has been evaluated in a PV smart grid benchmark model with extensive quantitative analysis. As a comparison, we have evaluated classic data-driven methods, including K-nearest neighbor, decision tree, support vector machine, artificial neural network, and convolutional neural network. Comparison results verify performances of the proposed method for detection and diagnosis of various data integrity attacks on PV systems.

42 ENGINEERING↗
DOE OSTI2020

High-Bandwidth Low-Inductance Current Shunt for Wide-Bandgap Devices Dynamic Characterization

High bandwidth sensors are required to measure the wide-bandgap devices' transient behavior because of their fast switching speed. In addition to high bandwidth, the current sensor must introduce little extra parasitic inductance to the switching power loop. The analysis of conventional shunt resistors shows the key to high bandwidth is the coaxial structure and its parasitic inductance is proportional to its transient heat energy rating. Additionally, by combining the structure of coaxial shunt resistor and alumina substrate surface mount thin film resistors, a novel surface mount coaxial shunt resistor is introduced. Experimental measurement verifies its capability of achieving very high bandwidth while introducing very low parasitic inductance. The design can achieve up to 2.23-GHz measurement bandwidth while keeping its parasitic inductance as low as 0.12 nH. Application in gallium nitride heterojunction-field-effect-transistors double pulse test shows it can faithfully capture the transient current waveform while introducing little interference to the switching behavior.

42 ENGINEERING↗
DOE OSTI2022

Multilevel Switched-Capacitor AC–DC Step-Down Rectifier for Wireless Charging With Reduced Conduction Loss and Harmonic Content

In this paper, a wireless charging architecture employing a multilevel switched-capacitor (MSC) AC-DC rectifier is investigated. The proposed MSC rectifier features a multilevel design which is scalable to accommodate different power ratings and load ranges. The topology showcases advantages for wireless power transfer (WPT) systems in terms of compactness, efficiency, impedance tunability, and harmonic attenuation. The single-stage active topology is capable of varying its low-distortion staircase input voltage to tune the wireless power transfer system for high system-wide efficiency. A 7-level, 20 W prototype is used to verify the WPT loading and loss analysis. The prototype operates at 150 kHz with up to 3:1 step-down conversion ratio to an output voltage of 5.0 V. The experimental peak DC-to-DC efficiency is 93.8% and the rectifier peak efficiency is 98.3%. As a result. the rectifier demonstrates low waveform distortion and high efficiency across many WPT loading conditions, solidifying its place as a strong candidate for wireless power applications.

42 ENGINEERING↗
DOE OSTI2022

1 kV, 10-kW SiC-Based Quadruple Active Bridge DCX Stage in a DC to Three-Phase AC Module for Medium-Voltage Grid Integration

Interfacing low voltage dc to medium voltage three-phase ac grid is often based on series-stackable modular converter architectures. To minimize energy storage requirements, it is advantageous to employ a quadruple active bridge (QAB) stage operating as a "dc transformer" in each stackable module. The QAB stage offers three isolated dc link voltages, which then allow for flexible stacking of three single-phase dc-to-ac inverter stages. Each of the module phases processes a pulsating power having a component at twice the line frequency. This presents a challenge in maintaining zero voltage switching (ZVS) on the secondary sides of the QAB during low-power portions of the line cycle. This article is focused on the design of the QAB stage. A detailed analysis of ZVS switching waveforms is presented, including effects of nonlinear device capacitances. It is shown how ZVS can be achieved at all times using a relatively small circulating current provided by the magnetizing inductance of the high-frequency transformer. Analytical expressions are given for the optimal values of the magnetizing inductance and the dead times of the QAB primary and secondary bridges. This approach is verified by experimental results on a 1 kV, 10-kW SiC-based prototype, demonstrating a relatively flat efficiency curve with a peak efficiency of 97.1% at 75% load.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Lightning Current Propagation in Electrical Conduit

Investigation of lightning strikes to conductors ran through long spans of rigid steel conduit was performed. An overdamped-exponential current waveform with controlled peaks and rise rates was used to inject simulated lightning strikes. The impact of the length of wire, length of conduit, grounding location/s, and load type was investigated. Breakdown of 600 V, 12 AWG, THHN insulated wire (3.23 mm OD, 2 mm conductor diameter) was observed for voltages above 45 kV. The presence of resistive loads (between wire and ground) in excess of 20 ohms, or current rise times in excess of 5 kA/μs were found to consistently produce breakdown between wire and conduit. Practical power circuit elements such as outlets and splices were found to breakdown at voltage levels much below the wire insulation failure threshold.

47 OTHER INSTRUMENTATION↗